onsemi 2SA2180

Overview

2SA2180 from SANYO is a PNP epitaxial planar silicon transistor rated for 50V V_CEO, 5A continuous collector current, and optimized for high-speed switching in power conversion circuits. It delivers low V_CE(sat) of −500 mV at −2.5A/−125mA drive, 130 MHz f_T, and fast switching times (t_on = 75 ns, t_f = 40 ns), making it suitable for DC-DC converter primary-side switches and motor driver stages.

For engineers reviewing the 2SA2180 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-220ML package thermal performance (20 W at T_c = 25°C), verified PNP switching gain (h_FE ≥ 50 at −3.75A), and guaranteed V_(BR)CEO = −50 V under standard test conditions.

Technical Context

The 2SA2180 employs MBIT process technology to achieve high current handling and low saturation voltage in a PNP configuration. Its design targets discrete high-current switching nodes where complementary NPN devices (e.g., 2SC5925) are used in push-pull or H-bridge topologies.

It operates with fixed-base drive requirements (IC/IB = 20 typical for saturation), supports pulse currents up to −8 A, and maintains stable h_FE across −125 mA to −3.75 A collector current range - critical for consistent gate driving in synchronous rectifier control circuits.

Key Specifications

Pinout & Package

2SA2180 is housed in a TO-220ML package - a modified TO-220 variant with an isolated metal tab and 3-pin vertical lead frame, optimized for high-power dissipation and mechanical robustness in industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Compared with 2SA1943 and MJD2955T4G, the 2SA2180 offers superior high-frequency switching performance and lower conduction loss in compact TO-220ML form - making it the preferred choice for space-constrained, efficiency-critical DC-DC and motor drive applications demanding sub-100 ns transitions.

Availability

2SA2180 is available at Aetrix Electronics and suitable for switching regulators, DC motor drivers, LED current sinks, and industrial solenoid controllers requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SA2180 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2011; its transistor product lines remain widely deployed in industrial power systems.

The 2SA2180 belongs to SANYO's high-speed PNP switching transistor family, engineered specifically for efficiency-critical power conversion stages where low saturation voltage and fast transition times are mandatory.

FAQ

What is the maximum continuous collector current rating for the 2SA2180?

The 2SA2180 has a maximum continuous collector current (I_C) rating of −5 A at case temperature T_c = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C per the PC–Tc curve in the datasheet. At ambient temperature (T_a = 25°C) with no heatsink, the usable I_C drops to approximately −2.5 A due to thermal limitations. The 2SA2180 also supports −8 A pulsed current (I_CP) for durations ≤500 µs, enabling short-term overload tolerance in motor startup or surge conditions.

Does the 2SA2180 require a heatsink in typical switching regulator applications?

Yes, the 2SA2180 typically requires a heatsink in continuous-duty switching regulator applications drawing >1.5 A. While its TO-220ML package supports 20 W dissipation at T_c = 25°C, real-world PCB layout and ambient conditions limit practical power handling. For example, at I_C = −3 A and V_CE(sat) = −400 mV, conduction loss is 1.2 W - manageable with a small 5°C/W heatsink. Without thermal management, junction temperature can exceed 150°C even at moderate loads, triggering thermal shutdown or accelerated degradation. The 2SA2180 datasheet provides detailed PC–Ta and PC–Tc derating curves to guide heatsink selection.

What is the guaranteed DC current gain (h_FE) of the 2SA2180 at high collector current?

The 2SA2180 guarantees h_FE ≥ 50 at V_CE = −2 V and I_C = −3.75 A, ensuring reliable saturation under heavy load conditions. This specification is critical for validating base drive adequacy - for example, achieving full saturation at −3.75 A requires only −75 mA of base current (I_B = I_C/50). The device also specifies h_FE ≥ 200 at lighter loads (I_C = −125 mA), supporting flexible biasing across operating ranges. These values are measured and binned per SANYO's production test flow, not typical estimates.

Can the 2SA2180 be used as a direct replacement for the 2SA1013 in existing designs?

No, the 2SA2180 is not a direct replacement for the 2SA1013. Although both are PNP transistors, the 2SA1013 is rated for −100 V V_CEO and −1.5 A I_C, while the 2SA2180 is optimized for −50 V and −5 A. Substituting the 2SA2180 into a 2SA1013-based design risks overvoltage failure in >50 V circuits, and its higher current capability may overload existing base drive circuitry if not re-verified. The 2SA2180's faster switching (t_f = 40 ns vs. ~200 ns for 2SA1013) also alters EMI profiles and snubber requirements. Any replacement must include full electrical and thermal validation of the 2SA2180 in the target application.

What is the recommended base drive configuration for reliable saturation of the 2SA2180?

For reliable saturation, the 2SA2180 requires base current (I_B) ≥ I_C/20 - e.g., −125 mA for −2.5 A collector current. A series base resistor (R_B) is mandatory to limit I_B; for a −5 V drive signal, R_B ≈ 40 Ω achieves this. Fast turn-off demands low-impedance base discharge - adding a 100–470 Ω pull-down resistor from base to emitter improves fall time. The 2SA2180 datasheet specifies a switching test circuit using a 50 Ω source and 100 µF/470 µF capacitors to validate drive integrity. Avoid open-base conditions: the 2SA2180's V_EBO = −6 V limits reverse base-emitter voltage, and exceeding it risks junction damage.