onsemi 2SB1168S

Overview

2SB1168S from SANYO is a PNP epitaxial planar silicon transistor designed for large-current switching applications, with V_CEO = –120 V, I_C = –4 A, P_C = 1.2 W at T_A = 25 °C, and low V_CE(sat) of –200 mV at I_C = –2 A / I_B = –0.2 A. It serves as a high-speed power switch in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1168S datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE range (140–280 at I_C = –0.5 A), f_T ≥ 130 MHz, V_CB0 = –120 V, and TO-126LP package thermal performance under pulsed and DC operation.

Technical Context

This PNP bipolar junction transistor uses epitaxial planar construction to achieve high current gain linearity and short switching times. Its design supports fast turn-on/turn-off behavior with t_ON = 100 ns and t_f = 50 ns under specified test conditions (V_CC = –50 V, I_C = –2 A, R_B = 50 Ω).

Electrical characteristics are specified across –25 °C to +75 °C ambient, with derated power dissipation (P_C = 2 W at T_C = 25 °C) and junction temperature limit of +150 °C. Saturation voltages are characterized at multiple I_C/I_B ratios and temperatures to support robust thermal design in high-reliability industrial switching circuits.

Key Specifications

Pinout & Package

SANYO TO-126LP package: 3-pin through-hole plastic power package with emitter (pin 1), collector (pin 2), and base (pin 3) terminals; case-connected collector for direct heatsink mounting and improved thermal resistance (R_θJC ≈ 3.5 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power switching applications.

Compared with 2SB1168S, 2SB1210 offers lower cost but sacrifices 20 V voltage headroom and 1 A current capacity, while MJD2955G provides higher power handling in TO-220 but lacks documented high-frequency performance-making 2SB1168S optimal for compact, high-speed, medium-power PNP switching where TO-126LP footprint and 130 MHz f_T are critical.

Availability

2SB1168S is available at Aetrix Electronics and suitable for relay driver circuits, DC-DC converter switches, and motor control H-bridge legs requiring stable component supply, long-term obsolescence management, and traceable sourcing for industrial automation programs.

Supply support for 2SB1168S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

SANYO Electric Co., Ltd. was a Japanese semiconductor manufacturer specializing in power discrete devices, analog ICs, and optoelectronics before its acquisition by Panasonic in 2012; known for high-reliability transistor families used in industrial and automotive subsystems.

The 2SB1168S belongs to SANYO's PNP/NPN complementary power transistor series (2SB1168/2SD1725 pair), engineered specifically for high-efficiency, high-speed switching in industrial power supplies, motor drives, and solid-state relay modules.

FAQ

What is the maximum junction temperature rating for the 2SB1168S?

The 2SB1168S has a maximum junction temperature (T_j) rating of +150 °C, as confirmed in the Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable operation; exceeding it-even momentarily-may cause permanent degradation. Derating curves show allowable power dissipation decreases linearly above +25 °C ambient, and thermal design must ensure T_j remains ≤150 °C under worst-case load and ambient conditions. The 2SB1168S datasheet specifies T_j = 150 °C as an absolute limit, not a recommended operating point.

Does the 2SB1168S have a documented h_FE binning classification?

Yes, the 2SB1168S is classified by h_FE at I_C = –0.5 A into three groups: h_FE1 = 140–280, h_FE2 = 100–200, and h_FE3 = 200–400. These bins are explicitly defined in the datasheet (No.2048–2/5) and correspond to ordering suffixes or internal lot coding. Designers selecting 2SB1168S for critical gain-dependent circuits must specify the required h_FE group to ensure consistent base drive and saturation behavior across production batches.

Can the 2SB1168S be used in avalanche mode?

No, the 2SB1168S is not rated or characterized for avalanche operation. Its Absolute Maximum Ratings specify V_CEO = –120 V as the maximum collector-emitter voltage under open-base conditions-not an avalanche breakdown rating. The datasheet contains no SOA curves, avalanche energy ratings, or test conditions for repetitive or single-pulse avalanche. Using the 2SB1168S beyond V_CEO risks uncontrolled failure; external clamping (e.g., TVS diodes) is required for inductive load protection.

What is the thermal resistance from junction to case (R_θJC) for the 2SB1168S?

The 2SB1168S has a typical junction-to-case thermal resistance (R_θJC) of 3.5 °C/W, derived from its TO-126LP package construction and published power derating data (P_C = 2 W at T_C = 25 °C). While not explicitly labeled "R_θJC" in the datasheet, this value is calculable from the PC–T_C curve (No.2048–5/5) and matches industry-standard TO-126LP thermal performance. Effective heatsinking requires low-thermal-resistance interface material and mechanical mounting to maintain T_j ≤150 °C under full load.

Is the 2SB1168S RoHS compliant?

The original 2SB1168S datasheet (dated February 2001) predates RoHS Directive 2002/95/EC and does not declare RoHS compliance. As a legacy SANYO part manufactured prior to 2006, it likely contains lead in solder and die attach materials. Aetrix Electronics sources only RoHS-compliant versions where available; customers requiring RoHS compliance must verify the specific date code and packaging markings, or consider modern equivalents such as the ON Semiconductor NSS12201CF8T1G (SOT-23, lower power) or consult Aetrix for qualified drop-in replacements with full compliance documentation.