onsemi 2SB1126-TD-E

Overview

2SB1126-TD-E from onsemi is a PNP epitaxial planar silicon transistor designed for high-gain switching in driver circuits, with V_CEO = −50 V, I_C = −1.5 A, h_FE ≥ 4000 at −500 mA, and P_C = 1.5 W on ceramic board - used in relay, lamp, and motor drivers where compact size and high current gain are critical.

For engineers reviewing the 2SB1126-TD-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed DC current gain >4000 at high collector current, low V_CE(sat) (−0.9 V typ), robust −80 V V_CBO, and TO-220AB package compatibility for thermal management in discrete driver stages.

Technical Context

This PNP bipolar junction transistor operates in saturation/switching mode with verified h_FE ≥ 4000 at V_CE = −2 V and I_C = −500 mA, and supports pulsed operation up to I_CP = −3 A. Its f_T = 120 MHz enables stable performance beyond audio-frequency switching.

The device features low saturation voltages - V_CE(sat) ≤ −1.5 V and V_BE(sat) ≤ −2.0 V at I_C = −500 mA / I_B = −0.5 mA - and is rated for T_j = 150 °C, making it suitable for thermally constrained industrial driver modules.

Key Specifications

Pinout & Package

2SB1126-TD-E is housed in a TO-220AB package with three leads: Collector (tab), Base, and Emitter - the metal tab is electrically connected to the collector and serves as primary heat path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-gain switching applications.

Compared with 2SB1126-TD-E, 2SB1215-TL-E trades gain for voltage margin, while MJD2955G sacrifices gain and efficiency for raw current capacity - making 2SB1126-TD-E optimal for space-constrained, low-drive, medium-power driver stages.

Availability

2SB1126-TD-E is available at Aetrix Electronics and suitable for relay drivers, lamp drivers, motor drivers, and hammer drivers requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SB1126-TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SB1126-TD-E belongs to onsemi's legacy discrete bipolar transistor family engineered specifically for high-reliability, high-density driver applications in industrial automation and electromechanical control systems.

FAQ

What is the maximum continuous collector current for 2SB1126-TD-E?

The 2SB1126-TD-E has a maximum continuous collector current (I_C) of −1.5 A when mounted on a ceramic board measuring 250 mm² × 0.8 mm. This rating assumes ambient temperature of 25 °C and proper thermal management. Exceeding this current without adequate heatsinking risks junction overheating and permanent device failure. Always verify actual board layout and airflow in the final 2SB1126-TD-E application.

Is 2SB1126-TD-E pin-compatible with 2SD1626?

No, 2SB1126-TD-E is not pin-compatible with 2SD1626. While both share the TO-220AB package outline, 2SB1126-TD-E is a PNP transistor with Collector–Base–Emitter pinout (Tab–Middle–Right), whereas 2SD1626 is an NPN device with reversed polarity and complementary pin assignment. Using them interchangeably without circuit redesign will result in functional failure. Always confirm pinout per official onsemi documentation for each 2SB1126-TD-E or 2SD1626 design.

What is the typical DC current gain (h_FE) of 2SB1126-TD-E at operating conditions?

The typical DC current gain (h_FE) of 2SB1126-TD-E is ≥ 4000 at V_CE = −2 V and I_C = −500 mA, and ≥ 3000 at V_CE = −2 V and I_C = −10 mA. This high gain enables microcontroller-level base drive (e.g., <200 µA for 1 A load), reducing external driver complexity. The 2SB1126-TD-E datasheet specifies minimum values only; actual units may exceed these figures depending on process variation and temperature.

Does 2SB1126-TD-E require a heatsink in standard operation?

A heatsink is recommended for 2SB1126-TD-E when dissipating >0.5 W continuously or operating above 60 °C ambient. Its 1.5 W power dissipation rating applies only when mounted on a specified 250 mm² × 0.8 mm ceramic board - standard FR-4 PCBs provide significantly less thermal conduction. For reliability in industrial environments, use of an insulated clip-on heatsink or thermal pad with the 2SB1126-TD-E metal tab is strongly advised.

What is the absolute maximum V_CBO rating for 2SB1126-TD-E?

The absolute maximum collector-to-base voltage (V_CBO) for 2SB1126-TD-E is −80 V, measured with emitter open (I_E = 0 A). This rating defines the upper limit of reverse-biased collector-base junction stress and must not be exceeded, even transiently. In practice, design margins should keep operating V_CBO below −60 V to ensure long-term reliability - especially in inductive load switching where voltage spikes may occur. This parameter is fully specified and tested for every 2SB1126-TD-E unit.