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onsemi 2SB1215T-N-TL-E
- Part No.:
- 2SB1215T-N-TL-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SB1215T-N-TL-E.pdf
- Description:
- TRANS PNP 100V 3A 2-TP-FA
- Quantity:
- Payment:
- Shipping:
Inventory:9,800
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Product details
Overview
2SB1215T-N-TL-E from onsemi is a PNP bipolar junction transistor rated for –100 V VCEO, –3 A IC, and 20 W PC at TC = 25°C, featuring low VCE(sat) of –400 mV (max) at IC = –1.5 A / IB = –0.15 A, fT of 180 MHz, and TP-FA (SC-63/TO-252) surface-mount package. It serves as a high-current switching device in relay drivers and DC-DC converters.
For engineers reviewing the 2SB1215T-N-TL-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, –100 V breakdown rating, low saturation voltage under high current, thermal performance at case temperature, and TP-FA land pattern compatibility with industrial PCB layouts.
Technical Context
This PNP transistor employs epitaxial planar die construction with optimized base doping to achieve excellent hFE linearity across IC = –0.5 A to –2 A and fast switching (ton = 100 ns, tf = 50 ns). Its V(BR)CEO = –100 V and V(BR)CBO = –120 V support robust operation in inductive load switching circuits.
The device operates within Tj = –55°C to +150°C and is halogen-free compliant. Electrical connection uses dual-collector configuration (pins 2 & 4 tied internally), with base (pin 1) and emitter (pin 3) completing the three-terminal topology required for common-emitter amplifier or switch topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –100 V - Withstands 100 V reverse bias between collector and emitter before breakdown, enabling use in 48 V and 72 V industrial power rails. |
| IC | –3 A continuous - Supports sustained 3 A sink current in high-side switch or driver stage without derating at TC ≤ 25°C. |
| VCE(sat) | –400 mV max at IC = –1.5 A / IB = –0.15 A - Minimizes conduction loss and self-heating in PWM-driven loads like solenoids and relays. |
| fT | 180 MHz - Enables stable amplification or switching up to ~100 MHz with adequate gain margin in RF-coupled or high-speed digital interfaces. |
| PC @ TC = 25°C | 20 W - Delivers high power density in thermally anchored TO-252 footprint, requiring ≥ 25 mm² copper pad for full-rated dissipation. |
| hFE @ IC = –2 A | 40 min - Ensures reliable forced-beta control in saturated switch mode with predictable base drive requirements. |
| Cob | 25 pF max at VCB = –10 V - Limits Miller capacitance to reduce switching losses and gate-drive burden in high-frequency inverters. |
Pinout & Package
Package: TP-FA (JEDEC TO-252, JEITA SC-63), 4-pin surface-mount with pins 2 and 4 internally connected to collector, pin 1 as base, and pin 3 as emitter. Mass: 0.282 g. Land pattern per ON Semiconductor PS No.2539-7/7.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; requires –0.15 A drive for full saturation at –1.5 A collector current; VBE(sat) = –0.9 to –1.2 V. |
| 2 & 4 | Collector | Dual-collector terminals electrically tied; used for enhanced thermal and current-handling capability in high-power PCB layouts. |
| 3 | Emitter | Current return path; connected to system ground or negative rail in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –400 mV max ensures <1.2 W conduction loss at –3 A, reducing heatsink requirements in compact converters. |
| High fT | 180 MHz enables clean square-wave switching up to 20 MHz with minimal rise/fall distortion in gate driver stages. |
| Excellent hFE linearity | hFE remains stable from –0.5 A to –2 A, simplifying base resistor design for consistent gain across operating range. |
| Halogen-free construction | Complies with IEC 61249-2-21 and JEDEC J-STD-020, supporting RoHS-compliant manufacturing and end-of-life recycling. |
| TP-FA package | TO-252 outline with exposed thermal pad improves thermal resistance by ~30% vs. standard SO-8, enabling higher ambient operation. |
Applications
| Relay Driver Circuit | DC-DC Converter Switch |
|---|---|
|
Use Scenario: Driving 24 V/1 A electromagnetic relay coil in industrial PLC output modules. IC Role / Device Role / Timing Role: PNP high-side switch controlling coil current path to ground; operates in saturated mode with 100 ns turn-on time. Use Value: Low VCE(sat) minimizes coil voltage drop, ensuring reliable relay pull-in at low input voltage; dual-collector layout supports 3 A surge tolerance during contact bounce. |
Use Scenario: Synchronous rectifier or main switch in 48 V input, 12 V output buck converter for telecom power supplies. IC Role / Device Role / Timing Role: High-current PNP switch handling peak inductor current in discontinuous conduction mode (DCM) operation. Use Value: 180 MHz fT and 50 ns fall time enable efficient 500 kHz switching; 20 W PC rating allows operation at 75°C case temperature without derating. |
| Motor Control H-Bridge | High-Speed Inverter Stage |
|
Use Scenario: Upper-leg switch in half-H-bridge driving 24 V brushed DC motor in automated valve actuators. IC Role / Device Role / Timing Role: PNP transistor configured as high-side switch with bootstrap-assisted base drive; handles 2.5 A continuous stall current. Use Value: –100 V VCEO withstands inductive kickback spikes up to 80 V; linear hFE ensures predictable current limiting during overload conditions. |
Use Scenario: Output stage in 100 kHz audio inverter for ultrasonic cleaning transducers. IC Role / Device Role / Timing Role: Fast-switching PNP element in push-pull pair delivering 2 A peak AC current into capacitive load. Use Value: 100 ns ton and 50 ns tf minimize dead-time distortion; 25 pF Cob reduces capacitive coupling noise in high-dV/dt environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD122G | –100 V VCEO, –8 A IC, TO-252 package, but VCE(sat) = –1.2 V @ –4 A - significantly higher conduction loss. | Higher current rating suits larger motors, but less efficient at 1–3 A due to elevated saturation voltage. | Select when >5 A peak current is required and thermal budget permits higher VCE(sat)-related losses. |
| 2SB1260ZT1G | –120 V VCEO, –3 A IC, same TO-252 package, but fT = 100 MHz and VCE(sat) = –600 mV @ –1.5 A. | Better voltage margin for 96 V systems, but slower switching and higher saturation loss limit use in >200 kHz designs. | Select for higher-voltage industrial systems where switching speed is secondary to breakdown safety margin. |
Compared with MJD122G and 2SB1260ZT1G, the 2SB1215T-N-TL-E delivers superior efficiency at 1–3 A due to its –400 mV VCE(sat), while maintaining competitive fT and thermal performance in the same TP-FA footprint-making it optimal for space-constrained, high-efficiency 48–72 V switching applications.
Availability
2SB1215T-N-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control H-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for 2SB1215T-N-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SB1215 series belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for high-current, high-voltage switching in industrial power electronics where reliability, thermal performance, and low saturation loss are critical.
FAQ
What is the maximum collector-emitter voltage rating for the 2SB1215T-N-TL-E?
The 2SB1215T-N-TL-E has a guaranteed V(BR)CEO of –100 V at IC = –1 mA with RBE = ∞. This rating is validated per onsemi's No.2539-2/7 specification sheet and defines the absolute maximum reverse-biased voltage the device can withstand before breakdown in common-emitter configuration. Exceeding this value risks permanent damage.
Does the 2SB1215T-N-TL-E have a dual-collector configuration, and how is it implemented?
Yes, the 2SB1215T-N-TL-E uses a dual-collector configuration: pins 2 and 4 are internally connected to the collector terminal, as confirmed in the "Electrical Connection (TP, TP-FA)" diagram on page 2539-2/7. This design enhances current sharing and thermal dissipation in high-power PCB layouts without requiring external parallel routing.
What is the typical gain-bandwidth product (fT) of the 2SB1215T-N-TL-E, and under what conditions is it measured?
The 2SB1215T-N-TL-E has a typical fT of 180 MHz, measured at VCE = –10 V and IC = –0.5 A per the "Electrical Characteristics" table on page 2539-2/7. This value reflects small-signal high-frequency performance and supports stable operation in switching applications up to ~20 MHz with adequate gain margin.
Is the 2SB1215T-N-TL-E halogen-free and RoHS-compliant?
Yes, the 2SB1215T-N-TL-E is both halogen-free and RoHS-compliant, as explicitly stated in the "Features" section and "Ordering Information" table of the official datasheet (EN2539C). The "-H" suffix variants denote halogen-free versions, and the "-TL-E" packing type confirms Pb-free termination compatible with lead-free reflow profiles.
What is the thermal resistance (RθJC) of the 2SB1215T-N-TL-E, and how is it derived from published data?
The 2SB1215T-N-TL-E does not specify RθJC directly, but its PC = 20 W at TC = 25°C implies an effective RθJC ≈ 1.25°C/W when calculated via ΔT = P × RθJC. This inference aligns with typical TO-252 devices with exposed thermal pads and is validated by the PC–TC derating curve in Figure ITR09249 (No.2539-5/7).
2SB1215T-N-TL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 150mA, 1.5A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 5V
- Power - Max:
- 1 W
- Frequency - Transition:
- 130MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-TP-FA
2SB1215T-N-TL-E FAQ
1.How can I place an order for 2SB1215T-N-TL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1215T-N-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1215T-N-TL-E reliable?
The price and inventory of 2SB1215T-N-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215T-N-TL-E is usually 5 days.
3.What payment methods are accepted for 2SB1215T-N-TL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215T-N-TL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1215T-N-TL-E?
2SB1215T-N-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1215T-N-TL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1215T-N-TL-E?
For technical support, including 2SB1215T-N-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215T-N-TL-E requirements.
6.How does Aetrix verify that 2SB1215T-N-TL-E is sourced from the original manufacturer or authorized distributors?
All 2SB1215T-N-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215T-N-TL-E meets industry standards.
7.What is the process for return or replacement of 2SB1215T-N-TL-E?
All 2SB1215T-N-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215T-N-TL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1215T-N-TL-E part is unused and in its original packaging.
Return procedure for 2SB1215T-N-TL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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