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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Toshiba Semiconductor and Storage 2SA2142(TE16L1,NQ)

Name: 2SA2142(TE16L1,NQ)
Brand: Toshiba Semiconductor and Storage
SKU: 2SA2142(TE16L1,NQ)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA2142(TE16L1,NQ)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SA2142(TE16L1,NQ).pdf

Description:: TRANS PNP 600V 0.5A PW-MOLD

Quantity:: RFQ Add To RFQ list

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Inventory:3,894

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Product details

Overview

2SA2142(TE16L1,NQ) from Toshiba is a silicon PNP bipolar junction transistor designed for high-voltage switching applications, featuring V_CEO = −600 V, I_C = −0.5 A (DC), P_C = 15 W, and f_T = 35 MHz. It operates in common-emitter configuration with h_FE ranging from 70 to 500 at I_C = −1 mA and is used in flyback converters, horizontal deflection circuits, and HV pulse generators.

For engineers reviewing the 2SA2142(TE16L1,NQ) datasheet, 2SA2142(TE16L1,NQ) pinout, 2SA2142(TE16L1,NQ) application, or 2SA2142(TE16L1,NQ) equivalent, key selection criteria include verified −600 V breakdown rating, safe operating area under pulsed conditions, thermal resistance r_th(j−c) derating curves, and RoHS-compliant marking per JEITA package code 2-7J1A.

Technical Context

This PNP transistor uses triple-diffused silicon process technology to achieve high collector-base and collector-emitter breakdown voltages (V_CBO = V_CEO = −600 V) while maintaining usable DC current gain (h_FE ≥ 70 at I_C = −1 mA). Its switching performance is characterized by t_r = 0.2 μs, t_f = 0.2 μs, and t_stg = 2.3 μs under specified IB1/IB2 drive conditions.

The device's safe operating area (SOA) is defined up to T_c = 100°C with single nonrepetitive pulse limits, and its thermal design requires attention to transient thermal resistance r_th(j−c), which varies from 0.1°C/W at 10 μs to 1.0°C/W at DC operation - critical for high-voltage snubberless switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−600 V - supports primary-side switching in offline SMPS up to 400 VAC input with margin
I_C (DC)	−0.5 A - defines continuous conduction mode current handling in HV relay drivers or line-output stages
P_C	15 W at T_c = 25°C - requires heatsinking for >1 W dissipation in sustained operation
h_FE	70–500 - enables base drive optimization across load ranges without external gain staging
f_T	35 MHz - sufficient for <100 kHz switching frequencies with controlled rise/fall times
V_CE(sat)	≤ −1.0 V at I_C = −100 mA, I_B = −10 mA - minimizes conduction loss in saturated-switch applications
C_ob	24 pF at V_CB = −10 V - impacts turn-off energy and EMI in hard-switched HV circuits

Pinout & Package

Package: TO-220AB (JEITA 2-7J1A), 3-lead through-hole, 0.36 g typical weight, isolated collector tab. Mounting requires electrically insulated heatsink interface due to collector-to-case continuity.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-voltage current path	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground reference permits
Base (B)	Current-controlled input node	Requires negative bias relative to emitter to forward-bias PNP junction; drive circuit must sink current
Emitter (E)	Reference terminal for base drive and output return	Serves as common node for gate driver references and feedback sensing in grounded-emitter configurations

Key Features

Feature	Design Value
High V_CEO rating	−600 V enables direct replacement of legacy HV transistors in CRT deflection and industrial HV supplies without redesign
Triple-diffused structure	Provides stable h_FE and low leakage (I_CBO ≤ −10 μA) under high V_CB stress, improving long-term reliability
Controlled switching times	t_r/t_f = 0.2 μs supports clean edge control in resonant and quasi-resonant converters
RoHS-compliant marking	Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE - meets EU Directive 2011/65/EU without lead exemptions
Derated SOA at elevated T_c	SOA boundary shifts linearly with case temperature - enables predictable thermal design up to T_c = 100°C

Applications

Horizontal Deflection Circuits	Flyback Converter Switches
Use Scenario: Horizontal output stage in CRT-based monitors and TVs driving deflection yoke with high-voltage retrace pulses. IC Role / Device Role / Timing Role: PNP switching transistor operating in grounded-emitter configuration with active base clamping. Use Value: −600 V V_CEO withstands flyback voltage spikes exceeding 450 V during line retrace, reducing need for external snubbers.	Use Scenario: Primary-side switch in low-cost AC/DC adapters and auxiliary power supplies. IC Role / Device Role / Timing Role: Saturated-mode HV switch controlling energy transfer into transformer primary winding. Use Value: Low V_CE(sat) (≤ −1.0 V) and high h_FE reduce base drive losses and improve light-load efficiency.
Relay Drivers	Pulse Generators
Use Scenario: High-side driver for electromagnetic relays in industrial control panels requiring >400 V isolation. IC Role / Device Role / Timing Role: PNP current sink enabling direct interface with microcontroller GPIO pins via level-shifting resistors. Use Value: Verified I_C = −0.5 A DC rating ensures reliable coil energization across temperature range without thermal runaway.	Use Scenario: Fast-rise HV pulse source for laser diode triggering, spark gap control, or time-domain reflectometry. IC Role / Device Role / Timing Role: Switching element in avalanche-mode or saturated pulse circuits with tight timing control. Use Value: 35 MHz f_T and sub-μs switching times (t_r/t_f = 0.2 μs) support <500 ns pulse widths with minimal overshoot.

Horizontal Deflection Circuits

Flyback Converter Switches

Use Scenario: Horizontal output stage in CRT-based monitors and TVs driving deflection yoke with high-voltage retrace pulses.

IC Role / Device Role / Timing Role: PNP switching transistor operating in grounded-emitter configuration with active base clamping.

Use Value: −600 V V_CEO withstands flyback voltage spikes exceeding 450 V during line retrace, reducing need for external snubbers.

Use Scenario: Primary-side switch in low-cost AC/DC adapters and auxiliary power supplies.

IC Role / Device Role / Timing Role: Saturated-mode HV switch controlling energy transfer into transformer primary winding.

Use Value: Low V_CE(sat) (≤ −1.0 V) and high h_FE reduce base drive losses and improve light-load efficiency.

Relay Drivers

Pulse Generators

Use Scenario: High-side driver for electromagnetic relays in industrial control panels requiring >400 V isolation.

IC Role / Device Role / Timing Role: PNP current sink enabling direct interface with microcontroller GPIO pins via level-shifting resistors.

Use Value: Verified I_C = −0.5 A DC rating ensures reliable coil energization across temperature range without thermal runaway.

Use Scenario: Fast-rise HV pulse source for laser diode triggering, spark gap control, or time-domain reflectometry.

IC Role / Device Role / Timing Role: Switching element in avalanche-mode or saturated pulse circuits with tight timing control.

Use Value: 35 MHz f_T and sub-μs switching times (t_r/t_f = 0.2 μs) support <500 ns pulse widths with minimal overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1943	V_CEO = −230 V, I_C = −15 A, P_C = 150 W - lower voltage, higher current, larger TO-3P package	Targeted at audio amplifiers and motor drives, not HV flyback or deflection	Select only if system voltage ≤ 200 V and thermal budget allows larger footprint
BUW13A	V_CEO = −600 V, I_C = −0.5 A, but f_T = 10 MHz and t_f = 0.5 μs - slower switching, older planar process	Legacy industrial controls where speed is secondary to ruggedness and cost	Use when replacing BUW13A in existing designs; avoid if new designs require fast transitions

Compared with 2SA2142(TE16L1,NQ), 2SA1943 offers higher current but insufficient voltage margin for 400 VAC-derived rails, while BUW13A matches voltage rating but lacks the 35 MHz f_T and sub-μs switching needed for modern compact SMPS - making 2SA2142(TE16L1,NQ) optimal for space-constrained HV switching where both voltage and speed matter.

Availability

2SA2142(TE16L1,NQ) is available at Aetrix Electronics and suitable for horizontal deflection circuits, flyback converter switches, and relay drivers requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for 2SA2142(TE16L1,NQ) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global distribution and automotive-grade qualification capabilities.

The 2SA2142(TE16L1,NQ) belongs to Toshiba's high-voltage bipolar transistor product line, engineered specifically for robust switching in CRT deflection, industrial power supplies, and HV pulse generation where reliability under repetitive overvoltage stress is critical.

FAQ

What is the maximum continuous collector current rating for 2SA2142(TE16L1,NQ)?

The 2SA2142(TE16L1,NQ) has a DC collector current rating of −0.5 A at T_c = 25°C. Derating is required above this temperature: at T_c = 100°C, the maximum allowable I_C drops to approximately −0.25 A per the SOA curve. This rating assumes proper heatsinking and adherence to the transient thermal resistance profile shown in Figure 4 of the official Toshiba datasheet revision 2013-11-01. Always verify actual case temperature in-system before finalizing 2SA2142(TE16L1,NQ) usage.

Does 2SA2142(TE16L1,NQ) support RoHS compliance?

Yes, 2SA2142(TE16L1,NQ) is RoHS compliant. Per Toshiba's marking convention, an underlined Lot No. on the device body indicates [[G]]/RoHS COMPATIBLE, confirming compliance with EU Directive 2011/65/EU. The part contains no lead exemptions and meets all restricted substance thresholds. Full compliance documentation, including material declarations and test reports, is available through authorized Toshiba distributors and applies specifically to the 2SA2142(TE16L1,NQ) variant in JEITA 2-7J1A packaging.

What is the typical transition frequency (f_T) of 2SA2142(TE16L1,NQ) and how does it affect switching performance?

The 2SA2142(TE16L1,NQ) has a typical transition frequency f_T of 35 MHz at V_CE = −5 V and I_C = −50 mA. This value supports reliable operation in switching applications up to ~100 kHz with controlled rise and fall times (t_r = t_f = 0.2 μs). Higher f_T enables faster base charge removal, reducing storage time (t_stg = 2.3 μs) and minimizing switching losses in hard-switched topologies - a key advantage over slower alternatives like BUW13A when designing compact 2SA2142(TE16L1,NQ)-based converters.

Can 2SA2142(TE16L1,NQ) be used in avalanche mode?

No, the 2SA2142(TE16L1,NQ) is not rated or characterized for intentional avalanche operation. Its absolute maximum ratings define V_CEO = −600 V under specified test conditions (I_C = −10 mA, I_B = 0), and the SOA chart (Figure 5) shows only forward-biased safe operating limits - no avalanche energy curves or ruggedness data are provided. Using 2SA2142(TE16L1,NQ) in unclamped inductive switching without snubbers risks secondary breakdown. For avalanche-rated alternatives, consult Toshiba's 2SB1424 or equivalent qualified parts.

What is the thermal resistance from junction to case (r_th(j−c)) for 2SA2142(TE16L1,NQ)?

The 2SA2142(TE16L1,NQ) exhibits a pulse-width-dependent junction-to-case thermal resistance: r_th(j−c) = 0.1°C/W for 10 μs pulses, rising to 1.0°C/W under DC conditions (Figure 4). This reflects the device's TO-220AB package construction and internal die attachment. For steady-state thermal design, use the DC value (1.0°C/W) with measured case temperature to calculate worst-case junction temperature. Exceeding T_j = 150°C - the absolute maximum - will accelerate parametric drift and reduce reliability. Thermal modeling of 2SA2142(TE16L1,NQ) must account for this nonlinear r_th behavior.

2SA2142(TE16L1,NQ) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 600 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 10mA, 100mA

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 50mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 35MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PW-MOLD

2SA2142(TE16L1,NQ) FAQ

1.How can I place an order for 2SA2142(TE16L1,NQ) through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA2142(TE16L1,NQ) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA2142(TE16L1,NQ) reliable?

The price and inventory of 2SA2142(TE16L1,NQ) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA2142(TE16L1,NQ) is usually 5 days.

3.What payment methods are accepted for 2SA2142(TE16L1,NQ)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA2142(TE16L1,NQ) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA2142(TE16L1,NQ)?

2SA2142(TE16L1,NQ) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA2142(TE16L1,NQ) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA2142(TE16L1,NQ)?

For technical support, including 2SA2142(TE16L1,NQ) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA2142(TE16L1,NQ) requirements.

6.How does Aetrix verify that 2SA2142(TE16L1,NQ) is sourced from the original manufacturer or authorized distributors?

All 2SA2142(TE16L1,NQ) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA2142(TE16L1,NQ) meets industry standards.

7.What is the process for return or replacement of 2SA2142(TE16L1,NQ)?

All 2SA2142(TE16L1,NQ) units undergo pre-shipment inspection (PSI). If there is an issue with 2SA2142(TE16L1,NQ), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA2142(TE16L1,NQ) part is unused and in its original packaging.

Return procedure for 2SA2142(TE16L1,NQ):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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