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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1215S-TL-E

Name: 2SB1215S-TL-E
Brand: onsemi
SKU: 2SB1215S-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1215S-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1215S-TL-E.pdf

Description:: TRANS PNP 100V 3A TP-FA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1215S-TL-E from onsemi is a PNP bipolar junction transistor rated for –100 V V_CEO, –3 A I_C, and low –150 mV typical V_CE(sat) at –1.5 A/–0.15 A, housed in TP-FA (SC-63/TO-252) surface-mount package. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1215S-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified V_CE(sat) performance at 1.5 A, f_T ≥ 130 MHz, JEDEC SC-63 footprint compatibility, and halogen-free compliance per ordering suffix "-H" variants.

Technical Context

This PNP transistor uses epitaxial planar construction with optimized base doping to achieve excellent h_FE linearity across 0.5–2 A and fast switching (t_on = 100 ns, t_f = 50 ns). Its V_CE(sat) remains stable under pulsed conditions up to I_CP = –6 A.

The device operates within T_j = –55°C to +150°C and delivers 20 W power dissipation at T_c = 25°C. Package thermal resistance R_θJC is optimized for TP-FA's exposed collector pad (pins 2 & 4), enabling efficient heat transfer in high-density PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V - Supports switching in 48 V and 100 V rail systems with margin against transients.
I_C	–3 A continuous - Handles sustained load currents in industrial relay and motor driver stages.
V_CE(sat)	–150 mV typ. at –1.5 A/–0.15 A - Minimizes conduction loss and self-heating in high-duty-cycle operation.
f_T	130 MHz min. - Enables reliable operation in >100 kHz PWM circuits and high-speed inverters.
t_f	50 ns - Reduces switching transition time, lowering dynamic losses in hard-switched topologies.
h_FE @ 0.5 A	140–280 (Rank S) - Ensures predictable base drive requirements for consistent turn-on behavior.
C_ob	25 pF max. at –10 V - Limits Miller capacitance, improving gate drive efficiency in complementary pairs.

Pinout & Package

2SB1215S-TL-E uses the TP-FA package (JEDEC TO-252, JEITA SC-63), featuring an exposed collector thermal pad (pins 2 & 4) and standard 3-pin configuration with pin 1 as Base, pin 3 as Emitter.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal requiring –0.15 A base current to saturate at –1.5 A collector current.
2 & 4	Collector	Common collector connection with exposed copper pad for thermal and electrical grounding; supports 20 W dissipation at T_c = 25°C.
3	Emitter	Current return path; tied to system ground or negative rail in high-side switch configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	–150 mV typical enables <1.2 W conduction loss at –1.5 A, reducing heatsink requirements.
High f_T	130 MHz minimum supports clean square-wave switching up to 100 kHz without excessive rise/fall distortion.
Fast switching	50 ns fall time minimizes overlap loss in complementary BJT half-bridge designs.
Halogen-free	Complies with IEC 61249-2-21; eliminates brominated flame retardants in PCB assembly.
Rank-coded h_FE	"S" rank (140–280) ensures tight DC gain distribution for predictable base resistor sizing.

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil current path to ground. Use Value: Low –150 mV V_CE(sat) limits relay coil voltage drop to <2% of supply, ensuring reliable pull-in at low input voltages.	Use Scenario: Output stage in non-isolated buck converter delivering 5 V/2 A from 24 V input. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor in low-side configuration. Use Value: 130 MHz f_T and 50 ns t_f support 200 kHz switching with <5% duty cycle error due to storage delay.
Inverters	Industrial Motor Controls
Use Scenario: Half-bridge leg in 100 W three-phase inverter for small BLDC fans. IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN 2SD1815S-TL-E in push-pull topology. Use Value: Matched h_FE linearity and identical TP-FA footprint enable symmetrical drive and layout compactness.	Use Scenario: Gate driver stage for IGBTs in 7.5 kW variable-frequency drives. IC Role / Device Role / Timing Role: Level-shifting and current-amplifying stage translating logic-level PWM to ±15 V gate signals. Use Value: –100 V V_CEO withstands transient spikes up to 85 V during IGBT turn-off, preventing false triggering.

Relay Drivers

DC-DC Converters

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil current path to ground.

Use Value: Low –150 mV V_CE(sat) limits relay coil voltage drop to <2% of supply, ensuring reliable pull-in at low input voltages.

Use Scenario: Output stage in non-isolated buck converter delivering 5 V/2 A from 24 V input.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching transistor in low-side configuration.

Use Value: 130 MHz f_T and 50 ns t_f support 200 kHz switching with <5% duty cycle error due to storage delay.

Inverters

Industrial Motor Controls

Use Scenario: Half-bridge leg in 100 W three-phase inverter for small BLDC fans.

IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN 2SD1815S-TL-E in push-pull topology.

Use Value: Matched h_FE linearity and identical TP-FA footprint enable symmetrical drive and layout compactness.

Use Scenario: Gate driver stage for IGBTs in 7.5 kW variable-frequency drives.

IC Role / Device Role / Timing Role: Level-shifting and current-amplifying stage translating logic-level PWM to ±15 V gate signals.

Use Value: –100 V V_CEO withstands transient spikes up to 85 V during IGBT turn-off, preventing false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD122T4G	–100 V V_CEO, –3 A I_C, but higher –500 mV V_CE(sat) typ. and TO-252-3 (no dual-collector pad).	Lacks dual-collector thermal path; unsuitable for >15 W continuous dissipation without derating.	Select when lower cost is prioritized over thermal performance and board space is not constrained.
PNX404A	–100 V V_CEO, –2.5 A I_C, –200 mV V_CE(sat), SC-73 package (smaller footprint, lower power rating).	Lower I_C and PC ratings limit use to <10 W loads; incompatible pinout prevents drop-in replacement.	Choose for space-constrained consumer-grade inverters where 2.5 A peak suffices and thermal margin is acceptable.

Compared with MJD122T4G and PNX404A, the 2SB1215S-TL-E provides superior thermal performance via its dual-collector TP-FA package and lowest V_CE(sat), making it optimal for industrial 3 A switching where reliability under sustained load is critical.

Availability

2SB1215S-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and industrial motor controls requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for 2SB1215S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.

The 2SB1215S-TL-E belongs to onsemi's general-purpose bipolar transistor family designed specifically for high-reliability, high-current linear and switching applications in industrial automation and power conversion equipment.

FAQ

What is the maximum continuous collector current for 2SB1215S-TL-E?

The 2SB1215S-TL-E is rated for –3 A continuous collector current (I_C) at T_a = 25°C. Derating is required above 25°C ambient; at 75°C, maximum I_C drops to approximately –1.8 A per the PC–Ta curve in the datasheet. The device also supports –6 A pulsed current (I_CP) with appropriate duty cycle control.

Does 2SB1215S-TL-E have a dual-collector configuration, and how does it affect thermal performance?

Yes, the 2SB1215S-TL-E uses the TP-FA package with pins 2 and 4 both connected to the collector and tied to an exposed copper thermal pad. This dual-collector design lowers thermal resistance and enables 20 W power dissipation at case temperature T_c = 25°C-significantly higher than single-pad TO-252 variants like MJD122T4G.

What is the h_FE range for 2SB1215S-TL-E, and how is it binned?

The 2SB1215S-TL-E is Rank S, with DC current gain h_FE specified from 140 to 280 at V_CE = –5 V and I_C = –0.5 A. This binning ensures consistent base drive requirements across production lots, simplifying bias network design for stable switching performance in production hardware.

Is 2SB1215S-TL-E compatible with lead-free reflow soldering processes?

Yes, the 2SB1215S-TL-E is Pb-free and qualified for standard lead-free reflow profiles (J-STD-020, peak 260°C). Its TP-FA package meets IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1), allowing unlimited floor life before assembly without dry-pack requirements.

How does the V_CE(sat) of 2SB1215S-TL-E compare to similar PNP transistors at 1.5 A?

At –1.5 A collector current and –0.15 A base current, the 2SB1215S-TL-E achieves –150 mV typical V_CE(sat), outperforming alternatives like MJD122T4G (–500 mV typ.) and PNX404A (–200 mV typ.). This lower saturation voltage directly reduces conduction loss and improves system efficiency in high-duty-cycle applications.

2SB1215S-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SB1215S-TL-E FAQ

1.How can I place an order for 2SB1215S-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215S-TL-E reliable?

The price and inventory of 2SB1215S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215S-TL-E is usually 5 days.

3.What payment methods are accepted for 2SB1215S-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215S-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215S-TL-E?

2SB1215S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215S-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215S-TL-E?

For technical support, including 2SB1215S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215S-TL-E requirements.

6.How does Aetrix verify that 2SB1215S-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SB1215S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215S-TL-E meets industry standards.

7.What is the process for return or replacement of 2SB1215S-TL-E?

All 2SB1215S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215S-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215S-TL-E part is unused and in its original packaging.

Return procedure for 2SB1215S-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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