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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1216S-E

Name: 2SB1216S-E
Brand: onsemi
SKU: 2SB1216S-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SB1216S-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: 2SB1216S-E.pdf

Description:: TRANS PNP 100V 4A TP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SB1216S-E from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, and 1 W at T_C = 25°C, with low V_CE(sat) of −400 mV at I_C = −2 A / I_B = −0.2 A, f_T up to 180 MHz, and h_FE range 140–400. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1216S-E datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, IPAK package thermal performance, −100 V breakdown rating, fast switching (t_on = 100 ns, t_f = 50 ns), and h_FE linearity across 0.5–3 A.

Technical Context

This PNP transistor operates in linear and saturated switching modes with guaranteed V_(BR)CEO = −100 V and V_(BR)CBO = −120 V. Its f_T = 180 MHz and C_ob = 40 pF support high-speed switching in inverters and converter topologies where gain-bandwidth and output capacitance directly impact rise/fall behavior.

The device uses an IPAK (TP) package with dual collector terminals (pins 2 and 4), base on pin 1, and emitter on pin 3 - enabling low-inductance, high-current paths. Thermal dissipation is rated at 20 W at T_C = 25°C, confirming suitability for heatsink-mounted power switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V: Maximum safe collector-emitter voltage under open-base conditions; defines blocking capability in high-side PNP switch configurations.
I_C	−4 A continuous: Rated DC collector current; supports robust load switching without derating at T_C ≤ 25°C.
V_CE(sat)	−400 mV @ I_C=−2 A/I_B=−0.2 A: Low saturation voltage minimizes conduction loss and self-heating in power stage designs.
f_T	180 MHz: Gain-bandwidth product enables stable high-frequency amplification or fast switching up to ~10–20 MHz practical operation.
h_FE	140–400 @ V_CE=−5 V: Wide, linear DC current gain range ensures predictable base drive requirements across operating currents.
t_f	50 ns: Fast fall time reduces switching transition losses and EMI generation in PWM-driven circuits.
P_C (T_C=25°C)	20 W: Package-level power dissipation limit when mounted on heatsink; enables high-duty-cycle operation in compact thermal layouts.

Pinout & Package

2SB1216S-E is housed in the IPAK (TP) surface-mount package (Case 369AJ), featuring four leads with pins 2 and 4 both connected to the collector for enhanced current handling and thermal spreading. The package is Pb-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; accepts base current to bias transistor into active or saturation region; requires series resistor for current limiting.
2	Collector	Main high-current output terminal; electrically tied to pin 4; used for power path connection to load or supply rail.
3	Emitter	Common reference terminal for PNP operation; typically connected to higher potential (e.g., V_CC) in high-side switch configurations.
4	Collector	Second collector terminal; paralleled internally with pin 2 to reduce bond wire inductance and improve thermal conduction to PCB copper.

Key Features

Feature	Design Value
Low V_CE(sat)	−400 mV at −2 A ensures <1 W conduction loss per device, critical for thermally constrained relay and converter designs.
Dual-collector IPAK layout	Pins 2 & 4 both connect to collector, lowering effective package inductance and improving heat transfer to PCB copper pour.
High f_T and low C_ob	180 MHz f_T and 40 pF C_ob enable clean switching edges and reduced gate-drive interaction in high-frequency inverters.
h_FE linearity	h_FE maintains monotonic behavior from 0.5 A to 3 A, simplifying base drive design and improving current regulation accuracy.
Fast switching times	t_on = 100 ns, t_f = 50 ns, and t_stg = 900 ns allow efficient operation in 100–500 kHz PWM stages with minimal dead-time overhead.

Applications

Relay Driver Circuits	DC-DC Converter Switches
Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current with fast turn-off to prevent contact arcing. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil ground path in high-side configuration. Use Value: −400 mV V_CE(sat) limits relay coil voltage drop, ensuring full-rated pull-in voltage; 50 ns fall time suppresses back-EMF-induced contact bounce.	Use Scenario: Synchronous rectifier or main switch in non-isolated buck/boost converters operating up to 300 kHz. IC Role / Device Role / Timing Role: Power switching element in high-side PNP topology, paired with NPN complement 2SD1816S-E. Use Value: 180 MHz f_T and 40 pF C_ob minimize switching losses; dual-collector IPAK supports >3 A average current with low thermal resistance.
Inverter Output Stages	Industrial Motor Control Modules
Use Scenario: Half-bridge leg in 24–48 V DC input inverters powering small AC motors or solenoids. IC Role / Device Role / Timing Role: High-speed PNP switch providing complementary drive with matched timing characteristics to 2SD1816S-E. Use Value: Matched t_on/t_f (100 ns / 50 ns) and symmetric V_CE(sat) ensure balanced dead-time control and reduced shoot-through risk.	Use Scenario: Current-sense amplifier front-end or protection circuit driver in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Robust interface transistor isolating microcontroller GPIO from inductive loads (valves, indicators, solenoids). Use Value: −100 V V_CEO withstands inductive kickback; 150°C T_j rating ensures reliability in sealed industrial enclosures.

Relay Driver Circuits

DC-DC Converter Switches

Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current with fast turn-off to prevent contact arcing.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil ground path in high-side configuration.

Use Value: −400 mV V_CE(sat) limits relay coil voltage drop, ensuring full-rated pull-in voltage; 50 ns fall time suppresses back-EMF-induced contact bounce.

Use Scenario: Synchronous rectifier or main switch in non-isolated buck/boost converters operating up to 300 kHz.

IC Role / Device Role / Timing Role: Power switching element in high-side PNP topology, paired with NPN complement 2SD1816S-E.

Use Value: 180 MHz f_T and 40 pF C_ob minimize switching losses; dual-collector IPAK supports >3 A average current with low thermal resistance.

Inverter Output Stages

Industrial Motor Control Modules

Use Scenario: Half-bridge leg in 24–48 V DC input inverters powering small AC motors or solenoids.

IC Role / Device Role / Timing Role: High-speed PNP switch providing complementary drive with matched timing characteristics to 2SD1816S-E.

Use Value: Matched t_on/t_f (100 ns / 50 ns) and symmetric V_CE(sat) ensure balanced dead-time control and reduced shoot-through risk.

Use Scenario: Current-sense amplifier front-end or protection circuit driver in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Robust interface transistor isolating microcontroller GPIO from inductive loads (valves, indicators, solenoids).

Use Value: −100 V V_CEO withstands inductive kickback; 150°C T_j rating ensures reliability in sealed industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SB1260ZGT1G	V_CEO = −100 V, I_C = −3 A, V_CE(sat) = −500 mV @ −2 A, IPAK package, f_T = 120 MHz	Lower current rating and higher saturation voltage; suitable only for ≤2.5 A loads	Select when lower cost or legacy qualification is prioritized over 4 A headroom and 180 MHz bandwidth.
MJD2955RLG	V_CEO = −70 V, I_C = −10 A, V_CE(sat) = −1.2 V @ −5 A, TO-252 package, f_T = 3 MHz	Higher current but lower voltage rating and much slower switching; not suitable for >60 V systems or >100 kHz operation	Choose only for low-frequency, high-current linear regulation where V_CEO margin and speed are secondary.

Compared with 2SB1216S-E, 2SB1260ZGT1G trades 1 A current headroom and 60 MHz bandwidth for broader second-source availability, while MJD2955RLG offers higher I_C but sacrifices voltage safety margin and switching speed - making 2SB1216S-E optimal for 100 V, 2–4 A, high-frequency switching where thermal efficiency and edge fidelity matter.

Availability

2SB1216S-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control modules requiring stable component supply, Pb-free compliance, and IPAK thermal performance.

Supply support for 2SB1216S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2SB1216S-E belongs to onsemi's general-purpose bipolar power transistor family, engineered specifically for high-current, high-voltage switching in compact surface-mount power stages where low V_CE(sat), fast transitions, and thermal robustness are essential.

FAQ

What is the maximum continuous collector current rating for the 2SB1216S-E?

The 2SB1216S-E is rated for −4 A continuous collector current (I_C) at T_A = 25°C. Derating applies above ambient temperature; the datasheet specifies 20 W total package dissipation at T_C = 25°C, meaning sustained −4 A operation requires proper heatsinking to maintain case temperature at or below 25°C. At higher case temperatures, allowable current decreases linearly per the thermal resistance curve.

Is the 2SB1216S-E pin-compatible with the 2SD1816S-E?

No, the 2SB1216S-E and 2SD1816S-E are complementary PNP/NPN transistors with identical IPAK package pinouts (pin 1 = base, pins 2 & 4 = collector/emitter swapped), but they are not pin-compatible replacements. The 2SB1216S-E has pin 3 as emitter and pins 2/4 as collector, whereas the 2SD1816S-E has pin 3 as collector and pins 2/4 as emitter - requiring board layout changes for substitution.

What does the "S-E" suffix indicate in 2SB1216S-E?

The "S-E" suffix in 2SB1216S-E denotes a Pb-free (RoHS-compliant), IPAK-packaged version with tape-and-reel shipping (500 units per bag). The "S" indicates standard lead finish (matte tin), and "E" confirms Pb-free processing per J-STD-609. This distinguishes it from "T-E" (tape-and-reel) and "-H" (halogen-free) variants in the same family.

Can the 2SB1216S-E be used in linear amplifier applications?

Yes, the 2SB1216S-E supports linear operation with verified h_FE linearity from 0.5 A to 3 A and f_T = 180 MHz, making it suitable for Class-A or AB audio preamplifier stages and precision current sources. However, its 1 W ambient-rated dissipation requires careful thermal design; linear use above 100 mW demands heatsinking to avoid junction temperature exceedance beyond 150°C.

What is the guaranteed minimum h_FE for the 2SB1216S-E at I_C = −0.5 A?

The guaranteed minimum h_FE for the 2SB1216S-E at V_CE = −5 V and I_C = −0.5 A is 140, corresponding to the "S" rank bin. The datasheet specifies h_FE ranges: S rank = 140–280, T rank = 200–400. The 2SB1216S-E is shipped in the S rank unless otherwise specified, ensuring h_FE ≥ 140 under those test conditions.

2SB1216S-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TP

2SB1216S-E FAQ

1.How can I place an order for 2SB1216S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1216S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1216S-E reliable?

The price and inventory of 2SB1216S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1216S-E is usually 5 days.

3.What payment methods are accepted for 2SB1216S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1216S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1216S-E?

2SB1216S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1216S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1216S-E?

For technical support, including 2SB1216S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1216S-E requirements.

6.How does Aetrix verify that 2SB1216S-E is sourced from the original manufacturer or authorized distributors?

All 2SB1216S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1216S-E meets industry standards.

7.What is the process for return or replacement of 2SB1216S-E?

All 2SB1216S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1216S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1216S-E part is unused and in its original packaging.

Return procedure for 2SB1216S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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