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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1215T-TL-H

Name: 2SB1215T-TL-H
Brand: onsemi
SKU: 2SB1215T-TL-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1215T-TL-H

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1215T-TL-H.pdf

Description:: TRANS PNP 100V 3A TP-FA

Quantity:: RFQ Add To RFQ list

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Inventory:10,500

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Product details

Overview

2SB1215T-TL-H from onsemi is a PNP bipolar junction transistor rated for –100 V V_CEO, –3 A I_C, and low –150 mV typical V_CE(sat) at –1.5 A/–0.15 A, housed in a TP-FA (SC-63/TO-252) surface-mount package. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1215T-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, confirmed TP-FA thermal performance (20 W @ T_c = 25°C), halogen-free compliance, and documented h_FE rank T (200–400 @ –0.5 A).

Technical Context

This PNP transistor operates with reverse-polarity biasing: base-emitter and base-collector junctions are forward- and reverse-biased respectively during active conduction. Its design supports fast switching (t_on = 100 ns, t_f = 50 ns) and stable gain linearity across collector current range.

The device uses a planar epitaxial structure optimized for low saturation voltage and high f_T (180 MHz typ. @ –10 V, –0.5 A). Thermal dissipation is managed via the TP-FA package's exposed drain pad (Pin 2 & 4), enabling 20 W case-rated power handling at 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	–100 V - Maximum safe collector-emitter blocking voltage under open-base condition
I_C	–3 A - Continuous DC collector current rating without derating at T_c = 25°C
V_CE(sat)	–150 mV typ. @ –1.5 A/–0.15 A - Low conduction loss enabling efficient high-current switching
h_FE	200–400 @ –5 V, –0.5 A (Rank T) - Predictable current amplification for stable bias design
f_T	180 MHz typ. @ –10 V, –0.5 A - Supports high-speed switching up to ~100 ns transition times
P_C (T_c=25°C)	20 W - High thermal capability enabled by TP-FA copper slug mounting
T_j	150°C - Maximum junction temperature defining safe operating area limits

Pinout & Package

2SB1215T-TL-H uses the TP-FA package (JEDEC TO-252, JEITA SC-63), featuring an exposed collector thermal pad (Pins 2 & 4) and standardized 3-pin layout for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires negative bias relative to emitter to turn on PNP device
2 & 4	Collector	Common high-current output node; electrically tied and thermally connected to exposed copper pad
3	Emitter	Power return path; typically tied to system ground or positive rail in high-side switch configurations

Key Features

Feature	Design Value
Low V_CE(sat)	–150 mV typical enables <150 mW conduction loss at –1.5 A, reducing thermal load in compact layouts
High f_T	180 MHz typical supports clean square-wave switching in inverters up to 100 kHz fundamental frequency
Fast switching	t_on = 100 ns, t_f = 50 ns - minimizes overlap loss in complementary PWM stages
Halogen-free construction	Meets IEC 61249-2-21 and JEDEC J-STD-020 standards for environmentally compliant manufacturing
TP-FA thermal design	Exposed collector pad provides low thermal resistance path to PCB copper, supporting 20 W case dissipation

Applications

Relay Driver Circuit	DC-DC Converter Switch
Use Scenario: Driving electromagnetic relays requiring >1 A coil current in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-current PNP switch sinking relay coil current to ground when base is pulled low. Use Value: –150 mV V_CE(sat) ensures <150 mW power loss per switch, eliminating need for heatsinks in space-constrained DIN-rail enclosures.	Use Scenario: Upper-side switching element in non-isolated buck or SEPIC converter topologies. IC Role / Device Role / Timing Role: Synchronous PNP switch controlling energy transfer from input to inductor during ON-time. Use Value: 180 MHz f_T and 50 ns fall time support stable operation at 200 kHz switching frequencies with minimal dead-time penalty.
Inverter Output Stage	High-Speed Logic Interface
Use Scenario: Push-pull output stage in motor drive inverters delivering 2–3 A peak phase current. IC Role / Device Role / Timing Role: Complementary PNP device paired with NPN 2SD1815T-TL-H in totem-pole configuration. Use Value: Matched h_FE rank (T) and symmetric switching specs (t_on/t_f) minimize shoot-through risk in gate-driving circuits.	Use Scenario: Level-shifting interface between 3.3 V logic controllers and –5 V analog signal chains. IC Role / Device Role / Timing Role: Fast-switching PNP inverter translating TTL/CMOS signals to negative-voltage domains. Use Value: 100 ns turn-on time ensures sub-microsecond propagation delay, preserving timing margins in real-time control loops.

Relay Driver Circuit

DC-DC Converter Switch

Use Scenario: Driving electromagnetic relays requiring >1 A coil current in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-current PNP switch sinking relay coil current to ground when base is pulled low.

Use Value: –150 mV V_CE(sat) ensures <150 mW power loss per switch, eliminating need for heatsinks in space-constrained DIN-rail enclosures.

Use Scenario: Upper-side switching element in non-isolated buck or SEPIC converter topologies.

IC Role / Device Role / Timing Role: Synchronous PNP switch controlling energy transfer from input to inductor during ON-time.

Use Value: 180 MHz f_T and 50 ns fall time support stable operation at 200 kHz switching frequencies with minimal dead-time penalty.

Inverter Output Stage

High-Speed Logic Interface

Use Scenario: Push-pull output stage in motor drive inverters delivering 2–3 A peak phase current.

IC Role / Device Role / Timing Role: Complementary PNP device paired with NPN 2SD1815T-TL-H in totem-pole configuration.

Use Value: Matched h_FE rank (T) and symmetric switching specs (t_on/t_f) minimize shoot-through risk in gate-driving circuits.

Use Scenario: Level-shifting interface between 3.3 V logic controllers and –5 V analog signal chains.

IC Role / Device Role / Timing Role: Fast-switching PNP inverter translating TTL/CMOS signals to negative-voltage domains.

Use Value: 100 ns turn-on time ensures sub-microsecond propagation delay, preserving timing margins in real-time control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD122G	V_CEO = –100 V, I_C = –3 A, but V_CE(sat) = –500 mV max @ –1.5 A - higher conduction loss	Lacks halogen-free certification; not qualified for RoHS-compliant automotive-grade assemblies	Select when cost sensitivity outweighs thermal efficiency; verify layout cooling for >300 mW loss
2SB1260ZT1G	V_CEO = –120 V, I_C = –2 A, f_T = 120 MHz - lower current rating and bandwidth	Uses SOT-223 package (lower thermal capacity); unsuitable for sustained >1.5 A operation	Choose only for voltage-margin-critical designs where 200 mV higher V_CEO justifies 33% current derating

Compared with MJD122G and 2SB1260ZT1G, the 2SB1215T-TL-H delivers superior thermal performance (20 W case rating), lowest verified V_CE(sat), and halogen-free compliance - making it optimal for high-density, high-reliability industrial switching where efficiency and regulatory alignment are mandatory.

Availability

2SB1215T-TL-H is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and high-speed inverters requiring stable component supply, consistent halogen-free compliance, and verified TP-FA thermal performance.

Supply support for 2SB1215T-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2SB1215 series belongs to onsemi's general-purpose bipolar transistor product line, engineered specifically for high-current, high-speed switching in space-constrained industrial power systems.

FAQ

What is the maximum continuous collector current rating for the 2SB1215T-TL-H?

The 2SB1215T-TL-H is rated for –3 A continuous collector current (I_C) at case temperature T_c = 25°C. Derating is required above this temperature per the PC–Tc curve in the datasheet; at T_c = 100°C, the usable I_C drops to approximately –1.2 A. This rating assumes proper PCB copper area for thermal conduction from the TP-FA package's exposed collector pad.

Is the 2SB1215T-TL-H pin-compatible with the 2SB1215S-TL-H?

Yes, the 2SB1215T-TL-H and 2SB1215S-TL-H share identical TP-FA package pinout (Pin 1 = Base, Pins 2 & 4 = Collector, Pin 3 = Emitter) and mechanical footprint. The only difference is h_FE rank: 'T' denotes 200–400 gain at –0.5 A, while 'S' denotes 140–280. No PCB changes are needed when substituting between these variants.

Does the 2SB1215T-TL-H meet halogen-free requirements?

Yes, the 2SB1215T-TL-H is explicitly marked 'H' in its ordering code and certified halogen-free per IEC 61249-2-21. This is confirmed in the "Ordering Information" table and "Features" section of the official datasheet (Document No. 2539), distinguishing it from 'E'-suffixed Pb-free-only variants.

What is the typical gain-bandwidth product (f_T) of the 2SB1215T-TL-H?

The 2SB1215T-TL-H has a typical f_T of 180 MHz measured at V_CE = –10 V and I_C = –0.5 A. This value is specified in the "Electrical Characteristics" table and reflects the device's high-frequency switching capability, supporting clean transitions in applications up to several hundred kHz.

Can the 2SB1215T-TL-H be used in avalanche mode?

No, the 2SB1215T-TL-H is not rated or characterized for avalanche operation. Its Absolute Maximum Ratings specify only V_(BR)CEO = –100 V under standard test conditions (I_C = –1 mA, R_BE = ∞). Operation beyond recommended conditions - including intentional avalanche - may cause irreversible degradation or failure.

2SB1215T-TL-H Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 150mA, 1.5A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SB1215T-TL-H FAQ

1.How can I place an order for 2SB1215T-TL-H through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1215T-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1215T-TL-H reliable?

The price and inventory of 2SB1215T-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1215T-TL-H is usually 5 days.

3.What payment methods are accepted for 2SB1215T-TL-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1215T-TL-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1215T-TL-H?

2SB1215T-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1215T-TL-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1215T-TL-H?

For technical support, including 2SB1215T-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1215T-TL-H requirements.

6.How does Aetrix verify that 2SB1215T-TL-H is sourced from the original manufacturer or authorized distributors?

All 2SB1215T-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1215T-TL-H meets industry standards.

7.What is the process for return or replacement of 2SB1215T-TL-H?

All 2SB1215T-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1215T-TL-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1215T-TL-H part is unused and in its original packaging.

Return procedure for 2SB1215T-TL-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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