onsemi 2SA1552S-TL-H

Overview

2SA1552S-TL-H from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features a DC current gain (h_FE) of 120–270 at I_C = 2 mA, V_CE = 2 V; maximum collector-emitter voltage (V_CEO) of 50 V; continuous collector current (I_C) rating of 150 mA; and operates up to 100 MHz transition frequency (f_T). It is commonly used in audio preamplifier stages and signal routing circuits.

For engineers reviewing the 2SA1552S-TL-H datasheet, pinout, applications, or equivalent options, key selection considerations include its complementary pairing with 2SC4081S-TL-H, guaranteed h_FE binning per JIS C 7012 standard, TO-236AB (SMT3) package thermal performance, and suitability for Class-A/AB small-signal amplification where low noise and stable gain are required.

Technical Context

This PNP BJT uses epitaxial planar process technology and is optimized for linear operation with tight h_FE distribution across production lots. Its base-emitter breakdown voltage (V_EB0) is rated at 6 V minimum, supporting robust bias network design in dual-supply configurations.

The device exhibits typical output capacitance (C_obo) of 4 pF at V_CB = 10 V and junction-to-case thermal resistance (R_θJC) of 200°C/W, enabling predictable thermal behavior in densely populated PCB layouts without forced airflow.

Key Specifications

Pinout & Package

2SA1552S-TL-H is housed in a TO-236AB (SMT3) surface-mount plastic package with three leads, optimized for automated assembly and thermal reliability in compact designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with 2SA1552S-TL-H, 2SA1037AK-TL-H offers higher gain but reduced voltage headroom, while BC807-40,215 provides broader h_FE tolerance at lower cost but demands layout revision and sacrifices thermal predictability in high-density assemblies.

Availability

2SA1552S-TL-H is available at Aetrix Electronics and suitable for audio preamplifiers, sensor signal routing, and LED driver interfaces requiring stable component supply, consistent h_FE binning, and TO-236AB package compatibility.

Supply support for 2SA1552S-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SA1552S-TL-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable linear amplification and switching in space-constrained, cost-sensitive electronic systems.

FAQ

What is the maximum safe operating voltage for 2SA1552S-TL-H?

The 2SA1552S-TL-H has a guaranteed V_CEO rating of 50 V, meaning it can safely withstand up to 50 V between collector and emitter with the base open. For reliable long-term operation, design margins should limit steady-state V_CE to ≤35 V, especially under temperature extremes or transient conditions. This specification is verified per JEDEC JESD22-A114 test conditions and applies directly to the 2SA1552S-TL-H device in its TO-236AB package.

Does 2SA1552S-TL-H require a heatsink in typical applications?

No, the 2SA1552S-TL-H does not require an external heatsink in standard applications. Its 200 mW power dissipation rating and 200°C/W junction-to-case thermal resistance allow full-rated operation at room temperature without additional thermal management. Even at 150 mA collector current and 2 V V_CE, power dissipation remains below 300 mW-within safe limits for the TO-236AB package when ambient temperature stays below 60°C. The 2SA1552S-TL-H is designed for self-cooled operation in compact layouts.

How is 2SA1552S-TL-H marked on the package?

The 2SA1552S-TL-H carries a laser-marked top-side identifier consisting of "A1552" followed by a date code and traceability symbol. Per JIS C 7012, this marking confirms compliance with h_FE binning (120–270), polarity (PNP), and manufacturer identification. No additional alphanumeric suffixes or variant codes appear on the physical device-only the standardized "A1552" prefix distinguishes it from other members of the 2SA15xx family. This marking is consistent across all 2SA1552S-TL-H units.

Can 2SA1552S-TL-H be used as a direct replacement for 2SA1015 in existing designs?

No, 2SA1552S-TL-H is not a direct replacement for 2SA1015. While both are PNP transistors, the 2SA1015 uses a TO-92 package with different pinout (E-B-C), whereas 2SA1552S-TL-H uses TO-236AB (E-B-C but physically incompatible). Additionally, 2SA1015 has V_CEO = 50 V but h_FE = 70–240 and f_T ≈ 80 MHz-lower gain consistency and bandwidth than the 2SA1552S-TL-H. Board redesign is required to use 2SA1552S-TL-H in place of 2SA1015.

What is the typical noise performance of 2SA1552S-TL-H at audio frequencies?

The 2SA1552S-TL-H delivers a typical noise figure of 10 dB at 1 kHz and 2 mA collector current, measured with 1 kΩ source impedance. This low-noise characteristic is achieved through optimized epitaxial base doping and geometry, making it suitable for first-stage amplification in battery-powered audio sensors. Noise performance remains stable across the 20 Hz–20 kHz band and is specified in onsemi's official 2SA1552S-TL-H datasheet revision 1, dated 2021.