onsemi 2SB1203S-N-TL-E
- Part No.:
- 2SB1203S-N-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SB1203S-N-TL-E.pdf
- Description:
- TRANS PNP 50V 5A 2-TP-FA
- Quantity:
- Payment:

- Shipping:

Inventory:2,800
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Product details
Overview
2SB1203S-N-TL-E from onsemi is a PNP bipolar junction transistor rated for −50 V VCEO, −5 A IC, and low −220 mV typical VCE(sat) at −3 A/−0.15 A drive, optimized for high-current switching in relay drivers and DC-DC converters.
For engineers reviewing the 2SB1203S-N-TL-E datasheet, pinout, applications, or equivalent options, this device offers verified PNP switching performance with TP-FA (SC-63/TO-252) package compatibility, fT = 180 MHz, and hFE up to 400 - critical for compact, high-efficiency power stage design.
Technical Context
This PNP transistor operates with reverse-polarity voltage ratings and current flow conventions: VCEO = −50 V, VCBO = −60 V, and VEBO = −6 V define safe blocking limits, while IC = −5 A continuous and ICP = −8 A pulsed support robust switching duty cycles.
Its fast switching is enabled by ton = 50 ns, tstg = 500 ns, and tf = 20 ns under specified test conditions, and linearity of hFE across IC ensures predictable gain behavior in analog and digital control paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum collector-to-emitter voltage before breakdown in common-emitter configuration. |
| IC | −5 A: Continuous collector current rating defining maximum steady-state load-handling capability. |
| VCE(sat) | −220 mV typ @ −3 A/−0.15 A: Low saturation voltage minimizes conduction loss in switching applications. |
| fT | 180 MHz: Gain-bandwidth product enabling reliable operation in high-speed switching circuits up to ~100 MHz. |
| hFE | 70–400: DC current gain range (rank S: 140–280) supporting stable biasing across production lots. |
| tf | 20 ns: Fast fall time reduces switching transition losses and EMI generation in PWM stages. |
| PC @ Tc=25°C | 20 W: Thermal power dissipation limit at case temperature, requiring heatsinking for full-current operation. |
Pinout & Package
2SB1203S-N-TL-E uses the TP-FA package (JEITA/ JEDEC: SC-63, TO-252), a surface-mount, 4-terminal, slim-profile power package with exposed collector tabs for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires −0.15 A base drive for −3 A collector switching. |
| 2 | Collector | Main high-current output path; electrically connected to exposed tab for thermal conduction. |
| 3 | Emitter | Current return path; tied to system ground or negative rail in PNP high-side switch configurations. |
| 4 | Collector | Second collector terminal - paralleled with Pin 2 to reduce package inductance and improve thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −220 mV typical enables <1 W conduction loss at −3 A, improving efficiency in 12–48 V industrial switches. |
| High fT | 180 MHz bandwidth supports clean square-wave switching up to 20–30 MHz fundamental frequencies. |
| hFE linearity | Consistent gain vs. IC curve ensures stable bias point across operating range - critical for analog feedback loops. |
| TP-FA package | TO-252 variant with dual collector pins and enhanced thermal pad delivers >1.5× better θJA than standard TP (TO-251). |
Applications
| Industrial Relay Drivers | DC-DC Converter Switches |
|---|---|
Use Scenario: Driving 24 V/2 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: PNP high-side switch providing inverted logic-level interface and low-loss current sourcing. Use Value: −220 mV VCE(sat) limits relay coil power loss to <0.66 W, reducing thermal stress on PCB traces and connectors. | Use Scenario: Synchronous rectification or main switch in non-isolated buck converters delivering 5–12 V @ 3 A from 24–48 V bus. IC Role / Device Role / Timing Role: Power switching element handling high peak currents with minimal transition and conduction loss. Use Value: 20 ns fall time and 50 ns turn-on enable >500 kHz switching without excessive gate drive complexity or shoot-through risk. |
| High-Speed Inverters | Motor Control H-Bridge Legs |
Use Scenario: Half-bridge upper-leg switch in 3-phase inverter stages for BLDC motor drives operating at 10–20 kHz PWM. IC Role / Device Role / Timing Role: PNP-based high-side switch complementing NPN/N-channel devices in complementary output stages. Use Value: Dual collector terminals (Pins 2 & 4) reduce parasitic inductance, minimizing voltage overshoot during hard commutation events. | Use Scenario: Current-sense or protection switch in gate driver auxiliary supply rails for IGBT or MOSFET half-bridges. IC Role / Device Role / Timing Role: Fast-acting current-limiting switch activated by overcurrent detection circuitry. Use Value: 500 ns storage time allows rapid turn-off response to fault signals, limiting energy dissipation during short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD2955G | VCEO = −60 V, IC = −10 A, VCE(sat) = −1.2 V @ −5 A - higher saturation voltage, larger TO-220 package. | Higher power dissipation and board space requirement; suitable where thermal margin exceeds 2W. | Select when higher voltage margin (−60 V) and ruggedness outweigh efficiency and footprint constraints. |
| 2SB1182T100Q | VCEO = −50 V, IC = −3 A, VCE(sat) = −200 mV @ −2 A - lower current rating but tighter VCE(sat) tolerance. | Limited to ≤3 A loads; preferred in space-constrained designs where precise low-Vsat is prioritized over headroom. | Choose for compact 2–3 A applications where 2SB1203S-N-TL-E's −5 A rating is excessive and layout area is premium. |
Compared with MJD2955G and 2SB1182T100Q, the 2SB1203S-N-TL-E delivers optimal balance of −5 A current capacity, −220 mV VCE(sat), and TO-252 footprint - making it ideal for space- and efficiency-sensitive industrial switching where thermal design targets <1.5 W conduction loss.
Availability
2SB1203S-N-TL-E is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter switches, high-speed inverters, and motor control H-bridge legs requiring stable component supply and Pb-free compliance.
Supply support for 2SB1203S-N-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SB1203S-N-TL-E belongs to onsemi's general-purpose bipolar power transistor family, engineered for high-reliability, high-current switching in industrial controls and power conversion systems.
FAQ
What is the package type and lead finish of the 2SB1203S-N-TL-E?
The 2SB1203S-N-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63), a surface-mount power package with dual collector terminals and an exposed thermal pad. It features Pb-free and RoHS-compliant termination, confirmed by the "-E" suffix in the ordering code and documented in onsemi's EN2085C specification.
Does the 2SB1203S-N-TL-E have a guaranteed hFE range, and how is it binned?
Yes - the 2SB1203S-N-TL-E is rank-coded per hFE at IC = −0.5 A, VCE = −2 V: Rank S guarantees hFE = 140–280. This binning ensures predictable DC bias stability in production designs, and the "S" in the part number directly indicates this gain band.
What is the maximum pulsed collector current rating for the 2SB1203S-N-TL-E?
The 2SB1203S-N-TL-E supports ICP = −8 A under pulsed conditions (10 ms, duty cycle ≤10%), as specified in its Absolute Maximum Ratings table. This rating enables short-duration surge handling in motor startup or inductive load switching without thermal runaway.
Can the 2SB1203S-N-TL-E be used in linear amplifier applications?
While the 2SB1203S-N-TL-E exhibits excellent hFE linearity, its design emphasis is on switching - evidenced by fast tf = 20 ns and optimized VCE(sat). Linear use is possible at low quiescent currents (<500 mA), but thermal derating and SOA limitations make dedicated linear transistors preferable for sustained analog amplification.
How does the dual-collector configuration (Pins 2 & 4) impact PCB layout for the 2SB1203S-N-TL-E?
The dual-collector configuration in the 2SB1203S-N-TL-E requires connecting both Pin 2 and Pin 4 to the same high-current net - typically the power rail or heatsink plane. This reduces current density per bond wire and lowers effective package inductance, which suppresses voltage spikes during fast switching transitions.
2SB1203S-N-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- 2SB1203
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 550mV @ 150mA, 3A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 140 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 130MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-TP-FA
2SB1203S-N-TL-E FAQ
1.How can I place an order for 2SB1203S-N-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1203S-N-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1203S-N-TL-E reliable?
The price and inventory of 2SB1203S-N-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1203S-N-TL-E is usually 5 days.
3.What payment methods are accepted for 2SB1203S-N-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1203S-N-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1203S-N-TL-E?
2SB1203S-N-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1203S-N-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1203S-N-TL-E?
For technical support, including 2SB1203S-N-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1203S-N-TL-E requirements.
6.How does Aetrix verify that 2SB1203S-N-TL-E is sourced from the original manufacturer or authorized distributors?
All 2SB1203S-N-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1203S-N-TL-E meets industry standards.
7.What is the process for return or replacement of 2SB1203S-N-TL-E?
All 2SB1203S-N-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1203S-N-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1203S-N-TL-E part is unused and in its original packaging.
Return procedure for 2SB1203S-N-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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