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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1203S-FTT-TL-E

Name: 2SB1203S-FTT-TL-E
Brand: onsemi
SKU: 2SB1203S-FTT-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1203S-FTT-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1203S-FTT-TL-E.pdf

Description:: TRANS PNP 50V 5A 2-TP-FA

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Product details

Overview

2SB1203S-FTT-TL-E from onsemi is a PNP bipolar junction transistor rated for –50 V V_CEO, –5 A I_C, and low 220–400 mV V_CE(sat) at –3 A/–0.15 A drive, optimized for high-current switching in relay drivers and DC-DC converters. It uses the TP-FA package (JEDEC TO-252, SC-63) with 4 terminals and supports fast switching (t_on = 50 ns, t_f = 20 ns).

For engineers reviewing the 2SB1203S-FTT-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed –50 V/–5 A ratings, TP-FA thermal performance (20 W @ T_c = 25°C), and documented h_FE linearity across 70–400 range.

Technical Context

This device operates as a medium-power PNP switch with dual-collector configuration (pins 2 and 4 both connected to collector), enabling robust current handling and thermal dissipation in surface-mount power stages. Its f_T of 130–180 MHz and low Cob of 40–60 pF support stable high-speed switching up to several hundred kHz in hard-switched topologies.

The TP-FA package features an exposed thermal pad and 4-terminal layout that separates base (pin 1) and emitter (pin 3) from dual collectors (pins 2 & 4), reducing parasitic inductance and improving layout control for EMI-sensitive applications like motor drivers and SMPS output stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–50 V - Maximum safe collector-emitter voltage under open-base conditions; defines breakdown margin in high-side PNP switch configurations.
I_C	–5 A - Continuous DC collector current rating; supports sustained load switching without derating at T_c ≤ 25°C.
V_CE(sat)	220–400 mV @ –3 A/–0.15 A - Low saturation voltage reduces conduction loss and heat generation in power stage designs.
f_T	130–180 MHz - Gain-bandwidth product enabling reliable operation in high-frequency switching circuits up to ~10 MHz small-signal amplification.
t_on/t_f	50 ns / 20 ns - Fast turn-on and fall times minimize switching transition losses in PWM-driven applications.
h_FE	70–400 - Wide DC current gain range across IC = –0.5 A to –4 A; ensures predictable base drive requirements over operating current span.
P_C @ T_c	20 W - Collector power dissipation at case temperature 25°C; enables high-power density mounting on thermally enhanced PCBs.

Pinout & Package

2SB1203S-FTT-TL-E uses the TP-FA surface-mount package (JEDEC TO-252, SC-63), featuring an exposed thermal pad and four terminals in a compact 7.0 × 5.0 mm outline with 0.85 mm max height. The package supports automated reflow assembly and provides superior thermal resistance compared to standard TP variants.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires –0.15 A base current to saturate at –3 A collector current.
2	Collector	Main high-current output terminal; electrically tied to pin 4 for parallel current path and thermal sharing.
3	Emitter	Common reference node for PNP operation; connects to higher potential rail in high-side switch configurations.
4	Collector	Secondary collector terminal; identical electrical function to pin 2, enabling dual-pad routing for improved current distribution and thermal management.

Key Features

Feature	Design Value
Low V_CE(sat)	220–400 mV at –3 A ensures <0.6 W conduction loss per device, critical for thermally constrained power modules.
Dual-collector structure	Pins 2 and 4 both serve as collector terminals, allowing split-current routing and reduced trace inductance in high-di/dt applications.
High f_T & low C_ob	130–180 MHz f_T and 40–60 pF C_ob enable clean switching edges and minimal capacitive loading on driver stages.
h_FE linearity	Verified h_FE consistency across –0.5 A to –4 A supports accurate base resistor calculation without gain-dependent compensation.
TP-FA thermal design	Exposed thermal pad and 20 W power rating at T_c = 25°C allow direct heatsinking via PCB copper area, eliminating need for discrete heatsinks.

Applications

Relay Drivers	DC-DC Converter Output Stage
Use Scenario: Driving electromagnetic relays requiring >2 A coil current in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF. Use Value: Low V_CE(sat) minimizes self-heating during continuous hold state; fast t_f ensures rapid contact release and prevents contact welding.	Use Scenario: Synchronous rectification or high-side switching in 12 V–48 V isolated DC-DC converters for telecom power supplies. IC Role / Device Role / Timing Role: Main PNP power switch in forward or push-pull topology, handling peak currents up to –5 A with controlled dV/dt. Use Value: Dual-collector layout and low C_ob reduce switching noise and EMI; 20 W thermal rating supports high-duty-cycle operation without forced air cooling.
Motor Control H-Bridge Legs	High-Speed Inverter Stages
Use Scenario: Upper-leg PNP switch in brushed DC motor H-bridge drivers for automotive seat/mirror actuators. IC Role / Device Role / Timing Role: High-side current source delivering bidirectional motor current up to –4 A with precise base-controlled turn-on timing. Use Value: Verified h_FE linearity ensures consistent gate/base drive across load current range; TP-FA package withstands vibration and thermal cycling in automotive environments.	Use Scenario: High-frequency inverters for LED backlight dimming or ultrasonic transducer excitation in medical imaging equipment. IC Role / Device Role / Timing Role: Fast-switching PNP element in Class-D or resonant inverter half-bridge, operating at 100–500 kHz. Use Value: 50 ns t_on and 20 ns t_f enable >95% duty cycle fidelity; low V_BE(sat) (–0.95 to –1.3 V) simplifies complementary NPN driver design.

Relay Drivers

DC-DC Converter Output Stage

Use Scenario: Driving electromagnetic relays requiring >2 A coil current in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF.

Use Value: Low V_CE(sat) minimizes self-heating during continuous hold state; fast t_f ensures rapid contact release and prevents contact welding.

Use Scenario: Synchronous rectification or high-side switching in 12 V–48 V isolated DC-DC converters for telecom power supplies.

IC Role / Device Role / Timing Role: Main PNP power switch in forward or push-pull topology, handling peak currents up to –5 A with controlled dV/dt.

Use Value: Dual-collector layout and low C_ob reduce switching noise and EMI; 20 W thermal rating supports high-duty-cycle operation without forced air cooling.

Motor Control H-Bridge Legs

High-Speed Inverter Stages

Use Scenario: Upper-leg PNP switch in brushed DC motor H-bridge drivers for automotive seat/mirror actuators.

IC Role / Device Role / Timing Role: High-side current source delivering bidirectional motor current up to –4 A with precise base-controlled turn-on timing.

Use Value: Verified h_FE linearity ensures consistent gate/base drive across load current range; TP-FA package withstands vibration and thermal cycling in automotive environments.

Use Scenario: High-frequency inverters for LED backlight dimming or ultrasonic transducer excitation in medical imaging equipment.

IC Role / Device Role / Timing Role: Fast-switching PNP element in Class-D or resonant inverter half-bridge, operating at 100–500 kHz.

Use Value: 50 ns t_on and 20 ns t_f enable >95% duty cycle fidelity; low V_BE(sat) (–0.95 to –1.3 V) simplifies complementary NPN driver design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1203S-TL-E	Same die, identical electrical specs, but marked "S" rank (h_FE = 140–280) vs. "T" rank (200–400) in 2SB1203S-FTT-TL-E.	Suitable where moderate h_FE suffices; lower gain reduces base drive sensitivity to temperature drift.	Select 2SB1203S-TL-E when tighter h_FE tolerance and cost optimization are prioritized over maximum current gain.
MJD44H11T4G	Higher V_CEO (–80 V), same I_C (–5 A), but larger DPAK (TO-252) package and slower t_f (100 ns); no dual-collector pinout.	Better suited for higher-voltage industrial motor drives where breakdown margin >–50 V is required.	Choose MJD44H11T4G only if system requires >–50 V blocking capability and can accommodate longer fall time and single-collector layout.

Compared with 2SB1203S-TL-E and MJD44H11T4G, the 2SB1203S-FTT-TL-E offers the highest h_FE range (200–400), fastest fall time (20 ns), and unique dual-collector pinout-making it optimal for compact, high-efficiency, high-frequency PNP switching where base drive precision and thermal management are critical.

Availability

2SB1203S-FTT-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converter output stages, and motor control H-bridge legs requiring stable component supply, consistent h_FE binning, and TP-FA thermal performance.

Supply support for 2SB1203S-FTT-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient silicon and SiC solutions for automotive, industrial, cloud, and IoT applications.

The 2SB1203 series belongs to onsemi's general-purpose bipolar transistor portfolio, designed specifically for high-current, high-speed switching in power conversion, motor control, and industrial automation systems.

FAQ

What is the exact package type and JEDEC designation for 2SB1203S-FTT-TL-E?

The 2SB1203S-FTT-TL-E uses the TP-FA package, which corresponds to JEDEC TO-252 (SC-63) with an exposed thermal pad and four terminals. Pin 1 is base, pin 3 is emitter, and pins 2 and 4 are internally connected collectors-confirmed in the official onsemi datasheet EN2085C and outline drawing No.2085-7/10.

Does 2SB1203S-FTT-TL-E have a dual-collector configuration, and how is it implemented?

Yes, the 2SB1203S-FTT-TL-E has a dual-collector configuration: pins 2 and 4 are both connected to the collector node. This is explicitly shown in the "Electrical Connection (TP, TP-FA)" diagram and used to improve current sharing and thermal spreading in high-power layouts-distinct from standard three-terminal TO-252 devices.

What h_FE rank does the "T" suffix indicate in 2SB1203S-FTT-TL-E?

The "T" in 2SB1203S-FTT-TL-E denotes the h_FE rank classification per onsemi's specification: h_FE = 200–400 at V_CE = –2 V and I_C = –0.5 A. This is confirmed in the "Rank" table on page No.2085-3/10, where "T" is defined separately from "S" (140–280) and "R" (100–200).

Is 2SB1203S-FTT-TL-E lead-free and halogen-free?

The "E" suffix in 2SB1203S-FTT-TL-E indicates Pb-free (lead-free) construction per J-STD-609, as stated in the "Ordering Information" table. However, it is not halogen-free-the "H" suffix (e.g., 2SB1203S-Tl-H) denotes halogen-free compliance, and this part lacks that designation.

What is the maximum power dissipation of 2SB1203S-FTT-TL-E at case temperature 25°C?

The 2SB1203S-FTT-TL-E has a maximum collector dissipation (P_C) of 20 W at case temperature T_c = 25°C, as specified in the "Absolute Maximum Ratings" table on page No.2085-1/10. This value assumes ideal heatsinking and is derated linearly above 25°C per the PC–Ta curve on page No.2085-5/10.

2SB1203S-FTT-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: 2SB1203

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 150mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 2-TP-FA

2SB1203S-FTT-TL-E FAQ

1.How can I place an order for 2SB1203S-FTT-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1203S-FTT-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1203S-FTT-TL-E reliable?

The price and inventory of 2SB1203S-FTT-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1203S-FTT-TL-E is usually 5 days.

3.What payment methods are accepted for 2SB1203S-FTT-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1203S-FTT-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1203S-FTT-TL-E?

2SB1203S-FTT-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1203S-FTT-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1203S-FTT-TL-E?

For technical support, including 2SB1203S-FTT-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1203S-FTT-TL-E requirements.

6.How does Aetrix verify that 2SB1203S-FTT-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SB1203S-FTT-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1203S-FTT-TL-E meets industry standards.

7.What is the process for return or replacement of 2SB1203S-FTT-TL-E?

All 2SB1203S-FTT-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1203S-FTT-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1203S-FTT-TL-E part is unused and in its original packaging.

Return procedure for 2SB1203S-FTT-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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