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onsemi 2SA1962RTU
- Part No.:
- 2SA1962RTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
2SA1962RTU.pdf
- Description:
- TRANS PNP 250V 17A TO-3P
- Quantity:
- Payment:
- Shipping:
Inventory:2,831
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Product details
Overview
2SA1962RTU from ON Semiconductor is a PNP epitaxial silicon power transistor designed for high-fidelity audio output and general-purpose power amplification. It delivers IC = −17 A, VCEO = −250 V, PD = 130 W at TC = 25°C, and fT = 30 MHz in TO-3P package. It operates reliably in Class AB audio stages requiring wide safe operating area and low THD.
For engineers reviewing the 2SA1962RTU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP high-voltage/high-current capability, TO-3P thermal performance (RθJC = 0.96°C/W), hFE classification (R grade: 55–110 at −1 A), and complementarity to 2SC5242/FJA4313.
Technical Context
This device is a discrete PNP bipolar junction transistor optimized for linear power amplification. Its −250 V breakdown ratings (BVCBO/BVCEO), −17 A continuous collector current, and 130 W power dissipation support operation in high-voltage rail amplifier outputs and industrial switching regulators.
The R-grade hFE bin (55–110 at VCE = −5 V, IC = −1 A) ensures predictable gain linearity across temperature, while the 360 pF Cob and 30 MHz fT enable stable audio-frequency response with minimal phase shift in feedback loops.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −250 V - Supports ±100 V rail audio amplifiers without breakdown risk under transient overvoltage. |
| IC | −17 A - Enables ≥100 W RMS output into 4 Ω loads in push-pull configurations. |
| PD (TC = 25°C) | 130 W - Requires heatsink with ≤0.96°C/W thermal resistance to maintain TJ < 150°C. |
| fT | 30 MHz - Ensures flat gain and low distortion up to 20 kHz with adequate phase margin. |
| hFE (R grade) | 55–110 @ VCE = −5 V, IC = −1 A - Provides consistent bias stability in emitter-follower driver stages. |
| RθJC | 0.96°C/W - Confirms direct metal-to-heatsink mounting compatibility in TO-3P mechanical layout. |
| Cob | 360 pF @ VCB = −10 V - Limits Miller effect in high-gain voltage amplifier stages. |
Pinout & Package
2SA1962RTU is housed in TO-3P (also known as TO-218) package: insulated metal tab, 3-pin through-hole, 15.6 mm × 19.9 mm footprint, 23.4 mm height, with base-collector-emitter pinout aligned to JEDEC standard orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Current-controlled input terminal | Accepts negative base drive; requires series resistor to limit IB ≤ −1.5 A peak per absolute max rating. |
| 2 (Collector) | Main current sink node | Connected to negative supply rail in PNP output stage; electrically tied to metal tab for thermal conduction. |
| 3 (Emitter) | Output reference terminal | Typically tied to load/ground; must sustain −17 A continuous with < −0.4 V saturation at rated IC/IB. |
Key Features
| Feature | Design Value |
|---|---|
| Wide Safe Operating Area (SOA) | Rated for single-pulse operation up to −100 A / −200 V (10 ms), enabling robust transient overload handling in audio protection circuits. |
| High Gain Linearity | hFE variation < ±15% from −0.1 A to −7 A (R grade), reducing harmonic distortion in Class AB output stages. |
| Complementary Pairing | Engineered as direct PNP counterpart to 2SC5242/FJA4313 NPN, supporting matched thermal tracking and symmetric push-pull design. |
| Thermal Model Availability | SPICE thermal and electrical models provided by ON Semiconductor for accurate transient thermal simulation in amplifier PCB layout. |
Applications
| High-Fidelity Audio Output Amplifier | General-Purpose Power Amplifier |
|---|---|
Use Scenario: Final output stage in stereo receiver delivering 80–120 W RMS into 4–8 Ω speakers with THD < 0.05% at 1 kHz. IC Role / Device Role / Timing Role: PNP power switch in complementary push-pull topology, sinking current from negative rail to load. Use Value: −250 V VCEO and wide SOA prevent secondary breakdown during clipping or reactive load transients. |
Use Scenario: DC motor drive H-bridge upper-leg switch or linear regulator pass element in industrial control cabinets. IC Role / Device Role / Timing Role: High-current PNP pass transistor regulating −48 V or −24 V supply rails with adjustable current limiting. Use Value: −17 A IC and 130 W PD support sustained 10–15 A load currents with active thermal management. |
| Audio Power Supply Regulation | Linear Power Supply Pass Element |
Use Scenario: Symmetric dual-rail ±100 V supply for professional audio power amplifiers with dynamic headroom > 30 dB. IC Role / Device Role / Timing Role: PNP series pass transistor in negative rail regulator, controlled by error amplifier feedback loop. Use Value: −250 V BVCBO allows safe operation with 20% input ripple margin on −120 V unregulated input. |
Use Scenario: Low-noise lab bench power supply delivering 0–−30 V / 0–10 A with < 1 mV RMS ripple. IC Role / Device Role / Timing Role: Main pass device dissipating up to 100 W in constant-current or CV/CC mode. Use Value: 0.96°C/W RθJC enables compact heatsink integration without forced air cooling at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1943 | Same die in TO-264 package; PD = 150 W, RθJC = 0.83°C/W; identical VCEO, IC, fT, hFE specs. | Requires larger PCB footprint and different mounting hardware; better suited for ultra-high-power (>150 W) amplifiers. | Select 2SA1943 when thermal budget demands sub-0.9°C/W junction-to-case resistance and board space permits TO-264. |
| FJP1943 | TO-220 variant; PD = 80 W, RθJC = 1.56°C/W; same VCEO, IC, fT, but lower SOA and hFE linearity. | Targeted at cost-sensitive 30–50 W consumer audio or low-power industrial drivers where heatsink size is constrained. | Choose FJP1943 only for designs with ≤80 W dissipation and no requirement for wide SOA or low-THD linearity. |
Compared with 2SA1962RTU, 2SA1943 offers higher power headroom and superior thermal resistance in a larger package, while FJP1943 trades performance for compactness and cost-neither is pin-compatible, and all require dedicated PCB layout.
Availability
2SA1962RTU is available at Aetrix Electronics and suitable for high-fidelity audio output amplifiers, general-purpose power amplifiers, and linear power supply regulation requiring stable component supply, consistent hFE binning (R grade), and TO-3P mechanical reliability.
Supply support for 2SA1962RTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in intelligent power and signal management semiconductors, serving automotive, industrial, cloud, and consumer markets with energy-efficient solutions.
The 2SA1962RTU belongs to ON Semiconductor's legacy high-power audio transistor family, engineered specifically for low-distortion, high-reliability linear amplification in professional and high-end consumer audio systems.
FAQ
What is the hFE classification for 2SA1962RTU?
The 2SA1962RTU is marked as "R grade", meaning its DC current gain (hFE1) is guaranteed between 55 and 110 when tested at VCE = −5 V and IC = −1 A. This binning ensures predictable bias point stability in audio output stages and simplifies matching with complementary NPN devices like 2SC5242. The 2SA1962RTU datasheet confirms this range applies across the full operating temperature range of −50°C to +150°C.
Is 2SA1962RTU pin-compatible with 2SA1943 or FJP1943?
No, 2SA1962RTU is not pin-compatible with 2SA1943 or FJP1943. Although all three share identical electrical functionality as PNP power transistors, they use different packages: 2SA1962RTU uses TO-3P (pin order Base–Collector–Emitter), 2SA1943 uses TO-264 (same pin order but larger lead spacing and tab geometry), and FJP1943 uses TO-220 (Base–Collector–Emitter but with non-isolated tab and smaller footprint). Each requires unique PCB layout and mounting hardware.
What is the maximum safe continuous collector current for 2SA1962RTU?
The absolute maximum continuous collector current for 2SA1962RTU is −17 A, specified at TC = 25°C with adequate heatsinking. In practice, sustained operation above −10 A requires careful thermal design to keep junction temperature below 150°C, given its RθJC of 0.96°C/W. Derating is mandatory above 25°C case temperature-1.04 W/°C reduction applies per the datasheet's thermal derating curve.
Does 2SA1962RTU have SPICE models available?
Yes, ON Semiconductor provides verified thermal and electrical SPICE models for 2SA1962RTU, including both DC and transient behavioral representations. These models support accurate simulation of gain compression, thermal runaway, and SOA-limited switching behavior in amplifier and regulator designs. Models are downloadable from the official ON Semiconductor product page for 2SA1962RTU under "Design Resources".
Can 2SA1962RTU be used as a direct replacement for FJA4213RTU?
Yes, 2SA1962RTU and FJA4213RTU are functionally identical devices-same die, same TO-3P package, same R-grade hFE binning, and identical electrical specifications-including VCEO, IC, PD, fT, and SOA. The part number change reflects ON Semiconductor's post-Fairchild branding consolidation; no design or layout changes are needed when substituting 2SA1962RTU for FJA4213RTU.
2SA1962RTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 17 A
- Voltage - Collector Emitter Breakdown (Max):
- 250 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max):
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 55 @ 1A, 5V
- Power - Max:
- 130 W
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P
2SA1962RTU FAQ
1.How can I place an order for 2SA1962RTU through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SA1962RTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SA1962RTU reliable?
The price and inventory of 2SA1962RTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1962RTU is usually 5 days.
3.What payment methods are accepted for 2SA1962RTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1962RTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SA1962RTU?
2SA1962RTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SA1962RTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SA1962RTU?
For technical support, including 2SA1962RTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1962RTU requirements.
6.How does Aetrix verify that 2SA1962RTU is sourced from the original manufacturer or authorized distributors?
All 2SA1962RTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1962RTU meets industry standards.
7.What is the process for return or replacement of 2SA1962RTU?
All 2SA1962RTU units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1962RTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SA1962RTU part is unused and in its original packaging.
Return procedure for 2SA1962RTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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