Renesas 2SA673ABTZ-E

Overview

2SA673ABTZ-E from Renesas Electronics is a silicon PNP epitaxial transistor designed for low-frequency amplifier applications and as a complementary pair with 2SC1213A. It features V_CEO = –50 V, I_C = –500 mA, P_C = 400 mW, h_FE = 60–320 (at I_C = –10 mA), and TO-92(1) package. It operates in audio preamp and driver stages where moderate power gain and thermal stability are required.

For engineers reviewing the 2SA673ABTZ-E datasheet, 2SA673ABTZ-E pinout, 2SA673ABTZ-E application, or 2SA673ABTZ-E equivalent, key selection criteria include its guaranteed h_FE grouping (B/C/D), V_CEO/V_CBO rating, saturation voltage under defined drive conditions, and compatibility with complementary NPN devices in push-pull configurations.

Technical Context

The 2SA673ABTZ-E is a discrete PNP bipolar junction transistor optimized for linear amplification in the audio and general-purpose low-frequency domain. Its design emphasizes stable DC current gain across collector currents from –10 mA to –500 mA, with specified V_CE(sat) ≤ –0.6 V at I_C = –150 mA and I_B = –15 mA, and low leakage (I_CBO ≤ –0.5 μA).

It is explicitly grouped by h_FE range (B: 60–120, C: 100–200, D: 160–320), enabling matched-pair selection when paired with 2SC1213A. The device shares identical absolute maximum ratings and thermal derating curve with the 2SA673A family, supporting consistent board-level thermal design.

Key Specifications

Pinout & Package

2SA673ABTZ-E is housed in a TO-92(1) plastic package (RENESAS code PRSS0003DA-A, JEITA SC-43A), with lead spacing of 2.54 mm and typical mass of 0.25 g. The package is radial-leaded, taping-compatible, and rated for standard industrial ambient conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-frequency amplifier applications.

Compared with 2SA673ABTZ-E, 2SA1015GR offers higher gain consistency but insufficient current capacity for driver roles, while MPSA92 provides superior voltage ruggedness at the cost of predictable small-signal gain-making 2SA673ABTZ-E optimal for balanced low-frequency amplification requiring both current drive and matched gain.

Availability

2SA673ABTZ-E is available at Aetrix Electronics and suitable for audio preamplifiers, DC motor drivers, complementary push-pull outputs, and linear voltage regulator pass elements requiring stable component supply and consistent h_FE binning.

Supply support for 2SA673ABTZ-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and discrete power devices, with global R&D and manufacturing infrastructure.

The 2SA673A series belongs to Renesas' legacy discrete transistor portfolio targeting general-purpose linear amplification and complementary switching applications in industrial and consumer electronics.

FAQ

What is the h_FE range for the 2SA673ABTZ-E, and how is it binned?

The 2SA673ABTZ-E has a DC current transfer ratio (h_FE) ranging from 60 to 320 at V_CE = –3 V and I_C = –10 mA. It is factory-binned into three gain groups: B (60–120), C (100–200), and D (160–320). The "B" suffix in 2SA673ABTZ-E confirms it belongs to the 60–120 h_FE group. This binning allows designers to select matched pairs for differential or push-pull circuits without post-manufacturing testing.

Is the 2SA673ABTZ-E pin-compatible with other TO-92 PNP transistors like the 2N3906?

No, the 2SA673ABTZ-E uses the TO-92(1) outline with pin order Emitter–Collector–Base (pin 1–2–3), whereas the 2N3906 follows Emitter–Base–Collector (pin 1–2–3). Swapping them without PCB modification will cause circuit failure. Always verify pinout using the official Renesas datasheet R07DS0429EJ0300 before substitution. The 2SA673ABTZ-E pinout is fixed and non-interchangeable with generic TO-92 footprints unless layout matches PRSS0003DA-A.

What is the maximum safe operating collector current for the 2SA673ABTZ-E at 75°C ambient?

At T_a = 75°C, the 2SA673ABTZ-E's maximum collector current is limited by thermal derating. With P_C = 400 mW at 25°C and linear derating above 25°C (per the "Maximum Collector Dissipation Curve" on page 3), allowable power drops to ~280 mW at 75°C. Using V_CE ≈ –5 V and h_FE ≥ 60, the practical I_C limit remains –500 mA only if V_CE is kept low (≤ –0.6 V); otherwise, sustained operation above –300 mA requires heatsinking or reduced duty cycle.

Can the 2SA673ABTZ-E be used as a direct replacement for the 2SA673BTZ-E?

Yes-the 2SA673ABTZ-E and 2SA673BTZ-E share identical absolute maximum ratings, electrical characteristics, package, and pinout. The "A" denotes the 2SA673A variant (V_CEO = –50 V), while "B" indicates the h_FE group (60–120). Both are manufactured under the same process and qualify as functionally identical within their respective gain bins. No PCB or schematic changes are needed when substituting between same-suffix variants (e.g., ABTZ-E ↔ ACTZ-E) within the 2SA673A family.

Does the 2SA673ABTZ-E meet RoHS compliance, and what is its lead finish?

Yes, the 2SA673ABTZ-E complies with the EU RoHS Directive, as confirmed by Renesas' environmental documentation. It features a matte tin (Sn) lead finish applied over copper leads, ensuring solderability and halogen-free compatibility. The device is classified as "Standard" quality grade per Renesas' internal classification, intended for office equipment, audio appliances, and industrial robots-not for automotive, medical life-support, or aerospace applications.