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onsemi 2SB1216T-E
- Part No.:
- 2SB1216T-E
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
2SB1216T-E.pdf
- Description:
- TRANS PNP 100V 4A TP
- Quantity:
- Payment:
- Shipping:
Inventory:2,471
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Product details
Overview
2SB1216T-E from onsemi is a PNP bipolar junction transistor rated for −100 V VCEO, −4 A IC, and 1 W at Tc = 25°C, with low VCE(sat) of −400 mV at IC = −2 A / IB = −0.2 A, used in high-current switching circuits such as relay drivers and DC-DC converters.
For engineers reviewing the 2SB1216T-E datasheet, pinout, applications, or equivalent options, key selection criteria include its −100 V breakdown rating, 180 MHz fT, dual-collector DPAK package configuration, and verified performance in fast-switching industrial power stages.
Technical Context
The 2SB1216T-E operates as a medium-power PNP switch with complementary NPN counterpart 2SD1816T-E. Its design emphasizes low saturation voltage and high gain-bandwidth (180 MHz), enabling efficient operation in hard-switched topologies up to several hundred kHz.
It features dual collector terminals (pins 2 and 4) sharing one emitter (pin 3) and base (pin 1), supporting parallel current paths or thermal distribution in compact layouts. The device is characterized across −55°C to +150°C operating range with guaranteed hFE ≥ 40 at IC = −3 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −100 V - supports switching in 48 V and 72 V bus systems with margin |
| IC | −4 A continuous - handles peak load currents in relay and solenoid drivers |
| VCE(sat) | −400 mV max at IC = −2 A / IB = −0.2 A - reduces conduction loss and self-heating |
| fT | 180 MHz - enables stable operation in high-frequency inverters and SMPS control stages |
| hFE | 40 min at IC = −3 A - ensures reliable drive capability under high-current saturation |
| ton/tf | 100 ns / 50 ns - supports switching frequencies >1 MHz in optimized gate-drive configurations |
| PC @ Tc=25°C | 20 W - allows high-power pulse operation with heatsink mounting |
Pinout & Package
DPAK / TP-FA package (Case 369AH), surface-mount, thermally enhanced with exposed drain pad (collector-connected). Dimensions: 7.0 × 6.2 × 2.3 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input; requires −0.2 A base drive for full saturation at −2 A collector current |
| 2 & 4 | Collector | Dual collector terminals - electrically common, improve current sharing and thermal spreading |
| 3 | Emitter | Power return path; tied to system ground or negative rail in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | −400 mV max ensures <0.8 W conduction loss at −2 A, reducing thermal stress in sealed enclosures |
| Dual-collector DPAK | Parallel collector terminals lower effective RthJC and support higher pulsed current without layout redesign |
| High fT (180 MHz) | Enables clean square-wave switching in 500 kHz–1 MHz DC-DC converters without phase lag or instability |
| hFE linearity | Stable current gain across IC = −0.5 A to −3 A improves predictability in analog-controlled linear regulators |
Applications
| Relay Drivers | DC-DC Converters |
|---|---|
Use Scenario: Driving electromagnetic relays in PLC I/O modules requiring robust turn-off and low dropout voltage. IC Role / Device Role / Timing Role: High-current PNP switch controlling relay coil current up to 3 A with fast turn-off (tf = 50 ns). Use Value: −400 mV VCE(sat) minimizes coil voltage drop, ensuring reliable relay closure even at low supply voltages. | Use Scenario: Output stage in non-isolated buck or inverting converters for industrial sensors and actuators. IC Role / Device Role / Timing Role: Main switching transistor in high-side configuration, operating at 200–500 kHz with controlled dI/dt. Use Value: 180 MHz fT and 100 ns ton support stable PWM operation without ringing or shoot-through risk. |
| Motor Control (BLDC) | Industrial Power Supplies |
Use Scenario: Low-side commutation switch in 24 V BLDC fan controllers with integrated hall-sensor feedback. IC Role / Device Role / Timing Role: Synchronized PNP switch in half-bridge leg, handling bidirectional current pulses up to 4 A. Use Value: Dual-collector DPAK structure lowers thermal resistance, sustaining 3 A continuous without forced air cooling. | Use Scenario: Standby power switch and auxiliary supply regulation in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: Primary switching element in offline flyback or forward converter auxiliary windings. Use Value: −100 V VCEO provides margin against reflected transients in 48 V input systems with ±20% tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD122T4G | VCEO = −100 V, IC = −8 A, but VCE(sat) = −750 mV @ IC = −4 A - higher conduction loss | Higher current rating suits larger relays; less suitable for thermally constrained 1 W designs | Choose when peak current >4 A required and board space allows TO-252 footprint |
| 2SB1182T-E | VCEO = −80 V, fT = 120 MHz, same DPAK package - lower voltage rating and bandwidth | Limited to ≤42 V systems; slower switching restricts use to <200 kHz topologies | Select only if legacy design reuse mandates identical pinout and lower cost is critical |
Compared with MJD122T4G and 2SB1182T-E, the 2SB1216T-E uniquely balances −100 V rating, −400 mV saturation, and 180 MHz bandwidth in DPAK - making it optimal for compact, high-efficiency 48 V industrial switching where thermal and timing margins are tight.
Availability
2SB1216T-E is available at Aetrix Electronics and suitable for relay drivers, DC-DC converters, and motor control applications requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.
Supply support for 2SB1216T-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2SB1216T-E belongs to onsemi's general-purpose bipolar transistor family designed specifically for high-reliability, medium-power switching in industrial controls and power conversion equipment.
FAQ
What is the maximum continuous collector current rating for the 2SB1216T-E?
The 2SB1216T-E has a maximum continuous collector current IC of −4 A at Tc = 25°C. Derating applies above this temperature; at Tc = 100°C, the usable IC drops to approximately −2.5 A per the thermal derating curve in the official datasheet. This rating is validated under PCB-mounted conditions with recommended copper pour.
Does the 2SB1216T-E have a built-in protection diode or ESD structure?
No, the 2SB1216T-E is a discrete PNP bipolar transistor without integrated protection diodes or ESD clamps. External flyback diodes must be added across inductive loads, and PCB-level ESD safeguards (e.g., series resistors, TVS) are required in handling and system-level design. This is consistent with all devices in the 2SB1216/2SD1816 family.
What is the pin configuration for the 2SB1216T-E in the DPAK package?
The 2SB1216T-E uses a 4-pin DPAK (TP-FA) package with pin 1 = Base, pins 2 and 4 = Collector (internally connected), and pin 3 = Emitter. This dual-collector layout is confirmed in the "ELECTRICAL CONNECTION" diagram on page 1 and "PACKAGE DIMENSIONS" on page 6 of the onsemi datasheet 2SB1216_2SD1816/D.
Is the 2SB1216T-E lead-free and halogen-free?
Yes, the 2SB1216T-E is Pb-free and RoHS-compliant. The "-E" suffix denotes lead-free packaging; halogen-free versions carry the "-H" suffix (e.g., 2SB1216T-H). Both variants meet JEDEC J-STD-020 moisture sensitivity level 1 and are qualified for reflow soldering per IPC/JEDEC J-STD-020.
How does the hFE ranking affect the 2SB1216T-E performance in production?
The 2SB1216T-E is offered in two hFE ranks: "S" (140–280) and "T" (200–400) at IC = −0.5 A. The "T" rank ensures higher minimum gain (200) for improved drive efficiency in low-base-current designs. Both ranks meet the guaranteed hFE ≥ 40 at IC = −3 A, preserving switching integrity across production lots.
2SB1216T-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 5V
- Power - Max:
- 1 W
- Frequency - Transition:
- 130MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TP
2SB1216T-E FAQ
1.How can I place an order for 2SB1216T-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SB1216T-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SB1216T-E reliable?
The price and inventory of 2SB1216T-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SB1216T-E is usually 5 days.
3.What payment methods are accepted for 2SB1216T-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SB1216T-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SB1216T-E?
2SB1216T-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SB1216T-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SB1216T-E?
For technical support, including 2SB1216T-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SB1216T-E requirements.
6.How does Aetrix verify that 2SB1216T-E is sourced from the original manufacturer or authorized distributors?
All 2SB1216T-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SB1216T-E meets industry standards.
7.What is the process for return or replacement of 2SB1216T-E?
All 2SB1216T-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SB1216T-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SB1216T-E part is unused and in its original packaging.
Return procedure for 2SB1216T-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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