My Inquiry
My Account
onsemi 2SA1962OTU
- Part No.:
- 2SA1962OTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
2SA1962OTU.pdf
- Description:
- TRANS PNP 250V 17A TO-3P
- Quantity:
- Payment:
- Shipping:
Inventory:3,664
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SA1962OTU from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-3P package, rated for -250V VCEO, -17A IC, 130W power dissipation at TC=25°C, and 30MHz fT, designed for high-fidelity audio output amplifier stages requiring high SOA and low THD.
For engineers reviewing the 2SA1962OTU datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal characteristics, hFE grade O-specification (55–110 at IC=-1A), TO-3P mechanical layout, and direct alternatives with documented gain and packaging differences.
Technical Context
This device operates as a linear PNP power switch with complementary pairing to 2SC5242/FJA4313, supporting Class AB and Class B audio output stages. Its wide Safe Operating Area (SOA) enables reliable operation under reactive loads without secondary breakdown, and its gain linearity (hFE variation ≤2.5:1 across IC=-1A to -7A) minimizes harmonic distortion.
The 2SA1962OTU features low RθJC of 0.96°C/W and thermal stability up to +150°C junction temperature. It uses epitaxial base construction for improved frequency response and reduced storage time, with Cob = 360pF at VCB=-10V enabling predictable high-frequency compensation in feedback networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -250V - Supports rail voltages up to ±125V in push-pull amplifier configurations without breakdown. |
| IC | -17A - Delivers peak output current sufficient for >200W RMS audio amplifiers into 4Ω loads. |
| PD @ TC=25°C | 130W - Enables high-power dissipation with minimal heatsink mass when mounted on copper-clad TO-3P mounting surface. |
| fT | 30MHz - Ensures stable closed-loop bandwidth beyond 100kHz, supporting ultrasonic compensation and low-phase-shift feedback. |
| hFE1 (O grade) | 55–110 @ VCE=-5V, IC=-1A - Tighter gain spread than R grade (80–160), improving matched-pair biasing accuracy in differential input stages. |
| RθJC | 0.96°C/W - Allows precise junction temperature estimation from case thermistor readings in thermal protection circuits. |
| VCE(sat) | -0.4V to -3.0V @ IC=-8A, IB=-0.8A - Low saturation voltage reduces conduction loss and improves efficiency in quasi-complementary output stages. |
Pinout & Package
2SA1962OTU is housed in a TO-3P metal package with isolated collector tab, optimized for high-power thermal transfer and mechanical robustness. Mounting hole diameter is Ø3.20±0.10 mm; overall dimensions are 23.40×18.70×16.50 mm (L×W×H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Current-controlled input terminal | Receives negative base drive; requires series resistor to limit IB ≤ -1.5A max per absolute rating. |
| 2 (Collector) | Main current-carrying terminal (tab-connected) | Electrically tied to metal case; must be insulated from heatsink unless system ground reference permits direct mounting. |
| 3 (Emitter) | Output reference terminal | Serves as common emitter node in common-emitter amplifier topology; carries full load current with minimal voltage drop. |
Key Features
| Feature | Design Value |
|---|---|
| Wide SOA (Safe Operating Area) | Supports non-repetitive pulsed IC up to -100A at VCE=-100V (10ms pulse), preventing thermal runaway during clipping or short-circuit transients. |
| Gain linearity (hFE vs. IC) | hFE2/hFE1 ratio ≤1.7 at IC=-7A/-1A, reducing intermodulation distortion in wide-dynamic-range audio signals. |
| O-grade hFE binning | 55–110 range ensures tighter matching tolerance than R grade, simplifying complementary pair selection with 2SC5242OTU. |
| Low Cob (output capacitance) | 360pF at VCB=-10V enables stable Miller compensation in high-gain output driver stages without excessive phase lag. |
Applications
| High-Fidelity Audio Output Amplifier | General Purpose Power Amplifier |
|---|---|
Use Scenario: Final output stage in discrete Class AB stereo amplifier delivering 100W+ into 4Ω or 8Ω speakers. IC Role / Device Role / Timing Role: PNP power switching element in push-pull output pair, conducting during negative half-cycle of audio waveform. Use Value: High VCEO and SOA prevent breakdown during speaker impedance dips and transient overloads, preserving signal integrity. |
Use Scenario: DC motor drive H-bridge upper-leg switch or linear regulator pass transistor in industrial control systems. IC Role / Device Role / Timing Role: High-current PNP power switch controlling load current direction or regulating output voltage via emitter-follower configuration. Use Value: 130W dissipation and -17A rating enable continuous operation at elevated ambient temperatures without derating penalties. |
| Complementary Audio Pairing | Discrete Power Supply Regulation |
Use Scenario: Matched PNP/NPN pair (e.g., 2SA1962OTU + 2SC5242OTU) in differential input or quasi-complementary output stages. IC Role / Device Role / Timing Role: Complementary transistor providing symmetrical gain, slew rate, and thermal tracking to minimize even-order harmonics. Use Value: O-grade hFE binning and identical TO-3P footprint simplify thermal coupling and bias network design for zero-crossing distortion reduction. |
Use Scenario: Pass transistor in high-current linear power supply (≥10A) with adjustable output voltage and current limiting. IC Role / Device Role / Timing Role: Series pass element operating in active region, dissipating excess input-output voltage difference as heat. Use Value: Low VCE(sat) and high fT support fast transient response and stable regulation under dynamic load steps up to 5A/µs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1943 | Same TO-264 package, higher PD = 150W, identical VCEO/IC, but hFE ungraded (typ. 50–120) | Used where higher thermal margin is required and PCB layout accommodates larger TO-264 footprint | Select 2SA1943 when heatsink interface area allows TO-264 mounting and 20W extra dissipation is needed for extended duty cycle. |
| FJP1943 | TO-220 package, lower PD = 80W, same VCEO/IC, hFE not binned, RθJC = 1.56°C/W | Targeted at cost-sensitive mid-power amplifiers (<60W) with space-constrained layouts | Choose FJP1943 only for designs with <80W thermal budget and no requirement for O-grade gain consistency or SOA validation. |
Compared with 2SA1962OTU, 2SA1943 offers greater thermal headroom in a larger package while sacrificing hFE grading, whereas FJP1943 trades dissipation and SOA for compactness and cost-neither is pin-compatible, and both require PCB layout revision.
Availability
2SA1962OTU is available at Aetrix Electronics and suitable for high-fidelity audio output amplifiers, general-purpose power amplifiers, and discrete power supply regulation requiring stable component supply, consistent hFE binning, and proven SOA performance.
Supply support for 2SA1962OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, and discrete devices for automotive, industrial, and consumer applications.
The 2SA1962OTU belongs to ON Semiconductor's legacy high-power audio transistor product line, engineered specifically for low-distortion, high-reliability linear amplifier output stages demanding wide SOA and gain linearity.
FAQ
What is the hFE range for 2SA1962OTU?
The 2SA1962OTU is binned to the O-grade hFE1 specification: 55 to 110 at VCE = -5V and IC = -1A. This tighter range improves matching predictability versus the R-grade (80–160) and supports precision biasing in differential amplifier inputs. The 2SA1962OTU datasheet confirms this binning applies exclusively to units marked "A1962O" in TO-3P tube packaging.
Is 2SA1962OTU pin-compatible with 2SC5242OTU?
Yes - the 2SA1962OTU and 2SC5242OTU share identical TO-3P package dimensions, pinout (Base–Collector–Emitter), and mounting hole pattern, enabling direct physical placement as complementary pairs. Both are specified for symmetric SOA and gain linearity, making the 2SA1962OTU a verified PNP counterpart to the NPN 2SC5242OTU in push-pull amplifier designs.
What is the maximum safe operating temperature for 2SA1962OTU?
The 2SA1962OTU has a maximum junction temperature (TJ) of +150°C and storage temperature range of -50°C to +150°C. Its RθJC of 0.96°C/W means that at 130W dissipation, the junction-to-case temperature rise is 124.8°C - so case temperature must remain ≤25.2°C to stay within limit. Derating begins above 25°C at 1.04W/°C.
Does 2SA1962OTU have SPICE models available?
Yes - thermal and electrical SPICE models for the 2SA1962OTU are officially provided by ON Semiconductor (formerly Fairchild) and validated against measured SOA, gain, and switching characteristics. These models include junction capacitance, charge storage, and temperature-dependent hFE behavior, and are referenced in the 2SA1962/FJA4213 Rev. C datasheet under "Thermal and electrical Spice models are available."
Can 2SA1962OTU replace FJA4213OTU in existing designs?
Yes - the 2SA1962OTU and FJA4213OTU are functionally identical devices sharing the same TO-3P package, pinout, absolute maximum ratings, and electrical specifications. They differ only in branding (Fairchild vs. ON Semiconductor post-integration) and marking ("A1962O" vs. "J4213O"). No circuit or layout changes are required when substituting 2SA1962OTU for FJA4213OTU.
2SA1962OTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 17 A
- Voltage - Collector Emitter Breakdown (Max):
- 250 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max):
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 1A, 5V
- Power - Max:
- 130 W
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P
2SA1962OTU FAQ
1.How can I place an order for 2SA1962OTU through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1962OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1962OTU reliable?
The price and inventory of 2SA1962OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1962OTU is usually 5 days.
3.What payment methods are accepted for 2SA1962OTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1962OTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1962OTU?
2SA1962OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1962OTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1962OTU?
For technical support, including 2SA1962OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1962OTU requirements.
6.How does Aetrix verify that 2SA1962OTU is sourced from the original manufacturer or authorized distributors?
All 2SA1962OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1962OTU meets industry standards.
7.What is the process for return or replacement of 2SA1962OTU?
All 2SA1962OTU units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1962OTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1962OTU part is unused and in its original packaging.
Return procedure for 2SA1962OTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SA1962OTU Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
