Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1215T-E

Name: 2SB1215T-E
Brand: onsemi
SKU: 2SB1215T-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SB1215T-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SB1215T-E.pdf

Description:: TRANS PNP 100V 3A TP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:67,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SB1215T-E from onsemi is a PNP bipolar junction transistor rated for –100 V V_CEO, –3 A I_C, and low –150 mV typical V_CE(sat) at –1.5 A/–0.15 A, housed in TP (TO-251) package. It serves as a high-current switching device in relay drivers and DC-DC converters where robust saturation performance and fast turn-off are required.

For engineers reviewing the 2SB1215T-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed TP package mechanical dimensions, validated –100 V breakdown rating, and documented 900 ns storage time under specified test conditions.

Technical Context

The 2SB1215T-E operates as a single PNP transistor with fixed emitter-base and collector-base junctions optimized for linear amplification and saturated switching. Its h_FE is binned by DC current gain at –0.5 A (Rank S: 140–280; Rank T: 200–400), and its f_T of 180 MHz supports high-speed switching up to ~100 ns turn-on and 50 ns fall time.

Thermal design relies on case-mounted dissipation (20 W at T_c = 25°C) and a maximum junction temperature of 150°C. The device uses a dual-collector TP package (pins 2 and 4 both connected to collector), enabling higher current handling without internal bond-wire limitations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V: Maximum allowable collector-emitter voltage before avalanche breakdown in common-emitter configuration.
I_C	–3 A: Continuous DC collector current rating defining safe conduction capacity under heatsinked conditions.
V_CE(sat)	–150 mV typ. at –1.5 A/–0.15 A: Low saturation voltage enables <0.23 W conduction loss per switch event at rated current.
f_T	180 MHz: Gain-bandwidth product confirming suitability for switching frequencies up to ~10–20 MHz with adequate gain margin.
t_stg	900 ns: Storage time limiting minimum achievable pulse width and maximum practical switching frequency in hard-saturation drive.
h_FE	200–400 (Rank T): Verified DC current gain range ensuring predictable base drive requirements across production lots.
P_C @ T_c=25°C	20 W: Case-referenced power dissipation limit requiring thermal interface to heatsink for sustained operation above ~1 A.

Pinout & Package

Package: TP (TO-251), surface-mount, 4-pin single-ended leadframe with pins 2 and 4 internally tied to collector, pin 1 to base, pin 3 to emitter. Dimensions: 7.0 × 5.0 × 2.3 mm (L×W×H), mass 0.315 g.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal accepting negative base current to forward-bias B-E junction and enable conduction.
2	Collector	Main high-side current path; electrically identical to pin 4 - used for dual-source layout routing or thermal relief.
3	Emitter	Common return path for load current; connected to system ground or negative rail in high-side switch configurations.
4	Collector	Redundant collector terminal; improves current sharing and reduces effective lead inductance in high-di/dt applications.

Key Features

Feature	Design Value
Low V_CE(sat)	–150 mV typical at –1.5 A ensures <0.23 W conduction loss, reducing thermal load in high-duty-cycle switches.
Dual-collector TP package	Pins 2 and 4 both connect to collector, enabling parallel trace routing and improved thermal spreading over single-collector TO-251 variants.
High f_T	180 MHz bandwidth supports clean square-wave switching up to 10–20 MHz with minimal rise/fall distortion.
Halogen-free construction	Complies with IEC 61249-2-21, eliminating brominated flame retardants for RoHS-compliant end-product certification.
Rank-T h_FE binning	Guaranteed 200–400 h_FE at –0.5 A simplifies base resistor selection and improves batch-to-batch consistency in amplifier designs.

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving electromagnetic relays with coil currents up to 2 A in industrial PLC output modules. IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil energization/de-energization via microcontroller GPIO. Use Value: –100 V V_CEO safely clamps inductive kickback; –150 mV V_CE(sat) minimizes self-heating during continuous hold state.	Use Scenario: Synchronous rectification or main switching element in non-isolated buck converters delivering 1–3 A output. IC Role / Device Role / Timing Role: Power switch operating in hard-saturation mode with fixed base drive in low-frequency (<500 kHz) topologies. Use Value: 900 ns storage time allows reliable operation up to ~200 kHz; 20 W T_c-referenced dissipation supports heatsink-free operation at ≤1.5 A.
Inverters	Motor Control
Use Scenario: Half-bridge leg in 24 V battery-powered inverters converting DC to 50/60 Hz AC for small appliances. IC Role / Device Role / Timing Role: High-side PNP switch paired with NPN complement (e.g., 2SD1815T-E) in push-pull topology. Use Value: Matched TP packaging enables symmetrical PCB layout; identical thermal resistance simplifies thermal management across complementary pair.	Use Scenario: Directional H-bridge driver stage for brushed DC motors in automotive seat adjusters or HVAC actuators. IC Role / Device Role / Timing Role: One quadrant switch enabling bidirectional current flow through motor windings under PWM control. Use Value: –3 A I_C rating handles peak stall currents; –120 V V_CBO withstands back-EMF transients during rapid deceleration.

Relay Drivers

DC-DC Converters

Use Scenario: Driving electromagnetic relays with coil currents up to 2 A in industrial PLC output modules.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil energization/de-energization via microcontroller GPIO.

Use Value: –100 V V_CEO safely clamps inductive kickback; –150 mV V_CE(sat) minimizes self-heating during continuous hold state.

Use Scenario: Synchronous rectification or main switching element in non-isolated buck converters delivering 1–3 A output.

IC Role / Device Role / Timing Role: Power switch operating in hard-saturation mode with fixed base drive in low-frequency (<500 kHz) topologies.

Use Value: 900 ns storage time allows reliable operation up to ~200 kHz; 20 W T_c-referenced dissipation supports heatsink-free operation at ≤1.5 A.

Inverters

Motor Control

Use Scenario: Half-bridge leg in 24 V battery-powered inverters converting DC to 50/60 Hz AC for small appliances.

IC Role / Device Role / Timing Role: High-side PNP switch paired with NPN complement (e.g., 2SD1815T-E) in push-pull topology.

Use Value: Matched TP packaging enables symmetrical PCB layout; identical thermal resistance simplifies thermal management across complementary pair.

Use Scenario: Directional H-bridge driver stage for brushed DC motors in automotive seat adjusters or HVAC actuators.

IC Role / Device Role / Timing Role: One quadrant switch enabling bidirectional current flow through motor windings under PWM control.

Use Value: –3 A I_C rating handles peak stall currents; –120 V V_CBO withstands back-EMF transients during rapid deceleration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD122G	TO-252 (DPAK) package; –100 V V_CEO, –3 A I_C, –300 mV V_CE(sat) typ. at –1.5 A; lower f_T (100 MHz).	Higher saturation voltage increases conduction loss by ~2×; DPAK footprint differs from TP, requiring PCB redesign.	Select when TO-252 layout compatibility is prioritized over lowest possible V_CE(sat).
2SA1943	TO-3P package; –230 V V_CEO, –15 A I_C, –1.5 V V_CE(sat) typ.; significantly larger size and thermal mass.	Over-specified for 3 A applications; requires larger heatsink and board area; not drop-in compatible.	Select only when higher voltage derating (>–150 V) or parallel-device scalability is required.

Compared with MJD122G and 2SA1943, the 2SB1215T-E delivers the lowest V_CE(sat) in TP package while maintaining identical pin count and thermal profile to its NPN counterpart 2SD1815T-E - enabling matched complementary designs without layout compromise.

Availability

2SB1215T-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply, consistent h_FE binning, and halogen-free manufacturing compliance.

Supply support for 2SB1215T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SB1215T-E belongs to onsemi's general-purpose bipolar transistor family designed specifically for high-reliability, high-current switching in space-constrained industrial controls and power conversion systems.

FAQ

What is the package type and lead count for 2SB1215T-E?

The 2SB1215T-E uses the TP (TO-251) surface-mount package with four leads: pin 1 (base), pins 2 and 4 (collector, internally connected), and pin 3 (emitter). This 4-pin configuration supports dual-collector routing for improved current handling and thermal distribution without altering PCB footprint versus standard 3-pin TO-251 devices.

Is 2SB1215T-E pin-compatible with 2SD1815T-E?

Yes - the 2SB1215T-E and 2SD1815T-E share identical TP package dimensions, pin numbering, and mechanical layout. Both use pins 2 and 4 as collector (PNP) or emitter (NPN), enabling direct placement as complementary pairs in H-bridge or push-pull circuits without PCB revision.

What does the "T" suffix indicate in 2SB1215T-E?

The "T" in 2SB1215T-E denotes h_FE Rank T (200–400 at –0.5 A), distinguishing it from Rank S (140–280) versions like 2SB1215S-E. This binning ensures tighter DC current gain tolerance for applications requiring predictable base drive and reduced variation in amplifier or switch timing.

Does 2SB1215T-E meet halogen-free standards?

Yes - the 2SB1215T-E is manufactured as halogen-free per IEC 61249-2-21, with no brominated or chlorinated flame retardants in the molding compound. This satisfies environmental compliance requirements for consumer, industrial, and automotive end equipment without sacrificing electrical performance.

What is the maximum safe operating junction temperature for 2SB1215T-E?

The 2SB1215T-E has a maximum junction temperature (T_j) rating of 150°C. To maintain reliability, actual junction temperature must remain below this limit - requiring appropriate heatsinking or airflow when dissipating >1 W continuously, especially given its 20 W case-rated power dissipation at T_c = 25°C.

2SB1215T-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SB1215T-E FAQ

1.How can I place an order for 2SB1215T-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215T-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215T-E reliable?

The price and inventory of 2SB1215T-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215T-E is usually 5 days.

3.What payment methods are accepted for 2SB1215T-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215T-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215T-E?

2SB1215T-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215T-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215T-E?

For technical support, including 2SB1215T-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215T-E requirements.

6.How does Aetrix verify that 2SB1215T-E is sourced from the original manufacturer or authorized distributors?

All 2SB1215T-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215T-E meets industry standards.

7.What is the process for return or replacement of 2SB1215T-E?

All 2SB1215T-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215T-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215T-E part is unused and in its original packaging.

Return procedure for 2SB1215T-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…