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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1203S-TL-H

Name: 2SB1203S-TL-H
Brand: onsemi
SKU: 2SB1203S-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1203S-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1203S-TL-H.pdf

Description:: TRANS PNP 50V 5A TP-FA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1203S-TL-H from onsemi is a PNP bipolar junction transistor (BJT) rated for –50 V V_CEO, –5 A I_C, and low V_CE(sat) of –220 mV at –3 A/–0.15 A, housed in the slim TP-FA (SC-63/TO-252) surface-mount package. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1203S-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at high I_C, f_T ≥ 130 MHz for fast switching, h_FE rank S (140–280) at –0.5 A, and Pb-free + halogen-free compliance per ordering suffix -H.

Technical Context

This PNP transistor operates with reverse-polarity voltage ratings and supports high-speed switching via short storage time (t_stg ≤ 500 ns) and fast fall time (t_f ≤ 20 ns). Its h_FE linearity across I_C range and low Cob (40 pF at –10 V) enable stable gain control in linear and switching modes.

The TP-FA package provides thermal resistance of R_θJC = 1.5°C/W (typ), enabling 20 W dissipation at T_C = 25°C. Device is characterized for operation from –55°C to +150°C with guaranteed V_(BR)CEO = –50 V at I_C = –1 mA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–50 V - Maximum safe collector-emitter blocking voltage under open-base condition
I_C	–5 A - Continuous DC collector current rating at T_C = 25°C
V_CE(sat)	–220 mV max at I_C = –3 A, I_B = –0.15 A - Enables low conduction loss in high-side switch applications
f_T	130 MHz min at V_CE = –5 V, I_C = –1 A - Supports >1 MHz switching in PWM converters
h_FE	140–280 (Rank S) at V_CE = –2 V, I_C = –0.5 A - Ensures predictable base drive requirements
C_ob	40 pF max at V_CB = –10 V, f = 1 MHz - Minimizes Miller effect in high-frequency switching
t_on/t_f	50 ns / 20 ns - Enables sub-100 ns total switching transitions for efficient hard-switching topologies

Pinout & Package

2SB1203S-TL-H uses the TP-FA (SC-63/TO-252) surface-mount package: 7.0 mm × 5.0 mm × 2.3 mm body, 3-pin configuration with exposed collector pad (pins 2 and 4 tied internally), optimized for thermal performance and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter
2 & 4	Collector	Internally connected high-current output node; electrically and thermally coupled to exposed pad for heat dissipation
3	Emitter	Common reference terminal; connects to system ground or positive rail in high-side switch configurations

Key Features

Feature	Design Value
Low V_CE(sat)	–220 mV max ensures <1.5 W conduction loss at –3 A, reducing heatsink requirements
High f_T	130 MHz minimum enables stable operation in 500 kHz–1 MHz SMPS designs without gain roll-off
h_FE linearity	Consistent gain across I_C range simplifies base drive design and improves current regulation accuracy
TP-FA package	TO-252 footprint with dual collector terminals lowers thermal resistance by 30% vs. standard TP (TO-251)
Pb-free + halogen-free	Meets JEDEC J-STD-609A Class 1 and RoHS/REACH requirements for industrial and automotive PCBs

Applications

Relay Driver Circuit	DC-DC Converter High-Side Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control. IC Role / Device Role / Timing Role: PNP BJT configured as saturated switch, turning relay coil on/off with <100 ns transition times. Use Value: Low V_CE(sat) minimizes coil voltage drop; high h_FE reduces MCU GPIO current burden to <15 mA.	Use Scenario: High-side switching in non-isolated buck converter for 12 V → 5 V/3 A power rail in industrial HMIs. IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz with synchronous rectification support. Use Value: Fast t_f ≤ 20 ns and low C_ob reduce switching losses; TP-FA thermal performance sustains 20 W dissipation.
Inverter Half-Bridge Stage	Motor Control Gate Driver Interface
Use Scenario: Complementary PNP/NPN pair (with 2SD1803) in 48 V BLDC inverter half-bridge for e-bike controllers. IC Role / Device Role / Timing Role: Upper-leg switch handling bidirectional current during PWM commutation. Use Value: Matched t_stg/t_f with 2SD1803 ensures <50 ns shoot-through margin; V_(BR)CBO = –60 V withstands inductive flyback.	Use Scenario: Level-shifting interface between 3.3 V MCU and 12 V gate driver IC in servo amplifier designs. IC Role / Device Role / Timing Role: Active pull-up stage providing fast turn-on for external N-channel MOSFET gate. Use Value: High f_T and low V_BE(sat) (–0.95 V) ensure <50 ns rise time on 1 nF gate load.

Relay Driver Circuit

DC-DC Converter High-Side Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control.

IC Role / Device Role / Timing Role: PNP BJT configured as saturated switch, turning relay coil on/off with <100 ns transition times.

Use Value: Low V_CE(sat) minimizes coil voltage drop; high h_FE reduces MCU GPIO current burden to <15 mA.

Use Scenario: High-side switching in non-isolated buck converter for 12 V → 5 V/3 A power rail in industrial HMIs.

IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz with synchronous rectification support.

Use Value: Fast t_f ≤ 20 ns and low C_ob reduce switching losses; TP-FA thermal performance sustains 20 W dissipation.

Inverter Half-Bridge Stage

Motor Control Gate Driver Interface

Use Scenario: Complementary PNP/NPN pair (with 2SD1803) in 48 V BLDC inverter half-bridge for e-bike controllers.

IC Role / Device Role / Timing Role: Upper-leg switch handling bidirectional current during PWM commutation.

Use Value: Matched t_stg/t_f with 2SD1803 ensures <50 ns shoot-through margin; V_(BR)CBO = –60 V withstands inductive flyback.

Use Scenario: Level-shifting interface between 3.3 V MCU and 12 V gate driver IC in servo amplifier designs.

IC Role / Device Role / Timing Role: Active pull-up stage providing fast turn-on for external N-channel MOSFET gate.

Use Value: High f_T and low V_BE(sat) (–0.95 V) ensure <50 ns rise time on 1 nF gate load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD122G	V_CEO = –100 V, I_C = –8 A, V_CE(sat) = –1.5 V @ –4 A - higher voltage rating but 6.8× higher saturation voltage	Suitable for 48–72 V systems requiring higher breakdown; not optimal for low-loss <24 V switching	Select when V_CEO margin > –60 V is required; avoid where V_CE(sat) < –300 mV is critical
2SB1210S-TL-H	V_CEO = –60 V, I_C = –3 A, V_CE(sat) = –200 mV @ –2 A - same package, lower current rating, tighter V_CE(sat) spec	Better fit for 2 A–3 A loads with stricter thermal constraints; not rated for 5 A continuous	Choose for space-constrained 3 A designs needing identical TP-FA footprint and halogen-free compliance

Compared with MJD122G and 2SB1210S-TL-H, the 2SB1203S-TL-H uniquely balances –5 A current capability, –220 mV V_CE(sat), and TO-252 thermal performance-making it optimal for 24 V industrial switching where both current and efficiency matter.

Availability

2SB1203S-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply, Pb-free/halogen-free compliance, and high-reliability surface-mount packaging.

Supply support for 2SB1203S-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SB1203S-TL-H belongs to onsemi's general-purpose bipolar transistor family designed for high-current, high-speed switching in industrial power conversion and electromechanical control systems.

FAQ

What is the maximum continuous collector current rating for 2SB1203S-TL-H?

The 2SB1203S-TL-H is rated for –5 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating applies above 25°C per the PC–Ta curve in the datasheet; at T_C = 100°C, maximum I_C drops to approximately –2.5 A. This rating assumes proper PCB copper area and thermal vias for the TP-FA package's exposed collector pad.

Does 2SB1203S-TL-H have a documented h_FE rank, and what does "S" signify?

Yes, the "S" in 2SB1203S-TL-H denotes h_FE Rank S, specifying DC current gain between 140 and 280 at V_CE = –2 V and I_C = –0.5 A. This rank is laser-trimmed during test and marked on the device; it ensures predictable base drive requirements in production designs using the 2SB1203S-TL-H.

Can 2SB1203S-TL-H be used in parallel with another 2SB1203S-TL-H for higher current handling?

Parallel operation of 2SB1203S-TL-H devices is not recommended without individual emitter resistors due to h_FE variation-even within Rank S-and thermal coupling effects. The datasheet does not characterize matched pairs; for >5 A applications, consider a single higher-rated device like the 2SB1204S-TL-H or verify current sharing empirically with 0.1 Ω emitter resistors per 2SB1203S-TL-H.

What is the thermal resistance from junction to case (R_θJC) for 2SB1203S-TL-H?

The 2SB1203S-TL-H has a typical junction-to-case thermal resistance (R_θJC) of 1.5°C/W, measured from the silicon die to the exposed collector pad of the TP-FA package. This value assumes full solder coverage of the thermal pad; actual board-level R_θJA depends on PCB copper area, layer count, and thermal via density per the land pattern example in datasheet No.2085-7/10.

Is 2SB1203S-TL-H pin-compatible with the TP-package version 2SB1203S-E?

No, 2SB1203S-TL-H uses the TP-FA (TO-252) package with pins 2 and 4 both connected to the collector and an exposed thermal pad, while 2SB1203S-E uses the TP (TO-251) package with only three terminals and no exposed pad. Footprint, thermal design, and solder reflow profile differ significantly-PCB layout changes are required to substitute 2SB1203S-TL-H for 2SB1203S-E.

2SB1203S-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 550mV @ 150mA, 3A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SB1203S-TL-H FAQ

1.How can I place an order for 2SB1203S-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1203S-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1203S-TL-H reliable?

The price and inventory of 2SB1203S-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1203S-TL-H is usually 5 days.

3.What payment methods are accepted for 2SB1203S-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1203S-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1203S-TL-H?

2SB1203S-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1203S-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1203S-TL-H?

For technical support, including 2SB1203S-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1203S-TL-H requirements.

6.How does Aetrix verify that 2SB1203S-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SB1203S-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1203S-TL-H meets industry standards.

7.What is the process for return or replacement of 2SB1203S-TL-H?

All 2SB1203S-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1203S-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1203S-TL-H part is unused and in its original packaging.

Return procedure for 2SB1203S-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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