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onsemi 2SB1215S-H

Part No.:
2SB1215S-H
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Aetrix2SB1215S-H.pdf
Description:
TRANS PNP 100V 3A TP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,498

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Product details

Overview

2SB1215S-H from onsemi is a PNP bipolar junction transistor rated for –100 V VCEO, –3 A IC, and low VCE(sat) of –400 mV at –1.5 A/–0.15 A, housed in TP (TO-251) package with 4-pin configuration. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1215S-H datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, JEDEC SC-64 package mapping, switching timing data (ton = 100 ns, tf = 50 ns), hFE classification (Rank S: 140–280 at –0.5 A), and halogen-free compliance per ordering code.

Technical Context

This PNP transistor uses epitaxial planar construction to achieve high fT (180 MHz typ) and excellent hFE linearity across collector current range. Its low saturation voltage enables efficient operation in high-duty-cycle switching topologies where power loss minimization is critical.

The device operates within a junction temperature range of –55°C to +150°C and supports pulsed collector current up to –6 A. Its TP package provides thermal resistance RθJC suitable for surface-mount applications requiring 20 W dissipation at TC = 25°C.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO–100 V - Maximum allowable collector-emitter voltage before breakdown under open-base condition
IC–3 A - Continuous DC collector current rating defining safe linear and switching conduction limits
VCE(sat)–400 mV max at IC = –1.5 A, IB = –0.15 A - Low saturation voltage reduces conduction losses in power switches
fT180 MHz typical at VCE = –10 V, IC = –0.5 A - Enables stable amplification or switching up to high-frequency control signals
ton/tf100 ns / 50 ns - Fast turn-on and fall times support >5 MHz switching in hard-switched topologies
hFE RankS (140–280) - Guaranteed DC current gain range at –0.5 A, enabling predictable base drive sizing
Pb & Halogen FreeYes - Complies with RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements

Pinout & Package

2SB1215S-H is supplied in TP package (JEDEC TO-251, JEITA SC-64), a 4-pin single-ended leadframe surface-mount variant with two collector terminals for enhanced current handling and thermal performance.

Pin/Terminal Circuit Role Design Meaning
1BaseControl terminal; requires –0.15 A base current to saturate at –1.5 A collector load
2 & 4CollectorDual collector pins electrically connected internally; reduce current density and improve thermal path to PCB
3EmiterPower return path; connects to system ground or negative rail in high-side switch configurations

Key Features

Feature Design Value
Low VCE(sat)–400 mV max ensures <0.6 W conduction loss at –1.5 A, critical for thermally constrained PCB layouts
High fT180 MHz typical supports stable operation in PWM controllers and high-speed logic interface circuits
Fast switching100 ns ton and 50 ns tf enable efficient operation in 1–5 MHz DC-DC converter designs
Rank-S hFE140–280 at –0.5 A allows precise base resistor selection without overdesign or excessive drive power
TP packageTO-251 outline with dual collector leads improves current derating margin and thermal transfer to copper pour

Applications

Relay Driver Circuit DC-DC Converter Switch

Use Scenario: Driving 12 V/500 mA electromagnetic relay coils in industrial PLC output modules.

IC Role / Device Role / Timing Role: High-current PNP switch sinking relay coil current during active state.

Use Value: Low VCE(sat) minimizes heat generation in compact enclosures; dual collector pins handle peak inrush currents reliably.

Use Scenario: Upper switch in non-synchronous buck converter operating at 2 MHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor.

Use Value: 180 MHz fT and 50 ns fall time ensure clean turn-off with minimal shoot-through risk in high-frequency operation.

Inverter Output Stage High-Current Linear Regulator Pass Element

Use Scenario: Push-pull output stage in 24 V automotive body-control inverter supplying 3 A peak to solenoid loads.

IC Role / Device Role / Timing Role: High-side PNP switch delivering controlled current pulses to inductive actuator loads.

Use Value: –6 A pulse rating and 150°C Tj rating sustain repeated 100 ms on-times without thermal shutdown.

Use Scenario: Pass transistor in adjustable linear regulator delivering 2.5 A at 5 V from 12 V input in test equipment.

IC Role / Device Role / Timing Role: Series pass element dissipating up to 17.5 W under worst-case dropout conditions.

Use Value: 20 W PC at TC = 25°C and low VCE(sat) reduce heatsink requirements versus standard TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
2SB1215T-HSame TP package, higher hFE rank (T: 200–400 at –0.5 A), identical voltage/current ratingsBetter suited for low-base-drive applications where gain consistency at higher IC mattersSelect 2SB1215T-H when base drive current is limited or hFE stability above 1 A is required
MJD122GTO-252 (DPAK) package, –100 V VCEO, –3 A IC, but VCE(sat) = –600 mV min at –2 A, lower fT (100 MHz)Less efficient in high-frequency or low-loss applications; better thermal pad solderability than TPChoose MJD122G only if DPAK footprint compatibility or PCB assembly process favors SC-63 over SC-64

Compared with 2SB1215T-H and MJD122G, the 2SB1215S-H offers optimal balance of guaranteed hFE range, lowest VCE(sat), and highest fT in the TP package-making it preferred for space-constrained, high-efficiency switching where base drive is moderately available.

Availability

2SB1215S-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-current inverters requiring stable component supply, consistent hFE binning, and halogen-free compliance.

Supply support for 2SB1215S-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.

The 2SB1215S-H belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust high-current switching in cost-sensitive industrial controls and power conversion systems where reliability and thermal performance are critical.

FAQ

What is the maximum continuous collector current rating for the 2SB1215S-H?

The 2SB1215S-H has a maximum continuous collector current (IC) rating of –3 A at TA = 25°C. This rating assumes proper PCB copper area for heat dissipation; derating applies above 25°C ambient, with full 20 W dissipation supported only at case temperature TC = 25°C. The 2SB1215S-H must not exceed this limit in DC or high-duty-cycle applications without thermal analysis.

Does the 2SB1215S-H have a halogen-free construction?

Yes, the 2SB1215S-H is explicitly marked "Pb Free and Halogen Free" in its ordering information, confirming compliance with JEDEC JS709B and IEC 61249-2-21 standards. This designation applies to both mold compound and lead finish, making the 2SB1215S-H suitable for environmentally regulated industrial and consumer products.

How does the hFE ranking work for the 2SB1215S-H?

The "S" in 2SB1215S-H denotes hFE Rank S, specifying a guaranteed DC current gain range of 140 to 280 at VCE = –5 V and IC = –0.5 A. This binning enables predictable base drive design-unlike unranked transistors-and ensures consistent switching behavior across production lots of the 2SB1215S-H.

What is the thermal resistance from junction to case (RθJC) for the 2SB1215S-H?

The 2SB1215S-H datasheet does not publish an explicit RθJC value, but its TP package supports 20 W collector dissipation at TC = 25°C. Based on thermal characterization curves in the datasheet (No.2539-5/7), effective RθJC is approximately 1.25°C/W-calculated from ΔT = P × RθJC. This value is critical for heatsink sizing when using the 2SB1215S-H in linear or high-duty-cycle switching modes.

Can the 2SB1215S-H be used as a direct replacement for the 2SB1215S-E?

Yes, the 2SB1215S-H is a drop-in replacement for the 2SB1215S-E in all electrical and mechanical respects-the only difference is halogen-free packaging. Both share identical TP package dimensions, pinout, absolute maximum ratings, and electrical characteristics. The 2SB1215S-H maintains full compatibility while meeting stricter environmental compliance requirements.

2SB1215S-H Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 500mA, 5V
Power - Max:
1 W
Frequency - Transition:
130MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TP

2SB1215S-H FAQ

1.How can I place an order for 2SB1215S-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215S-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215S-H reliable?

The price and inventory of 2SB1215S-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215S-H is usually 5 days.

3.What payment methods are accepted for 2SB1215S-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215S-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215S-H?

2SB1215S-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215S-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215S-H?

For technical support, including 2SB1215S-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215S-H requirements.

6.How does Aetrix verify that 2SB1215S-H is sourced from the original manufacturer or authorized distributors?

All 2SB1215S-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215S-H meets industry standards.

7.What is the process for return or replacement of 2SB1215S-H?

All 2SB1215S-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215S-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215S-H part is unused and in its original packaging.

Return procedure for 2SB1215S-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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