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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas 2SA673AB-E

Name: 2SA673AB-E
Brand: Renesas
SKU: 2SA673AB-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA673AB-E

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SA673AB-E.pdf

Description:: TRANS PNP 50V 0.5A TO-92

Quantity:: RFQ Add To RFQ list

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Inventory:11,675

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Product details

Overview

2SA673AB-E from Renesas Technology Corp. is a silicon PNP epitaxial transistor designed for low-frequency amplifier applications and as a complementary pair with 2SC1213/2SC1213A. It features V_CBO = –50 V, V_CEO = –50 V, I_C = –500 mA, P_C = 400 mW, and h_FE = 100–200 (Group C), housed in a TO-92 (1) package.

For engineers reviewing the 2SA673AB-E datasheet, 2SA673AB-E pinout, 2SA673AB-E application, or 2SA673AB-E equivalent, key selection criteria include breakdown voltage margin, DC current gain consistency at I_C = –10 mA and –500 mA, saturation voltage under defined drive conditions, thermal derating curve compliance, and compatibility with legacy Hitachi-designated PCB footprints.

Technical Context

The 2SA673AB-E operates as a general-purpose PNP bipolar junction transistor optimized for linear amplification in audio and signal conditioning stages. Its design emphasizes stable h_FE across collector current (10–500 mA), low V_CE(sat) (–0.2 V typ. at I_C = –150 mA / I_B = –15 mA), and guaranteed breakdown margins up to –50 V in both VCBO and VCEO configurations.

It is specified for operation from –55°C to +150°C junction temperature, with thermal derating beginning at T_A = 25°C per the maximum collector dissipation curve. The device is not radiation-hardened and is excluded from safety-critical systems where human life is at stake per manufacturer cautions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	–50 V - Ensures safe operation with up to 50 V reverse bias between collector and base without avalanche conduction
V_CEO	–50 V - Supports emitter-grounded amplifier topologies with 50 V supply headroom
I_C	–500 mA - Enables medium-current switching or Class-A/AB output stage use with adequate heatsinking
P_C	400 mW - Requires thermal management above ~60°C ambient per derating curve
h_FE	100–200 (Group C) - Provides predictable DC gain for bias network design at I_C = –10 mA
V_CE(sat)	–0.2 V (typ.) - Minimizes power loss and voltage drop in saturated switch applications
T_j max	+150°C - Sets absolute upper limit for junction temperature during transient overload

Pinout & Package

Package: TO-92 (1), 3-lead through-hole plastic package conforming to JEDEC and EIAJ standards; mass ≈ 0.25 g; lead pitch 2.54 mm; body height ≤ 4.8 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to most positive rail in PNP common-emitter configuration; defines reference for base drive polarity
2 (Collector)	Current source terminal	Typically tied to load or supply rail; carries full output current in amplifier or switch mode
3 (Base)	Control input terminal	Receives negative-going drive signal relative to emitter; requires current-limiting resistor for bias stability

Key Features

Feature	Design Value
Complementary pairing	Validated match with 2SC1213/2SC1213A for push-pull amplifier stages requiring matched NPN/PNP characteristics
h_FE grouping	Group C (100–200) ensures consistent gain binning for production-level circuit predictability
Thermal robustness	Rated for continuous operation up to +150°C junction temperature with defined derating slope
Low saturation voltage	V_CE(sat) ≤ –0.6 V (max) at I_C = –150 mA enables efficient switching in low-voltage logic interfaces

Applications

Audio Pre-amplifier Stage	DC Power Supply Regulator
Use Scenario: Low-noise voltage amplification of microphone or line-level signals in consumer audio equipment. IC Role / Device Role / Timing Role: PNP transistor configured in common-emitter topology to provide inverted, linear gain with minimal distortion. Use Value: Stable h_FE and low V_CE(sat) ensure consistent small-signal gain and reduced thermal drift over operating temperature range.	Use Scenario: Series pass element in discrete linear voltage regulators delivering up to 500 mA output current. IC Role / Device Role / Timing Role: Current-controlled series regulator transistor dissipating excess voltage as heat to maintain stable output. Use Value: 400 mW power rating and –50 V breakdown support reliable operation with 24 V input-to-output differentials.
Industrial Sensor Interface	Legacy Equipment Repair
Use Scenario: Signal conditioning front-end for analog sensors (e.g., thermistors, strain gauges) in factory automation modules. IC Role / Device Role / Timing Role: Amplifier stage converting low-level sensor outputs into robust voltage levels for ADC input. Use Value: Guaranteed V_BR and h_FE specs enable repeatable calibration and long-term stability in unattended deployments.	Use Scenario: Direct replacement for obsolete Hitachi 2SA673A units in field-repair of aging test instruments and telecom hardware. IC Role / Device Role / Timing Role: Drop-in functional replacement preserving original schematic functionality and PCB layout. Use Value: Identical TO-92 (1) footprint, pinout, and electrical specifications ensure zero redesign effort and rapid service turnaround.

Audio Pre-amplifier Stage

DC Power Supply Regulator

Use Scenario: Low-noise voltage amplification of microphone or line-level signals in consumer audio equipment.

IC Role / Device Role / Timing Role: PNP transistor configured in common-emitter topology to provide inverted, linear gain with minimal distortion.

Use Value: Stable h_FE and low V_CE(sat) ensure consistent small-signal gain and reduced thermal drift over operating temperature range.

Use Scenario: Series pass element in discrete linear voltage regulators delivering up to 500 mA output current.

IC Role / Device Role / Timing Role: Current-controlled series regulator transistor dissipating excess voltage as heat to maintain stable output.

Use Value: 400 mW power rating and –50 V breakdown support reliable operation with 24 V input-to-output differentials.

Industrial Sensor Interface

Legacy Equipment Repair

Use Scenario: Signal conditioning front-end for analog sensors (e.g., thermistors, strain gauges) in factory automation modules.

IC Role / Device Role / Timing Role: Amplifier stage converting low-level sensor outputs into robust voltage levels for ADC input.

Use Value: Guaranteed V_BR and h_FE specs enable repeatable calibration and long-term stability in unattended deployments.

Use Scenario: Direct replacement for obsolete Hitachi 2SA673A units in field-repair of aging test instruments and telecom hardware.

IC Role / Device Role / Timing Role: Drop-in functional replacement preserving original schematic functionality and PCB layout.

Use Value: Identical TO-92 (1) footprint, pinout, and electrical specifications ensure zero redesign effort and rapid service turnaround.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1015-Y	V_CBO/V_CEO = –50 V, h_FE = 120–240, P_C = 400 mW, same TO-92 package	Slightly higher h_FE spread; identical thermal and voltage ratings	Preferred when tighter h_FE tolerance is needed; otherwise functionally interchangeable
BC557B	V_CBO/V_CEO = –50 V, h_FE = 200–450, P_C = 500 mW, TO-92 package	Higher gain and power rating; different gain binning structure	Use when higher h_FE or marginally greater dissipation is required; verify base drive compatibility

Compared with 2SA673AB-E, the 2SA1015-Y offers narrower h_FE tolerance while maintaining identical voltage and thermal limits, whereas the BC557B provides higher gain and power margin but requires revalidation of bias networks due to its broader h_FE range.

Availability

2SA673AB-E is available at Aetrix Electronics and suitable for audio pre-amplifiers, discrete linear regulators, and industrial sensor interfaces requiring stable component supply and long-lifecycle support.

Supply support for 2SA673AB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of semiconductor operations from Hitachi and Mitsubishi Electric, specializing in microcontrollers, analog, power, and discrete devices.

The 2SA673AB-E belongs to Renesas' legacy discrete transistor portfolio, originally developed by Hitachi for general-purpose linear and switching applications in industrial, consumer, and communications equipment.

FAQ

What is the exact h_FE range for the 2SA673AB-E?

The 2SA673AB-E is binned as Group C, with a guaranteed DC current transfer ratio (h_FE) of 100–200 when measured at V_CE = –3 V and I_C = –10 mA. This binning ensures predictable bias point stability in production amplifier circuits and eliminates need for post-manufacture gain sorting.

Is the 2SA673AB-E pin-compatible with the original Hitachi 2SA673A?

Yes - the 2SA673AB-E maintains identical TO-92 (1) mechanical dimensions, lead assignment (E-C-B), and electrical specifications as the Hitachi 2SA673A. Renesas explicitly confirms continuity of form, fit, and function for this part number under its post-merger product stewardship.

Does the 2SA673AB-E support operation at elevated ambient temperatures?

The 2SA673AB-E is rated for storage from –55°C to +150°C and junction operation up to +150°C. Its maximum collector dissipation decreases linearly above 25°C ambient per the published derating curve, requiring thermal analysis for sustained >60°C board environments.

Can the 2SA673AB-E be used in switching applications?

Yes - the 2SA673AB-E supports switching use with V_CE(sat) ≤ –0.6 V (max) at I_C = –150 mA / I_B = –15 mA. Its f_T performance (≥50 MHz at I_C = –10 mA) allows reliable operation up to low-MHz digital frequencies, though it is not optimized for high-speed switching.

What complementary NPN transistor pairs with the 2SA673AB-E?

The 2SA673AB-E is explicitly designated as a complementary pair with the 2SC1213 and 2SC1213A NPN transistors. These share matching voltage ratings, gain ranges, and TO-92 packaging, enabling balanced push-pull amplifier designs without gain skew or thermal mismatch.

2SA673AB-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 15mA, 150mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 3V

Power - Max:: 400 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92

2SA673AB-E FAQ

1.How can I place an order for 2SA673AB-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA673AB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA673AB-E reliable?

The price and inventory of 2SA673AB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA673AB-E is usually 5 days.

3.What payment methods are accepted for 2SA673AB-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA673AB-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA673AB-E?

2SA673AB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA673AB-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA673AB-E?

For technical support, including 2SA673AB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA673AB-E requirements.

6.How does Aetrix verify that 2SA673AB-E is sourced from the original manufacturer or authorized distributors?

All 2SA673AB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA673AB-E meets industry standards.

7.What is the process for return or replacement of 2SA673AB-E?

All 2SA673AB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA673AB-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA673AB-E part is unused and in its original packaging.

Return procedure for 2SA673AB-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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