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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA1707T-AN

Name: 2SA1707T-AN
Brand: onsemi
SKU: 2SA1707T-AN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1707T-AN

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-71

Datasheet:: 2SA1707T-AN.pdf

Description:: TRANS PNP 50V 3A 3-NMP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA1707T-AN from onsemi is a PNP bipolar junction transistor designed for medium-power switching and linear amplification in industrial control, power supply regulation, and motor drive circuits. It delivers −50 V V_CEO, −3 A continuous collector current, 1 W power dissipation, low −0.35 V typical V_CE(sat) at −2 A/−100 mA, and 150 MHz f_T, enabling fast, efficient switching in compact designs.

For engineers reviewing the 2SA1707T-AN datasheet, pinout, applications, or equivalent options, key selection criteria include its SC-71 (NMP) package, −50 V breakdown rating, h_FE rank T (200–400 at −100 mA), low saturation voltage, and verified switching times (t_on = 70 ns, t_f = 35 ns).

Technical Context

The 2SA1707T-AN employs FBET and MBIT fabrication processes to achieve wide safe operating area (ASO), high current gain consistency, and robust thermal performance up to 150 °C junction temperature. Its PNP polarity and −50 V V_CEO rating support use in complementary push-pull stages and high-side switch configurations.

Electrical behavior is characterized by two h_FE bins (S: 140–280; T: 200–400), specified at both −100 mA and −3 A test conditions, with guaranteed −0.7 V max V_CE(sat) at −2 A/−100 mA and −1.2 V max V_BE(sat). Cob is rated at 25 pF typical at −10 V V_CB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in high-side switching
I_C	−3 A - Continuous DC collector current capacity; supports medium-power load switching without forced cooling
V_CE(sat)	−0.35 V (typ) at −2 A/−100 mA - Low saturation voltage reduces conduction loss and heat generation in saturated-switch applications
h_FE	200–400 (Rank T) at −2 V V_CE, −100 mA I_C - Tight DC current gain bin ensures predictable base drive requirements
f_T	150 MHz - Gain-bandwidth product enables reliable operation in audio-frequency and fast-switching SMPS control loops
t_on/t_f	70 ns / 35 ns - Verified turn-on and fall times support ≥5 MHz switching in hard-switched topologies
P_C	1 W at T_a = 25 °C - Power dissipation limit determines heatsinking needs in continuous conduction mode

Pinout & Package

2SA1707T-AN is housed in the SC-71 (JEITA/JEDEC) package, branded NMP(Taping) by onsemi, with dimensions 2.54 mm × 1.45 mm × 1.05 mm (L×W×H) and mass 0.275 g. It uses surface-mount taping for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit terminal for PNP device; connects to higher potential node in high-side switch configuration
2	Collector	Current entry terminal; ties to load or supply rail depending on circuit topology
3	Base	Control input; requires negative bias relative to emitter to forward-bias BE junction and enable conduction

Key Features

Feature	Design Value
Low V_CE(sat)	−0.35 V typical at −2 A ensures <1.4 W conduction loss per device in saturated switching
Wide ASO	Rated for 1 W at 25 °C ambient with derating to zero at 150 °C, supporting robust operation under transient overloads
Fast switching	70 ns t_on and 35 ns t_f enable high-frequency PWM control in DC-DC converters and inverters
High h_FE consistency	Rank T bin (200–400) minimizes base drive variation across production lots in linear amplifier stages
FBET/MBIT process	Enables tight parameter distribution, low leakage (ICBO ≤ −1 μA), and stable performance across −55 to +150 °C

Applications

Industrial Motor Control	Switch-Mode Power Supply
Use Scenario: Driving gate of N-channel MOSFETs in half-bridge gate driver ICs or discrete level-shift circuits. IC Role / Device Role / Timing Role: PNP high-side level shifter providing fast, low-loss pull-up during dead-time intervals. Use Value: −0.35 V V_CE(sat) and 35 ns t_f minimize shoot-through risk and reduce gate drive losses.	Use Scenario: Error amplifier output stage in isolated flyback or forward converter feedback loops. IC Role / Device Role / Timing Role: Linear current source/sink delivering precise compensation current to optocoupler LED. Use Value: 200–400 h_FE bin and low ICBO (<−1 μA) ensure stable loop gain and minimal temperature drift.
DC-DC Converter Protection	Automotive Lighting Control
Use Scenario: Overcurrent sensing and latch-off circuit in 12 V automotive DC-DC modules. IC Role / Device Role / Timing Role: Fast-saturating PNP switch triggering shutdown when sensed current exceeds threshold. Use Value: 150 MHz f_T and 70 ns t_on allow sub-microsecond response to fault events.	Use Scenario: High-side switch for LED headlamp dimming in body control modules. IC Role / Device Role / Timing Role: Medium-current PNP driver controlling LED string current via PWM-modulated base drive. Use Value: −50 V V_CEO withstands load-dump transients; 1 W P_C supports 350 mA continuous LED current at 85 °C ambient.

Industrial Motor Control

Switch-Mode Power Supply

Use Scenario: Driving gate of N-channel MOSFETs in half-bridge gate driver ICs or discrete level-shift circuits.

IC Role / Device Role / Timing Role: PNP high-side level shifter providing fast, low-loss pull-up during dead-time intervals.

Use Value: −0.35 V V_CE(sat) and 35 ns t_f minimize shoot-through risk and reduce gate drive losses.

Use Scenario: Error amplifier output stage in isolated flyback or forward converter feedback loops.

IC Role / Device Role / Timing Role: Linear current source/sink delivering precise compensation current to optocoupler LED.

Use Value: 200–400 h_FE bin and low ICBO (<−1 μA) ensure stable loop gain and minimal temperature drift.

DC-DC Converter Protection

Automotive Lighting Control

Use Scenario: Overcurrent sensing and latch-off circuit in 12 V automotive DC-DC modules.

IC Role / Device Role / Timing Role: Fast-saturating PNP switch triggering shutdown when sensed current exceeds threshold.

Use Value: 150 MHz f_T and 70 ns t_on allow sub-microsecond response to fault events.

Use Scenario: High-side switch for LED headlamp dimming in body control modules.

IC Role / Device Role / Timing Role: Medium-current PNP driver controlling LED string current via PWM-modulated base drive.

Use Value: −50 V V_CEO withstands load-dump transients; 1 W P_C supports 350 mA continuous LED current at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1707S-AN	Same package and absolute ratings, but h_FE bin S (140–280) vs. T (200–400); lower min gain at −100 mA	Suitable where base drive margin is ample and tighter gain control not required	Select 2SA1707S-AN only if design tolerates wider h_FE variation and lower minimum gain
MJD2955G	TO-252 package, −60 V V_CEO, −10 A I_C, higher P_C (1.5 W), but slower t_f (100 ns) and no h_FE binning	Better for higher-current, lower-frequency applications requiring ruggedness over speed	Choose MJD2955G when board space allows DPAK and higher current/voltage margins outweigh speed needs

Compared with 2SA1707S-AN, the 2SA1707T-AN offers higher guaranteed h_FE for more predictable base drive; versus MJD2955G, it trades current/voltage headroom for faster switching and smaller SC-71 footprint-ideal for space-constrained, high-frequency designs.

Availability

2SA1707T-AN is available at Aetrix Electronics and suitable for industrial motor control, switch-mode power supply feedback, and automotive lighting applications requiring stable component supply, consistent h_FE binning, and reliable SC-71 surface-mount packaging.

Supply support for 2SA1707T-AN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and connectivity solutions.

The 2SA1707T-AN belongs to onsemi's general-purpose bipolar transistor family engineered for industrial-grade reliability, fast switching, and low-saturation performance in power conversion and control systems.

FAQ

What is the h_FE range for 2SA1707T-AN and how is it binned?

The 2SA1707T-AN is binned to Rank T, guaranteeing DC current gain (h_FE) between 200 and 400 when measured at V_CE = −2 V and I_C = −100 mA. This tighter bin than Rank S (140–280) ensures more consistent base drive requirements across production units, directly improving repeatability in amplifier and switching designs using the 2SA1707T-AN.

Is 2SA1707T-AN RoHS compliant and lead-free?

Yes, the 2SA1707T-AN is Pb-free and RoHS compliant, as confirmed in the official onsemi datasheet (Ordering Information section), which lists "Pb Free" for this part number. The device meets EU Directive 2011/65/EU and associated exemptions, making it suitable for environmentally regulated industrial and automotive applications requiring the 2SA1707T-AN.

What is the maximum junction temperature and thermal resistance of 2SA1707T-AN?

The 2SA1707T-AN has a maximum junction temperature (T_j) of 150 °C and a thermal resistance from junction-to-ambient (R_θJA) of 150 °C/W (typical, unmounted). When mounted on a standard FR-4 PCB with 1 cm² copper pad, R_θJA improves significantly; full derating curves are provided in Figure No.3093-6/8 of the 2SA1707T-AN datasheet.

Can 2SA1707T-AN be used in parallel configurations?

Parallel operation of 2SA1707T-AN devices is not recommended due to lack of built-in emitter ballasting and potential current imbalance caused by h_FE and V_BE(sat) mismatches-even within the same Rank T bin. For higher current needs, select a single higher-rated device like MJD2955G rather than paralleling multiple 2SA1707T-AN units.

What are the storage and handling requirements for 2SA1707T-AN?

The 2SA1707T-AN has a storage temperature range of −55 °C to +150 °C and is supplied in moisture-sensitive level 1 (MSL-1) tape-and-reel packaging per J-STD-020. No dry pack or baking is required prior to soldering; standard reflow profiles compatible with Pb-free assembly may be used without special precautions for the 2SA1707T-AN.

2SA1707T-AN Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-71

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-NMP

2SA1707T-AN FAQ

1.How can I place an order for 2SA1707T-AN through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1707T-AN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1707T-AN reliable?

The price and inventory of 2SA1707T-AN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1707T-AN is usually 5 days.

3.What payment methods are accepted for 2SA1707T-AN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1707T-AN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1707T-AN?

2SA1707T-AN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1707T-AN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1707T-AN?

For technical support, including 2SA1707T-AN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1707T-AN requirements.

6.How does Aetrix verify that 2SA1707T-AN is sourced from the original manufacturer or authorized distributors?

All 2SA1707T-AN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1707T-AN meets industry standards.

7.What is the process for return or replacement of 2SA1707T-AN?

All 2SA1707T-AN units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1707T-AN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1707T-AN part is unused and in its original packaging.

Return procedure for 2SA1707T-AN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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