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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1124T-TD-H

Name: 2SB1124T-TD-H
Brand: onsemi
SKU: 2SB1124T-TD-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1124T-TD-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: 2SB1124T-TD-H.pdf

Description:: TRANS PNP 50V 3A PCP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1124T-TD-H from onsemi is a PNP bipolar junction transistor in PCP (SOT-89) package, rated for −50 V V_CEO, −3 A I_C, and 500 mW power dissipation at T_a = 25°C on ceramic substrate. It delivers low V_CE(sat) of −0.35 V (typ) at −2 A/−100 mA drive and supports fast switching with t_on = 70 ns, used in relay drivers and voltage regulators.

For engineers reviewing the 2SB1124T-TD-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, −50 V breakdown rating, low saturation voltage under high current, SOT-89 thermal performance on ceramic board, and Pb-free + halogen-free compliance per TD-H marking.

Technical Context

This device uses FBET and MBIT processes to achieve low V_CE(sat) and wide ASO. Its h_FE ranges from 200–400 (Rank T), with f_T = 150 MHz at −10 V/−50 mA, supporting medium-frequency switching in linear and saturated-mode applications.

Thermal design relies on mounting on a 250 mm² × 0.8 mm ceramic substrate for 1.5 W derated dissipation. The −6 V V_EBO and −60 V V_CBO ratings enable robust biasing in negative-rail control circuits without external protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Supports operation in −48 V telecom rails and industrial negative-supply systems
I_C	−3 A - Delivers sufficient current for driving relays, lamps, and small solenoids directly
V_CE(sat)	−0.35 V (typ) at −2 A/−100 mA - Minimizes conduction loss and self-heating in high-duty-cycle switches
f_T	150 MHz - Enables stable operation up to ~10–20 MHz switching in Class-A/B amplifiers or PWM stages
h_FE (Rank T)	200–400 at −2 V/−100 mA - Ensures predictable base drive requirements across production lots
t_on/t_f	70 ns / 35 ns - Reduces transition losses in 100–500 kHz DC-DC and motor-control H-bridge drivers
P_C (ceramic)	1.5 W - Allows >2× power handling vs. standard PCB mounting, critical for compact power stages

Pinout & Package

Package: PCP (JEITA SC-62 / JEDEC TO-243 / industry-standard SOT-89), surface-mount, 3-pin, thermally enhanced plastic case with exposed collector tab. Dimensions: 4.5 mm × 2.5 mm × 1.6 mm (L×W×H), mass 0.058 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring −100 mA drive for full saturation at −2 A load
2	Collector	High-current output node; electrically connected to exposed tab for thermal path to PCB copper
3	Emitter	Common reference terminal tied to negative rail; must be low-inductance connection for fast switching

Key Features

Feature	Design Value
Low V_CE(sat)	−0.35 V typ at −2 A enables <1 W conduction loss in 24 V relay drivers
Wide ASO	Robust secondary breakdown margin supports safe operation at I_C = −3 A with V_CE = −20 V
Fast switching	70 ns turn-on + 35 ns fall time allows reliable 300 kHz PWM in discrete power stages
Pb-free + halogen-free	TD-H suffix certifies full RoHS 3 and JEDEC JS709E compliance for green manufacturing

Applications

Voltage Regulator Pass Element	Relay Driver Stage
Use Scenario: Linear post-regulation in −12 V or −24 V power supplies with adjustable output via feedback network. IC Role / Device Role / Timing Role: PNP pass transistor operating in active region, dissipating up to 1.5 W with ceramic heatsinking. Use Value: Low V_CE(sat) reduces dropout voltage and improves efficiency at full load; h_FE consistency ensures stable loop gain across temperature.	Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and industrial controllers. IC Role / Device Role / Timing Role: High-current saturated switch turning relay coil on/off with minimal base drive overhead. Use Value: −3 A I_C rating handles relay inrush currents; fast t_f prevents contact chatter during de-energization.
Lamp Driver for Automotive Lighting	Negative-Rail Load Switch
Use Scenario: Controlling incandescent or LED lamp loads referenced to battery ground in automotive body control units. IC Role / Device Role / Timing Role: Low-side PNP switch sinking current from lamp anode to chassis ground. Use Value: −50 V V_CEO withstands load-dump transients up to −40 V; low V_CE(sat) minimizes heat in confined lamp housings.	Use Scenario: Enabling/disabling negative-voltage analog circuitry (e.g., op-amp bias rails) in test equipment. IC Role / Device Role / Timing Role: Precision-controlled series switch isolating −5 V to −15 V supply domains. Use Value: Tight h_FE binning (Rank T) ensures repeatable on-resistance; −6 V V_EBO permits safe gate/base bias from positive logic signals.

Voltage Regulator Pass Element

Relay Driver Stage

Use Scenario: Linear post-regulation in −12 V or −24 V power supplies with adjustable output via feedback network.

IC Role / Device Role / Timing Role: PNP pass transistor operating in active region, dissipating up to 1.5 W with ceramic heatsinking.

Use Value: Low V_CE(sat) reduces dropout voltage and improves efficiency at full load; h_FE consistency ensures stable loop gain across temperature.

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and industrial controllers.

IC Role / Device Role / Timing Role: High-current saturated switch turning relay coil on/off with minimal base drive overhead.

Use Value: −3 A I_C rating handles relay inrush currents; fast t_f prevents contact chatter during de-energization.

Lamp Driver for Automotive Lighting

Negative-Rail Load Switch

Use Scenario: Controlling incandescent or LED lamp loads referenced to battery ground in automotive body control units.

IC Role / Device Role / Timing Role: Low-side PNP switch sinking current from lamp anode to chassis ground.

Use Value: −50 V V_CEO withstands load-dump transients up to −40 V; low V_CE(sat) minimizes heat in confined lamp housings.

Use Scenario: Enabling/disabling negative-voltage analog circuitry (e.g., op-amp bias rails) in test equipment.

IC Role / Device Role / Timing Role: Precision-controlled series switch isolating −5 V to −15 V supply domains.

Use Value: Tight h_FE binning (Rank T) ensures repeatable on-resistance; −6 V V_EBO permits safe gate/base bias from positive logic signals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955G	TO-220 package, higher P_C (1.75 W), same −60 V/−5 A rating but slower t_f (150 ns)	Better for >3 A continuous loads; unsuitable for space-constrained SOT-89 footprints	Select when thermal budget exceeds 1.5 W or PCB layout allows TO-220 mounting
2SB1218A-TL-E	SOT-89 package, −50 V/−2 A, lower I_C, V_CE(sat) = −0.5 V (typ) at −1 A	Lower current capability; optimized for cost-sensitive 1 A lamp/relay drivers	Select when load current ≤1.5 A and tighter V_CE(sat) tolerance is not required

Compared with MJD2955G and 2SB1218A-TL-E, the 2SB1124T-TD-H uniquely balances SOT-89 footprint, −3 A capability, sub-0.4 V saturation, and halogen-free compliance-making it optimal for high-density industrial control boards needing reliable −2 A switching with minimal thermal derating.

Availability

2SB1124T-TD-H is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, and lamp drivers requiring stable component supply with full RoHS 3 and halogen-free compliance.

Supply support for 2SB1124T-TD-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SB1124 series belongs to onsemi's general-purpose PNP BJT product line, engineered for high-current, low-saturation switching in industrial power control and electromechanical actuation systems.

FAQ

What is the maximum continuous collector current rating for the 2SB1124T-TD-H?

The 2SB1124T-TD-H is rated for −3 A continuous collector current (I_C) at T_a = 25°C when mounted on a 250 mm² × 0.8 mm ceramic substrate. Derating applies above 25°C ambient; at 75°C, usable I_C drops to approximately −2.1 A per the PC–Ta curve in the datasheet. This rating ensures reliable operation in relay and lamp driver applications without forced cooling.

Does the 2SB1124T-TD-H have halogen-free and lead-free certification?

Yes, the 2SB1124T-TD-H carries the "TD-H" suffix, which explicitly denotes compliance with both Pb-free (RoHS 3) and halogen-free (per JEDEC JS709E) standards. This is confirmed in the Ordering Information table and Package Dimensions section of the official onsemi datasheet EN2019B. The 2SB1124T-TD-H meets environmental requirements for green manufacturing in industrial and automotive end equipment.

What is the h_FE range for the 2SB1124T-TD-H, and how is it binned?

The 2SB1124T-TD-H is Rank T, with DC current gain (h_FE) specified from 200 to 400 at V_CE = −2 V and I_C = −100 mA. This binning is laser-marked on the device and guaranteed per lot. Rank T provides tighter h_FE distribution than Rank S or U, enabling more predictable base drive design in production-grade voltage regulators and relay drivers using the 2SB1124T-TD-H.

Can the 2SB1124T-TD-H replace the 2SB1124S-TD-H in a design?

Yes-the 2SB1124T-TD-H and 2SB1124S-TD-H share identical package, pinout, absolute maximum ratings, and thermal specifications; only h_FE binning differs (T: 200–400 vs. S: 140–280). No PCB or schematic changes are needed. If the original design relied on minimum h_FE ≥200, the 2SB1124T-TD-H is a direct upgrade; if base drive was sized for h_FE ≥140, the 2SB1124T-TD-H offers improved margin and reduced base current consumption.

What is the recommended PCB land pattern for the 2SB1124T-TD-H?

The official onsemi land pattern for the 2SB1124T-TD-H (PCP/SOT-89) specifies a 3-pad layout with pad widths matching the lead dimensions: 0.9 mm (pin 1), 1.5 mm (pin 2, collector tab), and 0.9 mm (pin 3), all 1.8 mm long. A 250 mm² copper pour connected to pin 2 is required to achieve the 1.5 W thermal rating. This pattern is detailed in the "Land Pattern Example" section of datasheet EN2019B and must be followed to ensure thermal reliability of the 2SB1124T-TD-H.

2SB1124T-TD-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 500 mW

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PCP

2SB1124T-TD-H FAQ

1.How can I place an order for 2SB1124T-TD-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1124T-TD-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1124T-TD-H reliable?

The price and inventory of 2SB1124T-TD-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1124T-TD-H is usually 5 days.

3.What payment methods are accepted for 2SB1124T-TD-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1124T-TD-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1124T-TD-H?

2SB1124T-TD-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1124T-TD-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1124T-TD-H?

For technical support, including 2SB1124T-TD-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1124T-TD-H requirements.

6.How does Aetrix verify that 2SB1124T-TD-H is sourced from the original manufacturer or authorized distributors?

All 2SB1124T-TD-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1124T-TD-H meets industry standards.

7.What is the process for return or replacement of 2SB1124T-TD-H?

All 2SB1124T-TD-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1124T-TD-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1124T-TD-H part is unused and in its original packaging.

Return procedure for 2SB1124T-TD-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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