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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1143T

Name: 2SB1143T
Brand: onsemi
SKU: 2SB1143T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1143T

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2SB1143T.pdf

Description:: TRANS PNP 50V 4A TO-126ML

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1143T from onsemi is a PNP bipolar junction transistor in TO-126ML package, rated for −50 V V_CEO, −4 A I_C, and low −190 mV typical V_CE(sat) at −2 A/−100 mA drive, used in relay drivers and voltage regulators where high-current switching with minimal conduction loss is required.

For engineers reviewing the 2SB1143T datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE rank T (200–400 at −100 mA), −50 V breakdown rating, TO-126ML thermal performance (10 W at T_c = 25°C), and validated switching times (t_on = 70 ns, t_stg = 650 ns).

Technical Context

This PNP transistor employs FBET and MBIT processes to achieve low saturation voltage and wide safe operating area (ASO). Its −50 V V_CEO and −60 V V_CBO support robust operation in industrial DC power control circuits with transient voltage margins.

Designed for linear and switching applications, it delivers h_FE = 40 minimum at −3 A and f_T = 150 MHz, enabling reliable gain stability across load currents from 100 mA to 4 A under −2 V V_CE.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum collector-emitter blocking voltage before avalanche, defining usable supply headroom in high-side switch designs
I_C	−4 A - Continuous collector current capability, supporting relay coils and lamp loads up to ~50 W at 12 V
V_CE(sat)	−190 mV typ. at −2 A/−100 mA - Low conduction loss enabling <0.4 W dissipation at full rated current
h_FE Rank	T (200–400) - Guaranteed DC current gain range at −100 mA, ensuring predictable base drive requirements
f_T	150 MHz - Sufficient gain-bandwidth for fast-switching applications such as PWM-controlled DC-DC stages
P_C @ T_c=25°C	10 W - Thermal limit when mounted on heatsink, enabling high-duty-cycle operation without derating
t_stg	650 ns - Storage time limiting maximum switching frequency in saturated-mode applications

Pinout & Package

Package: TO-126ML (JEDEC TO-126 compatible, molded plastic with metal tab for thermal mounting).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit terminal; connected to most positive rail in high-side PNP switch configuration
2	Collector	Current entry terminal; tied to load return path; electrically connected to metal tab for thermal conduction
3	Base	Control input; requires negative bias relative to emitter to turn on; low-impedance drive needed for fast switching

Key Features

Feature	Design Value
Low V_CE(sat)	−190 mV typical at −2 A ensures <0.4 W conduction loss, reducing thermal stress in compact layouts
Wide ASO	Validated safe operating area up to −4 A and −50 V enables robustness against inductive kickback in relay/lamp driving
FBET/MBIT process	Enables tight h_FE distribution (Rank T: 200–400) and stable gain across temperature and current
TO-126ML package	Molded plastic with exposed metal tab provides 10 W power dissipation at T_c = 25°C and simplified mechanical mounting

Applications

Voltage Regulator Pass Element	Relay Driver
Use Scenario: Used as series pass transistor in linear voltage regulators delivering up to 4 A output current. IC Role / Device Role / Timing Role: PNP pass element controlling output voltage via base-emitter bias; operates in active region for regulation. Use Value: Low −190 mV V_CE(sat) minimizes dropout voltage and improves efficiency at full load.	Use Scenario: Switching 12 V/24 V automotive or industrial relays with coil currents up to 3 A. IC Role / Device Role / Timing Role: High-current saturated switch turning relay coil on/off; driven by microcontroller GPIO through base resistor. Use Value: −50 V V_CEO withstands relay flyback transients; 650 ns storage time supports ≤1 kHz switching.
Lamp Driver	Electrical Equipment Power Control
Use Scenario: Driving incandescent or halogen lamps (e.g., 12 V/36 W) in test equipment or signage. IC Role / Device Role / Timing Role: Constant-current or PWM-controlled switch regulating lamp brightness and inrush current. Use Value: Wide ASO prevents secondary breakdown during cold-filament surge; −4 A rating handles 3× inrush peaks.	Use Scenario: Controlling solenoids, fans, or heaters in industrial control panels requiring discrete high-power switching. IC Role / Device Role / Timing Role: Main power switch interfacing between logic-level controller and 24–48 V DC loads. Use Value: TO-126ML metal tab enables direct heatsink mounting; −60 V V_CBO adds margin against system-level transients.

Voltage Regulator Pass Element

Relay Driver

Use Scenario: Used as series pass transistor in linear voltage regulators delivering up to 4 A output current.

IC Role / Device Role / Timing Role: PNP pass element controlling output voltage via base-emitter bias; operates in active region for regulation.

Use Value: Low −190 mV V_CE(sat) minimizes dropout voltage and improves efficiency at full load.

Use Scenario: Switching 12 V/24 V automotive or industrial relays with coil currents up to 3 A.

IC Role / Device Role / Timing Role: High-current saturated switch turning relay coil on/off; driven by microcontroller GPIO through base resistor.

Use Value: −50 V V_CEO withstands relay flyback transients; 650 ns storage time supports ≤1 kHz switching.

Lamp Driver

Electrical Equipment Power Control

Use Scenario: Driving incandescent or halogen lamps (e.g., 12 V/36 W) in test equipment or signage.

IC Role / Device Role / Timing Role: Constant-current or PWM-controlled switch regulating lamp brightness and inrush current.

Use Value: Wide ASO prevents secondary breakdown during cold-filament surge; −4 A rating handles 3× inrush peaks.

Use Scenario: Controlling solenoids, fans, or heaters in industrial control panels requiring discrete high-power switching.

IC Role / Device Role / Timing Role: Main power switch interfacing between logic-level controller and 24–48 V DC loads.

Use Value: TO-126ML metal tab enables direct heatsink mounting; −60 V V_CBO adds margin against system-level transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1210T	Higher −60 V V_CEO, same TO-126ML package, h_FE Rank T (200–400), but higher −600 mV max V_CE(sat)	Better voltage margin for 48 V systems; less suitable for low-dropout regulators due to higher saturation voltage	Select when V_CEO > −50 V is mandatory and V_CE(sat) tolerance allows ≥−600 mV
MJD2955T4	TO-220 package, −60 V V_CEO, −10 A I_C, h_FE 20–70 at −4 A, no defined h_FE rank	Higher current capacity and thermal mass; incompatible pinout and footprint; requires PCB redesign	Choose only when ≥−6 A current or enhanced heatsinking is required and layout change is acceptable

Compared with 2SB1143T, 2SB1210T offers higher voltage rating but sacrifices saturation performance, while MJD2955T4 delivers greater current and thermal headroom at the cost of board-level compatibility and gain consistency.

Availability

2SB1143T is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, and lamp drivers requiring stable component supply with consistent h_FE ranking and TO-126ML thermal performance.

Supply support for 2SB1143T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and connectivity solutions.

The 2SB1143T belongs to onsemi's general-purpose bipolar transistor product line, engineered for industrial and automotive-grade discrete switching and amplification where reliability, defined gain ranking, and low-saturation operation are critical.

FAQ

What is the h_FE range guaranteed for the 2SB1143T?

The 2SB1143T is binned to Rank T, guaranteeing a DC current gain (h_FE) of 200 to 400 when measured at V_CE = −2 V and I_C = −100 mA. This tight distribution simplifies base drive design and ensures consistent switching behavior across production lots of the 2SB1143T.

Is the 2SB1143T RoHS compliant and lead-free?

Yes, the 2SB1143T is Pb-free and RoHS compliant, as confirmed in the ordering information table which specifies "Pb Free" for the 2SB1143S variant and lists identical packaging and marking for the 2SB1143T. Both variants share the same TO-126ML package construction and environmental compliance.

What is the maximum power dissipation of the 2SB1143T at case temperature 25°C?

The 2SB1143T has a maximum collector dissipation (P_C) of 10 W when the case temperature (T_c) is maintained at 25°C. This rating assumes proper thermal coupling to a heatsink via the metal tab; at ambient temperature (T_a = 25°C), the derated value is 1.5 W without heatsinking.

How does the 2SB1143T differ from the 2SB1143S?

The 2SB1143T and 2SB1143S share identical electrical specifications and TO-126ML packaging, differing only in h_FE rank: 2SB1143S is Rank S (140–280), while 2SB1143T is Rank T (200–400). Both are Pb-free, shipped in 200 pcs./bag, and intended for interchangeable use where higher minimum gain is required.

Can the 2SB1143T be used in parallel for higher current handling?

Parallel operation of the 2SB1143T is not recommended without external emitter resistors due to h_FE and V_BE(sat) mismatches between devices. The datasheet does not specify matching or paralleling guidelines, and thermal coupling differences between TO-126ML units may cause current imbalance - use a single 2SB1143T up to its −4 A rating or select a higher-current alternative like MJD2955T4.

2SB1143T Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 1.5 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126ML

2SB1143T FAQ

1.How can I place an order for 2SB1143T through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1143T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1143T reliable?

The price and inventory of 2SB1143T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1143T is usually 5 days.

3.What payment methods are accepted for 2SB1143T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1143T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1143T?

2SB1143T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1143T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1143T?

For technical support, including 2SB1143T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1143T requirements.

6.How does Aetrix verify that 2SB1143T is sourced from the original manufacturer or authorized distributors?

All 2SB1143T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1143T meets industry standards.

7.What is the process for return or replacement of 2SB1143T?

All 2SB1143T units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1143T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1143T part is unused and in its original packaging.

Return procedure for 2SB1143T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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