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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas 2SA673AC-E

Name: 2SA673AC-E
Brand: Renesas
SKU: 2SA673AC-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA673AC-E

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: 2SA673AC-E.pdf

Description:: TRANS PNP 50V 0.5A TO-92

Quantity:: RFQ Add To RFQ list

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Inventory:7,500

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Product details

Overview

2SA673AC-E from Renesas Technology Corp. is a silicon PNP epitaxial transistor designed for low-frequency amplifier applications and complementary pairing with 2SC1213/2SC1213A. It features V_CEO = –50 V, I_C = –500 mA, P_C = 400 mW, h_FE = 100–200 (Group C), and TO-92 package. Used in audio preamplifier stages and discrete power control circuits.

For engineers reviewing the 2SA673AC-E datasheet, 2SA673AC-E pinout, 2SA673AC-E application, or 2SA673AC-E equivalent, key selection criteria include guaranteed h_FE binning (C-grade), V_CEO/V_CBO rating compliance, thermal derating above 25°C, and complementary NPN pairing compatibility with Hitachi/Renesas 2SC1213 series devices.

Technical Context

This PNP bipolar junction transistor operates in linear amplification mode with fixed-emitter biasing configurations. Its h_FE range of 100–200 at I_C = –10 mA and V_CE = –3 V supports stable small-signal gain, while V_CE(sat) ≤ –0.6 V at I_C = –150 mA/I_B = –15 mA enables efficient switching in low-speed driver circuits.

The device follows JEDEC TO-92 (1) mechanical standard with 0.25 g mass and thermal resistance R_θJA ≈ 312.5°C/W (calculated from P_C = 400 mW and ΔT = 125°C). Junction temperature is rated to 150°C, requiring heatsinking or ambient derating above 75°C per the maximum dissipation curve.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–50 V: Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in common-emitter amplifier topologies.
I_C	–500 mA: Continuous DC collector current limit; sets upper bound for load drive capability in Class-A amplifier stages.
P_C	400 mW: Total package power dissipation at T_A = 25°C; requires thermal design margin for operation above ambient.
h_FE	100–200 (Group C): DC current gain binning confirmed per datasheet table; ensures predictable base drive requirements.
V_CE(sat)	≤ –0.6 V at I_C = –150 mA/I_B = –15 mA: Saturation voltage defines conduction loss in switching applications.
f_T	≥ 100 MHz at I_C = –100 mA/V_CE = –3 V: Gain-bandwidth product confirms usability up to low-VHF frequencies.

Pinout & Package

Package: TO-92 (1), JEDEC-compliant, 3-lead through-hole plastic package with 0.25 g mass and 4.8 mm × 3.8 mm × 5.0 mm dimensions.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Connected to most positive rail in PNP common-emitter configuration; polarity must be observed to avoid reverse-bias damage.
2 (Collector)	Current source terminal	Typically tied to load and supply return path; voltage swing limited by V_CEO rating.
3 (Base)	Control input	Receives forward-biased current to enable conduction; requires current-limiting resistor to prevent overdrive.

Key Features

Feature	Design Value
Complementary pairing	Validated match with 2SC1213/2SC1213A NPN transistors for push-pull amplifier designs.
h_FE binning	Group C (100–200) ensures consistent gain across production lots without manual sorting.
Thermal stability	Junction temperature rating of 150°C supports operation in enclosed industrial enclosures with limited airflow.
Low V_CE(sat)	–0.2 V typical saturation voltage reduces power loss in linear regulator pass elements.

Applications

Audio Preamp Stage	Discrete Power Switch
Use Scenario: Low-noise voltage amplification in microphone preamplifier circuits with single-supply rails. IC Role / Device Role / Timing Role: PNP small-signal amplifier providing 20–30 dB gain with minimal harmonic distortion. Use Value: Group C h_FE binning ensures repeatable gain matching across channels in stereo systems.	Use Scenario: On/off control of 12 V relay coils or LED arrays in industrial control panels. IC Role / Device Role / Timing Role: Medium-current PNP switch driven by microcontroller GPIO with inverted logic. Use Value: V_CEO = –50 V accommodates inductive kickback without snubber circuitry.
Complementary Push-Pull Output	Linear Voltage Regulator Pass Element
Use Scenario: Output stage in Class-B audio amplifiers paired with 2SC1213A NPN transistor. IC Role / Device Role / Timing Role: Sourcing current during positive half-cycle of output waveform. Use Value: Matched thermal characteristics with complementary NPN enable symmetrical crossover behavior.	Use Scenario: Pass transistor in adjustable 3-terminal linear regulators delivering up to 400 mW. IC Role / Device Role / Timing Role: Series pass element regulating output voltage via base current control. Use Value: Low V_CE(sat) minimizes dropout voltage and improves efficiency at full load.

Audio Preamp Stage

Discrete Power Switch

Use Scenario: Low-noise voltage amplification in microphone preamplifier circuits with single-supply rails.

IC Role / Device Role / Timing Role: PNP small-signal amplifier providing 20–30 dB gain with minimal harmonic distortion.

Use Value: Group C h_FE binning ensures repeatable gain matching across channels in stereo systems.

Use Scenario: On/off control of 12 V relay coils or LED arrays in industrial control panels.

IC Role / Device Role / Timing Role: Medium-current PNP switch driven by microcontroller GPIO with inverted logic.

Use Value: V_CEO = –50 V accommodates inductive kickback without snubber circuitry.

Complementary Push-Pull Output

Linear Voltage Regulator Pass Element

Use Scenario: Output stage in Class-B audio amplifiers paired with 2SC1213A NPN transistor.

IC Role / Device Role / Timing Role: Sourcing current during positive half-cycle of output waveform.

Use Value: Matched thermal characteristics with complementary NPN enable symmetrical crossover behavior.

Use Scenario: Pass transistor in adjustable 3-terminal linear regulators delivering up to 400 mW.

IC Role / Device Role / Timing Role: Series pass element regulating output voltage via base current control.

Use Value: Low V_CE(sat) minimizes dropout voltage and improves efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1015Y	V_CEO = –50 V, h_FE = 120–240, same TO-92 package	Higher h_FE spread; less tightly binned than 2SA673AC-E Group C	Acceptable where precise gain matching is not required; verify base drive margin.
BC557B	V_CEO = –45 V, I_C = –100 mA, h_FE = 200–450, TO-92	Lower current/power rating; unsuitable for >200 mA loads	Only for signal-level use; not a drop-in replacement for power-stage roles.

Compared with 2SA673AC-E, 2SA1015Y offers broader h_FE tolerance but identical voltage/current ratings, while BC557B provides higher gain at significantly reduced power handling-making both alternatives suitable only when design margins allow relaxation of current or gain consistency requirements.

Availability

2SA673AC-E is available at Aetrix Electronics and suitable for audio preamplifiers, discrete power switches, and complementary push-pull output stages requiring stable component supply and consistent h_FE binning.

Supply support for 2SA673AC-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 from the merger of Mitsubishi Electric and Hitachi's semiconductor operations, specializing in microcontrollers, analog, and discrete devices.

The 2SA673AC-E belongs to Renesas' legacy discrete transistor product line, originally developed by Hitachi for general-purpose linear and switching applications in consumer and industrial electronics.

FAQ

What is the h_FE range specified for 2SA673AC-E?

The 2SA673AC-E is binned as Group C with a guaranteed DC current transfer ratio (h_FE) of 100–200 at V_CE = –3 V and I_C = –10 mA. This binning is explicitly defined in the Hitachi/Renesas datasheet and distinguishes it from the broader 2SA673A specification. The 2SA673AC-E maintains this h_FE range across its qualified operating temperature range.

Is 2SA673AC-E pin-compatible with 2SA673A?

Yes, the 2SA673AC-E shares identical TO-92 (1) package dimensions, lead assignment (E-C-B), and mechanical footprint with 2SA673A. Both comply with JEDEC and EIAJ standards. However, 2SA673AC-E is a subset of 2SA673A with tighter h_FE binning (Group C), so electrical substitution is valid only when the design relies on that specific gain range.

Can 2SA673AC-E be used as a direct replacement for 2SA673 in existing designs?

No-2SA673AC-E is not a direct replacement for the base 2SA673, which has V_CEO = –35 V and h_FE = 60–120 (Group B). The 2SA673AC-E matches 2SA673A specifications (–50 V, Group C), so substituting it into a 2SA673-design risks overvoltage stress on adjacent components if the original layout assumed lower breakdown margins.

What is the maximum allowable collector power dissipation for 2SA673AC-E at 75°C ambient?

Per the Maximum Collector Dissipation Curve in the datasheet, the 2SA673AC-E derates linearly from 400 mW at 25°C to approximately 240 mW at 75°C ambient. This reflects a thermal resistance of ~312.5°C/W and requires PCB copper area or airflow consideration when operating near full-rated current at elevated temperatures.

Does 2SA673AC-E have official automotive qualification?

No, the 2SA673AC-E is not AEC-Q101 qualified. Renesas documentation explicitly states these transistors are not designed for safety-critical applications including automotive, medical, or aerospace systems. For such uses, consult Renesas' automotive-grade discrete portfolio or contact their sales office for qualified alternatives to 2SA673AC-E.

2SA673AC-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 15mA, 150mA

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 3V

Power - Max:: 400 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92

2SA673AC-E FAQ

1.How can I place an order for 2SA673AC-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA673AC-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA673AC-E reliable?

The price and inventory of 2SA673AC-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA673AC-E is usually 5 days.

3.What payment methods are accepted for 2SA673AC-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA673AC-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA673AC-E?

2SA673AC-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA673AC-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA673AC-E?

For technical support, including 2SA673AC-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA673AC-E requirements.

6.How does Aetrix verify that 2SA673AC-E is sourced from the original manufacturer or authorized distributors?

All 2SA673AC-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA673AC-E meets industry standards.

7.What is the process for return or replacement of 2SA673AC-E?

All 2SA673AC-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SA673AC-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA673AC-E part is unused and in its original packaging.

Return procedure for 2SA673AC-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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