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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1202T-E

Name: 2SB1202T-E
Brand: onsemi
SKU: 2SB1202T-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1202T-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SB1202T-E.pdf

Description:: TRANS PNP 50V 3A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1202T-E from onsemi is a PNP bipolar junction transistor rated for −50 V V_CEO, −3 A I_C, and 1 W at T_C = 25 °C, featuring low V_CE(sat) of −0.35 V at I_C = −2 A / I_B = −100 mA and fast switching (t_on = 70 ns, t_f = 35 ns), used in relay drivers and voltage regulators.

For engineers reviewing the 2SB1202T-E datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed h_FE rank T (200–400 at I_C = −100 mA), Pb-free TP package compliance, and validated ASO performance under pulsed conditions.

Technical Context

This PNP transistor employs FBET and MBIT processes to achieve wide safe operating area (ASO) and low saturation voltage. Its electrical behavior is defined by V_CEO = −50 V, I_C = −3 A continuous, and f_T = 150 MHz at V_CE = −10 V / I_C = −50 mA - enabling use in medium-power linear and switching applications up to several hundred kHz.

The device operates with fixed polarity: emitter is positive relative to collector and base in normal bias. Pinout follows standard TP (IPAK) configuration with collector tab, base, and emitter terminals - thermally optimized for PCB-mounted heat dissipation at T_J ≤ 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - maximum allowable collector-to-emitter voltage before breakdown in common-emitter configuration.
I_C	−3 A - continuous DC collector current rating at T_C = 25 °C; supports robust load switching in power control stages.
V_CE(sat)	−0.35 V (typ) at I_C = −2 A / I_B = −100 mA - enables <1.0 W conduction loss in saturated switch operation.
h_FE	200–400 (Rank T) at V_CE = −2 V / I_C = −100 mA - ensures predictable base drive requirements for gain-controlled amplification or switching.
f_T	150 MHz - usable bandwidth for small-signal amplification or high-speed digital switching up to ~50 MHz practical edge rates.
t_f	35 ns - fall time measured under specified test circuit; determines minimum off-time in PWM or pulse applications.
P_C @ T_C = 25 °C	1 W - thermal limit at case temperature; requires heatsinking or layout derating above ambient.

Pinout & Package

2SB1202T-E uses the IPAK (TP) package (Case 369AJ), with exposed collector tab for thermal conduction and mechanical mounting. The package is Pb-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main current-carrying terminal, electrically connected to metal tab	Provides primary thermal path to PCB copper; must be electrically isolated from other potentials unless referenced to system ground.
Base	Control electrode for minority-carrier injection	Receives forward-biased current to turn on transistor; requires current-limiting resistor in most driver circuits.
Emitter	Source of majority carriers (holes) in PNP operation	Typically tied to higher potential rail; defines reference point for V_BE and V_CE measurements.

Key Features

Feature	Design Value
Low V_CE(sat)	−0.35 V typical at I_C = −2 A - reduces conduction losses and self-heating in high-current switching nodes.
Wide ASO	Validated safe operating area across voltage/current combinations - supports reliable operation under transient overload without secondary breakdown.
Fast switching	t_on = 70 ns, t_f = 35 ns - enables efficient operation in PWM-based regulators and solid-state relays up to 100 kHz.
Rank T h_FE	200–400 at I_C = −100 mA - tight DC gain binning simplifies base drive design and improves batch consistency.
Pb-free TP package	IPAK (Case 369AJ) with RoHS-compliant finish - compatible with lead-free reflow profiles and industrial environmental requirements.

Applications

Relay Driver Circuit	Voltage Regulator Output Stage
Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current at 24 VDC. IC Role / Device Role / Timing Role: PNP switch controlling relay coil return path to ground; operates in saturation during active state. Use Value: Low V_CE(sat) minimizes power loss and coil voltage drop, ensuring reliable relay pull-in even at low supply margins.	Use Scenario: Series pass element in adjustable linear voltage regulator delivering up to 3 A output. IC Role / Device Role / Timing Role: High-current PNP series pass transistor regulating output by modulating base-emitter voltage. Use Value: Wide ASO and 150 MHz f_T support stable loop compensation and transient response under varying load conditions.
Lamp Driver (Incandescent/LED)	Electrical Equipment Power Control
Use Scenario: Switching 12–24 V incandescent lamps or high-current LED arrays in industrial lighting panels. IC Role / Device Role / Timing Role: Medium-power PNP switch sinking lamp current through emitter to supply rail. Use Value: Fast t_f = 35 ns prevents visible flicker during PWM dimming; Rank T h_FE ensures consistent brightness across production units.	Use Scenario: Load switching in programmable logic controller (PLC) output modules handling solenoids, valves, or motor starters. IC Role / Device Role / Timing Role: Final-stage PNP power switch interfacing microcontroller GPIO to industrial loads. Use Value: −50 V V_CEO withstands inductive kickback; 150 °C T_J rating supports operation in enclosed, high-ambient enclosures.

Relay Driver Circuit

Voltage Regulator Output Stage

Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current at 24 VDC.

IC Role / Device Role / Timing Role: PNP switch controlling relay coil return path to ground; operates in saturation during active state.

Use Value: Low V_CE(sat) minimizes power loss and coil voltage drop, ensuring reliable relay pull-in even at low supply margins.

Use Scenario: Series pass element in adjustable linear voltage regulator delivering up to 3 A output.

IC Role / Device Role / Timing Role: High-current PNP series pass transistor regulating output by modulating base-emitter voltage.

Use Value: Wide ASO and 150 MHz f_T support stable loop compensation and transient response under varying load conditions.

Lamp Driver (Incandescent/LED)

Electrical Equipment Power Control

Use Scenario: Switching 12–24 V incandescent lamps or high-current LED arrays in industrial lighting panels.

IC Role / Device Role / Timing Role: Medium-power PNP switch sinking lamp current through emitter to supply rail.

Use Value: Fast t_f = 35 ns prevents visible flicker during PWM dimming; Rank T h_FE ensures consistent brightness across production units.

Use Scenario: Load switching in programmable logic controller (PLC) output modules handling solenoids, valves, or motor starters.

IC Role / Device Role / Timing Role: Final-stage PNP power switch interfacing microcontroller GPIO to industrial loads.

Use Value: −50 V V_CEO withstands inductive kickback; 150 °C T_J rating supports operation in enclosed, high-ambient enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1202S-E	Same die, Rank S h_FE (140–280) vs. Rank T (200–400); identical TP package and absolute ratings.	Slightly lower gain consistency at low I_C; may require adjusted base drive in precision current-source designs.	Select 2SB1202S-E when cost sensitivity outweighs need for tighter h_FE tolerance in non-critical switching.
MJD2955G	TO-220 package, −60 V V_CEO, −10 A I_C, higher P_C = 115 W; h_FE min 20 at I_C = −4 A.	Higher power capability but larger footprint and slower switching (t_f ≈ 1.5 μs); not suitable for space-constrained or high-frequency designs.	Choose MJD2955G only when >3 A continuous current or TO-220 mounting is required; not a drop-in replacement.

Compared with 2SB1202S-E, the 2SB1202T-E offers higher and tighter h_FE binning for improved base drive predictability; versus MJD2955G, it trades raw power headroom for compact TP packaging and faster switching - making it optimal for board-space-limited 2–3 A switching applications.

Availability

2SB1202T-E is available at Aetrix Electronics and suitable for relay drivers, voltage regulators, and lamp drivers requiring stable component supply, long-term industrial availability, and RoHS-compliant manufacturing.

Supply support for 2SB1202T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SB1202T-E belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for medium-current switching and linear regulation in industrial control and power management systems.

FAQ

What is the h_FE range guaranteed for 2SB1202T-E?

The 2SB1202T-E is binned to Rank T, guaranteeing DC current gain (h_FE) between 200 and 400 when measured at V_CE = −2 V and I_C = −100 mA. This tighter specification than Rank S or R supports more deterministic base drive design in production hardware using the 2SB1202T-E.

Is 2SB1202T-E pin-compatible with 2SB1202S-E?

Yes - the 2SB1202T-E and 2SB1202S-E share identical IPAK (TP) package pinout, absolute maximum ratings, and electrical characteristics except for h_FE binning. Both use Collector (tab), Base, and Emitter terminals in the same physical arrangement, allowing direct substitution where gain tolerance permits.

What is the maximum pulsed collector current for 2SB1202T-E?

The 2SB1202T-E supports I_CP = −6 A under pulsed conditions, as specified in the Absolute Maximum Ratings table. This rating applies to short-duration pulses with duty cycle ≤1% and peak duration ≤20 μs, enabling surge handling in relay coil or lamp inrush scenarios.

Does 2SB1202T-E have a built-in protection diode or ESD structure?

No - the 2SB1202T-E is a bare bipolar transistor without integrated protection diodes or ESD structures. External flyback diodes are required across inductive loads, and PCB-level ESD safeguards should be implemented per IEC 61000-4-2 when used in accessible interfaces.

What is the thermal resistance from junction to case (R_θJC) for 2SB1202T-E?

The datasheet does not specify R_θJC for the 2SB1202T-E. However, its IPAK (TP) package (Case 369AJ) has an exposed collector tab optimized for thermal conduction; design guidance recommends using ≥100 mm² of 2-oz copper connected directly to the tab to achieve effective thermal management below T_J = 150 °C.

2SB1202T-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 100mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 100mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 150MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SB1202T-E FAQ

1.How can I place an order for 2SB1202T-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1202T-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1202T-E reliable?

The price and inventory of 2SB1202T-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1202T-E is usually 5 days.

3.What payment methods are accepted for 2SB1202T-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1202T-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1202T-E?

2SB1202T-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1202T-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1202T-E?

For technical support, including 2SB1202T-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1202T-E requirements.

6.How does Aetrix verify that 2SB1202T-E is sourced from the original manufacturer or authorized distributors?

All 2SB1202T-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1202T-E meets industry standards.

7.What is the process for return or replacement of 2SB1202T-E?

All 2SB1202T-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1202T-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1202T-E part is unused and in its original packaging.

Return procedure for 2SB1202T-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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