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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA2012-TD-E

Name: 2SA2012-TD-E
Brand: onsemi
SKU: 2SA2012-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA2012-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SA2012-TD-E.pdf

Description:: TRANS PNP 30V 5A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA2012-TD-E from onsemi is a PNP bipolar junction transistor (BJT) optimized for high-current switching applications, featuring –30 V V_CEO, –5 A I_C, low V_CE(sat) down to –140 mV at I_C = –1.5 A / I_B = –30 mA, and f_T = 350 MHz. It is used in relay drivers, lamp drivers, and motor drivers where compact size and thermal efficiency are critical.

For engineers reviewing the 2SA2012-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include its PCP (SOT-89/SC-62) package, –30 V breakdown ratings, high h_FE (200–560), low saturation voltage, and 1.3 W power dissipation on ceramic substrate.

Technical Context

This PNP BJT employs MBIT process technology to achieve large current capacity and low saturation voltage while maintaining stable DC gain across temperature. Its switching performance is characterized by t_on = 50 ns, t_stg = 270 ns, and t_f = 25 ns under specified test conditions.

The device operates with V_EB up to –5 V and supports pulsed collector current up to –8 A. Thermal design is enabled by its 150 °C maximum junction temperature and defined power derating curves for both ambient (T_a) and case (T_c) conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–30 V - Maximum safe collector-emitter voltage before breakdown; defines upper rail limit in PNP switch designs
I_C	–5 A - Continuous collector current rating; supports high-power load switching without forced cooling
V_CE(sat)1	–140 to –210 mV - Low saturation voltage at I_C = –1.5 A / I_B = –30 mA; minimizes conduction loss and heat generation
h_FE	200–560 - DC current gain at V_CE = –2 V, I_C = –500 mA; enables efficient base drive sizing
f_T	350 MHz - Gain-bandwidth product at V_CE = –10 V, I_C = –500 mA; supports medium-frequency switching
P_C (T_c = 25°C)	3.5 W - Maximum collector dissipation with case temperature controlled; enables high-duty-cycle operation
C_ob	30 pF - Output capacitance at V_CB = –10 V, f = 1 MHz; impacts switching speed and EMI in hard-switched circuits

Pinout & Package

2SA2012-TD-E is housed in a PCP package-JEITA/JEDEC-registered as SC-62, identical to SOT-89 and TO-243-with surface-mount footprint, exposed collector tab for thermal conduction, and 0.058 g mass. The package measures 4.5 mm × 2.5 mm × 1.6 mm (L × W × H) with 1.5 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires sufficient negative base current (≤ –600 mA) to saturate the transistor
2	Collector	Main current sink terminal; electrically connected to the exposed metal tab for thermal and electrical grounding
3	Emitter	High-side reference node; connects to positive supply rail in common-emitter PNP configurations

Key Features

Feature	Design Value
Low V_CE(sat)	–140 mV typical at I_C = –1.5 A - Reduces power loss and improves efficiency in high-current switching
Ultrasmall PCP package	SOT-89 footprint with 4.5 mm × 2.5 mm body - Enables compact, slim end-equipment designs
High allowable power dissipation	3.5 W at T_c = 25°C - Supports robust thermal management when mounted on heatsink or ceramic substrate
Large current capacity	–5 A continuous / –8 A pulsed - Suitable for driving relays, lamps, and small DC motors directly
High h_FE range	200–560 at I_C = –500 mA - Allows flexible base drive design with reduced gate-driver complexity

Applications

Relay Drivers	Lamp Drivers
Use Scenario: Driving electromagnetic relays in industrial PLC output modules and automotive body control units. IC Role / Device Role / Timing Role: High-current PNP switch that sinks relay coil current to ground when activated. Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in even at low supply voltages.	Use Scenario: Controlling incandescent or halogen indicator lamps in instrumentation panels and HVAC interfaces. IC Role / Device Role / Timing Role: Constant-current switch regulating lamp on/off state with fast turn-on/turn-off timing. Use Value: 50 ns t_on and 25 ns t_f enable crisp visual feedback without visible flicker or delay.
Motor Drivers	Power Supply Sequencing
Use Scenario: Driving small brushed DC motors (<5 W) in office automation devices and portable medical pumps. IC Role / Device Role / Timing Role: Single-stage PNP high-side switch controlling motor voltage rail connection. Use Value: –5 A I_C rating and 3.5 W P_C allow direct motor control without external MOSFETs or driver ICs.	Use Scenario: Enabling/disabling auxiliary rails in multi-rail power supplies for FPGAs and DSPs. IC Role / Device Role / Timing Role: Precision-controlled PNP pass element managing power-up/down sequencing order. Use Value: Tight V_(BR)CEO tolerance (–30 V) and low leakage (I_CBO ≤ –0.1 μA) ensure stable rail hold-off during standby.

Relay Drivers

Lamp Drivers

Use Scenario: Driving electromagnetic relays in industrial PLC output modules and automotive body control units.

IC Role / Device Role / Timing Role: High-current PNP switch that sinks relay coil current to ground when activated.

Use Value: Low V_CE(sat) minimizes coil voltage drop and ensures reliable relay pull-in even at low supply voltages.

Use Scenario: Controlling incandescent or halogen indicator lamps in instrumentation panels and HVAC interfaces.

IC Role / Device Role / Timing Role: Constant-current switch regulating lamp on/off state with fast turn-on/turn-off timing.

Use Value: 50 ns t_on and 25 ns t_f enable crisp visual feedback without visible flicker or delay.

Motor Drivers

Power Supply Sequencing

Use Scenario: Driving small brushed DC motors (<5 W) in office automation devices and portable medical pumps.

IC Role / Device Role / Timing Role: Single-stage PNP high-side switch controlling motor voltage rail connection.

Use Value: –5 A I_C rating and 3.5 W P_C allow direct motor control without external MOSFETs or driver ICs.

Use Scenario: Enabling/disabling auxiliary rails in multi-rail power supplies for FPGAs and DSPs.

IC Role / Device Role / Timing Role: Precision-controlled PNP pass element managing power-up/down sequencing order.

Use Value: Tight V_(BR)CEO tolerance (–30 V) and low leakage (I_CBO ≤ –0.1 μA) ensure stable rail hold-off during standby.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1774-TL-E	V_CEO = –20 V, I_C = –3 A, V_CE(sat) = –150 mV @ –1 A - Lower voltage/current rating	Suitable only for ≤20 V systems and sub-3 A loads; not recommended for 24 V relay coils	Select when lower cost and smaller footprint are prioritized over 30 V margin and 5 A capability
MJD2955G	V_CEO = –60 V, I_C = –10 A, TO-220 package - Higher voltage/current, larger thermal mass	Requires PCB real estate and heatsinking; better for sustained >5 A or >40 V operation	Choose when long-term reliability under overload or elevated ambient temperature is required

Compared with 2SA2012-TD-E, 2SA1774-TL-E offers cost savings in space-constrained low-voltage designs, while MJD2955G provides headroom for higher stress environments-neither is pin-compatible, but both serve overlapping functional roles in discrete PNP switching.

Availability

2SA2012-TD-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, motor drivers, and power supply sequencing requiring stable component supply, RoHS-compliant packaging, and consistent lot-to-lot parametric performance.

Supply support for 2SA2012-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SA2012-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-reliability discrete switching in space- and thermally-constrained applications.

FAQ

What is the maximum continuous collector current rating for the 2SA2012-TD-E?

The 2SA2012-TD-E has a maximum continuous collector current (I_C) rating of –5 A at T_a = 25°C with proper PCB thermal relief. This rating assumes mounting on a ceramic substrate (250 mm² × 0.8 mm); derating applies above 25°C ambient or case temperature. The 2SA2012-TD-E supports pulsed operation up to –8 A for short durations per its SOA curve.

Does the 2SA2012-TD-E have a Pb-free and RoHS-compliant construction?

Yes, the 2SA2012-TD-E is marked "Pb Free" in its ordering information and complies with RoHS Directive 2011/65/EU. The device uses lead-free solderable terminations and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. The 2SA2012-TD-E is suitable for reflow assembly processes per IPC/JEDEC J-STD-020 standards.

What is the pin configuration and thermal pad connection for the 2SA2012-TD-E?

The 2SA2012-TD-E uses a 3-pin PCP (SOT-89) package with Pin 1 = Base, Pin 2 = Collector (connected to exposed metal tab), and Pin 3 = Emitter. The collector tab must be soldered to a copper pour or thermal pad on the PCB to achieve rated power dissipation. The 2SA2012-TD-E thermal resistance θ_JA is optimized when this tab is properly thermally coupled.

How does the DC current gain (h_FE) of the 2SA2012-TD-E vary with operating conditions?

The 2SA2012-TD-E exhibits h_FE = 200–560 at V_CE = –2 V and I_C = –500 mA, with gain decreasing at higher currents and lower V_CE. The h_FE vs. I_C curve shows peak gain near –500 mA and rolls off above –2 A. Temperature also affects gain: h_FE increases ~0.5%/°C from 25°C to 75°C. The 2SA2012-TD-E datasheet provides full h_FE–I_C plots across –25°C to +75°C.

Can the 2SA2012-TD-E be used in linear amplification applications?

The 2SA2012-TD-E is characterized and qualified for switching operation-not linear amplification. Its f_T = 350 MHz and Cob = 30 pF support fast switching, but it lacks guaranteed linearity specs (e.g., THD, distortion, or small-signal parameters) in the datasheet. For analog amplification, onsemi recommends dedicated RF or audio transistors such as the 2SC4793 or MMBT5551. The 2SA2012-TD-E should be operated in saturation/cutoff for intended use cases.

2SA2012-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 210mV @ 30mA, 1.5A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 3.5 W

Frequency - Transition:: 420MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SA2012-TD-E FAQ

1.How can I place an order for 2SA2012-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA2012-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA2012-TD-E reliable?

The price and inventory of 2SA2012-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA2012-TD-E is usually 5 days.

3.What payment methods are accepted for 2SA2012-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA2012-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA2012-TD-E?

2SA2012-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA2012-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA2012-TD-E?

For technical support, including 2SA2012-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA2012-TD-E requirements.

6.How does Aetrix verify that 2SA2012-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SA2012-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA2012-TD-E meets industry standards.

7.What is the process for return or replacement of 2SA2012-TD-E?

All 2SA2012-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA2012-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA2012-TD-E part is unused and in its original packaging.

Return procedure for 2SA2012-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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