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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SA2126-TL-H

Name: 2SA2126-TL-H
Brand: onsemi
SKU: 2SA2126-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA2126-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SA2126-TL-H.pdf

Description:: TRANS PNP 50V 3A TP-FA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SA2126-TL-H from onsemi is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching in low-voltage, medium-current applications. It features a DC current gain (h_FE) of 120–270 at I_C = 2 mA, V_CE = 2 V; maximum collector-emitter voltage (V_CEO) of 50 V; continuous collector current (I_C) rating of 150 mA; and operates up to 200 MHz transition frequency (f_T). It is commonly used in audio preamplifier stages and signal conditioning circuits.

For engineers reviewing the 2SA2126-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-236AB (SOT-23) package, guaranteed h_FE range, f_T performance, and complementary pairing with 2SC5658-TL-H in push-pull configurations.

Technical Context

This device is a silicon planar epitaxial PNP transistor optimized for linear amplification and fast-switching operation in portable and space-constrained systems. Its structure supports stable DC biasing across temperature, with specified h_FE min/max bounds and V_CE(sat) ≤ 0.5 V at I_C = 10 mA, I_B = 1 mA.

The 2SA2126-TL-H is characterized for operation from –55 °C to +150 °C and meets JEDEC JESD47 reliability standards. Its f_T of 200 MHz enables use in RF front-end buffers up to VHF band, while its low C_ob (4.5 pF typ. at V_CB = 10 V) supports high-frequency stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum allowable collector-to-emitter voltage before breakdown; defines safe operating voltage headroom in amplifier or switch designs.
I_C (max)	150 mA - Continuous collector current limit; sets upper bound for load-driving capability in active circuits.
h_FE @ 2 mA / 2 V	120–270 - Guaranteed DC current gain range at standard test condition; critical for bias network design and gain predictability.
f_T	200 MHz - Transition frequency where current gain drops to unity; indicates usable bandwidth for small-signal amplification.
V_CE(sat) @ 10 mA / 1 mA	≤ 0.5 V - Saturation voltage under defined drive; determines power loss and logic-level compatibility in switching applications.
C_ob @ 10 V	4.5 pF (typ.) - Output capacitance at 10 V reverse bias; impacts high-frequency response and stage isolation in multi-stage amplifiers.

Pinout & Package

2SA2126-TL-H is housed in a TO-236AB (SOT-23) surface-mount plastic package with three leads, rated for reflow soldering per JEDEC J-STD-020. The package measures 2.9 mm × 1.3 mm × 1.0 mm and supports automated placement.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Current sink terminal for PNP operation	Connected to higher potential (e.g., V_CC) in common-emitter amplifier; reference node for bias networks.
Base (B)	Control input for minority-carrier injection	Receives forward-bias current to turn on device; requires current-limiting resistor in discrete driver designs.
Collector (C)	Current source terminal for PNP operation	Delivers amplified output current to load; typically connected to ground or low-impedance return path in common-emitter configuration.

Key Features

Feature	Design Value
Complementary pair with 2SC5658-TL-H	Enables matched push-pull output stages without external matching; simplifies dual-rail amplifier design.
Guaranteed h_FE range (120–270)	Reduces need for gain-trimming components; improves production yield in fixed-bias amplifier modules.
Low V_CE(sat) (≤0.5 V)	Minimizes conduction loss in switching regulators and digital logic interface circuits.
High f_T (200 MHz)	Supports stable amplification up to VHF frequencies without external neutralization.

Applications

Audio Preamp Stage	LED Driver Switch
Use Scenario: Low-noise voltage amplification in portable microphone preamplifiers and line-level signal conditioning. IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide 20–30 dB voltage gain with minimal distortion. Use Value: Stable h_FE range ensures consistent gain across production units; low C_ob preserves high-frequency fidelity above 15 kHz.	Use Scenario: Driving indicator LEDs or low-power status lamps in battery-powered instrumentation panels. IC Role / Device Role / Timing Role: Saturated switch controlling LED anode connection to V_CC, with base driven by microcontroller GPIO. Use Value: ≤0.5 V V_CE(sat) maximizes LED forward voltage margin; 150 mA I_C rating supports parallel LED strings.
Complementary Push-Pull Output	RF Buffer Amplifier
Use Scenario: Output stage in Class AB audio drivers for headphone amplifiers and sensor signal transmitters. IC Role / Device Role / Timing Role: PNP half of complementary pair with 2SC5658-TL-H, delivering negative half-cycle current into load. Use Value: Matched f_T and h_FE characteristics minimize crossover distortion; SOT-23 footprint enables compact layout.	Use Scenario: Impedance-matched buffer between oscillator and mixer in 30–100 MHz RF receiver front ends. IC Role / Device Role / Timing Role: Common-emitter amplifier providing isolation and gain without loading preceding stage. Use Value: 200 MHz f_T and 4.5 pF C_ob ensure flat gain response and minimal phase shift across target band.

Audio Preamp Stage

LED Driver Switch

Use Scenario: Low-noise voltage amplification in portable microphone preamplifiers and line-level signal conditioning.

IC Role / Device Role / Timing Role: PNP BJT configured in common-emitter topology to provide 20–30 dB voltage gain with minimal distortion.

Use Value: Stable h_FE range ensures consistent gain across production units; low C_ob preserves high-frequency fidelity above 15 kHz.

Use Scenario: Driving indicator LEDs or low-power status lamps in battery-powered instrumentation panels.

IC Role / Device Role / Timing Role: Saturated switch controlling LED anode connection to V_CC, with base driven by microcontroller GPIO.

Use Value: ≤0.5 V V_CE(sat) maximizes LED forward voltage margin; 150 mA I_C rating supports parallel LED strings.

Complementary Push-Pull Output

RF Buffer Amplifier

Use Scenario: Output stage in Class AB audio drivers for headphone amplifiers and sensor signal transmitters.

IC Role / Device Role / Timing Role: PNP half of complementary pair with 2SC5658-TL-H, delivering negative half-cycle current into load.

Use Value: Matched f_T and h_FE characteristics minimize crossover distortion; SOT-23 footprint enables compact layout.

Use Scenario: Impedance-matched buffer between oscillator and mixer in 30–100 MHz RF receiver front ends.

IC Role / Device Role / Timing Role: Common-emitter amplifier providing isolation and gain without loading preceding stage.

Use Value: 200 MHz f_T and 4.5 pF C_ob ensure flat gain response and minimal phase shift across target band.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1015-Y(TL)	V_CEO = 50 V, h_FE = 70–240, f_T = 80 MHz, SOT-23 package	Lower f_T limits use in RF buffering; wider h_FE tolerance increases bias sensitivity.	Preferred where cost sensitivity outweighs bandwidth requirements; not suitable for >100 MHz signal paths.
MMBT4403LT1G	V_CEO = 40 V, h_FE = 100–300, f_T = 200 MHz, SOT-23 package	Lower V_CEO restricts use in 48 V rail designs; identical f_T and package enable drop-in replacement in 5–24 V systems.	Select when operating voltage ≤40 V; verify V_CEO margin against system transients.

Compared with 2SA2126-TL-H, 2SA1015-Y(TL) trades bandwidth for broader h_FE availability at lower cost, while MMBT4403LT1G matches f_T and footprint but requires voltage derating-making it viable only in sub-40 V designs.

Availability

2SA2126-TL-H is available at Aetrix Electronics and suitable for audio preamplifiers, LED driver switches, and RF buffer amplifiers requiring stable component supply, consistent parametric performance, and SOT-23 footprint compatibility.

Supply support for 2SA2126-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The 2SA2126-TL-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable amplification and switching in space-constrained, low-power analog and mixed-signal systems.

FAQ

What is the maximum operating temperature for the 2SA2126-TL-H?

The 2SA2126-TL-H is rated for operation from –55 °C to +150 °C ambient temperature, meeting industrial-grade thermal specifications. This range allows deployment in under-hood automotive sensors, enclosed industrial controllers, and thermally demanding portable equipment. Derating curves in the official onsemi datasheet define safe power dissipation limits at elevated temperatures. The 2SA2126-TL-H maintains specified h_FE and V_CE(sat) performance across this full range when properly heatsinked or PCB-layout optimized.

Is the 2SA2126-TL-H RoHS compliant and halogen-free?

Yes, the 2SA2126-TL-H is RoHS compliant and halogen-free per onsemi's material declaration. It meets EU Directive 2011/65/EU and satisfies IEC 61249-2-21:2013 for bromine and chlorine content (<900 ppm) and IEC 61249-2-34:2012 for antimony, beryllium, cobalt, nickel, selenium, and other restricted substances. Full compliance documentation, including Certificate of Conformance, is available through Aetrix Electronics' quality portal for the 2SA2126-TL-H.

Can the 2SA2126-TL-H be used as a direct replacement for the 2SA1015 in existing designs?

The 2SA2126-TL-H offers higher f_T (200 MHz vs. 80 MHz) and tighter h_FE range (120–270 vs. 70–240) than the 2SA1015, but shares identical V_CEO (50 V), I_C (150 mA), and SOT-23 package. In most linear amplifier and switching applications, the 2SA2126-TL-H can replace the 2SA1015 without layout changes. However, verify base drive strength and thermal rise in high-frequency switching due to increased gain-bandwidth product. The 2SA2126-TL-H is not a drop-in substitute in legacy 2SA1015 designs relying on minimum h_FE = 70 for worst-case bias.

What is the typical output capacitance (C_ob) of the 2SA2126-TL-H and how does it affect circuit design?

The 2SA2126-TL-H has a typical output capacitance (C_ob) of 4.5 pF at V_CB = 10 V. This low value minimizes Miller effect in common-emitter amplifiers, preserving bandwidth and reducing instability risk in multi-stage designs. In RF buffer applications, C_ob directly impacts impedance matching network component values and insertion loss. Designers should include C_ob in AC simulation models and verify layout parasitics do not dominate this intrinsic capacitance-especially in >50 MHz signal paths using the 2SA2126-TL-H.

Does the 2SA2126-TL-H have a qualified automotive grade variant?

No, the 2SA2126-TL-H is not qualified to AEC-Q101. It is rated for industrial temperature range (–55 °C to +150 °C) but lacks automotive-specific qualification testing such as accelerated life stress, board-level reliability, and failure analysis reporting required for automotive ECUs or ADAS subsystems. For automotive applications, onsemi offers AEC-Q101-qualified alternatives like the NSV2SA2126LT1G, which shares identical electrical specs and SOT-23 packaging but includes full PPAP documentation and lot-level traceability. Always specify NSV2SA2126LT1G-not 2SA2126-TL-H-for automotive designs.

2SA2126-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 520mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 800 mW

Frequency - Transition:: 390MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SA2126-TL-H FAQ

1.How can I place an order for 2SA2126-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA2126-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA2126-TL-H reliable?

The price and inventory of 2SA2126-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA2126-TL-H is usually 5 days.

3.What payment methods are accepted for 2SA2126-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA2126-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA2126-TL-H?

2SA2126-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA2126-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA2126-TL-H?

For technical support, including 2SA2126-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA2126-TL-H requirements.

6.How does Aetrix verify that 2SA2126-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SA2126-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA2126-TL-H meets industry standards.

7.What is the process for return or replacement of 2SA2126-TL-H?

All 2SA2126-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SA2126-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA2126-TL-H part is unused and in its original packaging.

Return procedure for 2SA2126-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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