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Toshiba Semiconductor and Storage 2SA1721OTE85LF
- Part No.:
- 2SA1721OTE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
2SA1721OTE85LF.pdf
- Description:
- TRANS PNP 300V 0.1A S-MINI
- Quantity:
- Payment:
- Shipping:
Inventory:2,288
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Product details
Overview
2SA1721OTE85LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor (PCT process) designed for high-voltage switching and control functions. It delivers VCBO = −300 V, VCEO = −300 V, IC = −100 mA, VCE(sat) = −0.5 V (max), and fT = 55 MHz (typ.), enabling use in plasma display drivers and CRT brightness control circuits.
For engineers reviewing the 2SA1721OTE85LF datasheet, 2SA1721OTE85LF pinout, 2SA1721OTE85LF application, or 2SA1721OTE85LF equivalent, key selection criteria include verified high-voltage PNP capability, low saturation voltage under −20 mA load, complementary pairing with 2SC4497, TO-236MOD (SC-59) package compatibility, and junction temperature rating up to 150°C.
Technical Context
This PNP bipolar junction transistor employs Toshiba's PCT (Planar Collector Technology) process to achieve stable high-voltage blocking and fast switching performance. Its −300 V VCBO/VCEO ratings and 5.5 pF Cob (typ.) support efficient operation in high-impedance, high-voltage gain stages and active load configurations.
The device exhibits hFE = 30–150 at VCE = −10 V/IC = −20 mA and transitions at fT = 55 MHz (typ.), confirming suitability for medium-frequency switching and analog amplification where low VCE(sat) and controlled output capacitance are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO / VCEO | −300 V - Enables direct interface with 200–280 V DC rails in plasma/Nixie tube anode drivers without external level-shifting. |
| VCE(sat) | −0.5 V (max) at IC = −20 mA/IB = −2 mA - Minimizes conduction loss and self-heating in sustained on-state switching applications. |
| fT | 55 MHz (typ.) - Supports stable small-signal amplification and switching up to ~30 MHz with predictable gain roll-off. |
| Cob | 5.5 pF (typ.) at VCB = −20 V - Reduces Miller effect and improves turn-off speed in high-gain common-emitter configurations. |
| PC | 150 mW - Defines thermal derating limit for continuous operation in compact surface-mount layouts without heatsinking. |
| hFE | 30–150 (VCE = −10 V, IC = −20 mA) - Provides design margin for base drive tolerance across production lots and temperature ranges. |
Pinout & Package
Package: TO-236MOD (JEDEC), identical to JEITA SC-59 - 3-pin, surface-mount, plastic-molded package with 0.95 mm pitch and 0.012 g mass; compatible with standard SOT-23 reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal for PNP operation | Connected to highest potential node (e.g., HV rail); defines reference for base bias and collector current direction. |
| Base (B) | Control input for minority-carrier injection | Receives negative current to forward-bias emitter-base junction; requires series resistor to limit IB ≤ −20 mA absolute max. |
| Collector (C) | Output current terminal | Supplies load current to ground or low-impedance return path; withstands −300 V reverse bias when off. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage blocking | −300 V VCBO/VCEO enables direct switching of 200+ V loads without cascaded devices or snubbers. |
| Low saturation voltage | VCE(sat) ≤ −0.5 V ensures <10 mW conduction loss at −20 mA, reducing thermal stress in dense driver arrays. |
| Low output capacitance | Cob = 5.5 pF minimizes feedback coupling and supports >30 MHz bandwidth in amplifier stages. |
| Complementary pairing | Engineered as PNP counterpart to 2SC4497 NPN - simplifies push-pull, phase-splitter, and differential pair designs. |
Applications
| Plasma Display Driver | Nixie Tube Anode Switch |
|---|---|
Use Scenario: Driving individual segment anodes in monochrome plasma display panels requiring 200–280 V switching. IC Role / Device Role / Timing Role: High-voltage PNP switch controlling current flow from HV supply to gas-discharge cell. Use Value: −300 V VCEO rating eliminates need for series-connected transistors; −0.5 V VCE(sat) limits power dissipation per segment to <10 mW. | Use Scenario: Selecting digits in vintage-style Nixie tube displays powered from 170–250 V DC supplies. IC Role / Device Role / Timing Role: Digit-enable switch sinking current from cathode grid through grounded filament circuit. Use Value: Low Cob (5.5 pF) prevents ghosting during rapid digit scanning; TO-236MOD footprint allows dense PCB layout. |
| CRT Brightness Control | High-Voltage Analog Gain Stage |
Use Scenario: Regulating cathode current in monochrome CRT monitors to adjust screen luminance. IC Role / Device Role / Timing Role: Linear-mode PNP current source modulating electron beam intensity via cathode bias. Use Value: hFE = 30–150 ensures stable transconductance over temperature; 150 mW PC permits continuous linear operation at 10–15 mA. | Use Scenario: Building high-input-impedance, high-voltage gain stages in test equipment front-ends. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration for DC-coupled signal conditioning. Use Value: 55 MHz fT and 5.5 pF Cob support flat gain response to 10 MHz; −300 V VCBO enables direct connection to HV bias nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1020(TE85LF) | VCBO = −160 V, VCEO = −160 V, IC = −150 mA, PC = 200 mW - lower voltage rating but higher current/power capability. | Suitable for ≤150 V switching; not recommended for plasma/Nixie drivers requiring ≥250 V blocking. | Select only if system voltage is confirmed ≤150 V and higher current handling is prioritized over voltage margin. |
| MMBT2907ALT1G | VCBO = −60 V, VCEO = −60 V, IC = −600 mA, fT = 200 MHz - much lower voltage, higher current, higher frequency, SOT-23 package. | Applicable only in low-voltage logic-level switching or RF amplification; incompatible with HV display driver roles. | Use only in sub-60 V systems where fast switching or high current is required; not a functional substitute for 2SA1721OTE85LF in HV applications. |
Compared with 2SA1721OTE85LF, 2SA1020(TE85LF) trades voltage headroom for current capacity, while MMBT2907ALT1G offers speed and current at the cost of HV capability - neither provides drop-in replacement in ≥250 V applications.
Availability
2SA1721OTE85LF is available at Aetrix Electronics and suitable for plasma display drivers, Nixie tube anode switches, and CRT brightness control circuits requiring stable component supply and long-lifecycle support.
Supply support for 2SA1721OTE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial longevity.
The 2SA1721OTE85LF belongs to Toshiba's legacy high-voltage bipolar transistor product line, engineered specifically for display panel driving, HV analog control, and industrial switching where robust PNP characteristics are essential.
FAQ
What is the maximum collector-emitter voltage rating for the 2SA1721OTE85LF?
The 2SA1721OTE85LF has a guaranteed VCEO rating of −300 V at IC = −1 mA and IB = 0 mA. This rating is validated per Toshiba's absolute maximum specifications and supports direct use in 250 V display supply rails without additional voltage clamping. Operation beyond this voltage risks irreversible breakdown and must be avoided in all 2SA1721OTE85LF designs.
Is the 2SA1721OTE85LF pin-compatible with the 2SC4497 NPN transistor?
No - the 2SA1721OTE85LF (PNP) and 2SC4497 (NPN) are complementary in electrical function and parameter symmetry (e.g., matching voltage/current ratings), but they are not pin-compatible. Their pinouts differ: 2SA1721OTE85LF uses E-B-C order in TO-236MOD, whereas 2SC4497 uses C-B-E. Board layout must reflect this inversion when implementing push-pull or differential pairs using both devices.
What is the typical transition frequency (fT) of the 2SA1721OTE85LF and how is it measured?
The 2SA1721OTE85LF has a typical transition frequency fT of 55 MHz, measured under standardized conditions: VCE = −10 V, IC = −20 mA, and f = 1 MHz. This value reflects the frequency at which short-circuit current gain drops to unity and confirms usable bandwidth for medium-speed switching and analog amplification up to ~30 MHz in practical circuits.
Does the 2SA1721OTE85LF meet RoHS requirements?
Yes - the 2SA1721OTE85LF is RoHS-compliant per Toshiba's environmental documentation and carries lead-free terminations. The "LF" suffix in the part number explicitly denotes lead-free plating and compliance with EU Directive 2011/65/EU. Full material declarations and test reports are available upon request from Aetrix Electronics for qualifying programs.
What is the package type and marking code for the 2SA1721OTE85LF?
The 2SA1721OTE85LF uses the TO-236MOD (JEDEC) / SC-59 (JEITA) surface-mount package, marked with "2SA1721" on the top surface. The "OTE85LF" suffix indicates tape-and-reel packaging (8 mm carrier tape, 3000 pcs/reel), lead-free finish, and compliance with J-STD-020 moisture sensitivity level 1 - suitable for standard reflow soldering without baking.
2SA1721OTE85LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 300 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 10V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- S-Mini
2SA1721OTE85LF FAQ
1.How can I place an order for 2SA1721OTE85LF through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1721OTE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1721OTE85LF reliable?
The price and inventory of 2SA1721OTE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1721OTE85LF is usually 5 days.
3.What payment methods are accepted for 2SA1721OTE85LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1721OTE85LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1721OTE85LF?
2SA1721OTE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1721OTE85LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1721OTE85LF?
For technical support, including 2SA1721OTE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1721OTE85LF requirements.
6.How does Aetrix verify that 2SA1721OTE85LF is sourced from the original manufacturer or authorized distributors?
All 2SA1721OTE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1721OTE85LF meets industry standards.
7.What is the process for return or replacement of 2SA1721OTE85LF?
All 2SA1721OTE85LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1721OTE85LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1721OTE85LF part is unused and in its original packaging.
Return procedure for 2SA1721OTE85LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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