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onsemi 2SB1215T-H

Part No.:
2SB1215T-H
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
Aetrix2SB1215T-H.pdf
Description:
TRANS PNP 100V 3A TP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,289

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Product details

Overview

2SB1215T-H from onsemi is a PNP bipolar junction transistor rated for –100 V VCEO, –3 A IC, and low VCE(sat) of –400 mV at –1.5 A/–0.15 A, optimized for high-current switching in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1215T-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TP package mechanical compatibility, guaranteed halogen-free compliance, and confirmed fT ≥ 130 MHz performance under VCE = –10 V / IC = –0.5 A conditions.

Technical Context

This device operates as a single PNP switch with symmetrical dual-collector configuration (pins 2 and 4 both connected to collector), enabling robust current handling and thermal distribution in high-power linear and switching topologies.

Its design supports fast switching (ton = 100 ns, tf = 50 ns) and stable DC gain linearity (hFE = 140–400 across IC = –0.5 A to –2 A), with junction temperature limited to 150°C and storage range spanning –55°C to +150°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO–100 V: Maximum safe collector-emitter voltage before breakdown under open-base condition.
IC–3 A: Continuous DC collector current rating at Tc = 25°C, defining steady-state power switching capability.
VCE(sat)–400 mV max at IC = –1.5 A / IB = –0.15 A: Low saturation voltage minimizes conduction loss in saturated-switch applications.
fT130–180 MHz: Gain-bandwidth product ensures usable high-frequency amplification or RF switching up to ~100 MHz.
hFE140–400: DC current gain range across operating currents, supporting predictable base drive sizing for diverse load conditions.
PC20 W at Tc = 25°C: Case-referenced power dissipation limit, requiring heatsinking for sustained >1 W operation.
Cob25 pF max at VCB = –10 V: Output capacitance impacts switching speed and EMI in hard-switched circuits.

Pinout & Package

Package: TP (JEITA SC-64 / JEDEC TO-251), surface-mount, 4-pin leadframe with exposed collector pads (pins 2 and 4), 0.315 g mass, 7.0 mm × 5.0 mm footprint.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal; requires –0.15 A base current to saturate at –1.5 A collector load.
2CollectorMain high-current output path; electrically tied to pin 4 for parallel current sharing and thermal spreading.
3EmitterCommon reference terminal; connected to system ground or negative rail in PNP high-side switch configurations.
4CollectorRedundant collector connection; must be soldered to same copper pour as pin 2 for rated current and thermal performance.

Key Features

FeatureDesign Value
Low VCE(sat)–400 mV max enables <1.5 W conduction loss at –1.5 A, reducing heatsink requirements in compact converters.
High fT≥130 MHz supports clean square-wave switching up to 20–30 MHz in Class C or resonant topologies.
Dual-collector layoutPins 2 and 4 provide 2× current-carrying capacity and lower thermal resistance vs. single-pin packages.
Halogen-free constructionComplies with IEC 61249-2-21, eliminating brominated flame retardants for RoHS-compliant end-product certification.
Linear hFE responseStable gain across IC = –0.5 A to –2 A simplifies analog amplifier biasing and improves current-source accuracy.

Applications

Relay DriversDC-DC Converters

Use Scenario: Driving 12 V/500 mA electromagnetic relays in industrial PLC I/O modules with microcontroller GPIO control.

IC Role / Device Role / Timing Role: PNP high-side switch providing inverted logic-level interface and full-load current sinking capability.

Use Value: –400 mV VCE(sat) limits relay coil power loss to <600 mW, preventing thermal derating at ambient >70°C.

Use Scenario: Synchronous rectification or main switch in non-isolated buck converters delivering 3.3 V/3 A from 12 V input.

IC Role / Device Role / Timing Role: Power switching transistor operating in hard-switched mode with 100 ns turn-on and 50 ns fall time.

Use Value: Dual-collector TP package sustains 20 W dissipation at Tc = 25°C, enabling 85% efficiency at full load without forced air.

InvertersMotor Control

Use Scenario: Half-bridge high-side switch in 24 V BLDC gate driver stages for small appliance fans and pumps.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor paired with NPN complement (2SD1815T-H) for complementary push-pull output stage.

Use Value: 130 MHz fT ensures minimal phase lag and overshoot during 20 kHz PWM transitions.

Use Scenario: Current-sense shunt amplifier bias transistor and H-bridge level-shift driver in 24 V brushed DC motor controllers.

IC Role / Device Role / Timing Role: Precision current mirror element and level translator with linear hFE tracking over –0.5 A to –2 A.

Use Value: hFE linearity ±10% across operating range enables <2% current-sense error without trimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GTO-252 (DPAK) package, VCEO = –100 V, IC = –2 A, VCE(sat) = –500 mV @ –1 ALower current rating and higher saturation voltage reduce efficiency in >2 A loadsSelect when DPAK footprint is required and peak current ≤ 2 A
2SA1943TO-3P package, VCEO = –230 V, IC = –15 A, VCE(sat) = –1.5 V @ –8 ALarger thermal mass and higher VCE(sat) increase board area and conduction lossSelect only for >100 V or >5 A applications where TP footprint is insufficient

Compared with MJD127G and 2SA1943, the 2SB1215T-H delivers optimal balance of low VCE(sat), compact TP packaging, and verified 3 A continuous rating-making it preferred for space-constrained, medium-power PNP switching where thermal management and PCB real estate are critical.

Availability

2SB1215T-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control circuits requiring stable component supply, halogen-free compliance, and consistent TP package form factor.

Supply support for 2SB1215T-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The 2SB1215 series belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-current, low-saturation switching in compact power conversion and electromechanical interface circuits.

FAQ

What is the package type and lead count for 2SB1215T-H?

The 2SB1215T-H uses the TP package (JEITA SC-64 / JEDEC TO-251), a 4-pin surface-mount outline with dual collector terminals (pins 2 and 4), base (pin 1), and emitter (pin 3). Its 7.0 mm × 5.0 mm footprint and 0.315 g mass support high-density PCB layouts while maintaining 20 W thermal capability at Tc = 25°C. The 2SB1215T-H is not offered in TO-220 or SOT-23 variants.

Is 2SB1215T-H halogen-free and RoHS compliant?

Yes, the 2SB1215T-H is explicitly marked "Pb Free and Halogen Free" in the official onsemi ordering information, meeting IEC 61249-2-21 and EU RoHS Directive 2011/65/EU requirements. This applies to all materials-including molding compound, leadframe, and internal die attach-ensuring full compliance for export-controlled and environmentally regulated end products.

What is the guaranteed minimum hFE for 2SB1215T-H at IC = –0.5 A?

The 2SB1215T-H has a guaranteed minimum hFE of 140 at VCE = –5 V and IC = –0.5 A, per the "Rank S" classification defined in the datasheet. This value is tested and binned during manufacturing; units labeled "T" offer hFE = 200–400 under identical conditions. The 2SB1215T-H falls under Rank T per its part number suffix "T".

Can 2SB1215T-H be used as a direct replacement for 2SB1215S-H?

No-2SB1215T-H and 2SB1215S-H share identical electrical specifications and TP packaging but differ in hFE binning: "S" denotes hFE = 140–280, while "T" guarantees hFE = 200–400. Substituting one for the other may affect base drive design and current regulation accuracy, especially in linear amplifier or precision current mirror applications using the 2SB1215T-H.

What is the maximum allowable pulse current for 2SB1215T-H?

The 2SB1215T-H supports a maximum collector current pulse (ICP) of –6 A, specified under short-duration, non-repetitive conditions per the Absolute Maximum Ratings table. This rating assumes Tj ≤ 150°C and proper PCB copper area for transient heat dissipation; sustained operation above –3 A requires active thermal management and is not recommended for continuous duty.

2SB1215T-H Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 5V
Power - Max:
1 W
Frequency - Transition:
130MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TP

2SB1215T-H FAQ

1.How can I place an order for 2SB1215T-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215T-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215T-H reliable?

The price and inventory of 2SB1215T-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215T-H is usually 5 days.

3.What payment methods are accepted for 2SB1215T-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215T-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215T-H?

2SB1215T-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215T-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215T-H?

For technical support, including 2SB1215T-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215T-H requirements.

6.How does Aetrix verify that 2SB1215T-H is sourced from the original manufacturer or authorized distributors?

All 2SB1215T-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215T-H meets industry standards.

7.What is the process for return or replacement of 2SB1215T-H?

All 2SB1215T-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215T-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215T-H part is unused and in its original packaging.

Return procedure for 2SB1215T-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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