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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1122S-TD-E

Name: 2SB1122S-TD-E
Brand: onsemi
SKU: 2SB1122S-TD-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1122S-TD-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SB1122S-TD-E.pdf

Description:: TRANS PNP 50V 1A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1122S-TD-E from onsemi is a low-saturation-voltage PNP bipolar junction transistor rated for –50 V V_CEO, –1 A I_C, and 1.3 W power dissipation on ceramic substrate, optimized for relay and lamp driver circuits in industrial control modules.

For engineers reviewing the 2SB1122S-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE range (140–280 at I_C = –100 mA), V_CE(sat) ≤ –500 mV at I_C = –500 mA/I_B = –50 mA, and SC-62 (PCP) package thermal performance.

Technical Context

This device uses onsemi's FBET (Flat Base Epitaxial Transistor) process to achieve low V_CE(sat) and high f_T (150 MHz), enabling fast switching in DC-DC converter output stages and solid-state relay interfaces.

It operates with guaranteed DC current gain across temperature (h_FE specified at T_a = –25°C, 25°C, and 75°C), and features low Cob (12 pF at V_CB = –10 V) for reduced capacitive loading in high-speed switching nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–50 V - supports operation in 24 V and 48 V industrial bus systems with margin against transients
I_C	–1 A continuous - drives medium-power loads such as 12 V/500 mA relays or LED arrays without heatsink
V_CE(sat)	–180 to –500 mV @ I_C = –500 mA/I_B = –50 mA - minimizes conduction loss and self-heating in linear and saturated switch modes
h_FE	140–280 @ V_CE = –2 V, I_C = –100 mA - ensures stable base drive design for predictable turn-on behavior
f_T	150 MHz - enables use in PWM frequencies up to ~10 MHz with acceptable gain roll-off
C_ob	12 pF @ V_CB = –10 V, f = 1 MHz - limits Miller effect in high-side switching configurations

Pinout & Package

2SB1122S-TD-E is housed in the PCP (SC-62 / SOT-89 / TO-243) surface-mount package, featuring a thermally enhanced leadframe and exposed collector tab for improved heat transfer when mounted on ceramic substrates.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring ~50 mA base current to saturate at 500 mA collector load
2	Collector	Main current path terminal; electrically connected to exposed metal tab for thermal and electrical grounding
3	Emitter	Common reference node; tied to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
FBET process technology	Enables tight h_FE distribution and low V_CE(sat) without epitaxial layer compromises
Ultrasmall PCP footprint	2.5 mm × 4.0 mm × 1.6 mm body allows >2× density vs. TO-92 in hybrid IC assemblies
Guaranteed h_FE rank "S"	140–280 range simplifies base resistor selection and eliminates binning in production
Low storage time (t_stg)	300 ns enables clean turn-off in 10–100 kHz PWM applications without snubbers

Applications

Industrial Relay Drivers	Lamp & LED Load Switching
Use Scenario: Driving 24 V DC electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base drive. IC Role / Device Role / Timing Role: High-current PNP switch providing inverted logic-level interface and load isolation. Use Value: Low V_CE(sat) reduces coil voltage drop and improves relay pull-in margin under low-input-voltage conditions.	Use Scenario: Switching 12 V automotive LED clusters in dashboard backlighting and indicator circuits. IC Role / Device Role / Timing Role: Medium-power constant-current sink or high-side switch in analog dimming paths. Use Value: Fast t_on/t_f (40 ns / 30 ns) supports PWM dimming up to 5 kHz without visible flicker.
Voltage Regulator Pass Element	Hybrid Power IC Integration
Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 800 mA at <1 V dropout. IC Role / Device Role / Timing Role: Linear-mode current amplifier controlling output voltage via feedback loop. Use Value: Stable h_FE over temperature ensures consistent regulation accuracy across –25°C to +75°C ambient.	Use Scenario: Embedded switching element in multilayer ceramic hybrid ICs for motor driver front-ends. IC Role / Device Role / Timing Role: Discrete active component integrated into thick-film substrate with passive networks. Use Value: Ultrasmall PCP package enables >30% area reduction versus SOT-23 equivalents in space-constrained hybrid layouts.

Industrial Relay Drivers

Lamp & LED Load Switching

Use Scenario: Driving 24 V DC electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base drive.

IC Role / Device Role / Timing Role: High-current PNP switch providing inverted logic-level interface and load isolation.

Use Value: Low V_CE(sat) reduces coil voltage drop and improves relay pull-in margin under low-input-voltage conditions.

Use Scenario: Switching 12 V automotive LED clusters in dashboard backlighting and indicator circuits.

IC Role / Device Role / Timing Role: Medium-power constant-current sink or high-side switch in analog dimming paths.

Use Value: Fast t_on/t_f (40 ns / 30 ns) supports PWM dimming up to 5 kHz without visible flicker.

Voltage Regulator Pass Element

Hybrid Power IC Integration

Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 800 mA at <1 V dropout.

IC Role / Device Role / Timing Role: Linear-mode current amplifier controlling output voltage via feedback loop.

Use Value: Stable h_FE over temperature ensures consistent regulation accuracy across –25°C to +75°C ambient.

Use Scenario: Embedded switching element in multilayer ceramic hybrid ICs for motor driver front-ends.

IC Role / Device Role / Timing Role: Discrete active component integrated into thick-film substrate with passive networks.

Use Value: Ultrasmall PCP package enables >30% area reduction versus SOT-23 equivalents in space-constrained hybrid layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1218S-TL-E	V_CEO = –60 V, I_C = –1.5 A, h_FE = 120–240, same PCP package	Higher voltage rating suits 48 V telecom systems; higher I_C supports larger relays	Select when V_CEO margin >10 V or peak load exceeds 1 A is required
MMBT2907ALT1G	V_CEO = –60 V, I_C = –600 mA, h_FE = 100–300, SOT-23 package	Lower current rating and smaller package limit thermal capacity; not suitable for 1 A continuous loads	Use only in low-power signal switching where board space is critical and I_C ≤ 500 mA

Compared with 2SB1122S-TD-E, 2SB1218S-TL-E offers higher voltage and current headroom in identical PCP packaging, while MMBT2907ALT1G trades thermal capability for miniaturization-neither is pin-compatible, but both serve adjacent PNP switching roles with distinct layout and derating implications.

Availability

2SB1122S-TD-E is available at Aetrix Electronics and suitable for industrial relay drivers, lamp/LED load switching, and voltage regulator pass elements requiring stable component supply and Pb-free compliance.

Supply support for 2SB1122S-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.

The 2SB1122 series belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, medium-power switching and amplification tasks in industrial control and power management subsystems.

FAQ

What is the guaranteed h_FE range for 2SB1122S-TD-E?

The 2SB1122S-TD-E is binned to Rank "S", guaranteeing a DC current gain (h_FE) of 140 to 280 when measured at V_CE = –2 V and I_C = –100 mA. This range is tighter than the broader "T" grade (200–400) and simplifies base resistor design for consistent saturation across production lots. The 2SB1122S-TD-E datasheet confirms this specification under Electrical Characteristics at T_a = 25°C.

Does 2SB1122S-TD-E support Pb-free assembly processes?

Yes, 2SB1122S-TD-E is Pb-free and RoHS-compliant, as explicitly stated in the ordering information section of its official datasheet (Ordering Number EN2040C). The "-E" suffix denotes Pb-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard reflow profiles. This makes the 2SB1122S-TD-E suitable for lead-free manufacturing without special handling.

What is the maximum power dissipation for 2SB1122S-TD-E under real-world conditions?

The 2SB1122S-TD-E has a rated collector dissipation (P_C) of 1.3 W when mounted on a 250 mm² × 0.8 mm ceramic substrate-this is the validated thermal condition cited in the datasheet. Without forced cooling or substrate enhancement, derating begins above T_a = 25°C per the PC–T_a curve (ITR08890), reaching ~0.6 W at 75°C ambient. The 2SB1122S-TD-E must not exceed this derated limit to maintain reliability.

Can 2SB1122S-TD-E be used in linear regulator applications?

Yes, the 2SB1122S-TD-E is suitable for linear regulator pass transistor applications due to its stable h_FE over temperature, low V_CE(sat), and controlled thermal resistance on ceramic substrates. Its –50 V V_CEO rating supports input-to-output differentials up to ~40 V, and its 1.3 W P_C allows ~800 mA output at 1 V dropout. The 2SB1122S-TD-E datasheet includes SOA curves confirming safe operation in DC and short-pulse linear modes.

What does the "TD" in 2SB1122S-TD-E indicate?

The "TD" in 2SB1122S-TD-E refers to the packing type: 1,000 pieces per reel, tape-and-reel format compliant with EIA-481 standards. It is not a package variant or performance grade-it specifies logistics configuration only. Both 2SB1122S-TD-E and 2SB1122T-TD-E share identical PCP packaging and electrical specs; only their h_FE bins differ. This detail is confirmed in the Ordering Information table of the 2SB1122S-TD-E datasheet.

2SB1122S-TD-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 50mA, 500mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 100mA, 2V

Power - Max:: 500 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SB1122S-TD-E FAQ

1.How can I place an order for 2SB1122S-TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1122S-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1122S-TD-E reliable?

The price and inventory of 2SB1122S-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1122S-TD-E is usually 5 days.

3.What payment methods are accepted for 2SB1122S-TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1122S-TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1122S-TD-E?

2SB1122S-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1122S-TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1122S-TD-E?

For technical support, including 2SB1122S-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1122S-TD-E requirements.

6.How does Aetrix verify that 2SB1122S-TD-E is sourced from the original manufacturer or authorized distributors?

All 2SB1122S-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1122S-TD-E meets industry standards.

7.What is the process for return or replacement of 2SB1122S-TD-E?

All 2SB1122S-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1122S-TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1122S-TD-E part is unused and in its original packaging.

Return procedure for 2SB1122S-TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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