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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1131T-AE

Name: 2SB1131T-AE
Brand: onsemi
SKU: 2SB1131T-AE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1131T-AE

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: 2SB1131T-AE.pdf

Description:: TRANS PNP 20V 5A 3-MP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1131T-AE from SANYO is a PNP epitaxial planar silicon transistor designed for high-current switching in strobe circuits, relay drivers, and lamp drivers. It delivers −5 A continuous collector current, −20 V collector–emitter breakdown voltage (V_CEO), −25 V collector–base voltage (V_CBO), 1 W power dissipation at T_A = 25°C, and low saturation voltages of −0.5 V (V_CE(sat)) and −1.0 V (V_BE(sat)) at I_C = −3 A, I_B = −60 mA.

For engineers reviewing the 2SB1131T-AE datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-126 package compatibility, −5 A DC current handling, fast switching times (t_on = 40 ns, t_off = 200 ns), and suitability for pulsed high-power loads in industrial lighting and flash control systems.

Technical Context

The 2SB1131T-AE operates as a medium-power PNP bipolar junction transistor with FBET/MBIT process technology enabling low V_CE(sat) and fast turn-on/turn-off. Its h_FE ranges from 100 to 400 at V_CE = −2 V, I_C = −500 mA, supporting robust current amplification in driver stages.

Designed for discrete switching-not linear regulation-it features a maximum junction temperature of +150°C, storage range from −55°C to +150°C, and safe single-pulse operation up to −8 A for 100 ms. The device requires external base drive limiting and thermal management due to its 1 W ambient-rated dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	−25 V - Maximum reverse bias voltage between collector and base before breakdown; sets upper limit for off-state voltage blocking in high-side switch configurations.
V_CEO	−20 V - Maximum collector–emitter voltage with base open; defines safe operating voltage for common-emitter switching applications.
I_C (DC)	−5 A - Continuous collector current rating; supports sustained load switching in strobes and lamp drivers without derating at 25°C ambient.
P_C	1 W - Maximum power dissipation at T_A = 25°C; requires heatsinking or derating above 25°C per PC–Ta curve (e.g., ~0.5 W at 70°C).
V_CE(sat)	−0.5 V (max) at I_C = −3 A, I_B = −60 mA - Low saturation voltage minimizes conduction loss and heat generation in high-duty-cycle switching.
t_on/t_off	40 ns / 200 ns - Fast switching speeds enable efficient operation in strobe flash timing circuits up to ~10 kHz repetition rates.
f_T	30 MHz - Gain-bandwidth product confirms usable frequency response for pulse amplification and moderate-speed digital switching.

Pinout & Package

2SB1131T-AE is housed in a TO-126 plastic package (standard JEDEC TO-225AA outline), with leads formed for through-hole mounting and thermal pad on the collector tab for heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to system ground or low-side return path; carries full load current in common-emitter configuration.
2 (Collector)	High-current output terminal	Mounted to heatsink via metal tab; connects to positive rail in high-side switch topology or load in low-side sink.
3 (Base)	Control input for transistor biasing	Receives negative current to turn on; requires series resistor to limit I_B and ensure saturation at target I_C.

Key Features

Feature	Design Value
Low V_CE(sat)	−0.5 V max at I_C = −3 A enables <1.5 W conduction loss in 3 A strobe loads-critical for thermal stability in compact flash units.
High I_C capability	−5 A DC rating supports direct driving of xenon flash tubes or incandescent lamps without external Darlington buffering.
Fast switching	40 ns turn-on and 200 ns turn-off allow precise microsecond-level flash timing control and reduced switching losses at 1–10 kHz.
FBET/MBIT process	Enables tight h_FE distribution (100–400) and consistent V_BE(sat), improving batch-to-batch reliability in production strobe modules.

Applications

Strobe Flash Circuits	Lamp Driver Modules
Use Scenario: High-intensity photographic flash discharge triggered by microcontroller GPIO. IC Role / Device Role / Timing Role: Main high-current switch controlling energy release from charged capacitor into xenon tube. Use Value: −5 A rating and 40 ns t_on ensure rapid, repeatable flash initiation with minimal timing jitter and low thermal stress.	Use Scenario: Industrial panel indicator or signage illumination using incandescent or halogen lamps. IC Role / Device Role / Timing Role: Medium-power PNP switch replacing mechanical relays for silent, wear-free lamp control. Use Value: −20 V V_CEO and 1 W dissipation support 12–24 V lamp supplies with no external snubber required.
Relay Driver Stages	Power Supply Sequencing
Use Scenario: Solid-state replacement for coil drivers in automotive or HVAC control panels. IC Role / Device Role / Timing Role: Base-driven PNP switch sourcing current to relay coil (typically 50–200 mA). Use Value: −25 V V_CBO withstands inductive kickback; −1.0 V V_BE(sat) ensures full coil activation even with weak MCU drive.	Use Scenario: Controlled power-up sequencing of sub-circuits in multi-rail embedded systems. IC Role / Device Role / Timing Role: Discrete PNP switch enabling delayed or conditional activation of secondary voltage rails. Use Value: Predictable h_FE range and low V_CE(sat) provide stable on-resistance (<0.1 Ω) for clean rail enable without voltage droop.

Strobe Flash Circuits

Lamp Driver Modules

Use Scenario: High-intensity photographic flash discharge triggered by microcontroller GPIO.

IC Role / Device Role / Timing Role: Main high-current switch controlling energy release from charged capacitor into xenon tube.

Use Value: −5 A rating and 40 ns t_on ensure rapid, repeatable flash initiation with minimal timing jitter and low thermal stress.

Use Scenario: Industrial panel indicator or signage illumination using incandescent or halogen lamps.

IC Role / Device Role / Timing Role: Medium-power PNP switch replacing mechanical relays for silent, wear-free lamp control.

Use Value: −20 V V_CEO and 1 W dissipation support 12–24 V lamp supplies with no external snubber required.

Relay Driver Stages

Power Supply Sequencing

Use Scenario: Solid-state replacement for coil drivers in automotive or HVAC control panels.

IC Role / Device Role / Timing Role: Base-driven PNP switch sourcing current to relay coil (typically 50–200 mA).

Use Value: −25 V V_CBO withstands inductive kickback; −1.0 V V_BE(sat) ensures full coil activation even with weak MCU drive.

Use Scenario: Controlled power-up sequencing of sub-circuits in multi-rail embedded systems.

IC Role / Device Role / Timing Role: Discrete PNP switch enabling delayed or conditional activation of secondary voltage rails.

Use Value: Predictable h_FE range and low V_CE(sat) provide stable on-resistance (<0.1 Ω) for clean rail enable without voltage droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1210	Higher V_CEO (−30 V), same TO-126 package, but lower h_FE (60–240) and slower t_off (300 ns).	Better suited for 24 V industrial controls where higher voltage margin is critical; less optimal for fast strobes.	Select when V_CEO > −20 V is mandatory and switching speed is secondary.
MJD2955T4	TO-220 package, −60 V V_CEO, −10 A I_C, but larger footprint and higher V_CE(sat) (−1.3 V).	Used in higher-voltage power supply regulators and motor drivers requiring greater ruggedness and thermal mass.	Choose for designs needing >−20 V blocking or >−5 A current, accepting larger board area and higher conduction loss.

Compared with 2SB1131T-AE, the 2SB1210 trades speed and gain for voltage headroom, while the MJD2955T4 sacrifices compactness and efficiency for higher power handling-making the 2SB1131T-AE optimal for space-constrained, fast-switching strobe and lamp applications at ≤−20 V.

Availability

2SB1131T-AE is available at Aetrix Electronics and suitable for strobe flash circuits, relay driver modules, and lamp driver applications requiring stable component supply, consistent h_FE binning, and reliable TO-126 packaging.

Supply support for 2SB1131T-AE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer known for high-reliability discrete devices and analog ICs before its acquisition by Panasonic in 2012; its transistor portfolio emphasized performance consistency and industrial-grade robustness.

The 2SB1131T-AE belongs to SANYO's general-purpose PNP switching transistor family, engineered specifically for high-current, fast-response applications in photographic equipment, industrial controls, and power interface circuits.

FAQ

What is the pin configuration of the 2SB1131T-AE?

The 2SB1131T-AE uses a standard TO-126 package with pin 1 as Emitter, pin 2 as Collector (connected to the metal tab), and pin 3 as Base. This configuration is confirmed in SANYO's official datasheet No. 2420–2/4 and matches JEDEC TO-225AA mechanical drawings. Correct orientation is critical-reversing emitter and collector will cause immediate failure under load. Always verify pinout with the physical marking "2SB1131" and tab position before PCB layout.

Does the 2SB1131T-AE support pulsed current beyond its DC rating?

Yes-the 2SB1131T-AE supports −8 A peak collector current for pulses up to 100 ms, as specified in the Safe Operating Area (SOA) chart (No. 2420–3/4). This capability enables brief high-power strobe discharges without thermal runaway, provided duty cycle remains low (<1%) and heatsinking is adequate. For continuous operation, however, the −5 A DC limit must be strictly observed to prevent junction overheating.

What is the typical h_FE range for the 2SB1131T-AE at operating conditions?

The 2SB1131T-AE is binned into three h_FE groups: 100–200, 140–400, and 200–400, measured at V_CE = −2 V and I_C = −500 mA. The "T-AE" suffix indicates the middle grade (140–400), ensuring predictable current gain for stable base drive design in relay and lamp drivers. This binning reduces variation in saturation behavior across production lots compared to ungraded variants.

Can the 2SB1131T-AE be used in linear amplifier applications?

No-the 2SB1131T-AE is optimized for switching, not linear operation. Its SOA curve shows limited safe second breakdown region, and its f_T (30 MHz) and h_FE roll-off make it unsuitable for audio or RF amplification. Using it in analog gain stages risks thermal instability and premature failure. For linear PNP applications, consider purpose-built amplifiers like the BC557 or MPSA92 instead of the 2SB1131T-AE.

Is the 2SB1131T-AE RoHS compliant?

The 2SB1131T-AE was manufactured prior to RoHS enforcement deadlines and does not carry formal RoHS certification. SANYO's documentation (dated October 2003) makes no mention of lead-free termination or halogen-free materials. For new designs requiring compliance, engineers should evaluate modern alternatives such as the NSS12201CF or PBSS4041T-though these require redesign due to different packages and drive requirements. The 2SB1131T-AE remains viable for legacy repair and non-regulated industrial use.

2SB1131T-AE Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 60mA, 3A

Current - Collector Cutoff (Max):: 500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 320MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 3-MP

2SB1131T-AE FAQ

1.How can I place an order for 2SB1131T-AE through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1131T-AE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1131T-AE reliable?

The price and inventory of 2SB1131T-AE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1131T-AE is usually 5 days.

3.What payment methods are accepted for 2SB1131T-AE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1131T-AE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1131T-AE?

2SB1131T-AE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1131T-AE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1131T-AE?

For technical support, including 2SB1131T-AE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1131T-AE requirements.

6.How does Aetrix verify that 2SB1131T-AE is sourced from the original manufacturer or authorized distributors?

All 2SB1131T-AE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1131T-AE meets industry standards.

7.What is the process for return or replacement of 2SB1131T-AE?

All 2SB1131T-AE units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1131T-AE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1131T-AE part is unused and in its original packaging.

Return procedure for 2SB1131T-AE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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