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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1215S-E

Name: 2SB1215S-E
Brand: onsemi
SKU: 2SB1215S-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1215S-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SB1215S-E.pdf

Description:: TRANS PNP 100V 3A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1215S-E from onsemi is a PNP bipolar junction transistor rated for –100 V V_CEO, –3 A I_C, and low V_CE(sat) of –400 mV at –1.5 A/–0.15 A, optimized for high-current switching in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1215S-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TP package thermal performance (20 W at T_c = 25°C), h_FE rank S (140–280 at –0.5 A), and halogen-free compliance per ordering suffix "-H" variants.

Technical Context

This PNP transistor uses epitaxial planar die construction with optimized base doping to achieve high f_T (130–180 MHz) and fast switching (t_on = 100 ns, t_f = 50 ns) while maintaining linearity across I_C = –0.1 A to –2 A. Its dual-collector TP package supports high-power dissipation via case mounting.

The device operates within a validated junction temperature range of –55°C to +150°C and meets JEITA SC-64 / JEDEC TO-251 mechanical standards. Electrical behavior is characterized at T_a = 25°C with specified test conditions for V_(BR)CEO, h_FE, and C_ob (25 pF at V_CB = –10 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V - Maximum safe collector-emitter voltage under open-base condition; defines blocking capability in high-side switch designs.
I_C	–3 A - Continuous DC collector current rating; supports robust operation in 2 A load switching applications with margin.
V_CE(sat)	–400 mV max at I_C = –1.5 A, I_B = –0.15 A - Low saturation voltage minimizes conduction loss and heat generation.
h_FE	140–280 at V_CE = –5 V, I_C = –0.5 A (Rank S) - Predictable DC gain enables stable bias design without excessive base drive overhead.
f_T	130–180 MHz - Enables reliable operation in high-frequency switching circuits up to ~50 MHz with adequate gain margin.
P_C @ T_c	20 W at T_c = 25°C - High case-power rating allows direct heatsinking for sustained high-current duty cycles.

Pinout & Package

2SB1215S-E is housed in the TP package (JEITA SC-64 / JEDEC TO-251), a surface-mount, single-ended leadframe variant with exposed collector tabs for thermal management. The package features four terminals in a compact 7.0 × 5.0 mm footprint with 0.315 g mass.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node; requires –0.15 A base current to saturate at –1.5 A collector load.
2 & 4	Collector	Dual-collector configuration improves current handling and thermal spreading; both pins must be connected to high-side rail or heatsink.
3	Emitter	Common emitter reference; tied to system ground or negative rail in PNP high-side switch topologies.

Key Features

Feature	Design Value
Low V_CE(sat)	–400 mV max ensures <1.2 W conduction loss at –1.5 A, reducing thermal stress in compact power stages.
High f_T	130–180 MHz enables use in >20 MHz switching converters without gain roll-off compromising control loop stability.
Excellent h_FE linearity	Consistent gain from –0.1 A to –2 A supports accurate analog current amplification and predictable digital switching thresholds.
Halogen-free compliance	Meets IEC 61249-2-21 requirements; eliminates brominated flame retardants for RoHS-compliant industrial assembly.
TP package thermal efficiency	20 W case dissipation rating allows direct PCB copper pour connection to pins 2 & 4 for effective heat transfer without external heatsinks.

Applications

Relay Drivers	DC-DC Converter Switches
Use Scenario: Driving 12 V/500 mA electromagnetic relays in industrial PLC output modules. IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current with fast turn-off (t_f = 50 ns) to suppress back-EMF-induced contact arcing. Use Value: Low V_CE(sat) reduces coil power loss by 35% vs. legacy transistors, enabling higher relay density on thermally constrained PCBs.	Use Scenario: Synchronous rectifier or main switch in non-isolated buck converters delivering 3.3 V/3 A from 12 V input. IC Role / Device Role / Timing Role: High-current PNP switch operating in hard-switched mode with 100 ns turn-on time supporting 500 kHz PWM frequency. Use Value: 20 W case-rated dissipation permits continuous 2.5 A operation without forced air, simplifying thermal design in space-constrained adapters.
Inverter Half-Bridge Legs	High-Speed Level Shifters
Use Scenario: Upper-leg switch in 24 V motor drive inverters for small BLDC fans and pumps. IC Role / Device Role / Timing Role: PNP-based high-side driver stage interfacing gate drivers to N-channel MOSFETs in half-bridge configurations. Use Value: Fast storage time (900 ns max) minimizes shoot-through risk during dead-time transitions, improving inverter efficiency by ≥2.1%.	Use Scenario: Logic-level translation between 3.3 V microcontroller outputs and –5 V analog circuitry in test equipment front-ends. IC Role / Device Role / Timing Role: Saturated PNP switch providing sub-100 ns edge response for precise timing-critical signal inversion. Use Value: Verified h_FE linearity ensures consistent propagation delay across –0.5 mA to –5 mA load currents, eliminating timing jitter.

Relay Drivers

DC-DC Converter Switches

Use Scenario: Driving 12 V/500 mA electromagnetic relays in industrial PLC output modules.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil current with fast turn-off (t_f = 50 ns) to suppress back-EMF-induced contact arcing.

Use Value: Low V_CE(sat) reduces coil power loss by 35% vs. legacy transistors, enabling higher relay density on thermally constrained PCBs.

Use Scenario: Synchronous rectifier or main switch in non-isolated buck converters delivering 3.3 V/3 A from 12 V input.

IC Role / Device Role / Timing Role: High-current PNP switch operating in hard-switched mode with 100 ns turn-on time supporting 500 kHz PWM frequency.

Use Value: 20 W case-rated dissipation permits continuous 2.5 A operation without forced air, simplifying thermal design in space-constrained adapters.

Inverter Half-Bridge Legs

High-Speed Level Shifters

Use Scenario: Upper-leg switch in 24 V motor drive inverters for small BLDC fans and pumps.

IC Role / Device Role / Timing Role: PNP-based high-side driver stage interfacing gate drivers to N-channel MOSFETs in half-bridge configurations.

Use Value: Fast storage time (900 ns max) minimizes shoot-through risk during dead-time transitions, improving inverter efficiency by ≥2.1%.

Use Scenario: Logic-level translation between 3.3 V microcontroller outputs and –5 V analog circuitry in test equipment front-ends.

IC Role / Device Role / Timing Role: Saturated PNP switch providing sub-100 ns edge response for precise timing-critical signal inversion.

Use Value: Verified h_FE linearity ensures consistent propagation delay across –0.5 mA to –5 mA load currents, eliminating timing jitter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1215T-E	Same TP package and absolute ratings, but h_FE rank T (200–400 at –0.5 A); higher gain variation across production lots.	Suitable where tighter h_FE tolerance is not required; may reduce base drive component count in fixed-bias circuits.	Select 2SB1215T-E only if system-level validation confirms stable operation across full h_FE range and temperature extremes.
MJD122G	TO-252 (TP-FA) package, V_CEO = –100 V, I_C = –3 A, but V_CE(sat) = –600 mV min at –2 A - 50% higher conduction loss than 2SB1215S-E.	Better suited for lower-frequency (<100 kHz), thermally relaxed layouts due to inferior saturation voltage and thermal resistance.	Choose MJD122G only when TP-FA footprint compatibility or existing board layout constraints override efficiency and thermal performance needs.

Compared with 2SB1215T-E and MJD122G, the 2SB1215S-E delivers superior thermal efficiency (20 W case rating), lowest verified V_CE(sat), and tighter h_FE binning - making it optimal for high-reliability, high-density power switching where conduction loss and gain predictability are critical.

Availability

2SB1215S-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converter switches, and inverter half-bridge legs requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for 2SB1215S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SB1215S-E belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-current, high-speed switching in industrial power control and interface circuits.

FAQ

What is the maximum continuous collector current rating for the 2SB1215S-E?

The 2SB1215S-E has a maximum continuous collector current (I_C) rating of –3 A at T_a = 25°C. Derating applies above 25°C ambient; at T_c = 25°C, it supports 20 W dissipation, enabling sustained operation near –2.5 A with proper heatsinking. This rating is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet No. 2539.

Does the 2SB1215S-E have halogen-free certification?

Yes, the 2SB1215S-E is halogen-free compliant as indicated by the "-H" suffix variants (e.g., 2SB1215S-H). While the 2SB1215S-E itself carries the "-E" suffix denoting Pb-free finish only, its construction aligns with onsemi's halogen-free material specifications per IEC 61249-2-21, and full halogen-free versions are orderable as drop-in alternatives.

What is the pin configuration and package type of the 2SB1215S-E?

The 2SB1215S-E uses the TP package (JEITA SC-64 / JEDEC TO-251) with four terminals: Pin 1 = Base, Pins 2 & 4 = Collector (dual), Pin 3 = Emitter. This configuration is explicitly shown in the "Package Dimensions" diagram on page 2 of the onsemi datasheet No. 2539, confirming mechanical and thermal design intent.

How does the h_FE ranking affect selection of the 2SB1215S-E?

The "S" in 2SB1215S-E denotes h_FE rank S (140–280 at V_CE = –5 V, I_C = –0.5 A), offering tighter DC current gain tolerance than rank T (200–400). This improves bias stability in precision amplifier or feedback-controlled switching circuits where predictable base drive is essential for consistent saturation performance.

Can the 2SB1215S-E be used in place of the 2SB1215T-E?

The 2SB1215S-E and 2SB1215T-E share identical package, voltage/current ratings, and thermal specs, differing only in h_FE binning (S: 140–280, T: 200–400). Substitution is electrically valid, but system-level validation is required to confirm stable operation across the wider h_FE range of the T variant - especially in temperature-varying or margin-critical applications.

2SB1215S-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SB1215S-E FAQ

1.How can I place an order for 2SB1215S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215S-E reliable?

The price and inventory of 2SB1215S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215S-E is usually 5 days.

3.What payment methods are accepted for 2SB1215S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215S-E?

2SB1215S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215S-E?

For technical support, including 2SB1215S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215S-E requirements.

6.How does Aetrix verify that 2SB1215S-E is sourced from the original manufacturer or authorized distributors?

All 2SB1215S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215S-E meets industry standards.

7.What is the process for return or replacement of 2SB1215S-E?

All 2SB1215S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215S-E part is unused and in its original packaging.

Return procedure for 2SB1215S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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