onsemi 2SA1593T-TL-E

Overview

2SA1593T-TL-E from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −2 A I_C, and 15 W P_C at T_c = 25°C, featuring low V_CE(sat) of −0.22 V (typ) at I_C = −1 A / I_B = −100 mA, 120 MHz f_T, and housed in TP-FA (SC-63/TO-252) surface-mount package. It serves as a high-voltage switching element in relay drivers and DC power supply output stages.

For engineers reviewing the 2SA1593T-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed −100 V breakdown rating, validated 120 MHz gain-bandwidth product, and TP-FA package thermal performance under pulsed load conditions.

Technical Context

This device uses FBET and MBIT processes to achieve high breakdown voltage and fast switching-ton = 80 ns, tf = 40 ns-with low saturation voltage optimized for linear and switching operation in high-current, medium-voltage circuits. Its dual-collector TP-FA layout supports robust thermal dissipation without heatsink up to 1 W at T_a = 25°C.

The 2SA1593T-TL-E is rank-coded for h_FE = 200–400 at V_CE = −5 V / I_C = −100 mA, with guaranteed V_(BR)CEO ≥ −100 V and V_(BR)CBO ≥ −120 V. Output capacitance Cob = 16 pF at V_CB = −10 V enables stable high-frequency switching in flyback and PWM control stages.

Key Specifications

Pinout & Package

2SA1593T-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63), a surface-mount, 4-terminal, dual-collector power plastic package with exposed thermal pad. Dimensions: 7.0 × 5.0 × 2.3 mm (L × W × H), mass = 0.282 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with MJD2955RLG and 2SA1774E, the 2SA1593T-TL-E uniquely balances −100 V rating, −2 A current, 120 MHz f_T, and low −0.22 V V_CE(sat) in a thermally optimized TP-FA package-making it optimal for space-constrained, high-efficiency 20–30 W switching stages where both voltage headroom and speed matter.

Availability

2SA1593T-TL-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and offline AC/DC auxiliary power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 2SA1593T-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SA1593T-TL-E belongs to onsemi's high-voltage bipolar transistor family designed specifically for compact, high-reliability switching in power conversion and electromechanical control systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2SA1593T-TL-E?

The 2SA1593T-TL-E has a guaranteed minimum V_(BR)CEO of −100 V at I_C = −1 mA with open-base condition. This rating is validated per onsemi datasheet No.2511, making the 2SA1593T-TL-E suitable for circuits with DC bus voltages up to 85 V RMS in offline power applications. Exceeding −100 V risks avalanche breakdown and permanent device damage.

Does the 2SA1593T-TL-E have a dual-collector configuration, and how does it affect PCB layout?

Yes, the 2SA1593T-TL-E features two collector terminals (Pins 2 and 4) in its TP-FA package. This dual-collector structure lowers effective on-resistance and improves thermal coupling to the PCB copper area. For optimal performance, both collector pads must be routed to the same net-typically the high-side power rail-and connected to a shared thermal pad with ≥2 cm² of 2-oz copper.

What is the h_FE range for the 2SA1593T-TL-E, and how is it binned?

The 2SA1593T-TL-E is rank-coded as "T", specifying a DC current gain (h_FE) range of 200 to 400 measured at V_CE = −5 V and I_C = −100 mA. This binning ensures predictable base drive requirements across production lots and simplifies bias network design for linear or saturated switching operation in the 2SA1593T-TL-E.

Can the 2SA1593T-TL-E replace the 2SA1593S-TL-E in an existing design?

Yes-the 2SA1593T-TL-E is a direct functional replacement for the 2SA1593S-TL-E, differing only in h_FE binning (T = 200–400 vs. S = 140–280). Both share identical absolute maximum ratings, pinout, package, and thermal characteristics. No PCB or schematic changes are required when upgrading from S to T rank for improved current gain consistency in the 2SA1593T-TL-E.

What is the thermal resistance (R_θJA) of the 2SA1593T-TL-E in standard JEDEC PCB mounting?

The 2SA1593T-TL-E does not specify R_θJA in its datasheet, but its TP-FA package delivers 15 W power dissipation at T_c = 25°C. When mounted on a 1 in² (6.45 cm²) 2-oz copper pad with 2 thermal vias, typical R_θJA is ~65°C/W. For reliable operation, keep junction temperature below 150°C using the 2SA1593T-TL-E's specified T_j limit and derated power curves.