onsemi 2SA1552T-TL-H

Overview

2SA1552T-TL-H from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features a DC current gain (h_FE) of 120–270 at I_C = 2 mA, V_CE = 2 V; maximum collector-emitter voltage (V_CEO) of 50 V; continuous collector current (I_C) rating of 150 mA; and a power dissipation (P_D) of 200 mW at T_A = 25°C. It is commonly used in audio preamplifier stages and signal conditioning circuits within consumer electronics.

For engineers reviewing the 2SA1552T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include its guaranteed h_FE range at low bias, TO-236AB (SOT-23) package thermal performance, V_CEO margin for 24 V rail systems, and compatibility with complementary NPN devices such as 2SC4081T-TL-H in push-pull configurations.

Technical Context

This PNP BJT operates in active, saturation, and cutoff regions with defined DC current gain linearity across I_C = 0.1–100 mA. Its base-emitter forward voltage (V_BE) is specified at 0.75 V typical at I_C = 10 mA, supporting predictable bias network design. The device exhibits a transition frequency (f_T) of 80 MHz, enabling use in narrowband RF amplifier front-ends up to ~30 MHz.

Thermal resistance from junction-to-ambient (R_θJA) is 625°C/W in standard SOT-23 mounting, limiting sustained power handling without board-level copper thermal relief. The 2SA1552T-TL-H shares the same die and process as the 2SA1551T-TL-H but differs in h_FE binning and V_CEO rating.

Key Specifications

Pinout & Package

2SA1552T-TL-H is housed in a TO-236AB (SOT-23) plastic surface-mount package with gull-wing leads. The package dimensions are 2.9 mm × 1.3 mm × 1.0 mm (L × W × H), with 0.95 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP BJT amplification and switching applications.

Compared with 2SA1552T-TL-H, the 2SA1037AK-TL-H provides extended voltage and frequency capability at the cost of broader h_FE variation, while MMBT2907ALT1G trades AEC-Q101 qualification for higher f_T-making 2SA1552T-TL-H optimal for cost-sensitive, thermally constrained, and automotive-compliant low-to-mid frequency amplification.

Availability

2SA1552T-TL-H is available at Aetrix Electronics and suitable for audio signal conditioning, level-shifting interfaces, and LED driver circuits requiring stable component supply, consistent h_FE binning, and AEC-Q101 qualification for automotive subsystems.

Supply support for 2SA1552T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The 2SA1552T-TL-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliability-critical analog signal paths and robust switching in space-constrained, thermally demanding environments.

FAQ

What is the maximum operating temperature for the 2SA1552T-TL-H?

The 2SA1552T-TL-H has a maximum junction temperature (T_J) of 150°C and a storage temperature range of –55°C to +150°C. Its thermal resistance R_θJA is 625°C/W in standard SOT-23 mounting, so sustained operation above 70°C ambient requires PCB copper thermal relief or reduced bias current to keep T_J < 150°C. Derating curves in the official 2SA1552T-TL-H datasheet define safe power limits versus ambient temperature.

Is the 2SA1552T-TL-H AEC-Q101 qualified?

Yes, the 2SA1552T-TL-H is AEC-Q101 qualified for automotive applications. This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and ESD robustness. The qualification applies specifically to the 2SA1552T-TL-H variant in TO-236AB packaging, as documented in onsemi's official AEC-Q101 report for this part number.

Can the 2SA1552T-TL-H replace the 2SA1037AK-TL-H in existing designs?

The 2SA1552T-TL-H is not a direct replacement for the 2SA1037AK-TL-H due to lower V_CEO (50 V vs. 60 V) and reduced f_T (80 MHz vs. 100 MHz). In circuits operating near 55 V or requiring >50 MHz bandwidth, substituting 2SA1552T-TL-H may cause premature breakdown or gain roll-off. Review voltage margins and signal frequency content before substitution.

What is the typical V_BE of the 2SA1552T-TL-H at I_C = 10 mA?

The typical base-emitter forward voltage (V_BE) of the 2SA1552T-TL-H is 0.75 V at I_C = 10 mA and V_CE = 2 V, with a maximum of 0.95 V under the same conditions. This value is critical for designing accurate bias networks and calculating base resistor values in both switching and linear amplifier configurations using the 2SA1552T-TL-H.

Does the 2SA1552T-TL-H have a built-in base-emitter resistor?

No, the 2SA1552T-TL-H is a standard three-terminal PNP BJT with no internal base-emitter resistor. It requires an external base resistor for current limiting in all operating modes. Devices with integrated resistors (e.g., digital transistors) carry distinct part number suffixes such as "R" or "BRT"; the 2SA1552T-TL-H does not fall into that category.