Toshiba Semiconductor and Storage 2SA1588-GR,LF

Overview

2SA1588-GR,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor designed for audio frequency low-power amplification, driver-stage amplification, and switching applications. It features hFE(2) ≥ 25 at V_CE = −6 V, I_C = −400 mA; V_CEO = −30 V; P_C = 200 mW (on FR4); and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the 2SA1588-GR,LF datasheet, 2SA1588-GR,LF pinout, 2SA1588-GR,LF application, or 2SA1588-GR,LF equivalent, key selection criteria include guaranteed hFE linearity at high current, complementary pairing with 2SC4118, SC-70 package thermal derating behavior, and AEC-Q101 qualification status for automotive signal conditioning stages.

Technical Context

This PNP bipolar junction transistor uses Toshiba's PCT (Planar Collector Terminal) process to achieve stable hFE linearity across collector current-critical for low-distortion audio preamplifier and driver-stage operation. Its f_T = 200 MHz supports wideband small-signal amplification up to VHF range, while Cob = 13 pF enables predictable high-frequency response in tuned circuits.

The device operates with V_EB(max) = −5 V and exhibits V_CE(sat) = −0.1 V (typ.) at I_C = −100 mA / I_B = −10 mA, confirming suitability for saturated-switching roles in discrete logic or power control interfaces where low on-state loss is required.

Key Specifications

Pinout & Package

Package: SC-70 (JEITA), also designated 2-2E1A by Toshiba; surface-mount, 3-terminal plastic package weighing 0.006 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with 2SA1588-GR,LF, the 2SA1037AK-TR offers higher hFE at lower current but lacks automotive qualification and current capability, while the MMBT2907ALT1G provides superior voltage headroom and AEC-Q101 compliance in a physically larger SOT-23 package-requiring PCB redesign but enabling more robust transient protection in safety-critical nodes.

Availability

2SA1588-GR,LF is available at Aetrix Electronics and suitable for automotive sensor interfaces, audio preamplifier stages, and discrete logic translator circuits requiring stable component supply across extended production lifecycles.

Supply support for 2SA1588-GR,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade performance.

The 2SA1588-GR,LF belongs to Toshiba's legacy PCT-process PNP transistor family, engineered specifically for low-distortion audio amplification, robust switching, and AEC-Q101-compliant signal conditioning in cost-sensitive automotive and industrial subsystems.

FAQ

What is the maximum collector current rating for the 2SA1588-GR,LF?

The 2SA1588-GR,LF has an absolute maximum collector current (I_C) rating of −500 mA at T_a = 25°C. This rating assumes proper PCB thermal management-specifically mounting on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with three 0.5 mm² copper pads. Derating is required above 25°C ambient, per the P_C–T_a curve in the official Toshiba datasheet for 2SA1588-GR,LF.

Is the 2SA1588-GR,LF AEC-Q101 qualified?

Yes, the 2SA1588-GR,LF is explicitly AEC-Q101 qualified per Toshiba's datasheet revision dated 2021-06-25. This qualification applies to devices with ordering part numbers ending in "LF", as confirmed in Note 1 and Note 2 of the Absolute Maximum Ratings table. The qualification covers temperature cycling, humidity testing, and mechanical stress validation required for automotive under-hood and cabin applications.

What does the "GR" suffix indicate in 2SA1588-GR,LF?

The "GR" suffix in 2SA1588-GR,LF denotes the hFE(1) classification bin: 200–400 at V_CE = −1 V, I_C = −100 mA, and hFE(2) ≥ 75 at V_CE = −6 V, I_C = −400 mA. This high-gain bin ensures tighter gain matching in complementary amplifier pairs and improved linearity in driver-stage applications compared to "O" (70–140) or "Y" (120–240) variants.

Which NPN transistor is complementary to the 2SA1588-GR,LF?

The 2SC4118 is the manufacturer-specified complementary NPN transistor for the 2SA1588-GR,LF. Toshiba documents this pairing explicitly in the "Complementary to 2SC4118" note on page 1 of the 2SA1588-GR,LF datasheet. Both devices share matched hFE characteristics, thermal coefficients, and SC-70 packaging-enabling symmetrical push-pull amplifier designs without external gain trimming.

What is the transition frequency (f_T) of the 2SA1588-GR,LF?

The transition frequency f_T of the 2SA1588-GR,LF is 200 MHz (typical), measured at V_CE = −6 V and I_C = −20 mA. This value reflects the frequency at which current gain drops to unity and confirms suitability for VHF-range small-signal amplification, such as IF stages in AM/FM receivers or broadband sensor signal conditioning circuits using the 2SA1588-GR,LF.