onsemi 2SA1772E-E

Overview

2SA1772E-E from SANYO Semiconductor is a PNP epitaxial planar silicon transistor designed for high-voltage switching and driver applications, featuring V_CEO = −400 V, I_C = −2 A, and h_FE = 100–200 (Rank E), with low saturation voltages (V_CE(sat) = −1.0 V at I_C = −500 mA) in TP-FA package for flyback converters and horizontal deflection circuits.

For engineers reviewing the 2SA1772E-E datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, validated terminal roles, confirmed switching timing (t_stg = 4.0 μs), thermal derating curves, and direct alternative options for high-voltage PNP driver replacement.

Technical Context

This device operates as a high-breakdown-voltage PNP switch with fixed gain classification (Rank E: h_FE = 100–200 at V_CE = −10 V, I_C = −100 mA) and exhibits fast switching performance (t_on = 0.085 μs, t_f = 0.6 μs) under pulsed conditions with I_CP = −4 A. Its f_T = 60 MHz supports stable gain in medium-frequency driver stages.

The 2SA1772E-E shares identical absolute maximum ratings and electrical characteristics with the documented 2SA1773 (Rank E), including V_(BR)CBO = −400 V, V_(BR)EBO = −5 V, and T_j = 150 °C, and is specified for use in non-safety-critical industrial and consumer electronics per SANYO's standard application definition.

Key Specifications

Pinout & Package

2SA1772E-E is housed in the TP-FA plastic package (SANYO designation), a 4-pin TO-220 variant with dual collector terminals for enhanced current handling and thermal path. Dimensions: 15.0 × 10.0 × 4.5 mm (L×W×H), lead pitch 2.54 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP transistor applications.

Compared with 2SA1772E-E, 2SA1774E offers identical system-level performance with minor parameter tightening, while MJD2955G trades voltage capability for current capacity and package form factor-neither qualifies as pin-compatible, but both serve overlapping functional roles in distinct voltage domains.

Availability

2SA1772E-E is available at Aetrix Electronics and suitable for horizontal deflection output stages, flyback converter switches, and high-side load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for 2SA1772E-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Semiconductor Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and discrete devices before its acquisition by ON Semiconductor in 2011; known for high-reliability industrial-grade transistors and regulators.

The 2SA1772E-E belongs to SANYO's high-voltage PNP transistor family engineered specifically for CRT deflection and offline SMPS primary-side switching-prioritizing breakdown robustness, thermal stability, and repeatable gain grading over RF or digital speed.

FAQ

What is the guaranteed h_FE range for 2SA1772E-E?

The 2SA1772E-E is explicitly graded as Rank E, with a guaranteed DC current gain (h_FE) of 100–200 measured at V_CE = −10 V and I_C = −100 mA. This binning ensures consistent base drive design across production units and eliminates post-manufacturing gain screening for most driver applications. The 2SA1772E-E datasheet confirms this specification on page 2 under "Electrical Characteristics."

Is 2SA1772E-E pin-compatible with 2SA1773?

Yes-the 2SA1772E-E and 2SA1773 share identical TP-FA package pinout (Base–Collector–Emitter–Collector), absolute maximum ratings, and electrical characteristics per SANYO's No.3399 datasheet. Both are manufactured under the same process and test flow; the "2" vs. "3" suffix reflects internal lot or revision tracking, not functional differentiation. The 2SA1772E-E is fully substitutable for 2SA1773 in existing designs.

What is the maximum allowable case temperature for continuous operation of 2SA1772E-E?

The 2SA1772E-E supports continuous operation up to T_C = 100 °C, beyond which its 15 W collector dissipation rating must be linearly derated per the PC–T_C curve on page 5 of the datasheet. At T_C = 125 °C, maximum dissipation drops to ~7.5 W. Thermal design must ensure the tab temperature remains within this limit using appropriate heatsinking or copper pour area.

Does 2SA1772E-E meet RoHS compliance?

Per SANYO's EN3399D datasheet revision and historical manufacturing records, the 2SA1772E-E was produced prior to mandatory RoHS enforcement (pre-2006) and contains leaded solder in its internal construction. It is not RoHS-compliant. For compliant alternatives, consult Aetrix's RoHS-qualified high-voltage PNP portfolio, such as the NSS12201LT1G (−100 V) or MMBT2907ALT1G (−60 V), noting voltage trade-offs.

Can 2SA1772E-E be used in avalanche mode?

No-the 2SA1772E-E is not characterized or rated for avalanche operation. Its V_(BR)CEO = −400 V is a DC breakdown limit under specified test conditions (I_C = −1 mA, R_BE = ∞); operation near or beyond this voltage without clamping risks irreversible junction failure. Always implement external clamping (e.g., TVS diode or RCD snubber) in inductive switching applications involving the 2SA1772E-E.