onsemi 2SA1709T-EPN-AN

Overview

2SA1709T-EPN-AN from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −2 A I_C, and 1 W P_C, featuring low V_CE(sat) of −0.22 V (typ) at −1 A/−100 mA drive, 120 MHz f_T, and SC-71 (NMP) surface-mount package. It serves as a high-voltage switching element in DC-DC converter output stages and industrial motor control drivers.

For engineers reviewing the 2SA1709T-EPN-AN datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CEO = −100 V, h_FE rank T (200–400), t_on/t_f = 80 ns/40 ns, and SC-71 thermal resistance (R_θJA ≈ 150 °C/W).

Technical Context

This PNP transistor employs FBET and MBIT fabrication processes to achieve high breakdown voltage and fast switching. Its design supports linear amplification and saturated switching modes with guaranteed V_(BR)CEO = −100 V and V_CE(sat) ≤ −0.6 V at I_C = −1 A, I_B = −100 mA.

The device operates within −55 °C to +150 °C storage range and 150 °C max junction temperature. Electrical characteristics are specified at T_a = 25 °C, with h_FE binned per rank (T: 200–400) and f_T measured at V_CE = −10 V, I_C = −100 mA.

Key Specifications

Pinout & Package

Package: SC-71 (JEITA/IEC designation), also known as NMP (onsemi internal code), 3-pin surface-mount plastic package with gull-wing leads. Dimensions: 2.54 mm × 1.45 mm × 0.9 mm (L×W×H), mass 0.275 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Compared with 2SA1709T-EPN-AN, the 2SA1709T-AN offers identical performance with simplified logistics, while MJD2955G trades switching speed for higher power dissipation capability-making the former ideal for precision-timed industrial drives and the latter better suited for ruggedized automotive power stages.

Availability

2SA1709T-EPN-AN is available at Aetrix Electronics and suitable for industrial motor control, telecom power conversion, and automotive body electronics requiring stable component supply, full traceability, and extended lifecycle support.

Supply support for 2SA1709T-EPN-AN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient silicon solutions for automotive, industrial, cloud, and IoT applications.

The 2SA1709 series belongs to onsemi's high-voltage bipolar transistor product line, engineered for robust switching in harsh environments including telecom infrastructure, factory automation, and vehicle subsystems.

FAQ

What is the maximum operating junction temperature for the 2SA1709T-EPN-AN?

The 2SA1709T-EPN-AN has a maximum junction temperature (T_j) rating of 150 °C, as specified in its Absolute Maximum Ratings table. This limit must not be exceeded during operation-even transiently-to avoid permanent degradation. Derating curves in the datasheet show allowable collector dissipation versus ambient temperature, and PCB layout must provide adequate copper area to maintain T_j ≤ 150 °C under worst-case load conditions. The 2SA1709T-EPN-AN achieves this via its SC-71 package's thermal characteristics and FBET process thermal stability.

Does the 2SA1709T-EPN-AN have a defined h_FE range, and how is it binned?

Yes, the 2SA1709T-EPN-AN is binned by DC current gain (h_FE) into two ranks: S (140–280) and T (200–400), both tested at V_CE = −5 V and I_C = −100 mA. The "T" suffix in 2SA1709T-EPN-AN explicitly denotes the higher-gain T-rank variant. This binning ensures predictable base drive requirements across production lots-critical for fixed-resistor bias networks in motor driver and power supply applications. The 2SA1709T-EPN-AN's guaranteed minimum h_FE of 200 simplifies design margining for saturation.

What is the meaning of the "EPN" suffix in 2SA1709T-EPN-AN?

The "EPN" suffix in 2SA1709T-EPN-AN indicates an enhanced traceability version: "E" denotes engineering-grade qualification, "P" signifies Pb-free compliance per J-STD-609, and "N" confirms full NiPdAu lead finish. This variant provides full lot-level traceability, extended reliability testing data, and tighter process controls versus the standard 2SA1709T-AN. The 2SA1709T-EPN-AN is intended for mission-critical industrial and telecom deployments where long-term supply assurance and failure analysis support are mandatory.

Can the 2SA1709T-EPN-AN replace the 2SA1709S-AN in existing designs?

No-the 2SA1709T-EPN-AN and 2SA1709S-AN differ in h_FE binning: T-rank (200–400) vs. S-rank (140–280). Substituting the higher-gain 2SA1709T-EPN-AN for the lower-gain 2SA1709S-AN may cause excessive base current draw or unintended saturation in fixed-bias circuits. While electrically compatible in pinout and absolute ratings, the 2SA1709T-EPN-AN requires verification of base resistor values and thermal margins before drop-in use. Always consult the 2SA1709T-EPN-AN's specific h_FE curve and test conditions.

What is the typical Cob (output capacitance) of the 2SA1709T-EPN-AN, and why does it matter?

The 2SA1709T-EPN-AN has a typical output capacitance (C_ob) of 16 pF at V_CB = −10 V and f = 1 MHz. This parameter directly impacts switching efficiency and EMI generation: lower C_ob reduces turn-off energy loss and dv/dt-induced gate ringing in driving circuits. At 16 pF, the 2SA1709T-EPN-AN enables clean transitions in 100–500 kHz power stages-critical for maintaining low noise in telecom and industrial power supplies. The 2SA1709T-EPN-AN's Cob remains stable across temperature, supporting consistent timing in wide-range ambient applications.