Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA2013-TD-E

Name: 2SA2013-TD-E
Brand: onsemi
SKU: 2SA2013-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SA2013-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SA2013-TD-E.pdf

Description:: TRANS PNP 50V 4A PCP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,196

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SA2013-TD-E from onsemi is a PNP bipolar junction transistor (BJT) rated for −50 V V_CEO, −4 A I_C, and 1.3 W power dissipation on ceramic substrate, with low V_CE(sat) of −85 mV at −1 A/−50 mA, optimized for high-current switching in relay and motor driver circuits.

For engineers reviewing the 2SA2013-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SC-62 (SOT-89) package thermal performance, guaranteed h_FE ≥200 at −500 mA, and documented f_T = 400 MHz for high-speed switching designs.

Technical Context

This PNP transistor employs FBET and MBIT processes to achieve low saturation voltage and high-speed switching (t_on = 35 ns, t_f = 20 ns). Its −50 V V_CEO and −4 A I_C rating support robust operation in industrial load-switching applications where reverse-biased breakdown margin and pulse current handling are critical.

The device is thermally optimized for mounting on 250 mm² × 0.8 mm ceramic substrates, delivering 1.3 W continuous dissipation at T_a = 25°C and up to 3.5 W at T_c = 25°C, with junction temperature limited to 150°C and storage range spanning −55°C to +150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum safe collector-emitter voltage under open-base condition; defines blocking capability in high-side switch configurations
I_C	−4 A - Continuous DC collector current; supports driving relays, lamps, or small DC motors without forced cooling
V_CE(sat) @ −1A/−50mA	−85 mV (typ) - Low saturation voltage reduces conduction loss and self-heating in high-duty-cycle switching
h_FE @ −2V, −500mA	200–560 - High DC current gain enables efficient base drive with minimal control current
f_T	400 MHz - Gain-bandwidth product confirms suitability for >100 kHz PWM and fast digital switching
P_C (ceramic)	1.3 W - Power dissipation limit when mounted on specified 250 mm² ceramic substrate; determines heatsinking requirements
t_on/t_f	35 ns / 20 ns - Verified turn-on and fall times ensure clean edge transitions in timing-critical drivers

Pinout & Package

2SA2013-TD-E uses the PCP package, identical to JEITA SC-62 and JEDEC SOT-89 outlines, featuring a 3-pin surface-mount configuration with exposed collector tab for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −500 mA max base current for full saturation at −4 A collector current
2	Collector	Main current output path; electrically connected to exposed metal tab for direct thermal coupling to PCB copper
3	Emitter	Current return path; tied to system ground or negative rail in high-side switch topologies

Key Features

Feature	Design Value
Low V_CE(sat)	−85 mV typ at −1 A ensures <100 mW conduction loss per switch, reducing thermal stress in dense layouts
High-speed switching	35 ns turn-on and 20 ns fall time enable stable operation at PWM frequencies up to 5 MHz
Large current capacity	−4 A continuous and −7 A pulsed rating supports direct drive of solenoids and 12 V DC motors
Ultrasmall SOT-89 footprint	4.5 mm × 2.5 mm × 1.6 mm outline allows compact placement while maintaining 1.3 W thermal capability
High allowable power dissipation	3.5 W at case temperature = 25°C permits use without external heatsink in moderate ambient conditions

Applications

Relay Driver Circuit	Lamp Driver Module
Use Scenario: Driving 24 VDC electromagnetic relays with coil resistance ≤100 Ω in PLC I/O modules. IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current path to ground. Use Value: −85 mV V_CE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in at low supply margins.	Use Scenario: Switching incandescent or LED indicator lamps in automotive dashboard clusters. IC Role / Device Role / Timing Role: Constant-current sink for lamp anodes referenced to battery rail. Use Value: 400 MHz f_T supports PWM dimming up to 10 kHz without phase lag or brightness instability.
Motor Driver Stage	Power Supply Enable Switch
Use Scenario: Controlling direction and enable of 12 V brushed DC motors in robotics actuators. IC Role / Device Role / Timing Role: Half-bridge high-side switch in H-bridge configuration. Use Value: −7 A pulse rating handles motor stall currents; −50 V V_CEO provides margin against inductive kickback.	Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V LDO outputs in multi-rail embedded systems. IC Role / Device Role / Timing Role: Low-loss series pass element in controlled power-up sequencing. Use Value: 1.3 W thermal rating allows sustained operation during extended enable periods without derating.

Relay Driver Circuit

Lamp Driver Module

Use Scenario: Driving 24 VDC electromagnetic relays with coil resistance ≤100 Ω in PLC I/O modules.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current path to ground.

Use Value: −85 mV V_CE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in at low supply margins.

Use Scenario: Switching incandescent or LED indicator lamps in automotive dashboard clusters.

IC Role / Device Role / Timing Role: Constant-current sink for lamp anodes referenced to battery rail.

Use Value: 400 MHz f_T supports PWM dimming up to 10 kHz without phase lag or brightness instability.

Motor Driver Stage

Power Supply Enable Switch

Use Scenario: Controlling direction and enable of 12 V brushed DC motors in robotics actuators.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in H-bridge configuration.

Use Value: −7 A pulse rating handles motor stall currents; −50 V V_CEO provides margin against inductive kickback.

Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V LDO outputs in multi-rail embedded systems.

IC Role / Device Role / Timing Role: Low-loss series pass element in controlled power-up sequencing.

Use Value: 1.3 W thermal rating allows sustained operation during extended enable periods without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1774EBTLR	V_CEO = −50 V, I_C = −3 A, V_CE(sat) = −100 mV @ −1 A - lower current rating and higher saturation voltage	Less suitable for >3 A loads; acceptable for lower-power relay or LED drivers	Select when board space constraints favor smaller SOT-23 package and peak current ≤3 A
MMDT3906-7-F	V_CEO = −40 V, I_C = −200 mA, f_T = 250 MHz - significantly lower voltage/current ratings	Only appropriate for signal-level switching; not rated for motor or relay loads	Choose only for logic-level interface or biasing circuits where 2SA2013-TD-E's power capability is unnecessary

Compared with 2SA1774EBTLR and MMDT3906-7-F, the 2SA2013-TD-E delivers superior current handling (−4 A vs. −3 A/−0.2 A), lower saturation loss (−85 mV vs. −100 mV), and higher thermal capability (1.3 W vs. 0.35 W), making it the preferred choice for industrial load switching where reliability under sustained current is critical.

Availability

2SA2013-TD-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and motor drivers requiring stable component supply across automotive, industrial control, and embedded power management programs.

Supply support for 2SA2013-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SA2013-TD-E belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-reliability discrete switching in space-constrained, thermally demanding applications such as factory automation and transportation electronics.

FAQ

What is the maximum continuous collector current for the 2SA2013-TD-E?

The 2SA2013-TD-E has a maximum continuous collector current (I_C) of −4 A at T_a = 25°C when mounted on a ceramic substrate (250 mm² × 0.8 mm). This rating assumes proper thermal management; derating applies above 25°C ambient, with zero dissipation at 150°C junction temperature. The 2SA2013-TD-E must not exceed this limit in DC or high-duty-cycle PWM operation.

Does the 2SA2013-TD-E have Pb-free packaging?

Yes, the 2SA2013-TD-E is Pb-free and RoHS-compliant, as confirmed by its "TD-E" suffix and ordering information stating "Pb Free" in the official onsemi documentation. The device meets JESD97 and JEDEC JS-001 ESD standards, and the PCP package uses lead-free solderable terminations compatible with standard reflow profiles.

What is the pin configuration of the 2SA2013-TD-E in the PCP (SOT-89) package?

The 2SA2013-TD-E uses a 3-pin PCP (SC-62/SOT-89) package with standardized pinout: Pin 1 = Base, Pin 2 = Collector (connected to exposed metal tab), Pin 3 = Emitter. This configuration is explicitly shown in the "Electrical Connection" diagram and verified in the "Marking" section of the onsemi datasheet for 2SA2013-TD-E.

Can the 2SA2013-TD-E be used in high-frequency switching applications?

Yes, the 2SA2013-TD-E supports high-frequency switching with a gain-bandwidth product (f_T) of 400 MHz and measured switching times of t_on = 35 ns and t_f = 20 ns. These parameters are tested under defined conditions (V_CE = −10 V, I_C = −500 mA), confirming suitability for PWM-driven loads operating up to several megahertz, provided layout minimizes parasitic inductance.

What is the thermal resistance of the 2SA2013-TD-E when mounted on a ceramic substrate?

When mounted on a 250 mm² × 0.8 mm ceramic substrate, the 2SA2013-TD-E achieves a power dissipation (P_C) of 1.3 W at T_a = 25°C. While the datasheet does not list explicit θ_JA or θ_JC values, the 1.3 W rating implies an effective thermal resistance of approximately 65°C/W from junction-to-ambient under those conditions. The 2SA2013-TD-E's exposed collector tab enables direct thermal transfer to the substrate.

2SA2013-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 340mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 3.5 W

Frequency - Transition:: 400MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SA2013-TD-E FAQ

1.How can I place an order for 2SA2013-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA2013-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA2013-TD-E reliable?

The price and inventory of 2SA2013-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA2013-TD-E is usually 5 days.

3.What payment methods are accepted for 2SA2013-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA2013-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA2013-TD-E?

2SA2013-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA2013-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA2013-TD-E?

For technical support, including 2SA2013-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA2013-TD-E requirements.

6.How does Aetrix verify that 2SA2013-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SA2013-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA2013-TD-E meets industry standards.

7.What is the process for return or replacement of 2SA2013-TD-E?

All 2SA2013-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA2013-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA2013-TD-E part is unused and in its original packaging.

Return procedure for 2SA2013-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…