Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2SB1123T-TD-EX

Part No.:
2SB1123T-TD-EX
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
Aetrix2SB1123T-TD-EX.pdf
Description:
TRANS PNP 50V 2A PCP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:114,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2SB1123T-TD-EX from onsemi is a PNP bipolar junction transistor rated for –50 V VCEO, –2 A IC, and low –0.3 V typical VCE(sat) at –1 A/–50 mA drive, fabricated using FBET/MBIT processes and housed in the PCP (SC-62/SOT-89) package. It serves as a high-current switching element in voltage regulators, relay drivers, and lamp drivers where compact size and thermal efficiency are critical.

For engineers reviewing the 2SB1123T-TD-EX datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, terminal mapping, real-world use cases, and validated alternative parts - all aligned to the official EN1727F datasheet and ON Semiconductor's PCP packaging standard.

Technical Context

This PNP transistor operates with a guaranteed hFE range of 200–400 (Rank T), supports fast switching with ton = 60 ns and tf = 30 ns, and maintains stable gain up to 150 MHz fT at –10 V VCE and –50 mA IC. Its low VCE(sat) and wide ASO enable robust performance in pulsed-load applications.

The device is optimized for mounting on ceramic substrates (250 mm² × 0.8 mm), delivering 1.3 W PC dissipation under those conditions, while its –55°C to +150°C Tstg and 150°C Tj ratings support industrial ambient operation without derating below 25°C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO–50 V: Maximum safe collector-emitter reverse bias before breakdown in common-emitter configuration.
IC–2 A: Continuous DC collector current handling capability at 25°C ambient with proper heatsinking.
VCE(sat)–0.3 V (typ) at –1 A/–50 mA: Low saturation voltage reduces conduction loss and heat generation in switching mode.
hFE200–400 (Rank T): Guaranteed DC current gain range ensures predictable base drive requirements across production lots.
fT150 MHz: Gain-bandwidth product confirms suitability for medium-speed switching up to ~10–20 MHz practical operation.
ton/tf60 ns / 30 ns: Fast turn-on and fall times support efficient PWM control in power management circuits.
PC (ceramic)1.3 W: Power dissipation capacity when mounted on specified 250 mm² × 0.8 mm ceramic substrate.

Pinout & Package

2SB1123T-TD-EX uses the PCP package (JEITA SC-62 / JEDEC SOT-89), a surface-mount, 3-terminal ultraminiature plastic case with exposed collector tab for thermal conduction. Dimensions: 4.5 mm × 2.5 mm × 1.6 mm (L×W×H), mass 0.058 g.

Pin/Terminal Circuit Role Design Meaning
1BaseControl electrode; requires –50 mA typical drive current to saturate at –1 A collector load.
2CollectorMain current output terminal; electrically connected to exposed metal tab for thermal and electrical grounding.
3EmitterCurrent return path; tied to system ground or negative rail in high-side switch configurations.

Key Features

Feature Design Value
Low VCE(sat)–0.3 V typ at –1 A enables <150 mW conduction loss per switch, reducing thermal stress in dense layouts.
Wide ASORobust secondary breakdown margin allows reliable operation under inductive load transients without snubbers.
Fast switching60 ns ton and 30 ns tf support >1 MHz PWM frequencies in DC-DC and motor control stages.
Ultraminiature PCPSOT-89 footprint saves >40% board area vs. TO-92, enabling higher-density hybrid IC integration.
FBET/MBIT processEnables tight hFE distribution (Rank T: 200–400) and consistent VBE(sat) (–0.9 to –1.2 V) across temperature.

Applications

Voltage Regulator Output Stage Relay Driver Circuit

Use Scenario: Linear pass transistor in adjustable positive-voltage regulators delivering up to 1.5 A load current.

IC Role / Device Role / Timing Role: PNP pass element controlling output voltage via emitter-follower configuration with feedback loop compensation.

Use Value: Low VCE(sat) minimizes dropout voltage and improves efficiency at full load; Rank T hFE ensures stable regulation across line/load variations.

Use Scenario: High-current driver for 12 V/24 V electromagnetic relays with coil resistance ≤ 100 Ω.

IC Role / Device Role / Timing Role: Single-stage saturated switch interfacing microcontroller GPIO to relay coil, with flyback diode integrated externally.

Use Value: –2 A IC rating handles relay inrush currents; fast tf prevents contact chatter during deactivation.

Lamp Driver for Automotive Lighting Industrial Control Signal Amplifier

Use Scenario: On/off control of incandescent or halogen lamps (5–20 W) in vehicle interior lighting modules.

IC Role / Device Role / Timing Role: Ground-referenced PNP switch sourcing current to lamp anode, driven by CAN/LIN interface logic.

Use Value: Wide Tstg (–55°C to +150°C) and robust V(BR)CEO (–50 V) withstand automotive load-dump transients and cold-cranking conditions.

Use Scenario: Level-shifting and current amplification stage in PLC I/O modules driving 4–20 mA analog outputs or solenoid valves.

IC Role / Device Role / Timing Role: Discrete current booster between DAC output and field-side load, operating in linear or switched mode.

Use Value: High hFE (200–400) reduces required DAC drive current; PCP package allows placement near connectors for EMI mitigation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
2SB1123S-TD-ESame PCP package and electrical specs, but Rank S hFE = 140–280 (lower gain, tighter spread).Preferred where lower base drive sensitivity is needed or where gain consistency matters more than peak current gain.Select 2SB1123S-TD-E when designing for worst-case hFE ≥ 140 and minimizing base current variation across temperature.
MJD2955GTO-220 package, –60 V VCEO, –10 A IC, higher PC (1.5 W on PCB), but slower tf = 1.2 μs.Used in higher-power linear regulators or motor drivers where thermal mass and layout space allow larger packages.Choose MJD2955G only when >2 A continuous current or >1.3 W dissipation is required - not a drop-in replacement due to package and speed mismatch.

Compared with 2SB1123S-TD-E, the 2SB1123T-TD-EX offers higher minimum hFE for reduced base drive burden; versus MJD2955G, it trades raw power handling for superior switching speed and board-area efficiency in space-constrained designs.

Availability

2SB1123T-TD-EX is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, and lamp drivers requiring stable component supply, consistent parametric binning (Rank T), and long-term industrial lifecycle support.

Supply support for 2SB1123T-TD-EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SB1123 series belongs to onsemi's general-purpose bipolar transistor portfolio, designed specifically for high-reliability discrete switching in compact, thermally constrained power interfaces - not for RF or precision analog use.

FAQ

What is the hFE range for 2SB1123T-TD-EX?

The 2SB1123T-TD-EX is binned to Rank T, guaranteeing a DC current gain (hFE) of 200 to 400 when measured at VCE = –2 V and IC = –100 mA. This range is confirmed in the EN1727F datasheet and applies to every unit shipped as 2SB1123T-TD-EX. The 2SB1123T-TD-EX does not share hFE bins with S- or U-ranked variants.

Is 2SB1123T-TD-EX RoHS compliant and lead-free?

Yes, the 2SB1123T-TD-EX is Pb-free and RoHS compliant, as indicated by the "-E" suffix in its full ordering code and confirmed in the "Pb Free" note under Shipping memo in the EN1727F datasheet. The device meets JESD97 and JEDEC JS-001 ESD standards with HBM ≥ 2 kV.

What is the maximum power dissipation for 2SB1123T-TD-EX on a standard PCB?

When mounted on a standard FR-4 PCB (not ceramic), the 2SB1123T-TD-EX has a maximum PC of 0.5 W at Ta = 25°C, per the Absolute Maximum Ratings table. Derating begins at 4.2 mW/°C above 25°C ambient. For 1.3 W operation, the EN1727F datasheet specifies mounting on a 250 mm² × 0.8 mm ceramic substrate.

Can 2SB1123T-TD-EX replace 2SB1123S-TD-E in an existing design?

Yes, the 2SB1123T-TD-EX is pin-compatible and electrically interchangeable with 2SB1123S-TD-E, differing only in hFE bin (T: 200–400 vs. S: 140–280). No PCB changes are required, but verify base drive sufficiency under worst-case hFE = 200 if the original design used S-rank units at hFE = 140.

What is the recommended land pattern for 2SB1123T-TD-EX?

The EN1727F datasheet provides a land pattern example on page 8 (PS No.1727-8/8): pad length 3.0 mm, width 1.5 mm, spacing 1.8 mm between pins 1–2 and 2–3, with thermal pad (pin 2) extended to ≥ 10 mm² copper area. Use solder mask defined pads and 0.2 mm stencil aperture for optimal reflow yield.

2SB1123T-TD-EX Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
2SB1123
Package/Case:
TO-243AA
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
2 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Power - Max:
500 mW
Frequency - Transition:
150MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PCP

2SB1123T-TD-EX FAQ

1.How can I place an order for 2SB1123T-TD-EX through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1123T-TD-EX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1123T-TD-EX reliable?

The price and inventory of 2SB1123T-TD-EX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1123T-TD-EX is usually 5 days.

3.What payment methods are accepted for 2SB1123T-TD-EX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1123T-TD-EX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1123T-TD-EX?

2SB1123T-TD-EX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1123T-TD-EX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1123T-TD-EX?

For technical support, including 2SB1123T-TD-EX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1123T-TD-EX requirements.

6.How does Aetrix verify that 2SB1123T-TD-EX is sourced from the original manufacturer or authorized distributors?

All 2SB1123T-TD-EX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1123T-TD-EX meets industry standards.

7.What is the process for return or replacement of 2SB1123T-TD-EX?

All 2SB1123T-TD-EX units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1123T-TD-EX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1123T-TD-EX part is unused and in its original packaging.

Return procedure for 2SB1123T-TD-EX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2SB1123T-TD-EX Tags

  • 2SB1123T-TD-EX
  • 2SB1123T-TD-EX PDF
  • 2SB1123T-TD-EX Datasheet
  • 2SB1123T-TD-EX Specifications
  • 2SB1123T-TD-EX Images
  • onsemi
  • onsemi 2SB1123T-TD-EX
  • Buy 2SB1123T-TD-EX
  • 2SB1123T-TD-EX Price
  • 2SB1123T-TD-EX Distributor
  • 2SB1123T-TD-EX Supplier
  • 2SB1123T-TD-EX Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER