onsemi 2SB1202S-E

Overview

2SB1202S-E from onsemi is a PNP bipolar junction transistor rated for −50 V V_CEO, −3 A I_C, and 1 W at T_C = 25 °C, featuring low V_CE(sat) of −0.35 V at I_C = −2 A / I_B = −100 mA. It uses FBET/MBIT processes, delivers h_FE = 100–560 (rank-dependent), and is housed in the IPAK (TP) package. It is commonly used in relay drivers and voltage regulators where compact high-current switching is required.

For engineers reviewing the 2SB1202S-E datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, −50 V breakdown rating, low saturation voltage under high current, fast switching (t_on = 70 ns, t_f = 35 ns), and TP package thermal performance at 15 W when mounted to heatsink.

Technical Context

This PNP BJT is optimized for medium-power linear and switching applications with strict V_CE(sat) and switching speed requirements. Its h_FE is specified across two test conditions: 100–560 at I_C = −100 mA and ≥35 at I_C = −3 A, indicating robust gain retention under load. The device supports pulse currents up to −6 A and operates reliably up to T_J = 150 °C.

The 2SB1202S-E shares the same die and process platform with 2SD1802 (NPN complement), enabling matched pair usage in push-pull or complementary driver circuits. Its Cob = 25 pF at V_CB = −10 V and f_T = 150 MHz support moderate-frequency switching without excessive Miller effect.

Key Specifications

Pinout & Package

2SB1202S-E is packaged in IPAK (TO-251 variant), case outline 369AJ, with three terminals in straight-line configuration: Collector (Pin 1), Base (Pin 2), Emitter (Pin 3). The package features an exposed metal tab (Collector-connected) for thermal enhancement and mechanical mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Compared with MJD2955G and 2SA1943, the 2SB1202S-E offers superior h_FE consistency, lower V_CE(sat), and integrated thermal path via exposed collector-making it more efficient and compact for 3 A switching in space-constrained industrial and automotive modules.

Availability

2SB1202S-E is available at Aetrix Electronics and suitable for voltage regulators, relay drivers, lamp drivers, and electrical equipment requiring stable component supply and RoHS-compliant manufacturing.

Supply support for 2SB1202S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2SB1202S-E belongs to onsemi's legacy bipolar power transistor family, engineered for high-reliability medium-current switching in industrial controls and power management systems where cost, thermal performance, and Pb-free compliance are critical.

FAQ

What is the package type and pin configuration of the 2SB1202S-E?

The 2SB1202S-E uses the IPAK (TO-251 variant), case 369AJ, with three terminals in linear order: Pin 1 (Collector/tab), Pin 2 (Base), Pin 3 (Emitter). The exposed metal tab is electrically connected to the collector and serves as the primary thermal path. This configuration is standardized across onsemi's TP-series PNP transistors.

Is the 2SB1202S-E still in active production?

No-the 2SB1202S-E is marked as discontinued in the official onsemi datasheet revision 1 (April 2026). However, Aetrix Electronics maintains legacy inventory and supports long-term supply for existing designs through controlled allocation and cross-reference guidance for functional alternatives.

What does the "S" suffix in 2SB1202S-E indicate?

The "S" denotes the h_FE rank bin: 140–280 at V_CE = −2 V and I_C = −100 mA. This binning enables predictable gain matching with complementary NPN devices like 2SD1802S-E, supporting balanced push-pull or differential amplifier designs where gain symmetry matters.

Can the 2SB1202S-E replace the 2SB1202T-E in a design?

Yes-both share identical electrical specifications and package; the "T" suffix indicates h_FE = 200–400 (rank T bin). Substitution is electrically valid if the circuit tolerates the higher gain range, though base drive may require minor adjustment to maintain consistent saturation under varying temperature and load conditions.

What is the maximum pulsed collector current rating for the 2SB1202S-E?

The 2SB1202S-E supports I_CP = −6 A under pulse conditions, defined per datasheet with duty cycle ≤1% and pulse width ≤300 μs. This rating enables reliable handling of inductive kickback and relay coil inrush without secondary breakdown, provided layout minimizes stray inductance.