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onsemi 2SB1203S-TL-E
- Part No.:
- 2SB1203S-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SB1203S-TL-E.pdf
- Description:
- TRANS PNP 50V 5A TP-FA
- Quantity:
- Payment:
- Shipping:
Inventory:8
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Product details
Overview
2SB1203S-TL-E from onsemi is a PNP bipolar junction transistor (BJT) designed for high-current switching applications, featuring –50 V VCEO, –5 A IC, low –220 mV typical VCE(sat) at –3 A/–0.15 A, 180 MHz fT, and housed in the TP-FA (SC-63/TO-252) surface-mount package. It serves as a robust power switch in relay drivers and DC-DC converters.
For engineers reviewing the 2SB1203S-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed –50 V breakdown rating, measured VCE(sat) under pulsed conditions, thermal performance at Tc = 25°C, and TP-FA land pattern compatibility with JEDEC TO-252 footprints.
Technical Context
This PNP transistor operates with reverse-polarity voltage ratings and current flow: VCEO = –50 V, VCBO = –60 V, and VEBO = –6 V define safe operating limits; IC = –5 A continuous and ICP = –8 A pulsed support high-duty-cycle switching. Its hFE ranges from 70 to 400 across ranks (Q–T), with linearity maintained across IC = –0.5 A to –4 A.
Switching performance is characterized by ton = 50 ns, tstg = 500 ns, and tf = 20 ns under specified test conditions; Cob = 40 pF at VCB = –10 V enables stable high-frequency operation. The device is rated for Tj = 150°C and Tstg = –55 to +150°C, supporting industrial ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –50 V - Maximum collector-to-emitter voltage before avalanche; defines safe blocking capability in PNP high-side switches. |
| IC | –5 A - Continuous collector current; supports sustained load switching in motor drivers and power supplies. |
| VCE(sat) | –220 mV (typ) at –3 A/–0.15 A - Low saturation voltage reduces conduction loss and self-heating during on-state operation. |
| fT | 180 MHz - Gain-bandwidth product enabling reliable operation up to high-speed switching frequencies (~10–20 MHz practical). |
| hFE | 70–400 (rank-dependent) - Wide DC current gain range allows flexible base drive design across production lots. |
| tf | 20 ns - Fast fall time minimizes switching transition losses in PWM-controlled circuits. |
| PC @ Tc=25°C | 20 W - Package-limited power dissipation; requires heatsinking or PCB copper area for thermal management above ~2 W. |
Pinout & Package
2SB1203S-TL-E uses the TP-FA package (JEITA SC-63 / JEDEC TO-252), a 4-pin surface-mount outline with dual collector terminals for enhanced current handling and thermal path. The slim profile (2.3 mm max height) supports high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires –0.15 A base current to saturate at –3 A collector current. |
| 2 | Collector | Main high-current output terminal; electrically tied to Pin 4 for parallel current sharing and lower RDS(on)-equivalent resistance. |
| 3 | Emitter | Common reference node for PNP configuration; connected to higher potential rail in high-side switch topologies. |
| 4 | Collector | Second collector terminal; improves thermal spreading and reduces effective lead inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –220 mV typical at –3 A ensures <1 W conduction loss per device, reducing thermal stress in compact converters. |
| High fT | 180 MHz enables stable small-signal amplification and fast switching up to 20 MHz without gain roll-off. |
| Rank-classified hFE | Four hFE bins (Q–T, 70–400) allow matched pair selection for differential or push-pull stages. |
| TP-FA package | TO-252-compatible footprint with dual collectors improves current derating margin and thermal resistance vs. standard TP. |
| Pb-free & halogen-free option | 2SB1203S-TL-E meets RoHS Directive 2011/65/EU and JESD204B material compliance requirements. |
Applications
| Automotive Relay Drivers | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: Driving 12 V/24 V automotive relays in body control modules requiring >3 A coil current. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil ground path; operates in saturation with <100 ns total switching time. Use Value: Low –220 mV VCE(sat) minimizes power loss and heat generation in confined under-hood spaces. |
Use Scenario: Synchronous rectification or main switch in non-isolated buck converters delivering 5–12 V at 3–5 A. IC Role / Device Role / Timing Role: Primary PNP power switch in high-side configuration; driven by complementary NPN or gate driver IC. Use Value: Dual-collector TP-FA layout lowers effective thermal resistance, sustaining 20 W dissipation with minimal heatsink area. |
| High-Speed Inverters | General-Purpose Power Switching |
|
Use Scenario: Half-bridge leg in 20–50 kHz inverters for LED drivers or small AC motors. IC Role / Device Role / Timing Role: Fast-switching PNP element paired with NPN counterpart; leverages 20 ns fall time for reduced dead-time loss. Use Value: 180 MHz fT ensures stable gain during transient switching events, preventing oscillation in feedback loops. |
Use Scenario: Overcurrent protection, battery disconnect, or load switching in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Robust discrete power switch replacing mechanical contacts; rated for 100,000+ cycles at full –5 A load. Use Value: –60 V VCBO and –50 V VCEO provide 20% voltage margin over 48 V nominal systems, enhancing long-term reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | Same TO-252 package, but VCEO = –100 V, IC = –5 A, VCE(sat) = –500 mV (max) at –3 A - higher voltage rating, higher saturation loss. | Preferred where system transients exceed –60 V; less suitable for efficiency-critical low-loss designs. | Select MJD127G when overvoltage robustness outweighs conduction loss; verify base drive capability for higher VBE(sat). |
| 2SB1182TL | TP-FA package, VCEO = –50 V, IC = –3 A, VCE(sat) = –300 mV (max) - lower current rating and higher saturation voltage than 2SB1203S-TL-E. | Better suited for <3 A loads with tighter board space constraints; not recommended for full 5 A continuous duty. | Choose 2SB1182TL only if peak current stays below –3 A and layout cannot accommodate 2SB1203S-TL-E's thermal mass. |
Compared with MJD127G and 2SB1182TL, the 2SB1203S-TL-E delivers superior conduction efficiency at –5 A due to its –220 mV typical VCE(sat), while maintaining identical TP-FA mounting and thermal interface - making it optimal for thermally constrained, high-efficiency PNP switching.
Availability
2SB1203S-TL-E is available at Aetrix Electronics and suitable for automotive relay drivers, industrial DC-DC converters, and high-speed inverters requiring stable component supply, RoHS-compliant packaging, and proven thermal performance in TO-252-based designs.
Supply support for 2SB1203S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SB1203S-TL-E belongs to onsemi's general-purpose bipolar transistor family engineered for high-current, high-speed switching in power management and electromechanical control systems.
FAQ
What is the package type and lead finish of 2SB1203S-TL-E?
The 2SB1203S-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63) with Pb-free (RoHS-compliant) termination. Its marking "TL" indicates tape-and-reel packaging (700 pcs./reel), and the device features a matte tin finish on exposed copper leads for solderability and corrosion resistance.
Does 2SB1203S-TL-E have a guaranteed minimum hFE at high current?
Yes - the 2SB1203S-TL-E guarantees hFE ≥ 35 at VCE = –2 V and IC = –4 A (hFE2 specification). This ensures predictable base drive requirements even under full-load saturation, critical for stable operation in power switching circuits using the 2SB1203S-TL-E.
Can 2SB1203S-TL-E be used in linear amplifier applications?
The 2SB1203S-TL-E is optimized for switching, not linear amplification. While its hFE linearity is excellent per datasheet, its fT and Cob are specified for switching use, and SOA limitations restrict safe linear operation. For amplifiers, select devices explicitly characterized for analog gain stability - the 2SB1203S-TL-E is best applied as a switch.
What is the maximum allowable junction temperature for 2SB1203S-TL-E?
The absolute maximum junction temperature (Tj) for the 2SB1203S-TL-E is 150°C. Operation must remain within this limit under all conditions; derating curves show that at Tc = 25°C, the device supports 20 W dissipation, but this drops to ~8 W at Tc = 100°C - proper thermal design is essential for reliable 2SB1203S-TL-E deployment.
How does the dual-collector configuration (Pins 2 and 4) affect PCB layout for 2SB1203S-TL-E?
The dual-collector design of the 2SB1203S-TL-E (Pins 2 and 4 both connected to collector) requires symmetrical copper pour and equal-length traces to both pins to balance current distribution and minimize thermal gradient. Uneven routing may cause localized heating or premature failure - always route both collector pads identically in the 2SB1203S-TL-E layout.
2SB1203S-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 550mV @ 150mA, 3A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 500mA, 2V
- Power - Max:
- 1 W
- Frequency - Transition:
- 130MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TP-FA
2SB1203S-TL-E FAQ
1.How can I place an order for 2SB1203S-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1203S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1203S-TL-E reliable?
The price and inventory of 2SB1203S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1203S-TL-E is usually 5 days.
3.What payment methods are accepted for 2SB1203S-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1203S-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1203S-TL-E?
2SB1203S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1203S-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1203S-TL-E?
For technical support, including 2SB1203S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1203S-TL-E requirements.
6.How does Aetrix verify that 2SB1203S-TL-E is sourced from the original manufacturer or authorized distributors?
All 2SB1203S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1203S-TL-E meets industry standards.
7.What is the process for return or replacement of 2SB1203S-TL-E?
All 2SB1203S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1203S-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1203S-TL-E part is unused and in its original packaging.
Return procedure for 2SB1203S-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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