onsemi 2SB1124T-TD-E

Overview

2SB1124T-TD-E from onsemi is a PNP bipolar junction transistor rated for –50 V V_CEO, –3 A I_C, and 500 mW P_C (on ceramic substrate), featuring low V_CE(sat) of –0.35 V at –2 A/–100 mA, fast switching (t_on = 70 ns), and h_FE rank T (200–400 @ –100 mA). It is used in relay drivers and voltage regulators requiring robust saturation performance.

For engineers reviewing the 2SB1124T-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SC-62 (SOT-89) package compatibility, –50 V breakdown rating, low-saturation operation under ≥2 A load, and Pb-free TD reel packaging with 1,000 pcs./reel quantity.

Technical Context

This PNP transistor employs FBET and MBIT processes to achieve low V_CE(sat) and high ASO margin. Its f_T of 150 MHz supports medium-speed switching in power control circuits, while Cob of 25 pF at –10 V enables stable operation in feedback and driver stages.

Rated for T_j = 150 °C and T_stg = –55 to +150 °C, it operates reliably across industrial ambient ranges. The device is specified with dual h_FE bins (h_FE1 = 100–560 @ –100 mA; h_FE2 = 35 min @ –3 A), ensuring predictable gain under both bias and full-load conditions.

Key Specifications

Pinout & Package

2SB1124T-TD-E is housed in a PCP package-JEITA/JEDEC-registered as SC-62 (equivalent to SOT-89, TO-243)-with gull-wing leads, 0.058 g mass, and land pattern optimized for thermal dissipation on ceramic substrates (250 mm² × 0.8 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with 2SB1124S-TD-E, the 2SB1124T-TD-E offers higher h_FE for more efficient base drive, while MJD2955G trades footprint and speed for higher current and voltage headroom-making 2SB1124T-TD-E optimal for compact, medium-speed, medium-current PNP switching where gain consistency matters.

Availability

2SB1124T-TD-E is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, and lamp drivers requiring stable component supply, RoHS compliance, and SOT-89 footprint compatibility.

Supply support for 2SB1124T-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SB1124T-TD-E belongs to onsemi's general-purpose PNP transistor product line, engineered for reliable medium-power switching in industrial controls and power management where low saturation voltage and thermal robustness are critical.

FAQ

What is the maximum continuous collector current for the 2SB1124T-TD-E?

The 2SB1124T-TD-E supports a maximum continuous collector current (I_C) of –3 A when mounted on a ceramic substrate (250 mm² × 0.8 mm). This rating assumes ambient temperature ≤25 °C and accounts for thermal resistance of the PCP (SOT-89) package. Derating applies above 25 °C per the P_C vs. T_a curve in the datasheet.

Is the 2SB1124T-TD-E pin-compatible with other variants like 2SB1124S-TD-E?

Yes, the 2SB1124T-TD-E shares identical pinout (Base–Collector–Emitter on pins 1–2–3), package (PCP/SC-62), and mechanical dimensions with 2SB1124S-TD-E and all other 2SB1124/2SD1624 variants in the TD reel family. Only h_FE rank and halogen content differ between these part numbers.

What does the 'T' in 2SB1124T-TD-E signify?

The 'T' in 2SB1124T-TD-E denotes the h_FE gain rank-specifically 200 to 400 at –100 mA and –2 V V_CE. This distinguishes it from 'S' (140–280) and 'U' (280–560) ranks. All other electrical and mechanical specifications remain identical across the S/T/U ranks.

Can the 2SB1124T-TD-E be used in place of an NPN transistor like 2SD1624T-TD-E?

No-the 2SB1124T-TD-E is a PNP transistor and cannot functionally replace the NPN 2SD1624T-TD-E without circuit redesign. Their polarities, biasing requirements, and current flow directions are opposite. Swapping them would invert logic states and likely damage the circuit unless topology is reconfigured.

Does the 2SB1124T-TD-E meet RoHS and halogen-free requirements?

Yes, the 2SB1124T-TD-E is Pb-free (RoHS-compliant) as indicated by the '-E' suffix. It is not halogen-free; for halogen-free versions, select the '-H' suffix variant (e.g., 2SB1124T-TD-H), which meets IEC 61249-2-21 standards.