onsemi 2SB1133R

Overview

2SB1133R from SANYO is a PNP silicon power transistor in TO-220ML package, rated for −60 V V_CEO, −3 A I_C, 25 W P_C at T_c = 25°C, and DC current gain h_FE of 100–200 (Rank R) at V_CE = −5 V, I_C = −0.5 A - used in low-frequency general-purpose amplifier and switching applications including audio output stages and relay drivers.

For engineers reviewing the 2SB1133R datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-220ML thermal performance, −60 V breakdown rating, h_FE binning consistency (Rank R), and V_CE(sat) ≤ −1.0 V at I_C = −2 A / I_B = −0.2 A.

Technical Context

The 2SB1133R employs triple-diffused planar silicon technology with MBIT process to achieve wide safe operating area (SOA) and micaless construction for simplified heatsink mounting. It operates as a medium-power, low-frequency PNP switch or linear amplifier with guaranteed h_FE classification per Rank R (100–200).

Its electrical behavior is defined at T_a = 25°C and T_c = 25°C, with junction temperature limited to 150°C and storage range from −40°C to +150°C. Saturation characteristics are specified under forced β = 10 (I_C/I_B = 10), and f_T is 40 MHz typical at I_C = −0.5 A.

Key Specifications

Pinout & Package

2SB1133R uses the SANYO TO-220ML package: insulated back surface, no mica required, 3-pin vertical lead frame with metal tab (collector-connected), optimized for mechanical robustness and thermal transfer to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with 2SB1133R, the 2SB1260-Z offers identical voltage/current ratings but lacks guaranteed h_FE binning and requires mandatory electrical isolation, while the BCP53-16 trades power capability and thermal performance for compactness and SMT compatibility - neither is pin-compatible nor a direct replacement.

Availability

2SB1133R is available at Aetrix Electronics and suitable for audio amplifier output stages, relay driver circuits, and linear negative-voltage regulator designs requiring stable component supply, consistent h_FE binning, and proven TO-220ML thermal reliability.

Supply support for 2SB1133R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in analog, power, and optoelectronic devices before its acquisition by ON Semiconductor in 2012; known for rugged, thermally optimized discrete transistors.

The 2SB1133R belongs to SANYO's low-frequency general-purpose amplifier transistor family, designed specifically for cost-sensitive industrial and consumer audio applications demanding high SOA, micaless mounting, and binned DC gain.

FAQ

What is the h_FE range for 2SB1133R?

The 2SB1133R is Rank R binned with DC current gain h_FE of 100–200 measured at V_CE = −5 V and I_C = −0.5 A. This binning is explicitly defined in the SANYO ENN3031A datasheet and distinguishes it from Rank Q (70–140) and Rank S (140–280) variants of the same 2SB1133 base part number.

Is the metal tab of 2SB1133R electrically connected?

Yes, the metal tab of the 2SB1133R is internally connected to the collector (Pin 2). Because it uses the TO-220ML package with micaless construction, the tab must be electrically isolated from the heatsink unless the circuit design intentionally references the collector to chassis ground.

What is the maximum allowable collector dissipation for 2SB1133R at 70°C case temperature?

Per the PC–Tc derating curve in the 2SB1133R datasheet, collector dissipation drops linearly from 25 W at T_c = 25°C to 0 W at T_c = 125°C. At T_c = 70°C, the maximum allowable P_C is approximately 15.5 W - calculated using the slope of −0.217 W/°C derived from the published curve.

Can 2SB1133R replace 2SB1182 in an existing design?

No - the 2SB1182 has V_CEO = −80 V and I_C = −2 A, differing in both voltage rating and current capability. While both are PNP TO-220 transistors, the 2SB1133R's −60 V rating and −3 A rating do not provide margin for direct substitution where 80 V breakdown is required; redesign validation is necessary.

Does 2SB1133R support pulse operation beyond its DC current rating?

Yes, the 2SB1133R supports pulsed collector current I_CP = −8 A with duty cycle ≤ 1% and pulse width ≤ 100 µs, as specified in its Absolute Maximum Ratings table. This allows brief overcurrent handling during motor startup or relay pull-in, provided average power remains within DC derating limits.