onsemi 2SA2023

Overview

2SA2023 from SANYO is a PNP epitaxial planar silicon transistor in TO-126ML package, rated for −60 V V_CEO, −5 A I_C, and 1.3 W P_C at T_c = 25°C, optimized for high-speed switching in lamp drivers, inverters, and power amplifiers.

For engineers reviewing the 2SA2023 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal derating curves, switching timing data (t_on = 1.0 µs, t_off = 5.0 µs), h_FE vs. I_C behavior across −40°C to +120°C, and V_CE(sat) = −0.4 V at I_C/I_B = −20.

Technical Context

The 2SA2023 operates as a medium-power PNP switching transistor with low saturation voltage (V_CE(sat) ≤ −0.4 V at I_C = −2.5 A, I_B = −0.125 A) and high current gain linearity (h_FE = 110–200 at I_C = −1 A, V_CE = −2 V). Its f_T = 100 MHz at V_CE = −5 V, I_C = −1 A supports fast switching in strobe and converter circuits.

Thermal performance is defined by junction-to-case resistance and derated power dissipation: P_C drops from 1.3 W at T_c = 25°C to 0 W at T_c = 150°C, with maximum junction temperature T_j = +150°C. The emitter and base terminals are reversed relative to standard TO-126ML orientation per SANYO's note.

Key Specifications

Pinout & Package

Package: TO-126ML (micaless, surface-mount compatible), with pin 1 = Base, pin 2 = Collector, pin 3 = Emitter - note: emitter and base assignments are reversed versus standard TO-126ML orientation per SANYO specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-speed switching transistor applications.

Compared with 2SA1943 and MJD2955, the 2SA2023 uniquely balances −60 V rating, −5 A current, sub-µs switching, and −0.4 V saturation in a compact TO-126ML package-making it optimal for space-constrained, medium-frequency switching where thermal and timing margins are tight.

Availability

2SA2023 is available at Aetrix Electronics and suitable for fluorescent lamp ballasts, automotive power amplifiers, strobe flash circuits, and industrial DC motor drivers requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SA2023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog and power discrete devices, later integrated into ON Semiconductor in 2011.

The 2SA2023 belongs to SANYO's high-speed PNP/NPN transistor family designed specifically for inverter, converter, and power amplifier applications demanding low saturation voltage and stable gain across temperature.

FAQ

What is the maximum junction temperature for the 2SA2023?

The 2SA2023 has a maximum junction temperature (T_j) of +150°C, as specified in its Absolute Maximum Ratings table. This limit must not be exceeded during operation-even momentarily-to prevent irreversible degradation. Thermal design must ensure that actual T_j remains below this value under worst-case ambient and power dissipation conditions. Derating curves in the datasheet show P_C falling to zero at T_c = 150°C, confirming the thermal boundary. Always verify T_j using measured case temperature and published R_θJC.

Is the 2SA2023 pin-compatible with standard TO-126 transistors?

No-the 2SA2023 uses a nonstandard TO-126ML pinout where emitter and base terminals are reversed relative to conventional TO-126 devices. Pin 1 is Base, pin 2 is Collector, and pin 3 is Emitter, but SANYO explicitly notes this inversion in the datasheet. Using the 2SA2023 in a PCB layout designed for standard TO-126 will result in incorrect biasing and potential device failure. Always confirm pin assignments using the official 2SA2023 marking diagram and footprint.

What is the typical DC current gain (hFE) of the 2SA2023 at −1 A collector current?

The typical DC current gain (h_FE) of the 2SA2023 is 150 at V_CE = −2 V and I_C = −1 A, with a guaranteed minimum of 110 and maximum of 200 across the −40°C to +120°C operating range. This value is confirmed in the "DC Current Gain vs. Collector Current" graph (IT00514) and supports predictable base drive design for switching applications. Gain remains stable over temperature, varying less than ±15% from 25°C to 120°C at fixed I_C.

Can the 2SA2023 be used in linear amplifier configurations?

Yes-the 2SA2023 is characterized for linear operation with specified h_FE, f_T, and V_CE(sat) across wide current and temperature ranges, and its SOA curve supports safe operation in Class A/B amplifiers. However, its primary design focus is high-speed switching; for precision linear applications, dedicated audio transistors like 2SA1943 offer better THD and f_T consistency. Use the 2SA2023 in linear mode only where its −60 V/−5 A/100 MHz specs meet the specific gain-bandwidth and thermal requirements of the 2SA2023 circuit.

Does the 2SA2023 require a heatsink in typical 2 A switching applications?

Yes-when operating continuously at I_C = −2 A with V_CE ≈ −0.4 V (P_D ≈ 0.8 W), the 2SA2023 exceeds its natural convection dissipation capability. At T_a = 50°C, the derating curve shows usable P_C falls below 0.8 W; therefore, a minimal heatsink (e.g., 10 cm² aluminum fin) is required to maintain T_j < 125°C. The TO-126ML package's micaless construction improves thermal transfer but does not eliminate the need for heatsinking above ~0.5 W sustained dissipation.