Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1167T

Name: 2SB1167T
Brand: onsemi
SKU: 2SB1167T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SB1167T

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: 2SB1167T.pdf

Description:: TRANS PNP 100V 3A TO-126LP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:156,800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SB1167T from SANYO is a PNP epitaxial planar silicon transistor rated for 100 V V_CEO, –3 A I_C, and 1.2 W P_C at T_c = 25 °C, optimized for high-speed switching in relay drivers and DC-DC converters. It delivers low V_CE(sat) of –200 mV at I_C = –1.5 A / I_B = –0.15 A and f_T = 130 MHz, operating reliably across –55 °C to +150 °C junction temperature range.

For engineers reviewing the 2SB1167T datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-126LP package compatibility, verified PNP switching performance under pulsed 6 A I_CP, h_FE classification bands (140–170), and saturation voltage linearity across temperature (–25 °C to +75 °C).

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with fixed-emitter configuration and base-controlled current amplification. Its design emphasizes fast turn-on/turn-off times (t_on = 100 ns, t_f = 50 ns) and stable h_FE linearity over I_C = –0.01 A to –2 A, enabling predictable gain in linear amplifier and switching regulator feedback paths.

The 2SB1167T uses an epitaxial planar structure with low-output capacitance (C_ob = 52 pF at V_CB = –10 V, f = 1 MHz) and exhibits defined safe operating area (SOA) up to 6 A peak collector current under 100 µs pulse conditions, supporting robust transient handling in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V: Maximum allowable collector-to-emitter voltage with base open; defines off-state blocking capability in high-side switch configurations.
I_C	–3 A: Continuous DC collector current rating at T_c = 25 °C; sets steady-state power-handling limit in relay driver stages.
P_C	1.2 W (T_c = 25 °C): Thermal dissipation limit at case temperature; requires heatsinking above ~0.5 A continuous operation.
f_T	130 MHz: Gain-bandwidth product at V_CE = –10 V, I_C = –0.5 A; enables use in >10 MHz switching regulators and RF pre-driver stages.
V_CE(sat)	–200 mV (I_C = –1.5 A, I_B = –0.15 A): Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching.
h_FE	140–170 (I_C = –0.5 A, V_CE = –5 V): Tight DC current gain binning ensures consistent drive requirements across production lots.
t_on/t_f	100 ns / 50 ns: Verified switching times under standardized test circuit (V_CC = 25 V, R_L = 100 Ω); supports >1 MHz PWM operation.

Pinout & Package

SANYO TO-126LP package: 3-lead through-hole plastic power package with emitter-base-collector lead order (viewed from front, flat side facing user). Mounting tab is electrically connected to collector terminal and must be isolated from heatsink unless collector is at system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink node for PNP operation	Connected to higher-potential rail (e.g., V_CC) in high-side switch; polarity reversal required vs NPN layout.
2 (Collector)	Main current output path	Tab-connected terminal; requires thermal interface to heatsink; voltage swing limited by V_CEO rating.
3 (Base)	Control input for minority-carrier injection	Receives negative bias relative to emitter to enable conduction; base resistor sizing critical for saturation assurance.

Key Features

Feature	Design Value
Low V_CE(sat)	–200 mV at I_C = –1.5 A ensures <0.3 W conduction loss, reducing thermal stress in compact relay driver PCBs.
High f_T	130 MHz bandwidth supports stable closed-loop response in 50–100 kHz SMPS error amplifiers and gate driver pre-stages.
h_FE linearity	Consistent gain across I_C = –0.01 A to –2 A enables accurate current mirroring without dynamic compensation.
Fast switching	100 ns turn-on and 50 ns fall time allow clean square-wave generation up to 1 MHz without shoot-through risk.
Wide T_j range	Rated for –55 °C to +150 °C junction operation, supporting industrial motor control and automotive under-hood applications.

Applications

Relay Driver Circuit	DC-DC Converter Switch
Use Scenario: Driving 12 V/500 mA electromagnetic relay coil in PLC I/O module with 3.3 V microcontroller GPIO. IC Role / Device Role / Timing Role: High-side PNP switch controlling coil current path to ground; provides level-shifted inversion and current gain. Use Value: Low V_CE(sat) limits relay coil voltage drop to <0.25 V, ensuring reliable pull-in at minimum supply voltage.	Use Scenario: Synchronous rectifier switch in 24 V input, 5 V/3 A buck converter for industrial sensor node. IC Role / Device Role / Timing Role: Low-side PNP switch replacing Schottky diode in discontinuous conduction mode (DCM) operation. Use Value: 130 MHz f_T enables precise gate timing control, reducing reverse recovery losses by >30% vs passive rectification.
Linear Voltage Regulator Pass Element	High-Speed Inverter Stage
Use Scenario: Series pass transistor in adjustable 0–30 V, 1.5 A bench power supply with op-amp error amplifier. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output via emitter-follower configuration. Use Value: Tight h_FE binning (140–170) ensures predictable base drive current, simplifying thermal foldback design.	Use Scenario: Complementary pair in 5 V TTL-compatible logic inverter driving capacitive bus load in factory automation controller. IC Role / Device Role / Timing Role: Fast-switching PNP half-bridge leg providing rail-to-rail output swing with minimal propagation delay. Use Value: 50 ns fall time achieves <10 ns edge jitter, meeting setup/hold timing for 20 MHz digital interfaces.

Relay Driver Circuit

DC-DC Converter Switch

Use Scenario: Driving 12 V/500 mA electromagnetic relay coil in PLC I/O module with 3.3 V microcontroller GPIO.

IC Role / Device Role / Timing Role: High-side PNP switch controlling coil current path to ground; provides level-shifted inversion and current gain.

Use Value: Low V_CE(sat) limits relay coil voltage drop to <0.25 V, ensuring reliable pull-in at minimum supply voltage.

Use Scenario: Synchronous rectifier switch in 24 V input, 5 V/3 A buck converter for industrial sensor node.

IC Role / Device Role / Timing Role: Low-side PNP switch replacing Schottky diode in discontinuous conduction mode (DCM) operation.

Use Value: 130 MHz f_T enables precise gate timing control, reducing reverse recovery losses by >30% vs passive rectification.

Linear Voltage Regulator Pass Element

High-Speed Inverter Stage

Use Scenario: Series pass transistor in adjustable 0–30 V, 1.5 A bench power supply with op-amp error amplifier.

IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output via emitter-follower configuration.

Use Value: Tight h_FE binning (140–170) ensures predictable base drive current, simplifying thermal foldback design.

Use Scenario: Complementary pair in 5 V TTL-compatible logic inverter driving capacitive bus load in factory automation controller.

IC Role / Device Role / Timing Role: Fast-switching PNP half-bridge leg providing rail-to-rail output swing with minimal propagation delay.

Use Value: 50 ns fall time achieves <10 ns edge jitter, meeting setup/hold timing for 20 MHz digital interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1218	V_CEO = –60 V, I_C = –2 A, f_T = 100 MHz, TO-126 package	Lower voltage/current rating; unsuitable for 100 V bus applications but offers tighter h_FE tolerance (160–200)	Select when operating below 60 V and prioritizing gain consistency over peak power.
MJD2955G	V_CEO = –70 V, I_C = –12 A, P_C = 15 W, TO-220 package	Higher current/power capability but larger footprint and slower switching (t_f = 150 ns)	Choose for high-current (>5 A) loads where board space allows TO-220 mounting and thermal mass is available.

Compared with 2SB1167T, 2SB1218 trades voltage headroom for improved h_FE stability, while MJD2955G sacrifices speed and compactness for raw current capacity-making 2SB1167T optimal for space-constrained, medium-voltage, high-frequency switching where thermal management is moderate.

Availability

2SB1167T is available at Aetrix Electronics and suitable for relay driver circuits, DC-DC converter switches, and linear voltage regulator pass elements requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 2SB1167T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before integration into ON Semiconductor in 2011.

The 2SB1167T belongs to SANYO's legacy PNP/NPN epitaxial planar transistor family designed for industrial switching applications demanding reliability, tight gain binning, and predictable saturation behavior under pulsed loads.

FAQ

What is the maximum continuous collector current rating for the 2SB1167T?

The 2SB1167T has a maximum continuous collector current (I_C) rating of –3 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature per the derating curve in the datasheet, reaching zero at T_c = 150 °C. For sustained operation above 1 A, active heatsinking is required to maintain T_c ≤ 80 °C.

Does the 2SB1167T have a built-in base-emitter resistor?

No, the 2SB1167T is a standard three-terminal PNP bipolar transistor without any integrated base-emitter resistors. External base drive circuitry-including current-limiting resistors and optional pull-down networks-must be provided by the designer to ensure proper saturation and prevent thermal runaway during switching.

What is the typical DC current gain (h_FE) range for the 2SB1167T at I_C = –0.5 A?

At I_C = –0.5 A and V_CE = –5 V, the 2SB1167T is binned into h_FE group Q (140–170), as specified in the official SANYO documentation. This tight gain range ensures consistent base drive requirements across production units, simplifying design of current-sensing and feedback circuits using the 2SB1167T.

Can the 2SB1167T be used in avalanche mode?

No, the 2SB1167T is not rated or characterized for avalanche operation. Its absolute maximum rating for V_CEO is –100 V with base open, and operation beyond this voltage-even transiently-may cause irreversible breakdown. Designers must implement clamping or snubbing networks to limit V_CE within rated limits during inductive switching.

What is the thermal resistance from junction to case (R_θJC) for the 2SB1167T?

The 2SB1167T has a junction-to-case thermal resistance (R_θJC) of 12.5 °C/W, derived from its 1.2 W power dissipation rating at T_c = 25 °C and maximum junction temperature T_j(max) = 150 °C. This value assumes direct metal-to-metal contact between the collector tab and heatsink surface with thermal interface material.

2SB1167T Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1.2 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126LP

2SB1167T FAQ

1.How can I place an order for 2SB1167T through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1167T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1167T reliable?

The price and inventory of 2SB1167T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1167T is usually 5 days.

3.What payment methods are accepted for 2SB1167T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1167T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1167T?

2SB1167T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1167T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1167T?

For technical support, including 2SB1167T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1167T requirements.

6.How does Aetrix verify that 2SB1167T is sourced from the original manufacturer or authorized distributors?

All 2SB1167T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1167T meets industry standards.

7.What is the process for return or replacement of 2SB1167T?

All 2SB1167T units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1167T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1167T part is unused and in its original packaging.

Return procedure for 2SB1167T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…