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onsemi 2SB1122T-TD-E
- Part No.:
- 2SB1122T-TD-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
2SB1122T-TD-E.pdf
- Description:
- TRANS PNP 50V 1A PCP
- Quantity:
- Payment:
- Shipping:
Inventory:2,814
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Product details
Overview
2SB1122T-TD-E from onsemi is a PNP bipolar junction transistor (BJT) designed for medium-power switching applications, featuring –50 V VCEO, –1 A IC, low –180 mV typical VCE(sat) at –500 mA/–50 mA drive, and 150 MHz fT. It is used in relay drivers, lamp drivers, and voltage regulators where compact size and reliable saturation performance are critical.
For engineers reviewing the 2SB1122T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) at high current, hFE rank T (200–400), PCP package thermal performance on ceramic substrate, and SC-62 mechanical compatibility in space-constrained PCB layouts.
Technical Context
This device employs onsemi's FBET (Flat Base Epitaxial Transistor) process to achieve tight hFE distribution and low saturation voltage. Its –50 V VCEO and –60 V VCBO support operation in industrial DC control rails up to –48 V.
The 150 MHz fT and 30 ns fall time enable use in medium-speed switching (e.g., <100 kHz PWM), while the 12 pF Cob at –10 V supports stable turn-off behavior in inductive load circuits with minimal snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –50 V - Supports operation in –48 V telecom and industrial power rails with margin |
| IC | –1 A continuous - Handles relay coils, LED arrays, and solenoid loads without derating on ceramic substrate |
| VCE(sat) | –180 mV typ. at IC = –500 mA, IB = –50 mA - Minimizes conduction loss and self-heating in saturated-switch mode |
| hFE | 200–400 (Rank T) - Ensures consistent base drive requirements across production lots for predictable gate/relay driver design |
| fT | 150 MHz - Enables clean switching transitions up to ~100 kHz with controlled rise/fall times |
| PC | 1.3 W on 250 mm² × 0.8 mm ceramic - Delivers >2× power handling vs. standard FR-4, reducing need for heatsinks |
| Cob | 12 pF at VCB = –10 V - Limits Miller effect during turn-off, improving noise immunity in mixed-signal environments |
Pinout & Package
2SB1122T-TD-E is housed in the PCP (Plastic Chip Package) outline, standardized as JEITA SC-62 / JEDEC SOT-89 / TO-243. The package features a thermally enhanced tab (pin 2) and is optimized for surface-mount assembly on ceramic substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input requiring –50 mA drive for full saturation; low VBE(sat) (–0.9 to –1.2 V) simplifies level-shifting |
| 2 | Collector | High-current output node connected to tab - must be routed to ground plane or thermal pad for 1.3 W dissipation |
| 3 | Emitter | Common emitter reference; tied to system negative rail - enables high-side switch configuration when used with NPN complement |
Key Features
| Feature | Design Value |
|---|---|
| FBET process technology | Enables tight hFE binning (Rank T: 200–400) and repeatable VCE(sat), reducing base resistor tolerance sensitivity |
| Ultrasmall PCP package | 2.2 mm × 3.7 mm footprint with 1.0 mm height - fits high-density hybrid ICs and space-limited control modules |
| Low VCE(sat) | –180 mV typical at IC/IB = 10 - cuts conduction loss by >40% vs. legacy PNP transistors in same package |
| Thermal capability | 1.3 W PC on ceramic substrate - allows direct mounting without external heatsink in 1 A switching applications |
Applications
| Relay Driver Circuits | Lamp & LED Load Control |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and industrial controllers. IC Role / Device Role / Timing Role: PNP switch sinking relay coil current to ground, activated by microcontroller GPIO. Use Value: Low VCE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in even at low supply voltages. | Use Scenario: Switching incandescent lamps or high-brightness LED strings in automotive interior lighting and signage. IC Role / Device Role / Timing Role: High-current saturated switch controlling load current path from battery rail to ground. Use Value: 1 A rating and 150 MHz fT support PWM dimming up to 100 kHz with fast, low-loss transitions. |
| Voltage Regulator Pass Element | Industrial DC Power Distribution |
Use Scenario: Series pass transistor in linear regulators supplying analog sensors or precision DACs. IC Role / Device Role / Timing Role: Adjustable current source operating in active region, regulated by feedback network. Use Value: Tight hFE binning ensures stable loop gain and predictable thermal drift across production units. | Use Scenario: Local power switching for isolated subsystems in factory automation equipment. IC Role / Device Role / Timing Role: Medium-speed ON/OFF controller for 24–48 V DC distribution branches. Use Value: 30 ns fall time and low Cob prevent shoot-through and EMI in multi-channel distributed systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP medium-power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB1218T-TD-E | VCEO = –60 V, IC = –1.5 A, VCE(sat) = –200 mV typ., same PCP package | Higher voltage/current headroom; slightly higher saturation loss | Select when operating above –48 V rails or driving >1 A loads |
| MJD2955T4G | VCEO = –60 V, IC = –10 A, VCE(sat) = –1.8 V min. at –5 A, TO-220 package | Higher power, larger footprint, slower switching (fT = 3 MHz) | Select only when thermal mass and PCB area permit TO-220; not suitable for high-density layouts |
Compared with 2SB1122T-TD-E, 2SB1218T-TD-E offers extended voltage margin and current capacity in identical PCP packaging, while MJD2955T4G trades compactness and speed for raw power handling - making the 2SB1122T-TD-E optimal for space- and efficiency-critical 1 A switching where <100 kHz operation is required.
Availability
2SB1122T-TD-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, and voltage regulators requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for 2SB1122T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.
The 2SB1122 series belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable medium-power switching in cost-sensitive industrial controls and power management systems.
FAQ
What is the hFE range for 2SB1122T-TD-E?
The 2SB1122T-TD-E is binned to Rank T, with DC current gain (hFE) specified from 200 to 400 at VCE = –2 V and IC = –100 mA. This tighter distribution than Rank S (140–280) improves predictability of base drive requirements in production designs using the 2SB1122T-TD-E.
Is 2SB1122T-TD-E RoHS compliant and lead-free?
Yes, the 2SB1122T-TD-E is marked "Pb Free" in its ordering information and complies with RoHS Directive 2011/65/EU. The "E" suffix in the part number explicitly denotes lead-free finish, and the device uses matte tin plating on the PCP package terminals per onsemi's standard environmental compliance policy for the 2SB1122T-TD-E.
What is the maximum power dissipation for 2SB1122T-TD-E?
The 2SB1122T-TD-E has a maximum collector dissipation (PC) of 1.3 W when mounted on a 250 mm² × 0.8 mm ceramic substrate. On standard FR-4 PCBs without thermal enhancement, derating is required - consult the PC vs. Ta curve (ITR08890) for ambient temperature limits before final layout of the 2SB1122T-TD-E.
How does the PCP package of 2SB1122T-TD-E compare to SOT-89?
The PCP package used for the 2SB1122T-TD-E is identical to JEDEC SOT-89 and JEITA SC-62 in outline, land pattern, and thermal pad configuration. It is fully compatible with standard SOT-89 footprints and reflow profiles, enabling drop-in replacement in existing SOT-89 designs using the 2SB1122T-TD-E.
What is the recommended test condition for VCE(sat) of 2SB1122T-TD-E?
The guaranteed VCE(sat) for the 2SB1122T-TD-E is measured under the condition IC = –500 mA and IB = –50 mA (i.e., IC/IB = 10), at Ta = 25°C. This reflects practical saturated-switch operation and is documented in the Electrical Characteristics table on page 2 of the official 2SB1122T-TD-E datasheet.
2SB1122T-TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 100mA, 2V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PCP
2SB1122T-TD-E FAQ
1.How can I place an order for 2SB1122T-TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1122T-TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1122T-TD-E reliable?
The price and inventory of 2SB1122T-TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1122T-TD-E is usually 5 days.
3.What payment methods are accepted for 2SB1122T-TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1122T-TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1122T-TD-E?
2SB1122T-TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1122T-TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1122T-TD-E?
For technical support, including 2SB1122T-TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1122T-TD-E requirements.
6.How does Aetrix verify that 2SB1122T-TD-E is sourced from the original manufacturer or authorized distributors?
All 2SB1122T-TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1122T-TD-E meets industry standards.
7.What is the process for return or replacement of 2SB1122T-TD-E?
All 2SB1122T-TD-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1122T-TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1122T-TD-E part is unused and in its original packaging.
Return procedure for 2SB1122T-TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SB1122T-TD-E Tags
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