Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SA1576ART1G

Part No.:
2SA1576ART1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
Aetrix2SA1576ART1G.pdf
Description:
TRANS PNP 50V 0.1A SC70-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,001

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SA1576ART1G from onsemi is a PNP general-purpose amplifier transistor in SC-70 (SOT-323) package, rated for V(BR)CEO = 50 V, IC = 100 mA continuous, hFE = 180–390 at 2 mA/6 V, and PD = 200 mW - used in low-power audio preamplifier stages and signal switching circuits in portable electronics.

For engineers reviewing the 2SA1576ART1G datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed hFE range at low IC, VCE(sat) ≤ 0.5 V at 100 mA/10 mA drive, ESD-safe SC-70 packaging, and Pb-free compliance per J-STD-020 Level 1.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and active switching modes with specified breakdown voltages (V(BR)CBO = 60 V, V(BR)EBO = 7.0 V) and cutoff leakage limits (ICBO ≤ 0.1 µA, ICEO ≤ 0.1 µA at 10 V). Its thermal rating supports operation up to TJ = 150°C with derated power above 25°C ambient.

The device uses epitaxial planar construction with base-emitter junction optimized for stable DC current gain across production lots. It is not designed for RF or high-speed switching; maximum fT is not characterized in the provided documentation and therefore omitted.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)CEO 50 V - Maximum collector-emitter voltage before avalanche breakdown under open-base condition; defines safe operating voltage headroom in amplifier bias networks.
IC (cont.) 100 mA - Continuous collector current limit; sets upper bound for quiescent bias and small-signal output swing capability.
hFE 180–390 - DC current gain at VCE = 6 V, IC = 2 mA; enables predictable base drive sizing for Class-A amplifiers and switch saturation.
VCE(sat) ≤ 0.5 V - Collector-emitter saturation voltage at IC = 100 mA, IB = 10 mA; ensures low conduction loss in saturated-switch applications.
PD 200 mW - Maximum power dissipation at TA = 25°C; determines thermal design margin for PCB copper area and ambient temperature derating.
TJ max 150°C - Absolute maximum junction temperature; constrains thermal interface design and long-term reliability in sealed enclosures.

Pinout & Package

Package: SC-70 (SOT-323), 3-pin surface-mount plastic case, moisture sensitivity level 1, Pb-free compliant (indicated by "G" suffix).

Pin/Terminal Circuit Role Design Meaning
1 Base Control electrode; requires current-limited drive to achieve target IC; polarity-sensitive for PNP operation (reverse-biased relative to emitter).
2 Emitter Current source terminal; connected to higher potential in PNP circuits; serves as reference node for bias network return path.
3 Collector Output current sink terminal; connected to load and supply rail; voltage swing limited by V(BR)CEO and thermal dissipation.

Key Features

Feature Design Value
Pb-free SC-70 package Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL Level 1 - eliminates post-reflow moisture sensitivity concerns and supports lead-free assembly.
Guaranteed hFE range 180–390 at 2 mA/6 V - enables consistent gain matching across production batches without binning or trimming in discrete amplifier designs.
Low VCE(sat) ≤ 0.5 V at 100 mA/10 mA - reduces power loss and self-heating during switching, improving efficiency in battery-powered logic-level translators.
High V(BR)CBO 60 V - provides robustness against transient voltage spikes in automotive body electronics and industrial sensor interfaces.

Applications

Audio Preamp Stage Level-Shifting Switch

Use Scenario: Low-voltage single-supply audio front-end in portable media players and headset amplifiers.

IC Role / Device Role / Timing Role: PNP small-signal amplifier configured in common-emitter topology for voltage gain and impedance transformation.

Use Value: Stable hFE and low noise enable clean gain of weak microphone signals without requiring feedback compensation.

Use Scenario: Converting 3.3 V logic outputs to drive 5 V or 12 V loads in microcontroller-based control modules.

IC Role / Device Role / Timing Role: Saturated PNP switch translating logic-high (low-side grounded) to active-low output referenced to higher rail.

Use Value: VCE(sat) ≤ 0.5 V minimizes voltage drop and heat generation during sustained ON-state operation.

Sensor Signal Conditioning LED Current Sink Driver

Use Scenario: Amplifying millivolt-level outputs from thermistors and bridge sensors in HVAC and industrial monitoring systems.

IC Role / Device Role / Timing Role: Linear-mode PNP amplifier in transimpedance or differential pair configuration for analog signal scaling.

Use Value: Tight V(BR)CEO = 50 V and ICBO ≤ 0.1 µA ensure accuracy and stability over temperature and time.

Use Scenario: Driving indicator LEDs in space-constrained IoT nodes and medical handheld devices.

IC Role / Device Role / Timing Role: Constant-current sink using emitter resistor biasing, leveraging precise hFE for predictable LED brightness control.

Use Value: SC-70 footprint allows integration into dense PCB layouts while maintaining thermal safety at 200 mW dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
2SA1015KT146 Higher V(BR)CEO = 50 V (same), but hFE = 70–400 at 10 mA/6 V; larger SOT-23 package (PD = 250 mW). Broader hFE spread increases gain variation risk in precision bias networks; larger footprint may require layout revision. Select when higher power margin or legacy SOT-23 compatibility is required; verify hFE binning for critical gain stability.
MMBT2907ALT1G Same SC-70 package, but V(BR)CEO = 60 V, hFE = 100–300 at 10 mA/1 V; lower VCE(sat) = 0.4 V typical at 150 mA/15 mA. Higher voltage rating suits wider supply ranges; reduced saturation voltage improves efficiency in high-duty-cycle switching. Prefer for new designs needing extended voltage headroom or lower conduction loss; confirm gain tolerance fits system linearity requirements.

Compared with 2SA1576ART1G, the 2SA1015KT146 offers higher power handling but looser hFE control, while the MMBT2907ALT1G delivers superior voltage margin and saturation performance at the cost of reduced minimum gain - both require validation of bias point stability in the target circuit.

Availability

2SA1576ART1G is available at Aetrix Electronics and suitable for audio preamplifier stages, low-voltage level-shifting switches, and sensor signal conditioning circuits requiring stable component supply, RoHS-compliant packaging, and consistent hFE performance across production volumes.

Supply support for 2SA1576ART1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and consumer markets.

The 2SA1576ART1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable linear amplification and switching in cost-sensitive, space-constrained applications where predictable DC gain and low saturation voltage are essential.

FAQ

What is the maximum operating temperature for the 2SA1576ART1G?

The 2SA1576ART1G has a maximum junction temperature (TJ) of 150°C and a storage temperature range of −55°C to +150°C. Derating of power dissipation begins above 25°C ambient, with linear reduction to zero at 150°C case temperature. Thermal design must account for PCB copper area and airflow to maintain TJ within this limit during continuous operation of the 2SA1576ART1G.

Is the 2SA1576ART1G pin-compatible with other SC-70 PNP transistors?

The 2SA1576ART1G uses Style 7 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches standard SC-70 PNP orientation per onsemi's mechanical drawings. However, pin compatibility does not guarantee electrical equivalence - always verify V(BR)CEO, hFE, and VCE(sat) before substituting other SC-70 PNP parts for the 2SA1576ART1G.

Does the 2SA1576ART1G support lead-free reflow soldering?

Yes, the 2SA1576ART1G is Pb-free and qualified for lead-free reflow per J-STD-020. Its moisture sensitivity level is 1, meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly. The "G" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC standards for the 2SA1576ART1G.

What is the typical DC current gain (hFE) of the 2SA1576ART1G at low collector current?

The 2SA1576ART1G is specified with hFE = 180–390 at VCE = 6.0 V and IC = 2.0 mA. This range reflects production lot variation and ensures predictable base drive requirements in low-current amplifier and bias circuits. Gain decreases at higher IC and lower VCE, so design margins should be based on the minimum value for the 2SA1576ART1G.

Can the 2SA1576ART1G be used in switching applications?

Yes, the 2SA1576ART1G is suitable for low-frequency switching (≤100 kHz) due to its guaranteed VCE(sat) ≤ 0.5 V at IC = 100 mA and IB = 10 mA. It is not characterized for switching speed (tf, tr) or high-frequency operation. For fast switching, consult onsemi's dedicated switching transistor portfolio instead of relying on the 2SA1576ART1G.

2SA1576ART1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 2mA, 6V
Power - Max:
200 mW
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)

2SA1576ART1G FAQ

1.How can I place an order for 2SA1576ART1G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1576ART1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1576ART1G reliable?

The price and inventory of 2SA1576ART1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1576ART1G is usually 5 days.

3.What payment methods are accepted for 2SA1576ART1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1576ART1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1576ART1G?

2SA1576ART1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1576ART1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1576ART1G?

For technical support, including 2SA1576ART1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1576ART1G requirements.

6.How does Aetrix verify that 2SA1576ART1G is sourced from the original manufacturer or authorized distributors?

All 2SA1576ART1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1576ART1G meets industry standards.

7.What is the process for return or replacement of 2SA1576ART1G?

All 2SA1576ART1G units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1576ART1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1576ART1G part is unused and in its original packaging.

Return procedure for 2SA1576ART1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SA1576ART1G Tags

  • 2SA1576ART1G
  • 2SA1576ART1G PDF
  • 2SA1576ART1G Datasheet
  • 2SA1576ART1G Specifications
  • 2SA1576ART1G Images
  • onsemi
  • onsemi 2SA1576ART1G
  • Buy 2SA1576ART1G
  • 2SA1576ART1G Price
  • 2SA1576ART1G Distributor
  • 2SA1576ART1G Supplier
  • 2SA1576ART1G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER