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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1167S

Name: 2SB1167S
Brand: onsemi
SKU: 2SB1167S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1167S

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2SB1167S.pdf

Description:: TRANS PNP 100V 3A TO-126LP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1167S from SANYO is a PNP epitaxial planar silicon transistor rated for 100 V V_CBO, –3 A I_C, and 1.2 W P_C at T_c = 25 °C, designed for medium-power switching applications including relay drivers and high-speed inverters in industrial control systems.

For engineers reviewing the 2SB1167S datasheet, pinout, applications, or equivalent options, key selection criteria include its –100 V V_CBO, –3 A continuous collector current, low –200 mV typical V_CE(sat) at I_C = –1.5 A / I_B = –0.15 A, high f_T of 130 MHz, and TO-126LP package thermal performance.

Technical Context

The 2SB1167S operates as a medium-voltage, medium-current PNP bipolar junction transistor with a DC current gain (h_FE) ranging from 140 to 400 at I_C = –0.5 A and V_CE = –5 V. Its fast switching capability is enabled by low saturation voltages and high transition frequency.

It features a complementary NPN counterpart (2SD1724) in identical TO-126LP packaging, supporting push-pull and H-bridge configurations. Thermal derating follows a defined P_C vs. T_a curve with no heatsink, and safe operating area (SOA) is validated up to I_CP = –6 A for 10 ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	–100 V: Maximum reverse-biased collector-base voltage before breakdown; defines upper voltage limit in off-state switching.
I_C (cont.)	–3 A: Continuous collector current rating at T_c = 25 °C; sets steady-state power handling in relay or motor driver stages.
P_C	1.2 W (T_c = 25 °C): Maximum dissipation at case temperature; requires thermal management for sustained operation above ~50 °C ambient.
V_CE(sat)	–200 mV typ. at I_C = –1.5 A / I_B = –0.15 A: Low on-state voltage drop reduces conduction loss in saturated-switching topologies.
f_T	130 MHz: Transition frequency enabling reliable operation up to ~10–20 MHz switching in optimized circuits.
h_FE	140–400 at I_C = –0.5 A / V_CE = –5 V: Wide DC gain range supports stable bias design across production lots.
V_BE(sat)	–1.0 V typ. at I_C = –1.5 A / I_B = –0.15 A: Base drive voltage requirement informs driver stage sizing and power loss.

Pinout & Package

SANYO TO-126LP package: 3-lead plastic power package with emitter (pin 1), collector (pin 2), and base (pin 3) arranged linearly; flat side facing viewer, leads down; metal tab electrically connected to collector for heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit terminal for PNP device	Connected to higher potential rail in common-emitter switch; polarity reversal critical versus NPN layout.
2 (Collector)	Current entry terminal; tied to metal tab	Electrically bonded to heatsink-compatible tab; must be isolated from chassis unless circuit ground reference permits.
3 (Base)	Control input for minority-carrier injection	Requires negative-going drive relative to emitter; base resistor sizing must ensure I_B ≥ I_C/h_FE(min) for hard saturation.

Key Features

Feature	Design Value
Low V_CE(sat)	–200 mV typical enables <150 mW conduction loss at –1.5 A, reducing thermal load in compact relay drivers.
High f_T	130 MHz supports clean edge transitions in 1–5 MHz switching converters without excessive ringing or delay.
Linear h_FE	Stable gain over I_C range simplifies bias network design and improves consistency in analog amplifier or linear regulator roles.
Fast t_on/t_off	100 ns t_on, 90 ns t_off allow sub-microsecond switching cycles, minimizing dead-time losses in bridge circuits.

Applications

Industrial Relay Drivers	DC-DC Converter Switches
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC output modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current path to system ground. Use Value: Low V_CE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in at marginal supply voltages.	Use Scenario: Synchronous rectification or main switch in non-isolated buck converter delivering 12 V @ 2 A from 48 V bus. IC Role / Device Role / Timing Role: Medium-voltage PNP switching element in totem-pole or complementary pair configuration. Use Value: 130 MHz f_T and fast t_on/t_off support efficient 500 kHz–1 MHz operation with minimal switching loss.
High-Speed Inverters	Motor Control Pre-drivers
Use Scenario: Level-shifting and current amplification stage between logic-level gate driver IC and discrete MOSFET gate in half-bridge inverter. IC Role / Device Role / Timing Role: Fast PNP/NPN pair inverting buffer with rail-to-rail swing capability. Use Value: Linear h_FE and tight V_BE(sat) tolerance ensure matched propagation delay and reduced shoot-through risk.	Use Scenario: Phase-leg pre-driver for 24 V brushed DC motor H-bridge, interfacing MCU PWM outputs to external N-channel MOSFETs. IC Role / Device Role / Timing Role: High-current PNP level shifter and current booster for high-side gate drive. Use Value: –3 A I_C rating and robust SOA handle peak gate charge currents up to 2 A without secondary breakdown.

Industrial Relay Drivers

DC-DC Converter Switches

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC output modules with microcontroller GPIO-level base control.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current path to system ground.

Use Value: Low V_CE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in at marginal supply voltages.

Use Scenario: Synchronous rectification or main switch in non-isolated buck converter delivering 12 V @ 2 A from 48 V bus.

IC Role / Device Role / Timing Role: Medium-voltage PNP switching element in totem-pole or complementary pair configuration.

Use Value: 130 MHz f_T and fast t_on/t_off support efficient 500 kHz–1 MHz operation with minimal switching loss.

High-Speed Inverters

Motor Control Pre-drivers

Use Scenario: Level-shifting and current amplification stage between logic-level gate driver IC and discrete MOSFET gate in half-bridge inverter.

IC Role / Device Role / Timing Role: Fast PNP/NPN pair inverting buffer with rail-to-rail swing capability.

Use Value: Linear h_FE and tight V_BE(sat) tolerance ensure matched propagation delay and reduced shoot-through risk.

Use Scenario: Phase-leg pre-driver for 24 V brushed DC motor H-bridge, interfacing MCU PWM outputs to external N-channel MOSFETs.

IC Role / Device Role / Timing Role: High-current PNP level shifter and current booster for high-side gate drive.

Use Value: –3 A I_C rating and robust SOA handle peak gate charge currents up to 2 A without secondary breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1218	Higher V_CBO (–120 V), same I_C (–3 A), lower f_T (80 MHz), TO-126 package	Better suited for 100 V+ bus applications but slower switching; not ideal for >300 kHz designs	Select when higher voltage margin is required and speed is secondary to ruggedness.
MJD2955T4	Same V_CBO (–100 V), higher I_C (–10 A), higher P_C (15 W), TO-220 package	Requires heatsink for full current; larger footprint; better for high-current, low-frequency switching	Choose for higher current loads where board space and thermal mass permit TO-220 mounting.

Compared with 2SB1167S, 2SB1218 trades speed for voltage headroom while MJD2955T4 scales current and power at the cost of size and thermal complexity-making 2SB1167S optimal for compact, medium-speed, medium-power switching where TO-126LP's thermal profile and footprint are critical.

Availability

2SB1167S is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, high-speed inverters, and motor control pre-drivers requiring stable component supply and long-term manufacturability.

Supply support for 2SB1167S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power transistors, optoelectronics, and analog ICs before its semiconductor business was acquired by ON Semiconductor in 2011.

The 2SB1167S belongs to SANYO's legacy PNP/NPN complementary transistor family designed for robust, cost-effective medium-power switching in industrial controls and power conversion equipment.

FAQ

What is the maximum continuous collector current rating for the 2SB1167S?

The 2SB1167S has a maximum continuous collector current (I_C) rating of –3 A at case temperature T_c = 25 °C. Derating is required above this temperature per the published P_C vs. T_a curve, and pulse current up to –6 A is permitted for durations ≤10 ms under specified test conditions. This rating defines its suitability for medium-power switching tasks such as relay coil driving and DC-DC converter stages.

Does the 2SB1167S have a built-in heatsink tab, and how is it electrically configured?

Yes, the 2SB1167S uses the SANYO TO-126LP package with a metal tab that is electrically connected to the collector (pin 2). This allows direct mechanical attachment to an external heatsink while maintaining electrical isolation unless the heatsink is intentionally grounded to the collector node. The tab must be insulated from other circuit potentials unless design intent specifies collector-referenced thermal coupling.

What is the typical V_CE(sat) of the 2SB1167S under standard switching conditions?

The typical collector-to-emitter saturation voltage (V_CE(sat)) of the 2SB1167S is –200 mV at I_C = –1.5 A and I_B = –0.15 A (I_C/I_B = 10), measured at T_a = 25 °C. This low saturation voltage directly reduces conduction losses in saturated-switching applications like relay drivers and ensures sufficient voltage margin across the load under nominal supply conditions.

Is the 2SB1167S pin-compatible with the 2SD1724 NPN transistor?

No-the 2SB1167S (PNP) and 2SD1724 (NPN) share identical TO-126LP packaging and pinout order (emitter–collector–base), but they are complementary-not pin-compatible-devices. Their electrical polarities are inverted: the 2SB1167S emitter is pin 1 and collector is pin 2, whereas the 2SD1724 emitter is also pin 1 and collector is pin 2, but voltage/current conventions are opposite. They are intended for use together in push-pull or H-bridge configurations, not as drop-in replacements.

What is the guaranteed minimum h_FE for the 2SB1167S at I_C = –0.5 A?

The 2SB1167S is binned by h_FE at I_C = –0.5 A and V_CE = –5 V, with the lowest grade (Q) specifying h_FE ≥ 140. Other grades (R, S, T) guarantee minimum h_FE values of 200, 280, and 400 respectively. Designers should select based on required drive margin and stability-using the Q-grade 2SB1167S ensures at least 140× current gain under those conditions, enabling conservative base resistor sizing.

2SB1167S Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1.2 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126LP

2SB1167S FAQ

1.How can I place an order for 2SB1167S through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1167S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1167S reliable?

The price and inventory of 2SB1167S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1167S is usually 5 days.

3.What payment methods are accepted for 2SB1167S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1167S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1167S?

2SB1167S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1167S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1167S?

For technical support, including 2SB1167S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1167S requirements.

6.How does Aetrix verify that 2SB1167S is sourced from the original manufacturer or authorized distributors?

All 2SB1167S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1167S meets industry standards.

7.What is the process for return or replacement of 2SB1167S?

All 2SB1167S units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1167S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1167S part is unused and in its original packaging.

Return procedure for 2SB1167S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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