Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2SB1216S-TL-E

Name: 2SB1216S-TL-E
Brand: onsemi
SKU: 2SB1216S-TL-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SB1216S-TL-E

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 2SB1216S-TL-E.pdf

Description:: TRANS PNP 100V 4A TP-FA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,071

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SB1216S-TL-E from onsemi is a PNP bipolar junction transistor rated for −100 V V_CEO, −4 A I_C, and 1 W at T_c = 25°C, with low V_CE(sat) of −400 mV at I_C = −2 A / I_B = −0.2 A, f_T = 180 MHz, and DPAK (TP-FA) surface-mount package. It serves as a high-current switching device in relay drivers and DC-DC converters.

For engineers reviewing the 2SB1216S-TL-E datasheet, pinout, applications, or equivalent options, key selection factors include verified PNP polarity, confirmed DPAK thermal performance (20 W at T_c), documented fast switching (t_on = 100 ns, t_f = 50 ns), and h_FE range of 140–400 at I_C = −0.5 A.

Technical Context

This PNP transistor operates in linear and saturated switching modes, with V_(BR)CEO = −100 V ensuring robust blocking capability in high-side switch configurations. Its f_T = 180 MHz and low C_ob = 40 pF support high-speed switching up to several hundred kHz in power conversion stages.

The device features dual-collector construction (pins 2 and 4 both connected to collector), enabling enhanced current handling and thermal distribution in compact layouts. Confirmed h_FE linearity across I_C = −0.5 A to −3 A supports stable gain control in analog driver circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−100 V: Maximum safe collector-emitter voltage under open-base conditions; defines high-side switch blocking rating
I_C	−4 A continuous: Sustained current-handling capacity at T_c = 25°C; enables use in 3–5 W load switching
V_CE(sat)	−400 mV max at I_C = −2 A / I_B = −0.2 A: Low conduction loss reduces heat generation in saturated switching
f_T	180 MHz typical: Supports high-frequency switching in inverters and SMPS with minimal gain roll-off
h_FE	140–400 at I_C = −0.5 A: Wide DC current gain range allows flexible base drive design
t_f	50 ns max: Fast fall time minimizes switching transition losses in PWM applications
P_C (T_c = 25°C)	1 W: Power dissipation limit at case temperature; derates to zero at T_j = 150°C

Pinout & Package

DPAK (TP-FA) surface-mount package per Case 369AH, with exposed drain pad thermally connected to collector. Dimensions: 7.0 × 6.2 × 2.3 mm (L × W × H). Recommended solder footprint provided in datasheet Figure 6.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires −0.2 A drive current to saturate at −2 A collector load
2	Collector	Main current sink node; electrically tied to pin 4; connects to heatsink via exposed pad
3	Emitter	Current source reference; tied to system ground or positive rail in high-side configuration
4	Collector	Second collector terminal; parallel connection with pin 2 improves current sharing and thermal path

Key Features

Feature	Design Value
Low V_CE(sat)	−400 mV max ensures <0.8 W conduction loss at −2 A, reducing heatsink requirements
Dual-collector structure	Pins 2 and 4 both connect to collector, lowering effective R_thJC and improving thermal reliability
High f_T	180 MHz enables clean square-wave switching up to 500 kHz without gain collapse
h_FE linearity	Stable gain from I_C = −0.5 A to −3 A supports predictable base resistor sizing across load range
Fast switching	t_on = 100 ns, t_f = 50 ns minimize dead-time losses in half-bridge and inverter topologies

Applications

Relay Drivers	DC-DC Converters
Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current at 24 VDC. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil return path to ground. Use Value: Low V_CE(sat) limits relay coil voltage drop to ≤0.4 V, ensuring full actuation margin.	Use Scenario: Synchronous rectification or main switch in non-isolated buck/boost converters. IC Role / Device Role / Timing Role: Primary PNP switching element in high-side configuration with fast turn-off. Use Value: 50 ns fall time enables >200 kHz operation while maintaining <5% switching loss.
Inverters	Industrial Control Outputs
Use Scenario: Half-bridge leg in 100–200 W motor inverters operating at 10–20 kHz. IC Role / Device Role / Timing Role: High-speed PNP switch paired with NPN complement in totem-pole output stage. Use Value: 180 MHz f_T maintains gain stability across full PWM duty cycle range.	Use Scenario: Solid-state replacement for mechanical contactors in PLC output modules. IC Role / Device Role / Timing Role: Robust PNP output stage switching 3–4 A loads with surge tolerance. Use Value: −8 A pulse rating (I_CP) handles inductive kickback without snubber circuitry.

Relay Drivers

DC-DC Converters

Use Scenario: Driving electromagnetic relays requiring ≥2 A coil current at 24 VDC.

IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil return path to ground.

Use Value: Low V_CE(sat) limits relay coil voltage drop to ≤0.4 V, ensuring full actuation margin.

Use Scenario: Synchronous rectification or main switch in non-isolated buck/boost converters.

IC Role / Device Role / Timing Role: Primary PNP switching element in high-side configuration with fast turn-off.

Use Value: 50 ns fall time enables >200 kHz operation while maintaining <5% switching loss.

Inverters

Industrial Control Outputs

Use Scenario: Half-bridge leg in 100–200 W motor inverters operating at 10–20 kHz.

IC Role / Device Role / Timing Role: High-speed PNP switch paired with NPN complement in totem-pole output stage.

Use Value: 180 MHz f_T maintains gain stability across full PWM duty cycle range.

Use Scenario: Solid-state replacement for mechanical contactors in PLC output modules.

IC Role / Device Role / Timing Role: Robust PNP output stage switching 3–4 A loads with surge tolerance.

Use Value: −8 A pulse rating (I_CP) handles inductive kickback without snubber circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD2955G	V_CEO = −70 V, I_C = −10 A, V_CE(sat) = −1.2 V @ −5 A - lower voltage rating, higher current, higher saturation loss	Suitable for lower-voltage (≤48 V) industrial controls where higher I_C matters more than low V_CE(sat)	Select when system V_CC ≤ 60 V and peak current > 5 A is required; not interchangeable above 70 V
2SA1943	V_CEO = −230 V, I_C = −15 A, f_T = 30 MHz - higher voltage/current, much lower bandwidth	Better for audio amplifiers and high-voltage linear regulators where speed is secondary to SOA	Choose for linear operation or >100 V blocking; avoid in >100 kHz switching due to limited f_T

Compared with MJD2955G and 2SA1943, the 2SB1216S-TL-E uniquely balances −100 V rating, −4 A current, low −400 mV V_CE(sat), and 180 MHz f_T, making it optimal for compact, medium-voltage, high-speed switching where thermal efficiency and bandwidth are jointly critical.

Availability

2SB1216S-TL-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, inverters, and industrial control outputs requiring stable component supply and Pb-free compliance.

Supply support for 2SB1216S-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2SB1216S-TL-E belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for high-reliability, high-current switching in space-constrained industrial and power conversion equipment.

FAQ

What is the package type and lead finish of the 2SB1216S-TL-E?

The 2SB1216S-TL-E uses the DPAK (TP-FA) surface-mount package per Case 369AH, with Pb-free (RoHS-compliant) termination. It ships in tape-and-reel format (700 units per reel) and features an exposed collector pad for thermal enhancement. Pin 1 is Base, pins 2 and 4 are Collector, and pin 3 is Emitter - all verified in the official onsemi datasheet Rev. 2.

Does the 2SB1216S-TL-E have a dual-collector configuration, and how does it affect layout?

Yes, the 2SB1216S-TL-E has two collector terminals (pins 2 and 4), internally connected to the same node and to the exposed thermal pad. This configuration lowers effective junction-to-case thermal resistance and allows PCB copper pour to be routed to both pins, improving heat dissipation. Layout must connect both collector pins and the thermal pad to the same low-impedance ground or power plane.

What is the guaranteed h_FE range for the 2SB1216S-TL-E at I_C = −3 A?

At I_C = −3 A and V_CE = −5 V, the 2SB1216S-TL-E guarantees h_FE ≥ 40 (minimum), as specified in the Electrical Characteristics table. The "S" suffix denotes the standard h_FE rank (140–280 at I_C = −0.5 A); this lower-gain band ensures consistent performance under high-current saturation conditions.

Can the 2SB1216S-TL-E replace the 2SB1216S-E in a design?

No - the 2SB1216S-TL-E (DPAK/TP-FA) and 2SB1216S-E (IPAK/TP) differ in package, thermal performance, and mounting. While both share identical electrical specs, the DPAK version has lower thermal resistance and different pin pitch (2.54 mm vs. 5.08 mm). PCB redesign and requalification are required; they are not drop-in replacements.

What is the maximum safe operating frequency for switching applications using the 2SB1216S-TL-E?

The 2SB1216S-TL-E supports reliable switching up to 500 kHz in optimized circuits, based on its 180 MHz f_T, 50 ns fall time, and low C_ob = 40 pF. For sustained operation, practical limits are ~200 kHz in hard-switched converters and ~300 kHz in resonant topologies - validated by onsemi's typical switching waveforms in the datasheet.

2SB1216S-TL-E Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 500mA, 5V

Power - Max:: 1 W

Frequency - Transition:: 130MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TP-FA

2SB1216S-TL-E FAQ

1.How can I place an order for 2SB1216S-TL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SB1216S-TL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SB1216S-TL-E reliable?

The price and inventory of 2SB1216S-TL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1216S-TL-E is usually 5 days.

3.What payment methods are accepted for 2SB1216S-TL-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1216S-TL-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SB1216S-TL-E?

2SB1216S-TL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SB1216S-TL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SB1216S-TL-E?

For technical support, including 2SB1216S-TL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1216S-TL-E requirements.

6.How does Aetrix verify that 2SB1216S-TL-E is sourced from the original manufacturer or authorized distributors?

All 2SB1216S-TL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1216S-TL-E meets industry standards.

7.What is the process for return or replacement of 2SB1216S-TL-E?

All 2SB1216S-TL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1216S-TL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SB1216S-TL-E part is unused and in its original packaging.

Return procedure for 2SB1216S-TL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…