onsemi 2SB1131S-AE
- Part No.:
- 2SB1131S-AE
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
-
2SB1131S-AE.pdf
- Description:
- TRANS PNP 20V 5A 3-MP
- Quantity:
- Payment:

- Shipping:

Inventory:11,000
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Product details
Overview
2SB1131S-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in strobe circuits, relay drivers, and lamp drivers. It delivers −5 A continuous collector current, −20 V VCEO, −25 V VCBO, 1 W power dissipation, and low saturation voltages of −0.5 V (VCE(sat)) and −1.0 V (VBE(sat)) at IC = −3 A, IB = −60 mA.
For engineers reviewing the 2SB1131S-AE datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP switching performance under pulsed −8 A loads, guaranteed hFE range of 100–400 at −500 mA, thermal stability up to Tj = +150 °C, and TO-220AB package compatibility with industrial heat-sink mounting.
Technical Context
This device operates as a medium-power PNP bipolar junction transistor optimized for fast turn-on/turn-off in pulse-driven loads. Its FBET/MBIT process enables low VCE(sat) and high fT (30 MHz at VCE = −5 V, IC = −200 mA), supporting reliable strobe flash timing and DC motor control.
It features a grounded-emitter configuration with base-controlled conduction, rated for −25 V collector-base breakdown and −5 V emitter-base reverse voltage. The device exhibits typical switching times of ton = 40 ns, tstg = 200 ns, and tf = 10 ns under standardized test conditions (VCC = 10 V, RL = 5 Ω, IC = 2 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | −25 V - Maximum reverse voltage between collector and base before breakdown; defines safe operating margin in high-voltage switching. |
| VCEO | −20 V - Maximum collector-to-emitter voltage with base open; sets upper limit for supply rail in relay/lamp driver designs. |
| IC (cont) | −5 A - Continuous collector current rating; supports sustained operation in 12 V automotive lamp or solenoid drivers. |
| PC | 1 W - Total power dissipation at Ta = 25 °C; requires heatsinking above ~0.5 W ambient operation. |
| hFE | 100–400 @ IC = −500 mA - DC current gain range ensures predictable base drive sizing across production lots. |
| VCE(sat) | −0.5 V max @ IC = −3 A, IB = −60 mA - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switches. |
| fT | 30 MHz @ VCE = −5 V, IC = −200 mA - Gain-bandwidth product confirms suitability for sub-100 ns switching applications like camera strobes. |
Pinout & Package
2SB1131S-AE is housed in a TO-220AB plastic package with integral heat sink tab (pin 2). The case is electrically connected to the collector terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current exit path for PNP conduction | Connected to system ground or low-side return; polarity must be reversed vs. NPN layouts. |
| 2 (Collector) | Current entry path; tied to heat sink | Electrically connected to metal tab; requires isolation washer if mounted to grounded chassis. |
| 3 (Base) | Control input for bipolar conduction | Driven negative relative to emitter to turn on; requires current-limiting resistor per hFE and load. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −0.5 V max at −3 A enables <1.5 W conduction loss in 12 V lamp drivers, reducing thermal stress. |
| High IC capability | −5 A continuous rating supports direct driving of 24 W incandescent lamps or 12 V/5 A solenoids without external buffers. |
| Fast switching | ton/tf = 40 ns/10 ns allows precise 1–10 kHz strobe timing with minimal overlap loss in half-bridge configurations. |
| Robust SOA | Rated for single-pulse ICP = −8 A (100 ms) - accommodates inrush currents in relay coils and flash capacitor discharge paths. |
Applications
| Strobe Flash Circuits | DC Relay Drivers |
|---|---|
Use Scenario: High-intensity photographic flash discharge through xenon tube with 100–500 µs pulse width. IC Role / Device Role / Timing Role: Main switch controlling energy release from charged storage capacitor into flash tube. Use Value: Fast tf = 10 ns and −8 A pulse rating ensure crisp flash timing and reliable triggering across temperature. |
Use Scenario: 12 V automotive relay coil control in body electronics modules. IC Role / Device Role / Timing Role: High-current PNP switch sinking relay coil current to ground when base is pulled low. Use Value: −5 A continuous rating and −0.5 V VCE(sat) minimize coil voltage drop and contact chatter during activation. |
| Lamp Dimming Drivers | Industrial Solenoid Control |
Use Scenario: Phase-cut dimming of 24 W halogen lamps in architectural lighting systems. IC Role / Device Role / Timing Role: Synchronized switching element in leading-edge dimmer output stage. Use Value: Guaranteed hFE ≥ 100 at −500 mA ensures stable base drive across line voltage variations and temperature drift. |
Use Scenario: On/off control of 24 V DC industrial solenoid valves in PLC I/O modules. IC Role / Device Role / Timing Role: Final-stage power switch interfacing microcontroller GPIO to inductive load. Use Value: TO-220AB package with collector-tab isolation simplifies PCB layout and meets IEC 61000-4-5 surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SB1218A | Higher VCEO (−30 V), lower hFE (60–200), same TO-220AB package | Better suited for 24 V industrial systems requiring higher voltage margin; less gain stability at low IC | Select when VCC > 20 V and base drive current is abundant; verify hFE spread at target IC. |
| MJD2955T4 | Lower VCBO (−70 V), higher PC (1.5 W), TO-220 package with isolated tab | Supports higher ambient temperatures and longer duty cycles; tab not internally connected to collector | Prefer for thermally constrained designs needing >1 W dissipation; requires different mounting hardware due to tab isolation. |
Compared with 2SB1131S-AE, 2SB1218A trades gain consistency for voltage headroom, while MJD2955T4 offers superior thermal handling but demands revised mechanical integration-neither is pin-compatible, and both require validation of base drive network and SOA margins.
Availability
2SB1131S-AE is available at Aetrix Electronics and suitable for strobe flash circuits, DC relay drivers, and lamp dimming drivers requiring stable component supply and consistent parametric performance across production batches.
Supply support for 2SB1131S-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012; its transistor product lines remain widely deployed in industrial and automotive systems.
The 2SB1131S-AE belongs to SANYO's legacy high-current PNP transistor family engineered specifically for robust switching in pulsed-load applications such as camera strobes, power relays, and resistive lamp control-emphasizing low saturation loss and thermal resilience.
FAQ
What is the maximum pulsed collector current rating for the 2SB1131S-AE?
The 2SB1131S-AE is rated for ICP = −8 A in single-pulse operation at 100 ms duration, as confirmed in the Absolute Maximum Ratings table. This rating applies under specified thermal conditions and supports transient loads such as flash capacitor discharge. Designers must ensure pulse duty cycle and heatsinking prevent junction temperature from exceeding +150 °C during repeated operation of the 2SB1131S-AE.
Does the 2SB1131S-AE have a built-in base-emitter resistor?
No, the 2SB1131S-AE is a standard three-terminal PNP bipolar transistor without any integrated base resistors. External base current must be supplied via a series resistor sized according to the required IB (e.g., −60 mA for −3 A IC at hFE = 50) and the driving logic voltage level. This discrete architecture gives full control over switching speed and saturation depth in the 2SB1131S-AE.
What is the guaranteed hFE range for the 2SB1131S-AE at IC = −500 mA?
The 2SB1131S-AE is binned with a guaranteed hFE range of 100–400 at VCE = −2 V and IC = −500 mA, as documented in the Electrical Characteristics table. This binning ensures predictable base drive requirements across production units and supports stable operation in feedback-controlled lamp dimmers and relay interfaces using the 2SB1131S-AE.
Can the 2SB1131S-AE be used in linear amplifier applications?
The 2SB1131S-AE is characterized and qualified exclusively for switching operation-not linear amplification. Its SOA curve, thermal resistance, and gain uniformity are optimized for saturated on/off states. Using the 2SB1131S-AE in active-region amplification risks thermal runaway, inconsistent gain, and premature failure due to lack of linear-mode derating data or safe operating area validation.
Is the collector tab of the 2SB1131S-AE electrically connected to pin 2?
Yes-the metal tab on the 2SB1131S-AE TO-220AB package is internally connected to pin 2 (collector), as shown in the package outline diagram and confirmed in the Pinout & Package section. When mounting to a heatsink, electrical isolation (e.g., mica washer + shoulder washer) is mandatory unless the heatsink is floating or intentionally tied to the collector potential in the 2SB1131S-AE circuit.
2SB1131S-AE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max):
- 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 140 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 320MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 3-MP
2SB1131S-AE FAQ
1.How can I place an order for 2SB1131S-AE through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1131S-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1131S-AE reliable?
The price and inventory of 2SB1131S-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1131S-AE is usually 5 days.
3.What payment methods are accepted for 2SB1131S-AE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1131S-AE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1131S-AE?
2SB1131S-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1131S-AE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1131S-AE?
For technical support, including 2SB1131S-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1131S-AE requirements.
6.How does Aetrix verify that 2SB1131S-AE is sourced from the original manufacturer or authorized distributors?
All 2SB1131S-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1131S-AE meets industry standards.
7.What is the process for return or replacement of 2SB1131S-AE?
All 2SB1131S-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1131S-AE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1131S-AE part is unused and in its original packaging.
Return procedure for 2SB1131S-AE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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