onsemi 2SB1165S

Overview

2SB1165S from SANYO is a PNP epitaxial planar silicon transistor rated for 50 V V_CEO, −5 A I_C, and 1.2 W P_C at T_c = 25 °C, optimized for high-speed switching in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1165S datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE range (140–400 at I_C = −0.5 A), f_T ≥ 180 MHz, V_CE(sat) ≤ −220 mV at I_C = −3 A / I_B = −0.15 A, and TO-126LP package thermal performance.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed-emitter configuration, designed for linear amplification and saturated switching. Its electrical behavior is defined by V_CEO = −50 V, V_EBO = −6 V, and I_C pulse rating of −8 A, supporting robust turn-on/turn-off in inductive load circuits.

The transistor exhibits excellent h_FE linearity across I_C = −0.1 to −4 A and stable f_T > 130 MHz at I_C = −1 A, enabling predictable gain control in analog driver stages and fast transient response in converter topologies.

Key Specifications

Pinout & Package

SANYO TO-126LP plastic package with 3-pin vertical mounting configuration, 15.5 mm height, and integral heat-dissipating tab electrically connected to collector terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with 2SB1165S, 2SB1210 trades current capacity for enhanced voltage ruggedness in compact TO-126, while MJD2955G delivers higher current and power in TO-220 at cost of board space and thermal design complexity.

Availability

2SB1165S is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply and consistent parametric performance across production batches.

Supply support for 2SB1165S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012.

The 2SB1165S belongs to SANYO's legacy PNP/NPN switching transistor family engineered for high-reliability industrial switching applications with emphasis on low saturation voltage and fast transition times.

FAQ

What is the maximum continuous collector current rating for the 2SB1165S?

The 2SB1165S has a maximum continuous collector current rating of −5 A at T_c = 25 °C. This rating assumes proper heatsinking; derating applies above 25 °C case temperature per the PC–Ta curve in the datasheet. Operation beyond this limit risks thermal runaway and permanent damage to the 2SB1165S.

Does the 2SB1165S have a documented h_FE range, and how is it binned?

Yes, the 2SB1165S is binned into four h_FE groups: Q (140–170), R (100–140), S (82–104), and T (40–80), measured at V_CE = −2 V and I_C = −0.5 A. The suffix "S" in 2SB1165S specifically denotes the 82–104 h_FE bin, enabling predictable base drive design for moderate-gain applications.

What is the guaranteed minimum f_T for the 2SB1165S, and under what conditions is it specified?

The 2SB1165S guarantees f_T ≥ 180 MHz at V_CE = −5 V, I_C = −1 A, and f = 100 MHz test frequency. This specification ensures sufficient bandwidth for high-frequency switching applications such as 250–500 kHz DC-DC converters where gain stability is critical. The 2SB1165S maintains usable gain well beyond typical SMPS operating frequencies.

Can the 2SB1165S be used in avalanche mode, and what are its safe operating area (SOA) limits?

No, the 2SB1165S is not rated for avalanche operation. Its Absolute Maximum Ratings define only forward-biased SOA boundaries: V_CEO = −50 V, I_C = −5 A, and P_C = 1.2 W. Exceeding these limits-even momentarily-may cause irreversible failure. Designers must ensure all operating points for the 2SB1165S remain within the published SOA curves, especially during inductive switching transitions.

Is the 2SB1165S pin-compatible with the 2SD1722 NPN complement, and how are they typically paired?

Yes, the 2SB1165S (PNP) and 2SD1722 (NPN) share identical TO-126LP packaging and complementary pinouts (Emitter–Collector–Base for both), enabling direct pairing in push-pull, complementary symmetry, or quasi-complementary amplifier designs. Their matched f_T, V_CE(sat), and switching times simplify timing-critical layouts for the 2SB1165S/2SD1722 pair.